SG55025A1 - Low cost method of fabricating epitaxial semiconductor devices - Google Patents
Low cost method of fabricating epitaxial semiconductor devicesInfo
- Publication number
- SG55025A1 SG55025A1 SG1996002650A SG1996002650A SG55025A1 SG 55025 A1 SG55025 A1 SG 55025A1 SG 1996002650 A SG1996002650 A SG 1996002650A SG 1996002650 A SG1996002650 A SG 1996002650A SG 55025 A1 SG55025 A1 SG 55025A1
- Authority
- SG
- Singapore
- Prior art keywords
- low cost
- semiconductor devices
- epitaxial semiconductor
- cost method
- fabricating epitaxial
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/021,130 US5360509A (en) | 1993-03-08 | 1993-03-08 | Low cost method of fabricating epitaxial semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SG55025A1 true SG55025A1 (en) | 1998-12-21 |
Family
ID=21802507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996002650A SG55025A1 (en) | 1993-03-08 | 1994-03-08 | Low cost method of fabricating epitaxial semiconductor devices |
Country Status (4)
Country | Link |
---|---|
US (1) | US5360509A (de) |
EP (1) | EP0617456A3 (de) |
SG (1) | SG55025A1 (de) |
TW (1) | TW229324B (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3120825B2 (ja) * | 1994-11-14 | 2000-12-25 | 信越半導体株式会社 | エピタキシャルウエーハ及びその製造方法 |
US5635414A (en) * | 1995-03-28 | 1997-06-03 | Zakaluk; Gregory | Low cost method of fabricating shallow junction, Schottky semiconductor devices |
JP3534213B2 (ja) * | 1995-09-30 | 2004-06-07 | コマツ電子金属株式会社 | 半導体ウェハの製造方法 |
US5855735A (en) * | 1995-10-03 | 1999-01-05 | Kobe Precision, Inc. | Process for recovering substrates |
US5792709A (en) | 1995-12-19 | 1998-08-11 | Micron Technology, Inc. | High-speed planarizing apparatus and method for chemical mechanical planarization of semiconductor wafers |
JP2832184B2 (ja) * | 1996-08-08 | 1998-12-02 | 直江津電子工業株式会社 | シリコン半導体デスクリート用ウエハの製造方法 |
DE19704546A1 (de) * | 1997-02-06 | 1998-08-13 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer einseitig beschichteten und mit einem Finish versehenen Halbleiterscheibe |
JP3305610B2 (ja) * | 1997-02-21 | 2002-07-24 | 信越半導体株式会社 | ラッピング後の半導体ウエーハの洗浄方法 |
US6184109B1 (en) | 1997-07-23 | 2001-02-06 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
EP1019955A1 (de) * | 1997-08-21 | 2000-07-19 | MEMC Electronic Materials, Inc. | Verfahren zur verarbeitung von halbleiterwafern |
US6248651B1 (en) | 1998-06-24 | 2001-06-19 | General Semiconductor, Inc. | Low cost method of fabricating transient voltage suppressor semiconductor devices or the like |
US6214704B1 (en) * | 1998-12-16 | 2001-04-10 | Memc Electronic Materials, Inc. | Method of processing semiconductor wafers to build in back surface damage |
EP1022778A1 (de) * | 1999-01-22 | 2000-07-26 | Kabushiki Kaisha Toshiba | Vefahren zum Zerteilen eines Wafers und Verfahren zur Herstellung eines Halbleiterbauelements |
US6294469B1 (en) | 1999-05-21 | 2001-09-25 | Plasmasil, Llc | Silicon wafering process flow |
US6190453B1 (en) | 1999-07-14 | 2001-02-20 | Seh America, Inc. | Growth of epitaxial semiconductor material with improved crystallographic properties |
US6703290B2 (en) | 1999-07-14 | 2004-03-09 | Seh America, Inc. | Growth of epitaxial semiconductor material with improved crystallographic properties |
JP2001035817A (ja) | 1999-07-22 | 2001-02-09 | Toshiba Corp | ウェーハの分割方法及び半導体装置の製造方法 |
DE19960823B4 (de) * | 1999-12-16 | 2007-04-12 | Siltronic Ag | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung |
US6514423B1 (en) | 2000-02-22 | 2003-02-04 | Memc Electronic Materials, Inc. | Method for wafer processing |
DE10025871A1 (de) * | 2000-05-25 | 2001-12-06 | Wacker Siltronic Halbleitermat | Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung |
US20020127766A1 (en) * | 2000-12-27 | 2002-09-12 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
KR100618543B1 (ko) * | 2004-06-15 | 2006-08-31 | 삼성전자주식회사 | 웨이퍼 레벨 적층 패키지용 칩 스케일 패키지 제조 방법 |
DE102005046726B4 (de) * | 2005-09-29 | 2012-02-02 | Siltronic Ag | Nichtpolierte monokristalline Siliziumscheibe und Verfahren zu ihrer Herstellung |
