SG71892G - Method for resistor trimming by metal migration - Google Patents

Method for resistor trimming by metal migration

Info

Publication number
SG71892G
SG71892G SG718/92A SG71892A SG71892G SG 71892 G SG71892 G SG 71892G SG 718/92 A SG718/92 A SG 718/92A SG 71892 A SG71892 A SG 71892A SG 71892 G SG71892 G SG 71892G
Authority
SG
Singapore
Prior art keywords
metal migration
resistor trimming
trimming
resistor
migration
Prior art date
Application number
SG718/92A
Other languages
English (en)
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of SG71892G publication Critical patent/SG71892G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
    • H01C17/265—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing
    • H01C17/267—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing by passage of voltage pulses or electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
SG718/92A 1984-10-18 1992-07-13 Method for resistor trimming by metal migration SG71892G (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/662,109 US4606781A (en) 1984-10-18 1984-10-18 Method for resistor trimming by metal migration
PCT/US1985/001713 WO1986002492A1 (en) 1984-10-18 1985-09-09 Method for resistor trimming by metal migration

Publications (1)

Publication Number Publication Date
SG71892G true SG71892G (en) 1992-10-02

Family

ID=24656408

Family Applications (1)

Application Number Title Priority Date Filing Date
SG718/92A SG71892G (en) 1984-10-18 1992-07-13 Method for resistor trimming by metal migration

Country Status (7)

Country Link
US (1) US4606781A (ja)
EP (1) EP0197955B1 (ja)
JP (1) JPS62500623A (ja)
KR (1) KR910008715B1 (ja)
DE (1) DE3577779D1 (ja)
SG (1) SG71892G (ja)
WO (1) WO1986002492A1 (ja)

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JPS61154146A (ja) * 1984-12-27 1986-07-12 Toshiba Corp 半導体装置の製造方法
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
US4725791A (en) * 1986-09-18 1988-02-16 Motorola, Inc. Circuit utilizing resistors trimmed by metal migration
US4782202A (en) * 1986-12-29 1988-11-01 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for resistance adjustment of thick film thermal print heads
US4820657A (en) * 1987-02-06 1989-04-11 Georgia Tech Research Corporation Method for altering characteristics of junction semiconductor devices
US4948746A (en) * 1988-03-04 1990-08-14 Harris Corporation Isolated gate MESFET and method of making and trimming
US5010377A (en) * 1988-03-04 1991-04-23 Harris Corporation Isolated gate MESFET and method of trimming
US4945762A (en) * 1989-01-24 1990-08-07 Sensym, Inc. Silicon sensor with trimmable wheatstone bridge
JPH0410624A (ja) * 1990-04-27 1992-01-14 Hitachi Ltd 半導体集積回路
US5110758A (en) * 1991-06-03 1992-05-05 Motorola, Inc. Method of heat augmented resistor trimming
EP0563852A1 (en) * 1992-04-02 1993-10-06 Siemens Aktiengesellschaft Zag fuse for reduced blow-current applications
US5466484A (en) * 1993-09-29 1995-11-14 Motorola, Inc. Resistor structure and method of setting a resistance value
US6150917A (en) * 1995-02-27 2000-11-21 Motorola, Inc. Piezoresistive sensor bridge having overlapping diffused regions to accommodate mask misalignment and method
US5679275A (en) * 1995-07-03 1997-10-21 Motorola, Inc. Circuit and method of modifying characteristics of a utilization circuit
DE19530481C1 (de) * 1995-08-18 1997-03-27 Siemens Ag Integrierbare Komparatorschaltung mit einstellbarer Ansprechschwelle
FR2739491B1 (fr) 1995-09-28 1997-12-12 Sgs Thomson Microelectronics Procede de modification du dopage d'une couche de silicium
US20010048140A1 (en) * 1997-04-10 2001-12-06 Inao Toyoda Photo sensing integrated circuit device and related circuit adjustment
US6083836A (en) * 1997-12-23 2000-07-04 Texas Instruments Incorporated Transistors with substitutionally formed gate structures and method
WO2003023794A2 (en) * 2001-09-10 2003-03-20 Microbridge Technologies Inc. Method for trimming resistors
US8093652B2 (en) * 2002-08-28 2012-01-10 Ixys Corporation Breakdown voltage for power devices
US7106120B1 (en) 2003-07-22 2006-09-12 Sharp Laboratories Of America, Inc. PCMO resistor trimmer
US7239006B2 (en) * 2004-04-14 2007-07-03 International Business Machines Corporation Resistor tuning
US7084691B2 (en) * 2004-07-21 2006-08-01 Sharp Laboratories Of America, Inc. Mono-polarity switchable PCMO resistor trimmer
GB2419505A (en) * 2004-10-23 2006-04-26 2D Heat Ltd Adjusting the resistance of an electric heating element by DC pulsing a flame sprayed metal/metal oxide matrix
EP1722423B1 (en) * 2005-05-12 2016-07-06 Ixys Corporation Stable diodes for low and high frequency applications
JP4480649B2 (ja) * 2005-09-05 2010-06-16 富士通マイクロエレクトロニクス株式会社 ヒューズ素子及びその切断方法
US8441335B2 (en) * 2010-10-21 2013-05-14 Analog Devices, Inc. Method of trimming a thin film resistor, and an integrated circuit including trimmable thin film resistors
US8723637B2 (en) 2012-04-10 2014-05-13 Analog Devices, Inc. Method for altering electrical and thermal properties of resistive materials
US9963777B2 (en) 2012-10-08 2018-05-08 Analog Devices, Inc. Methods of forming a thin film resistor

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US3206340A (en) * 1960-06-22 1965-09-14 Westinghouse Electric Corp Process for treating semiconductors
US3333326A (en) * 1964-06-29 1967-08-01 Ibm Method of modifying electrical characteristic of semiconductor member
US3474530A (en) * 1967-02-03 1969-10-28 Ibm Mass production of electronic devices
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US3593069A (en) * 1969-10-08 1971-07-13 Nat Semiconductor Corp Integrated circuit resistor and method of making the same
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US3947866A (en) * 1973-06-25 1976-03-30 Signetics Corporation Ion implanted resistor having controlled temperature coefficient and method
US4191964A (en) * 1977-01-19 1980-03-04 Fairchild Camera & Instrument Corp. Headless resistor
DE2702207C2 (de) * 1977-01-20 1984-01-12 Robert Bosch Gmbh, 7000 Stuttgart Verfahren und Vorrichtung zum Abgleich elektronischer Schaltungen
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US4412241A (en) * 1980-11-21 1983-10-25 National Semiconductor Corporation Multiple trim structure
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GB2090465B (en) * 1980-12-29 1985-11-13 Gen Electric Production of p-n junctions by the electromigration method
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US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
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US4534100A (en) * 1982-06-28 1985-08-13 The United States Of America As Represented By The Secretary Of The Air Force Electrical method of making conductive paths in silicon

Also Published As

Publication number Publication date
KR880700470A (ko) 1988-03-15
EP0197955A1 (en) 1986-10-22
EP0197955A4 (en) 1987-01-10
JPH0543300B2 (ja) 1993-07-01
WO1986002492A1 (en) 1986-04-24
EP0197955B1 (en) 1990-05-16
US4606781A (en) 1986-08-19
KR910008715B1 (ko) 1991-10-19
DE3577779D1 (de) 1990-06-21
JPS62500623A (ja) 1987-03-12

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