SG72919A1 - Semiconductor device with decoupling capacitance and method thereof - Google Patents

Semiconductor device with decoupling capacitance and method thereof

Info

Publication number
SG72919A1
SG72919A1 SG1999000172A SG1999000172A SG72919A1 SG 72919 A1 SG72919 A1 SG 72919A1 SG 1999000172 A SG1999000172 A SG 1999000172A SG 1999000172 A SG1999000172 A SG 1999000172A SG 72919 A1 SG72919 A1 SG 72919A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
decoupling capacitance
decoupling
capacitance
semiconductor
Prior art date
Application number
SG1999000172A
Other languages
English (en)
Inventor
Edward Joseph Nowak
Minh Ho Tong
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG72919A1 publication Critical patent/SG72919A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG1999000172A 1998-01-30 1999-01-26 Semiconductor device with decoupling capacitance and method thereof SG72919A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/016,026 US6191451B1 (en) 1998-01-30 1998-01-30 Semiconductor device with decoupling capacitance

Publications (1)

Publication Number Publication Date
SG72919A1 true SG72919A1 (en) 2000-05-23

Family

ID=21774977

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1999000172A SG72919A1 (en) 1998-01-30 1999-01-26 Semiconductor device with decoupling capacitance and method thereof

Country Status (5)

Country Link
US (2) US6191451B1 (ja)
JP (1) JP3254431B2 (ja)
KR (1) KR100329895B1 (ja)
SG (1) SG72919A1 (ja)
TW (1) TW412835B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191451B1 (en) * 1998-01-30 2001-02-20 International Business Machines Corporation Semiconductor device with decoupling capacitance
KR100456526B1 (ko) * 2001-05-22 2004-11-09 삼성전자주식회사 식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법
US6649978B2 (en) * 2001-06-19 2003-11-18 Koninklijke Philips Electronics N.V. Semiconductor module having multiple semiconductor chips
US6630714B2 (en) * 2001-12-27 2003-10-07 Kabushiki Kaisha Toshiba Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
JP3631464B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 半導体装置
KR100437617B1 (ko) * 2002-05-03 2004-06-30 주식회사 하이닉스반도체 반도체 소자의 디커플링 캐피시터 형성방법
JP2004207271A (ja) * 2002-12-20 2004-07-22 Nec Electronics Corp Ｓｏｉ基板及び半導体集積回路装置
US7247534B2 (en) 2003-11-19 2007-07-24 International Business Machines Corporation Silicon device on Si:C-OI and SGOI and method of manufacture
TWI233688B (en) * 2004-08-30 2005-06-01 Ind Tech Res Inst Diode structure with low substrate leakage current and applications thereof
US7775791B2 (en) * 2008-02-25 2010-08-17 General Electric Company Method and apparatus for staged combustion of air and fuel
US9006827B2 (en) * 2011-11-09 2015-04-14 International Business Machines Corporation Radiation hardened memory cell and design structures
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754314A (en) * 1984-01-24 1988-06-28 Texas Instruments Incorporated Split-level CMOS
JPS62179143A (ja) 1986-01-31 1987-08-06 Fujitsu Ltd 半導体装置およびその製造方法
JP3019430B2 (ja) 1991-01-21 2000-03-13 ソニー株式会社 半導体集積回路装置
JP3141486B2 (ja) 1992-01-27 2001-03-05 ソニー株式会社 半導体装置
US5525533A (en) 1993-06-03 1996-06-11 United Technologies Corporation Method of making a low voltage coefficient capacitor
US5430318A (en) * 1993-06-14 1995-07-04 Sharp Microelectronics Technology, Inc. BiCMOS SOI structure having vertical BJT and method of fabricating same
JPH07254706A (ja) * 1993-11-29 1995-10-03 Texas Instr Inc <Ti> 高電圧デバイス構造およびその製造方法
US5489792A (en) * 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
US5489547A (en) * 1994-05-23 1996-02-06 Texas Instruments Incorporated Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient
US5399507A (en) * 1994-06-27 1995-03-21 Motorola, Inc. Fabrication of mixed thin-film and bulk semiconductor substrate for integrated circuit applications
JP2806286B2 (ja) * 1995-02-07 1998-09-30 日本電気株式会社 半導体装置
US5606188A (en) 1995-04-26 1997-02-25 International Business Machines Corporation Fabrication process and structure for a contacted-body silicon-on-insulator dynamic random access memory
US5525531A (en) 1995-06-05 1996-06-11 International Business Machines Corporation SOI DRAM with field-shield isolation
JPH0945912A (ja) * 1995-07-31 1997-02-14 Nec Corp 半導体装置およびその製造方法
JP3143592B2 (ja) * 1995-09-14 2001-03-07 キヤノン株式会社 表示装置
JPH09115999A (ja) * 1995-10-23 1997-05-02 Denso Corp 半導体集積回路装置
JP3376204B2 (ja) * 1996-02-15 2003-02-10 株式会社東芝 半導体装置
US6191451B1 (en) * 1998-01-30 2001-02-20 International Business Machines Corporation Semiconductor device with decoupling capacitance
US6020614A (en) * 1998-03-25 2000-02-01 Worley; Eugene Robert Method of reducing substrate noise coupling in mixed signal integrated circuits

Also Published As

Publication number Publication date
US6191451B1 (en) 2001-02-20
JPH11260909A (ja) 1999-09-24
KR19990068200A (ko) 1999-08-25
TW412835B (en) 2000-11-21
JP3254431B2 (ja) 2002-02-04
KR100329895B1 (ko) 2002-03-22
US6365484B1 (en) 2002-04-02

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