DE102005058713B4 (de) * | 2005-12-08 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Reinigung des Volumens von Substraten, Substrat sowie Verwendung des Verfahrens |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1544182A1 (de) * | 1966-03-01 | 1970-02-26 | Itt Ind Gmbh Deutsche | Verfahren zum Herstellen von ebenen,mit epitaktisch gewachsenen Schichten versehenen,Halbleiterplatten |
US3436259A (en) * | 1966-05-12 | 1969-04-01 | Ibm | Method for plating and polishing a silicon planar surface |
US4144099A (en) * | 1977-10-31 | 1979-03-13 | International Business Machines Corporation | High performance silicon wafer and fabrication process |
JPS5935421A (ja) * | 1982-08-24 | 1984-02-27 | Toshiba Corp | 半導体装置の製造方法 |
JPS61166133A (ja) * | 1985-01-18 | 1986-07-26 | Hitachi Ltd | ウエハおよびその製造方法 |
US4711256A (en) * | 1985-04-19 | 1987-12-08 | Robert Kaiser | Method and apparatus for removal of small particles from a surface |
US5104828A (en) * | 1990-03-01 | 1992-04-14 | Intel Corporation | Method of planarizing a dielectric formed over a semiconductor substrate |
JPH0817163B2 (ja) * | 1990-04-12 | 1996-02-21 | 株式会社東芝 | エピタキシャルウェーハの製造方法 |
JPH0411728A (ja) * | 1990-04-30 | 1992-01-16 | Seiichiro Sogo | 半導体ウェハの洗浄装置 |
EP0460437B1 (de) * | 1990-05-18 | 1997-09-10 | Fujitsu Limited | Verfahren zur Herstellung eines Halbleitersubstrates und Verfahren zur Herstellung einer Halbleiteranordnung unter Verwendung dieses Substrates |
JPH0834198B2 (ja) * | 1990-11-28 | 1996-03-29 | 信越半導体株式会社 | Soi基板における単結晶薄膜層の膜厚制御方法 |
US5137597A (en) * | 1991-04-11 | 1992-08-11 | Microelectronics And Computer Technology Corporation | Fabrication of metal pillars in an electronic component using polishing |
US5201958A (en) * | 1991-11-12 | 1993-04-13 | Electronic Controls Design, Inc. | Closed-loop dual-cycle printed circuit board cleaning apparatus and method |
JP2602597B2 (ja) * | 1991-12-27 | 1997-04-23 | 信越半導体株式会社 | 薄膜soi基板の製造方法 |
-
1993
- 1993-03-08 US US08/021,130 patent/US5360509A/en not_active Expired - Fee Related
- 1993-04-17 TW TW082102955A patent/TW229324B/zh active
-
1994
- 1994-03-08 SG SG1996002650A patent/SG55025A1/en unknown
- 1994-03-08 EP EP94301627A patent/EP0617456A3/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
TW229324B (en) | 1994-09-01 |
EP0617456A2 (de) | 1994-09-28 |
EP0617456A3 (de) | 1995-12-27 |
US5360509A (en) | 1994-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG55025A1 (en) | Low cost method of fabricating epitaxial semiconductor devices | |
KR0171436B1 (en) | Forming method of semiconductor device | |
GB9326286D0 (en) | Semiconductor device manufacturing method | |
SG42823A1 (en) | Method of manufacturing semiconductor devices | |
GB2306779B (en) | Method of fabricating semiconductor device | |
EP0628992A3 (de) | Verfahren zur Herstellung von halbleitenden Wafern. | |
SG42870A1 (en) | Manufacturing method of semiconductor devices | |
EP0612103A3 (de) | Verfahren zur Herstellung von einem Silizium auf Isolator Halbleiterbauelement. | |
KR960012624B1 (en) | Fabricating method of semiconductor device | |
EP0631307A3 (de) | Halbleiteranordnung mit Grabenstruktur für Element Isolationszonen und Verfahren zur Herstellung. | |
GB9526276D0 (en) | Method of fabricating semiconductor devices | |
GB2252873B (en) | Method of fabricating semiconductor device | |
EP0660389A3 (de) | Verfahren zur Herstellung von Halbleiteranordnungen mit Isolationszonen | |
EP0667639A3 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung. | |
KR960013136B1 (en) | Fabricating method of semiconductor device | |
KR960016318B1 (en) | Method of manufacturing semiconductor device | |
GB2278234B (en) | Fabricating semiconductor devices | |
GB2284301B (en) | Pressure-connection type semiconductor device and method of fabricating the same | |
GB2313708B (en) | Method of fabricating semiconductor device | |
HK1011793A1 (en) | Method fo fabricating epitaxial semiconductor material | |
EP0709879A4 (de) | Halbleiterherstellungsverfahren | |
EP0547902A3 (en) | Epitaxial method for fabricating semiconductor devices and semiconductor devices fabricated by that method | |
GB9426147D0 (en) | Method for fabricating semi-conductor device | |
GB2318451B (en) | Method of fabricating semiconductor device | |
GB2289372B (en) | Method of manufacturing semiconductor device |