TW366577B - Metalized manufacturing method for IC - Google Patents

Metalized manufacturing method for IC

Info

Publication number
TW366577B
TW366577B TW086112721A TW86112721A TW366577B TW 366577 B TW366577 B TW 366577B TW 086112721 A TW086112721 A TW 086112721A TW 86112721 A TW86112721 A TW 86112721A TW 366577 B TW366577 B TW 366577B
Authority
TW
Taiwan
Prior art keywords
etching
dielectric layer
forming
pattern
photoresist pattern
Prior art date
Application number
TW086112721A
Other languages
Chinese (zh)
Inventor
Horng-Huei Tseng
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW086112721A priority Critical patent/TW366577B/en
Application granted granted Critical
Publication of TW366577B publication Critical patent/TW366577B/en

Links

Abstract

The present invention relates to the manufacturing method of an IC metal lead and the metal lead structure by first forming an electric component on the silicon semiconductor wafer and then depositing the first dielectric layer with lithography and etching for forming contact on the first dielectric layer and then sputtering a layer of aluminum alloy and depositing the second dielectric layer before a photoresist coating and then forming photoresist pattern by means of lithography exposure technology and using said photoresist pattern as etching mask and in the dielectric etching reaction chamber and with plasma etching technology for etching the second dielectric layer for forming the second dielectric layer pattern and then removing the photoresist pattern. Then, using the "second dielectric layer pattern" as etching mask and in the metal etching reaction chamber using the plasma etching technology for etching the aluminum allow for forming aluminum leads, as a non-corrosive, low-resistance metal conductor lines.
TW086112721A 1997-09-02 1997-09-02 Metalized manufacturing method for IC TW366577B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086112721A TW366577B (en) 1997-09-02 1997-09-02 Metalized manufacturing method for IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086112721A TW366577B (en) 1997-09-02 1997-09-02 Metalized manufacturing method for IC

Publications (1)

Publication Number Publication Date
TW366577B true TW366577B (en) 1999-08-11

Family

ID=57941153

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112721A TW366577B (en) 1997-09-02 1997-09-02 Metalized manufacturing method for IC

Country Status (1)

Country Link
TW (1) TW366577B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG83811A1 (en) * 1999-08-16 2001-10-16 Applied Komatsu Technology Inc Etching aluminium over refractory metal with successive plasmas

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG83811A1 (en) * 1999-08-16 2001-10-16 Applied Komatsu Technology Inc Etching aluminium over refractory metal with successive plasmas
US6472329B1 (en) 1999-08-16 2002-10-29 Applied Komatsu Technology, Inc. Etching aluminum over refractory metal with successive plasmas

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees