SG75777A1 - Electrostatic discharge protection circuit - Google Patents

Electrostatic discharge protection circuit

Info

Publication number
SG75777A1
SG75777A1 SG1996005014A SG1996005014A SG75777A1 SG 75777 A1 SG75777 A1 SG 75777A1 SG 1996005014 A SG1996005014 A SG 1996005014A SG 1996005014 A SG1996005014 A SG 1996005014A SG 75777 A1 SG75777 A1 SG 75777A1
Authority
SG
Singapore
Prior art keywords
protection circuit
electrostatic discharge
discharge protection
electrostatic
circuit
Prior art date
Application number
SG1996005014A
Other languages
English (en)
Inventor
Glen R Wagner
Jeffery Smith
Jose A Maiz
Clair C Webb
William M Holt
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of SG75777A1 publication Critical patent/SG75777A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG1996005014A 1993-10-15 1994-08-16 Electrostatic discharge protection circuit SG75777A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/138,472 US5430595A (en) 1993-10-15 1993-10-15 Electrostatic discharge protection circuit

Publications (1)

Publication Number Publication Date
SG75777A1 true SG75777A1 (en) 2000-10-24

Family

ID=22482165

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996005014A SG75777A1 (en) 1993-10-15 1994-08-16 Electrostatic discharge protection circuit

Country Status (11)

Country Link
US (1) US5430595A (zh)
EP (1) EP0723706B1 (zh)
JP (1) JPH09503887A (zh)
KR (1) KR100275252B1 (zh)
CN (1) CN1076874C (zh)
AU (1) AU7567194A (zh)
CA (1) CA2177150C (zh)
DE (1) DE69424795T2 (zh)
HK (1) HK1011460A1 (zh)
SG (1) SG75777A1 (zh)
WO (1) WO1995010855A1 (zh)

