SG79280A1 - A compound for aluminium film formation from chemical vapor deposition and a method of synthesis thereof - Google Patents

A compound for aluminium film formation from chemical vapor deposition and a method of synthesis thereof

Info

Publication number
SG79280A1
SG79280A1 SG9904472A SG1999004472A SG79280A1 SG 79280 A1 SG79280 A1 SG 79280A1 SG 9904472 A SG9904472 A SG 9904472A SG 1999004472 A SG1999004472 A SG 1999004472A SG 79280 A1 SG79280 A1 SG 79280A1
Authority
SG
Singapore
Prior art keywords
synthesis
compound
vapor deposition
film formation
chemical vapor
Prior art date
Application number
SG9904472A
Other languages
English (en)
Inventor
Shin Hyun-Koock
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Publication of SG79280A1 publication Critical patent/SG79280A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/065—Aluminium compounds with C-aluminium linkage compounds with an Al-H linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
SG9904472A 1998-09-15 1999-09-13 A compound for aluminium film formation from chemical vapor deposition and a method of synthesis thereof SG79280A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980038572A KR100289945B1 (ko) 1998-09-15 1998-09-15 알루미늄박막의화학증착용전구체화합물및이의제조방법

Publications (1)

Publication Number Publication Date
SG79280A1 true SG79280A1 (en) 2001-03-20

Family

ID=19551035

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9904472A SG79280A1 (en) 1998-09-15 1999-09-13 A compound for aluminium film formation from chemical vapor deposition and a method of synthesis thereof

Country Status (7)

Country Link
US (2) US6121443A (ja)
EP (1) EP0987270B1 (ja)
JP (1) JP2000086673A (ja)
KR (1) KR100289945B1 (ja)
DE (1) DE69904129T2 (ja)
SG (1) SG79280A1 (ja)
TW (1) TW486482B (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100316760B1 (ko) * 1999-06-11 2001-12-12 신현국 알루미나 박막의 화학 증착용 전구체 화합물 및 이의 제조방법
US7098339B2 (en) * 2005-01-18 2006-08-29 Praxair Technology, Inc. Processes for the production of organometallic compounds
JP4711113B2 (ja) * 2005-03-14 2011-06-29 株式会社トリケミカル研究所 ＣＨ３ＡｌＨ２：Ｌの製造方法、Ａｌ系膜形成材料、Ａｌ系膜形成方法、及びＡｌ系配線膜形成方法
KR100696858B1 (ko) 2005-09-21 2007-03-20 삼성전자주식회사 유기 알루미늄 전구체 및 이를 이용한 금속배선 형성방법
KR100689668B1 (ko) 2005-09-26 2007-03-08 삼성전자주식회사 유기 알루미늄 전구체 및 이를 이용한 알루미늄 배선형성방법
KR100724084B1 (ko) * 2005-11-16 2007-06-04 주식회사 유피케미칼 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법
KR100829472B1 (ko) * 2006-05-18 2008-05-16 (주)디엔에프 알루미늄 박막의 화학증착용 전구체 화합물 및 이의제조방법
KR100756403B1 (ko) * 2006-05-18 2007-09-10 (주)디엔에프 알루미늄 박막의 화학증착용 전구체 화합물의 제조방법
WO2009082031A1 (ja) 2007-12-26 2009-07-02 Jsr Corporation アルミニウム膜形成用組成物及びアルミニウム膜の形成方法
US8268722B2 (en) * 2009-06-03 2012-09-18 Novellus Systems, Inc. Interfacial capping layers for interconnects
US20110206844A1 (en) * 2010-02-24 2011-08-25 Jacob Grant Wiles Chromium-free passivation of vapor deposited aluminum surfaces
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
EP3728688B1 (en) * 2017-12-20 2021-11-10 Basf Se Process for the generation of metal-containing films
JP7401928B2 (ja) 2018-07-30 2023-12-20 ユーピー ケミカル カンパニー リミテッド アルミニウム化合物及びこれを使用したアルミニウム含有膜の形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB905985A (en) 1959-02-24 1962-09-19 Ethyl Corp Preparing metal-alumino hydrides
JPS57188026A (en) 1981-05-14 1982-11-18 Minolta Camera Co Ltd Driving device for photographing lens of automatic focusing camera
US4923717A (en) * 1989-03-17 1990-05-08 Regents Of The University Of Minnesota Process for the chemical vapor deposition of aluminum
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
US5113025A (en) 1989-10-02 1992-05-12 Ethyl Corporation Selective reducing agents
US5178911A (en) * 1989-11-30 1993-01-12 The President And Fellows Of Harvard College Process for chemical vapor deposition of main group metal nitrides
DE69120446T2 (de) * 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
US5130459A (en) * 1990-06-08 1992-07-14 Nec Corporation Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same
US5136046A (en) 1990-09-28 1992-08-04 Ethyl Corporation Preparation of amine alanes
US5191099A (en) * 1991-09-05 1993-03-02 Regents Of The University Of Minnesota Chemical vapor deposition of aluminum films using dimethylethylamine alane
JPH0912581A (ja) * 1995-04-28 1997-01-14 Sumitomo Chem Co Ltd ジメチルアルミニウムハイドライド組成物及びその製造方法ならびにジメチルアルミニウムハイドライドの粘度調製方法
US5900279A (en) 1995-11-20 1999-05-04 Tri Chemical Laboratory Inc. Processes for the chemical vapor deposition and solvent used for the processes
JP2913583B2 (ja) * 1996-09-24 1999-06-28 株式会社トリケミカル研究所 Ａｌ膜形成材料及びＡｌ膜形成方法

Also Published As

Publication number Publication date
JP2000086673A (ja) 2000-03-28
EP0987270A3 (en) 2001-06-06
EP0987270A2 (en) 2000-03-22
DE69904129D1 (de) 2003-01-09
US6121443A (en) 2000-09-19
DE69904129T2 (de) 2003-05-08
US6380383B1 (en) 2002-04-30
KR20000020137A (ko) 2000-04-15
EP0987270B1 (en) 2002-11-27
TW486482B (en) 2002-05-11
KR100289945B1 (ko) 2001-09-17

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