DE3577779D1 - Verfahren zum trimmen eines widerstandes durch metallmigration. - Google Patents
Verfahren zum trimmen eines widerstandes durch metallmigration.Info
- Publication number
- DE3577779D1 DE3577779D1 DE8585904563T DE3577779T DE3577779D1 DE 3577779 D1 DE3577779 D1 DE 3577779D1 DE 8585904563 T DE8585904563 T DE 8585904563T DE 3577779 T DE3577779 T DE 3577779T DE 3577779 D1 DE3577779 D1 DE 3577779D1
- Authority
- DE
- Germany
- Prior art keywords
- trimming
- resistance
- metal migration
- migration
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title 1
- 238000013508 migration Methods 0.000 title 1
- 230000005012 migration Effects 0.000 title 1
- 238000009966 trimming Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
- H01C17/265—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing
- H01C17/267—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing by passage of voltage pulses or electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/662,109 US4606781A (en) | 1984-10-18 | 1984-10-18 | Method for resistor trimming by metal migration |
PCT/US1985/001713 WO1986002492A1 (en) | 1984-10-18 | 1985-09-09 | Method for resistor trimming by metal migration |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3577779D1 true DE3577779D1 (de) | 1990-06-21 |
Family
ID=24656408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585904563T Expired - Lifetime DE3577779D1 (de) | 1984-10-18 | 1985-09-09 | Verfahren zum trimmen eines widerstandes durch metallmigration. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4606781A (de) |
EP (1) | EP0197955B1 (de) |
JP (1) | JPS62500623A (de) |
KR (1) | KR910008715B1 (de) |
DE (1) | DE3577779D1 (de) |
SG (1) | SG71892G (de) |
WO (1) | WO1986002492A1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61154146A (ja) * | 1984-12-27 | 1986-07-12 | Toshiba Corp | 半導体装置の製造方法 |
US4713680A (en) * | 1986-06-30 | 1987-12-15 | Motorola, Inc. | Series resistive network |
US4725791A (en) * | 1986-09-18 | 1988-02-16 | Motorola, Inc. | Circuit utilizing resistors trimmed by metal migration |
US4782202A (en) * | 1986-12-29 | 1988-11-01 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for resistance adjustment of thick film thermal print heads |
US4820657A (en) * | 1987-02-06 | 1989-04-11 | Georgia Tech Research Corporation | Method for altering characteristics of junction semiconductor devices |
US4948746A (en) * | 1988-03-04 | 1990-08-14 | Harris Corporation | Isolated gate MESFET and method of making and trimming |
US5010377A (en) * | 1988-03-04 | 1991-04-23 | Harris Corporation | Isolated gate MESFET and method of trimming |
US4945762A (en) * | 1989-01-24 | 1990-08-07 | Sensym, Inc. | Silicon sensor with trimmable wheatstone bridge |
JPH0410624A (ja) * | 1990-04-27 | 1992-01-14 | Hitachi Ltd | 半導体集積回路 |
US5110758A (en) * | 1991-06-03 | 1992-05-05 | Motorola, Inc. | Method of heat augmented resistor trimming |
EP0563852A1 (de) * | 1992-04-02 | 1993-10-06 | Siemens Aktiengesellschaft | Zickzack-Schmelzvorrichtung für Anwendungen mit reduziertem Schmelzstrom |
US5466484A (en) * | 1993-09-29 | 1995-11-14 | Motorola, Inc. | Resistor structure and method of setting a resistance value |
US6150917A (en) * | 1995-02-27 | 2000-11-21 | Motorola, Inc. | Piezoresistive sensor bridge having overlapping diffused regions to accommodate mask misalignment and method |
US5679275A (en) * | 1995-07-03 | 1997-10-21 | Motorola, Inc. | Circuit and method of modifying characteristics of a utilization circuit |
DE19530481C1 (de) * | 1995-08-18 | 1997-03-27 | Siemens Ag | Integrierbare Komparatorschaltung mit einstellbarer Ansprechschwelle |
FR2739491B1 (fr) * | 1995-09-28 | 1997-12-12 | Sgs Thomson Microelectronics | Procede de modification du dopage d'une couche de silicium |
US20010048140A1 (en) * | 1997-04-10 | 2001-12-06 | Inao Toyoda | Photo sensing integrated circuit device and related circuit adjustment |
US6083836A (en) * | 1997-12-23 | 2000-07-04 | Texas Instruments Incorporated | Transistors with substitutionally formed gate structures and method |
AU2002325723A1 (en) * | 2001-09-10 | 2003-03-24 | Microbridge Technologies Inc. | Method for trimming resistors |
US8093652B2 (en) * | 2002-08-28 | 2012-01-10 | Ixys Corporation | Breakdown voltage for power devices |
US7106120B1 (en) | 2003-07-22 | 2006-09-12 | Sharp Laboratories Of America, Inc. | PCMO resistor trimmer |
US7239006B2 (en) * | 2004-04-14 | 2007-07-03 | International Business Machines Corporation | Resistor tuning |
US7084691B2 (en) * | 2004-07-21 | 2006-08-01 | Sharp Laboratories Of America, Inc. | Mono-polarity switchable PCMO resistor trimmer |
GB2419505A (en) * | 2004-10-23 | 2006-04-26 | 2D Heat Ltd | Adjusting the resistance of an electric heating element by DC pulsing a flame sprayed metal/metal oxide matrix |
EP1722423B1 (de) * | 2005-05-12 | 2016-07-06 | Ixys Corporation | Stabile Dioden für Niedrig- und Hochfrequenzanwendungen |
JP4480649B2 (ja) * | 2005-09-05 | 2010-06-16 | 富士通マイクロエレクトロニクス株式会社 | ヒューズ素子及びその切断方法 |
US8441335B2 (en) * | 2010-10-21 | 2013-05-14 | Analog Devices, Inc. | Method of trimming a thin film resistor, and an integrated circuit including trimmable thin film resistors |
US8723637B2 (en) | 2012-04-10 | 2014-05-13 | Analog Devices, Inc. | Method for altering electrical and thermal properties of resistive materials |
US9963777B2 (en) | 2012-10-08 | 2018-05-08 | Analog Devices, Inc. | Methods of forming a thin film resistor |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2916408A (en) * | 1956-03-29 | 1959-12-08 | Raytheon Co | Fabrication of junction transistors |
US3206340A (en) * | 1960-06-22 | 1965-09-14 | Westinghouse Electric Corp | Process for treating semiconductors |
US3333326A (en) * | 1964-06-29 | 1967-08-01 | Ibm | Method of modifying electrical characteristic of semiconductor member |
US3474530A (en) * | 1967-02-03 | 1969-10-28 | Ibm | Mass production of electronic devices |
US3548269A (en) * | 1968-12-03 | 1970-12-15 | Sprague Electric Co | Resistive layer semiconductive device |
US3576549A (en) * | 1969-04-14 | 1971-04-27 | Cogar Corp | Semiconductor device, method, and memory array |
US3593069A (en) * | 1969-10-08 | 1971-07-13 | Nat Semiconductor Corp | Integrated circuit resistor and method of making the same |
GB1311178A (en) * | 1970-09-19 | 1973-03-21 | Ferranti Ltd | Semiconductor devices |
US3629782A (en) * | 1970-10-06 | 1971-12-21 | Cogar Corp | Resistor with means for decreasing current density |
US3717852A (en) * | 1971-09-17 | 1973-02-20 | Ibm | Electronically rewritable read-only memory using via connections |
US3775838A (en) * | 1972-04-24 | 1973-12-04 | Olivetti & Co Spa | Integrated circuit package and construction technique |
US3769559A (en) * | 1972-06-21 | 1973-10-30 | Ibm | Non-volatile storage element |
DE2256688B2 (de) * | 1972-11-18 | 1976-05-06 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zum auftrennen von leiterbahnen auf integrierten schaltkreisen |
US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
US4191964A (en) * | 1977-01-19 | 1980-03-04 | Fairchild Camera & Instrument Corp. | Headless resistor |
DE2702207C2 (de) * | 1977-01-20 | 1984-01-12 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren und Vorrichtung zum Abgleich elektronischer Schaltungen |
FR2396413A1 (fr) * | 1977-06-29 | 1979-01-26 | Tokyo Shibaura Electric Co | Composant semi-conducteur a couche de resistance de conductibilite du type p |
US4411708A (en) * | 1980-08-25 | 1983-10-25 | Trw Inc. | Method of making precision doped polysilicon vertical ballast resistors by multiple implantations |
US4412241A (en) * | 1980-11-21 | 1983-10-25 | National Semiconductor Corporation | Multiple trim structure |
US4467312A (en) * | 1980-12-23 | 1984-08-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor resistor device |
GB2090465B (en) * | 1980-12-29 | 1985-11-13 | Gen Electric | Production of p-n junctions by the electromigration method |
US4446613A (en) * | 1981-10-19 | 1984-05-08 | Intel Corporation | Integrated circuit resistor and method of fabrication |
US4549912A (en) * | 1981-06-11 | 1985-10-29 | General Electric Company | Anode and cathode connections for the practice of electromigration |
US4381598A (en) * | 1981-06-11 | 1983-05-03 | General Electric Company | Method of making anode and cathode connections for electromigration |
US4534100A (en) * | 1982-06-28 | 1985-08-13 | The United States Of America As Represented By The Secretary Of The Air Force | Electrical method of making conductive paths in silicon |
-
1984
- 1984-10-18 US US06/662,109 patent/US4606781A/en not_active Expired - Lifetime
-
1985
- 1985-09-09 JP JP60503972A patent/JPS62500623A/ja active Granted
- 1985-09-09 WO PCT/US1985/001713 patent/WO1986002492A1/en active IP Right Grant
- 1985-09-09 KR KR1019860700367A patent/KR910008715B1/ko not_active IP Right Cessation
- 1985-09-09 EP EP85904563A patent/EP0197955B1/de not_active Expired - Lifetime
- 1985-09-09 DE DE8585904563T patent/DE3577779D1/de not_active Expired - Lifetime
-
1992
- 1992-07-13 SG SG718/92A patent/SG71892G/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP0197955A4 (de) | 1987-01-10 |
KR910008715B1 (ko) | 1991-10-19 |
WO1986002492A1 (en) | 1986-04-24 |
JPS62500623A (ja) | 1987-03-12 |
SG71892G (en) | 1992-10-02 |
JPH0543300B2 (de) | 1993-07-01 |
KR880700470A (ko) | 1988-03-15 |
EP0197955A1 (de) | 1986-10-22 |
EP0197955B1 (de) | 1990-05-16 |
US4606781A (en) | 1986-08-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. (N.D.GE |
|
8339 | Ceased/non-payment of the annual fee |