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US5528188A (en) * 1995-03-13 1996-06-18 International Business Machines Corporation Electrostatic discharge suppression circuit employing low-voltage triggering silicon-controlled rectifier
US5650355A (en) * 1995-03-30 1997-07-22 Texas Instruments Incorporated Process of making and process of trimming a fuse in a top level metal and in a step
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US5675469A (en) * 1995-07-12 1997-10-07 Motorola, Inc. Integrated circuit with electrostatic discharge (ESD) protection and ESD protection circuit
US5719733A (en) * 1995-11-13 1998-02-17 Lsi Logic Corporation ESD protection for deep submicron CMOS devices with minimum tradeoff for latchup behavior
KR0166509B1 (ko) * 1995-12-29 1999-01-15 김주용 정전기 보호 회로
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US5901065A (en) * 1996-02-07 1999-05-04 Motorola, Inc. Apparatus and method for automatically placing ties and connection elements within an integrated circuit
US5708377A (en) * 1996-02-23 1998-01-13 Wiltron Company Low power dual sampler utilizing step recovery diodes (SRDS)
US5728612A (en) * 1996-07-19 1998-03-17 Lsi Logic Corporation Method for forming minimum area structures for sub-micron CMOS ESD protection in integrated circuit structures without extra implant and mask steps, and articles formed thereby
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5740000A (en) * 1996-09-30 1998-04-14 Hewlett-Packard Co. ESD protection system for an integrated circuit with multiple power supply networks
US6008684A (en) * 1996-10-23 1999-12-28 Industrial Technology Research Institute CMOS output buffer with CMOS-controlled lateral SCR devices
TW307915B (en) * 1996-11-07 1997-06-11 Winbond Electronics Corp Electrostatic discharge protection circuit
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
US6034399A (en) * 1997-03-06 2000-03-07 Lockheed Martin Corporation Electrostatic discharge protection for silicon-on-insulator
JP3557510B2 (ja) * 1997-06-30 2004-08-25 沖電気工業株式会社 半導体装置
US6040968A (en) * 1997-06-30 2000-03-21 Texas Instruments Incorporated EOS/ESD protection for high density integrated circuits
US5969390A (en) * 1997-07-22 1999-10-19 Zilog, Inc. Layout solution for electromagnetic interference reduction
US6133597A (en) * 1997-07-25 2000-10-17 Mosel Vitelic Corporation Biasing an integrated circuit well with a transistor electrode
US6037636A (en) * 1998-05-19 2000-03-14 National Semiconductor Corporation Electrostatic discharge protection circuit and method
TW399337B (en) * 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device
US7327541B1 (en) 1998-06-19 2008-02-05 National Semiconductor Corporation Operation of dual-directional electrostatic discharge protection device
US6365924B1 (en) 1998-06-19 2002-04-02 National Semiconductor Corporation Dual direction over-voltage and over-current IC protection device and its cell structure
US6445039B1 (en) * 1998-11-12 2002-09-03 Broadcom Corporation System and method for ESD Protection
US8405152B2 (en) 1999-01-15 2013-03-26 Broadcom Corporation System and method for ESD protection
EP1145318B1 (en) * 1999-01-15 2015-12-30 Broadcom Corporation System and method for esd protection
US7687858B2 (en) * 1999-01-15 2010-03-30 Broadcom Corporation System and method for ESD protection
US6118640A (en) * 1999-02-17 2000-09-12 Pericom Semiconductor Corp. Actively-driven thin-oxide MOS transistor shunt for ESD protection of multiple independent supply busses in a mixed-signal chip
KR100518526B1 (ko) * 1999-02-25 2005-10-04 삼성전자주식회사 사이리스터의 트리거 전류를 이용한 정전하 방전회로
DE19944489A1 (de) * 1999-09-16 2001-04-19 Infineon Technologies Ag ESD-Schutzanordnung für Signaleingänge und -ausgänge bei Halbleitervorrichtungen mit Substrattrennung
US6512662B1 (en) * 1999-11-30 2003-01-28 Illinois Institute Of Technology Single structure all-direction ESD protection for integrated circuits
KR100338105B1 (ko) * 1999-12-28 2002-05-24 박종섭 반도체 소자용 정전기 방전구조
US6358781B1 (en) * 2000-06-30 2002-03-19 Taiwan Semiconductor Manufacturing Company Uniform current distribution SCR device for high voltage ESD protection
EP2393177B1 (en) 2001-03-16 2015-12-30 Sofics BVBA Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
US7589944B2 (en) * 2001-03-16 2009-09-15 Sofics Bvba Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
US6600204B2 (en) * 2001-07-11 2003-07-29 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
US6590261B2 (en) * 2001-10-10 2003-07-08 Macronix International Co., Ltd. Electrostatic discharge protection structure
US6770938B1 (en) 2002-01-16 2004-08-03 Advanced Micro Devices, Inc. Diode fabrication for ESD/EOS protection
US6894881B1 (en) * 2002-02-19 2005-05-17 National Semiconductor Corp ESD protection methods and devices using additional terminal in the diode structures
CN100401512C (zh) * 2002-03-26 2008-07-09 华邦电子股份有限公司 利用硅控整流器的静电放电保护电路
US6826025B2 (en) 2002-05-20 2004-11-30 International Business Machines Corporation Method and apparatus for providing ESD protection and/or noise reduction in an integrated circuit
AU2002950581A0 (en) * 2002-08-02 2002-09-12 Wayne Callen Electrical safety circuit
DE10255130B4 (de) * 2002-11-26 2007-03-22 Infineon Technologies Ag Schaltungsanordnung zum Schutz integrierter Schaltungen vor elektrostatischen Entladungen mit parallelem Strompfad
JP4176564B2 (ja) * 2003-06-23 2008-11-05 株式会社東芝 ウェハ移載装置及びこれを用いた半導体装置の製造方法
DE10349405A1 (de) 2003-10-21 2005-05-25 Austriamicrosystems Ag Aktive Schutzschaltungsanordnung
EP1560030A1 (en) * 2004-01-28 2005-08-03 Koninklijke Philips Electronics N.V. Method and apparatus for testing integrated circuits for susceptibility to latch-up
US7002218B2 (en) 2004-02-26 2006-02-21 Microchip Technology Incorporated Low capacitance ESD-protection structure under a bond pad
US6849902B1 (en) * 2004-03-11 2005-02-01 Winbond Electronics Corp. Input/output cell with robust electrostatic discharge protection
JP4978998B2 (ja) * 2004-03-12 2012-07-18 ローム株式会社 半導体装置
US20050225916A1 (en) * 2004-04-02 2005-10-13 Siemens Medical Solutions Usa, Inc. Ultrasound membrane transducer collapse protection system and method
US7649726B2 (en) * 2004-08-16 2010-01-19 National Instruments Corporation Protection circuit for general-purpose digital I/O lines
US7439592B2 (en) * 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications
US7505238B2 (en) * 2005-01-07 2009-03-17 Agnes Neves Woo ESD configuration for low parasitic capacitance I/O
US7042028B1 (en) * 2005-03-14 2006-05-09 System General Corp. Electrostatic discharge device
US7518844B1 (en) * 2006-02-10 2009-04-14 Integrated Device Technology, Inc. Over-voltage tolerant ESD protection circuit
TWI339886B (en) * 2006-09-14 2011-04-01 Novatek Microelectronics Corp Layout structure of electrostatic discharge protection circuit and production method thereof
CN101154657B (zh) * 2006-09-25 2010-04-07 联詠科技股份有限公司 静电放电防护电路的布局结构及其制造方法
CN101378191B (zh) * 2007-08-28 2010-12-15 比亚迪股份有限公司 静电放电保护电路及使用其的电子产品
US7701682B2 (en) * 2008-01-31 2010-04-20 Freescale Semiconductors, Inc. Electrostatic discharge protection
CN101847633B (zh) * 2010-05-05 2011-10-26 北京大学 一种静电保护器件及其制备方法
US8467162B2 (en) 2010-12-30 2013-06-18 United Microelectronics Corp. ESD protection circuit and ESD protection device thereof
DE102011018450B4 (de) * 2011-04-21 2017-08-31 Infineon Technologies Ag Halbleiterbauelement mit durchgeschalteten parasitären Thyristor bei einem Lichtangriff und Halbleiterbauelement mit Alarmschaltung für einen Lichtangriff
US8648386B2 (en) * 2011-08-31 2014-02-11 Macronix International Co., Ltd. Semiconductor structure and manufacturing method for the same and ESD circuit
WO2013095545A1 (en) * 2011-12-22 2013-06-27 Intel Corporation Distributed electrostatic discharge protection for an on-package input/output architecture
CN105870118B (zh) * 2011-12-22 2019-11-08 英特尔公司 用于封装体上输入/输出架构的分布式静电放电保护
CN104269401B (zh) * 2014-08-30 2017-03-29 电子科技大学 一种基于scr结构的新型esd保护器件
TWI661530B (zh) * 2018-02-13 2019-06-01 力晶積成電子製造股份有限公司 靜電放電保護元件
US11282831B2 (en) * 2019-09-18 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having multiple electrostatic discharge (ESD) paths
CN113540070B (zh) * 2020-04-20 2023-12-12 长鑫存储技术有限公司 静电保护电路
US20210408786A1 (en) * 2020-06-30 2021-12-30 Qualcomm Incorporated Circuit techniques for enhanced electrostatic discharge (esd) robustness
US11689014B2 (en) 2021-06-24 2023-06-27 Qualcomm Incorporated Electrostatic discharge circuit for multi-voltage rail thin-gate output driver

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US4922371A (en) * 1988-11-01 1990-05-01 Teledyne Semiconductor ESD protection circuit for MOS integrated circuits
WO1990014690A1 (en) * 1989-05-17 1990-11-29 David Sarnoff Research Center, Inc. Voltage stress alterable esd protection structure
US5274262A (en) * 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
DE69022726T2 (de) * 1989-05-17 1996-03-07 Sarnoff David Res Center Scr-schutzanordnung mit niedriger zündspannung und struktur.
US5225702A (en) * 1991-12-05 1993-07-06 Texas Instruments Incorporated Silicon controlled rectifier structure for electrostatic discharge protection
US5287241A (en) * 1992-02-04 1994-02-15 Cirrus Logic, Inc. Shunt circuit for electrostatic discharge protection

Also Published As

Publication number Publication date
CN1076874C (zh) 2001-12-26
DE69424795D1 (de) 2000-07-06
CA2177150C (en) 2003-10-28
EP0723706A1 (en) 1996-07-31
KR100275252B1 (ko) 2001-01-15
HK1011460A1 (en) 1999-07-09
US5430595A (en) 1995-07-04
AU7567194A (en) 1995-05-04
EP0723706B1 (en) 2000-05-31
CN1133105A (zh) 1996-10-09
KR960705369A (ko) 1996-10-09
WO1995010855A1 (en) 1995-04-20
DE69424795T2 (de) 2001-01-04
CA2177150A1 (en) 1995-04-20
JPH09503887A (ja) 1997-04-15
EP0723706A4 (en) 1997-01-08

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