SG83811A1 - Etching aluminium over refractory metal with successive plasmas - Google Patents
Etching aluminium over refractory metal with successive plasmasInfo
- Publication number
- SG83811A1 SG83811A1 SG200004522A SG200004522A SG83811A1 SG 83811 A1 SG83811 A1 SG 83811A1 SG 200004522 A SG200004522 A SG 200004522A SG 200004522 A SG200004522 A SG 200004522A SG 83811 A1 SG83811 A1 SG 83811A1
- Authority
- SG
- Singapore
- Prior art keywords
- refractory metal
- etching aluminium
- aluminium over
- over refractory
- plasmas
- Prior art date
Links
- 239000004411 aluminium Substances 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 210000002381 plasma Anatomy 0.000 title 1
- 239000003870 refractory metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/374,875 US6472329B1 (en) | 1999-08-16 | 1999-08-16 | Etching aluminum over refractory metal with successive plasmas |
Publications (1)
Publication Number | Publication Date |
---|---|
SG83811A1 true SG83811A1 (en) | 2001-10-16 |
Family
ID=23478542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200004522A SG83811A1 (en) | 1999-08-16 | 2000-08-16 | Etching aluminium over refractory metal with successive plasmas |
Country Status (6)
Country | Link |
---|---|
US (1) | US6472329B1 (ko) |
EP (1) | EP1077481A3 (ko) |
JP (1) | JP2001127050A (ko) |
KR (1) | KR100751126B1 (ko) |
SG (1) | SG83811A1 (ko) |
TW (1) | TW493232B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7084066B1 (en) * | 2000-07-03 | 2006-08-01 | Cypress Semiconductor Corporation | Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides |
JP2006210890A (ja) * | 2004-12-27 | 2006-08-10 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
GB0616265D0 (en) * | 2006-08-16 | 2006-09-27 | Ibm | Efficient synchronised updates to a data record in a data store |
KR101001875B1 (ko) * | 2006-09-30 | 2010-12-17 | 엘지이노텍 주식회사 | 등방성 에칭을 이용한 미세 패턴 형성방법 및 이를 이용하여 제조된 미세패턴이 형성된 반도체 기판 면상 부재 |
KR101229277B1 (ko) | 2006-10-12 | 2013-02-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 |
KR20080033589A (ko) * | 2006-10-12 | 2008-04-17 | 삼성전자주식회사 | 금속 배선의 제조 방법 및 표시 기판의 제조 방법 |
WO2018209599A1 (zh) * | 2017-05-17 | 2018-11-22 | 深圳市柔宇科技有限公司 | 阵列基板及其制造方法 |
TWI669994B (zh) * | 2017-12-04 | 2019-08-21 | 希華晶體科技股份有限公司 | Method for manufacturing miniaturized circuit and its products |
KR102446139B1 (ko) | 2017-12-06 | 2022-09-22 | 삼성디스플레이 주식회사 | 발광 다이오드 장치 및 이의 제조 방법 |
RU2721975C1 (ru) * | 2019-09-16 | 2020-05-25 | Федеральное государственное бюджетное учреждение науки Институт Ядерной Физики им. Г.И. Будкера Сибирского отделения (ИЯФ СО РАН) | Способ изготовления вкладыша пресс-формы или литьевой формы |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0622477A1 (en) * | 1993-02-24 | 1994-11-02 | Applied Materials, Inc. | Etching aluminum and its alloys using HC1, C1-containing etchant and N2 |
TW366577B (en) * | 1997-09-02 | 1999-08-11 | Vanguard Int Semiconduct Corp | Metalized manufacturing method for IC |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57201026A (en) | 1981-06-05 | 1982-12-09 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
DE3842758A1 (de) | 1988-12-19 | 1990-06-21 | Siemens Ag | Verfahren zum aetzen einer dreilagigen verdrahtungsebene bei der herstellung integrierter halbleiterschaltungen |
DE3940820C2 (de) | 1989-12-11 | 1998-07-09 | Leybold Ag | Verfahren zur Behandlung von Werkstücken durch reaktives Ionenätzen |
US5200031A (en) | 1991-08-26 | 1993-04-06 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps |
US5174856A (en) | 1991-08-26 | 1992-12-29 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch |
US5382316A (en) | 1993-10-29 | 1995-01-17 | Applied Materials, Inc. | Process for simultaneous removal of photoresist and polysilicon/polycide etch residues from an integrated circuit structure |
US5609775A (en) * | 1995-03-17 | 1997-03-11 | Chartered Semiconductor Manufacturing Pte Ltd. | Dry etch process for titanium-tungsten films |
US5846880A (en) * | 1995-04-28 | 1998-12-08 | Vanguard International Semiconductor Corporation | Process for removing titanium nitride layer in an integrated circuit |
US5780359A (en) | 1995-12-11 | 1998-07-14 | Applied Materials, Inc. | Polymer removal from top surfaces and sidewalls of a semiconductor wafer |
US5824234A (en) * | 1996-10-02 | 1998-10-20 | Mosel Vitelic, Inc. | Method for forming low contact resistance bonding pad |
US5883007A (en) * | 1996-12-20 | 1999-03-16 | Lam Research Corporation | Methods and apparatuses for improving photoresist selectivity and reducing etch rate loading |
US5869401A (en) * | 1996-12-20 | 1999-02-09 | Lam Research Corporation | Plasma-enhanced flash process |
JPH11176805A (ja) | 1997-11-14 | 1999-07-02 | Siemens Ag | 半導体装置の製造方法 |
JP2000150477A (ja) * | 1998-11-12 | 2000-05-30 | Nec Corp | ドライエッチング方法 |
-
1999
- 1999-08-16 US US09/374,875 patent/US6472329B1/en not_active Expired - Fee Related
-
2000
- 2000-08-16 EP EP00307010A patent/EP1077481A3/en not_active Withdrawn
- 2000-08-16 JP JP2000246960A patent/JP2001127050A/ja active Pending
- 2000-08-16 TW TW089116573A patent/TW493232B/zh not_active IP Right Cessation
- 2000-08-16 KR KR1020000047139A patent/KR100751126B1/ko not_active IP Right Cessation
- 2000-08-16 SG SG200004522A patent/SG83811A1/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0622477A1 (en) * | 1993-02-24 | 1994-11-02 | Applied Materials, Inc. | Etching aluminum and its alloys using HC1, C1-containing etchant and N2 |
TW366577B (en) * | 1997-09-02 | 1999-08-11 | Vanguard Int Semiconduct Corp | Metalized manufacturing method for IC |
Also Published As
Publication number | Publication date |
---|---|
KR100751126B1 (ko) | 2007-08-22 |
TW493232B (en) | 2002-07-01 |
JP2001127050A (ja) | 2001-05-11 |
EP1077481A2 (en) | 2001-02-21 |
EP1077481A3 (en) | 2002-01-09 |
US6472329B1 (en) | 2002-10-29 |
KR20010021311A (ko) | 2001-03-15 |
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