TW366577B - Metalized manufacturing method for IC - Google Patents
Metalized manufacturing method for ICInfo
- Publication number
- TW366577B TW366577B TW086112721A TW86112721A TW366577B TW 366577 B TW366577 B TW 366577B TW 086112721 A TW086112721 A TW 086112721A TW 86112721 A TW86112721 A TW 86112721A TW 366577 B TW366577 B TW 366577B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- dielectric layer
- forming
- pattern
- photoresist pattern
- Prior art date
Links
Abstract
The present invention relates to the manufacturing method of an IC metal lead and the metal lead structure by first forming an electric component on the silicon semiconductor wafer and then depositing the first dielectric layer with lithography and etching for forming contact on the first dielectric layer and then sputtering a layer of aluminum alloy and depositing the second dielectric layer before a photoresist coating and then forming photoresist pattern by means of lithography exposure technology and using said photoresist pattern as etching mask and in the dielectric etching reaction chamber and with plasma etching technology for etching the second dielectric layer for forming the second dielectric layer pattern and then removing the photoresist pattern. Then, using the "second dielectric layer pattern" as etching mask and in the metal etching reaction chamber using the plasma etching technology for etching the aluminum allow for forming aluminum leads, as a non-corrosive, low-resistance metal conductor lines.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086112721A TW366577B (en) | 1997-09-02 | 1997-09-02 | Metalized manufacturing method for IC |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086112721A TW366577B (en) | 1997-09-02 | 1997-09-02 | Metalized manufacturing method for IC |
Publications (1)
Publication Number | Publication Date |
---|---|
TW366577B true TW366577B (en) | 1999-08-11 |
Family
ID=57941153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086112721A TW366577B (en) | 1997-09-02 | 1997-09-02 | Metalized manufacturing method for IC |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW366577B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG83811A1 (en) * | 1999-08-16 | 2001-10-16 | Applied Komatsu Technology Inc | Etching aluminium over refractory metal with successive plasmas |
-
1997
- 1997-09-02 TW TW086112721A patent/TW366577B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG83811A1 (en) * | 1999-08-16 | 2001-10-16 | Applied Komatsu Technology Inc | Etching aluminium over refractory metal with successive plasmas |
US6472329B1 (en) | 1999-08-16 | 2002-10-29 | Applied Komatsu Technology, Inc. | Etching aluminum over refractory metal with successive plasmas |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |