CN101847633B - 一种静电保护器件及其制备方法 - Google Patents
一种静电保护器件及其制备方法 Download PDFInfo
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- CN101847633B CN101847633B CN2010101634167A CN201010163416A CN101847633B CN 101847633 B CN101847633 B CN 101847633B CN 2010101634167 A CN2010101634167 A CN 2010101634167A CN 201010163416 A CN201010163416 A CN 201010163416A CN 101847633 B CN101847633 B CN 101847633B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 230000001681 protective effect Effects 0.000 title abstract description 3
- 238000002347 injection Methods 0.000 claims abstract description 18
- 239000007924 injection Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 9
- 230000010354 integration Effects 0.000 abstract 1
- 238000002513 implantation Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (5)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101634167A CN101847633B (zh) | 2010-05-05 | 2010-05-05 | 一种静电保护器件及其制备方法 |
PCT/CN2011/072409 WO2011137701A1 (zh) | 2010-05-05 | 2011-04-02 | 一种静电保护器件及其制备方法 |
US13/201,370 US8476672B2 (en) | 2010-05-05 | 2011-04-02 | Electrostatic discharge protection device and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101634167A CN101847633B (zh) | 2010-05-05 | 2010-05-05 | 一种静电保护器件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101847633A CN101847633A (zh) | 2010-09-29 |
CN101847633B true CN101847633B (zh) | 2011-10-26 |
Family
ID=42772172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101634167A Active CN101847633B (zh) | 2010-05-05 | 2010-05-05 | 一种静电保护器件及其制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8476672B2 (zh) |
CN (1) | CN101847633B (zh) |
WO (1) | WO2011137701A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101847633B (zh) * | 2010-05-05 | 2011-10-26 | 北京大学 | 一种静电保护器件及其制备方法 |
JP5820311B2 (ja) * | 2012-03-02 | 2015-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN103035637B (zh) * | 2012-05-16 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | Rfldmos工艺中的esd器件及制造方法 |
CN110349950A (zh) * | 2019-06-19 | 2019-10-18 | 成都华微电子科技有限公司 | 低触发电压、高esd电路 |
CN111046623B (zh) * | 2019-11-05 | 2023-07-21 | 芯创智创新设计服务中心(宁波)有限公司 | 一种esd二极管的版图设计方法 |
CN113327846B (zh) * | 2020-07-14 | 2023-08-22 | 上海积塔半导体有限公司 | 包括高阻电阻和ggnmos esd的模拟电路及其制作方法 |
CN112466938B (zh) * | 2020-11-26 | 2023-11-14 | 中国科学院微电子研究所 | 一种应用于深亚微米级电路静电防护的可控硅器件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1133105A (zh) * | 1993-10-15 | 1996-10-09 | 英特尔公司 | 静电放电保护电路 |
JP2004281590A (ja) * | 2003-03-14 | 2004-10-07 | Rohm Co Ltd | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1348236B1 (en) * | 2000-11-06 | 2007-08-15 | Sarnoff Corporation | Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering |
US7427787B2 (en) * | 2005-07-08 | 2008-09-23 | Texas Instruments Incorporated | Guardringed SCR ESD protection |
KR100724335B1 (ko) * | 2005-08-10 | 2007-06-04 | 삼성전자주식회사 | 정전기 보호 회로용 실리콘 정류 제어기 및 그 구조체 |
CN101202280A (zh) * | 2006-12-11 | 2008-06-18 | 上海华虹Nec电子有限公司 | 一种scr静电保护器件及其制造方法 |
US7943438B2 (en) * | 2008-02-14 | 2011-05-17 | International Business Machines Corporation | Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology |
CN101847633B (zh) * | 2010-05-05 | 2011-10-26 | 北京大学 | 一种静电保护器件及其制备方法 |
-
2010
- 2010-05-05 CN CN2010101634167A patent/CN101847633B/zh active Active
-
2011
- 2011-04-02 WO PCT/CN2011/072409 patent/WO2011137701A1/zh active Application Filing
- 2011-04-02 US US13/201,370 patent/US8476672B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1133105A (zh) * | 1993-10-15 | 1996-10-09 | 英特尔公司 | 静电放电保护电路 |
JP2004281590A (ja) * | 2003-03-14 | 2004-10-07 | Rohm Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101847633A (zh) | 2010-09-29 |
WO2011137701A1 (zh) | 2011-11-10 |
US20120018775A1 (en) | 2012-01-26 |
US8476672B2 (en) | 2013-07-02 |
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Owner name: BEIJING UNIV. Effective date: 20130523 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20130523 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 100176 DAXING, BEIJING |
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Effective date of registration: 20130523 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |