SG50605A1 - Article comprising alpha-hexathienyl - Google Patents
Article comprising alpha-hexathienylInfo
- Publication number
- SG50605A1 SG50605A1 SG1996006342A SG1996006342A SG50605A1 SG 50605 A1 SG50605 A1 SG 50605A1 SG 1996006342 A SG1996006342 A SG 1996006342A SG 1996006342 A SG1996006342 A SG 1996006342A SG 50605 A1 SG50605 A1 SG 50605A1
- Authority
- SG
- Singapore
- Prior art keywords
- hexathienyl
- alpha
- article
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/393,494 US5659181A (en) | 1995-03-02 | 1995-03-02 | Article comprising α-hexathienyl |
Publications (1)
Publication Number | Publication Date |
---|---|
SG50605A1 true SG50605A1 (en) | 1998-07-20 |
Family
ID=23554910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996006342A SG50605A1 (en) | 1995-03-02 | 1996-03-01 | Article comprising alpha-hexathienyl |
Country Status (8)
Country | Link |
---|---|
US (1) | US5659181A (fr) |
EP (1) | EP0730313B1 (fr) |
JP (1) | JP3168245B2 (fr) |
KR (1) | KR100397243B1 (fr) |
CA (1) | CA2166752C (fr) |
DE (1) | DE69637892D1 (fr) |
MX (1) | MX9600741A (fr) |
SG (1) | SG50605A1 (fr) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999053371A1 (fr) | 1998-04-10 | 1999-10-21 | E-Ink Corporation | Afficheurs electroniques utilisant des transistors a effet de champ a base organique |
JP4651193B2 (ja) | 1998-05-12 | 2011-03-16 | イー インク コーポレイション | ドローイングデバイス用途のためのマイクロカプセル化した電気泳動性の静電的にアドレスした媒体 |
US6215130B1 (en) * | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6312971B1 (en) | 1999-08-31 | 2001-11-06 | E Ink Corporation | Solvent annealing process for forming a thin semiconductor film with advantageous properties |
AU7091400A (en) | 1999-08-31 | 2001-03-26 | E-Ink Corporation | Transistor for an electronically driven display |
US6197663B1 (en) | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
US6414164B1 (en) * | 2000-07-12 | 2002-07-02 | International Business Machines Corporation | Synthesis of soluble derivatives of sexithiophene and their use as the semiconducting channels in thin-film filed-effect transistors |
DE10034873B4 (de) * | 2000-07-18 | 2005-10-13 | Pacifica Group Technologies Pty Ltd | Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug |
US7078261B2 (en) * | 2002-12-16 | 2006-07-18 | The Regents Of The University Of California | Increased mobility from organic semiconducting polymers field-effect transistors |
WO2005006449A1 (fr) * | 2003-07-10 | 2005-01-20 | Matsushita Electric Industrial Co., Ltd. | Transistor a film mince organique, son procede de fabrication, ecran a matrice active l'utilisant et marqueur radio d'identification |
CN100428521C (zh) | 2003-11-17 | 2008-10-22 | 富士施乐株式会社 | 有机半导体晶体管元件 |
JP4401826B2 (ja) * | 2004-03-10 | 2010-01-20 | キヤノン株式会社 | 電界効果型トランジスタおよびその製造方法 |
JP4401836B2 (ja) * | 2004-03-24 | 2010-01-20 | キヤノン株式会社 | 電界効果型トランジスタおよびその製造方法 |
US7695999B2 (en) * | 2005-09-06 | 2010-04-13 | Canon Kabushiki Kaisha | Production method of semiconductor device |
US7435989B2 (en) * | 2005-09-06 | 2008-10-14 | Canon Kabushiki Kaisha | Semiconductor device with layer containing polysiloxane compound |
JP5335228B2 (ja) * | 2006-12-27 | 2013-11-06 | キヤノン株式会社 | 新規化合物および有機半導体素子の製造方法 |
JP2010225758A (ja) * | 2009-03-23 | 2010-10-07 | Fuji Xerox Co Ltd | 有機半導体トランジスタ |
JP4893767B2 (ja) * | 2009-03-24 | 2012-03-07 | 富士ゼロックス株式会社 | 有機半導体トランジスタ |
JP5347690B2 (ja) * | 2009-04-30 | 2013-11-20 | 富士ゼロックス株式会社 | 有機電界発光素子、及び表示媒体 |
WO2010147939A1 (fr) | 2009-06-17 | 2010-12-23 | Hsio Technologies, Llc | Douille semi-conductrice |
US8955215B2 (en) | 2009-05-28 | 2015-02-17 | Hsio Technologies, Llc | High performance surface mount electrical interconnect |
US9276336B2 (en) | 2009-05-28 | 2016-03-01 | Hsio Technologies, Llc | Metalized pad to electrical contact interface |
WO2011139619A1 (fr) | 2010-04-26 | 2011-11-10 | Hsio Technologies, Llc | Adaptateur d'emballage de dispositif à semi-conducteur |
WO2014011232A1 (fr) | 2012-07-12 | 2014-01-16 | Hsio Technologies, Llc | Embase de semi-conducteur à métallisation sélective directe |
WO2010141318A1 (fr) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Prise de test de semi-conducteur à conducteur périphérique de circuit imprimé souple |
US9184527B2 (en) | 2009-06-02 | 2015-11-10 | Hsio Technologies, Llc | Electrical connector insulator housing |
US9136196B2 (en) | 2009-06-02 | 2015-09-15 | Hsio Technologies, Llc | Compliant printed circuit wafer level semiconductor package |
US8928344B2 (en) | 2009-06-02 | 2015-01-06 | Hsio Technologies, Llc | Compliant printed circuit socket diagnostic tool |
WO2012078493A1 (fr) | 2010-12-06 | 2012-06-14 | Hsio Technologies, Llc | Support d'interconnexion électrique de dispositif à circuit intégré |
WO2010141316A1 (fr) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Outil de diagnostic pour carte sonde à circuit imprimé adaptable |
US8525346B2 (en) | 2009-06-02 | 2013-09-03 | Hsio Technologies, Llc | Compliant conductive nano-particle electrical interconnect |
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US8970031B2 (en) | 2009-06-16 | 2015-03-03 | Hsio Technologies, Llc | Semiconductor die terminal |
US8610265B2 (en) | 2009-06-02 | 2013-12-17 | Hsio Technologies, Llc | Compliant core peripheral lead semiconductor test socket |
WO2014011226A1 (fr) | 2012-07-10 | 2014-01-16 | Hsio Technologies, Llc | Ensemble de circuits imprimés hybrides avec un cœur principal de faible densité et des régions de circuit de forte densité intégrées |
US9054097B2 (en) | 2009-06-02 | 2015-06-09 | Hsio Technologies, Llc | Compliant printed circuit area array semiconductor device package |
US9613841B2 (en) | 2009-06-02 | 2017-04-04 | Hsio Technologies, Llc | Area array semiconductor device package interconnect structure with optional package-to-package or flexible circuit to package connection |
US9093767B2 (en) | 2009-06-02 | 2015-07-28 | Hsio Technologies, Llc | High performance surface mount electrical interconnect |
US9232654B2 (en) | 2009-06-02 | 2016-01-05 | Hsio Technologies, Llc | High performance electrical circuit structure |
WO2010141303A1 (fr) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Ensemble d'interconnexion électrique conducteur élastique |
US8988093B2 (en) | 2009-06-02 | 2015-03-24 | Hsio Technologies, Llc | Bumped semiconductor wafer or die level electrical interconnect |
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US9196980B2 (en) | 2009-06-02 | 2015-11-24 | Hsio Technologies, Llc | High performance surface mount electrical interconnect with external biased normal force loading |
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US9318862B2 (en) | 2009-06-02 | 2016-04-19 | Hsio Technologies, Llc | Method of making an electronic interconnect |
WO2010141266A1 (fr) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Boîtier de semi-conducteur à sorties périphériques avec circuit imprimé adaptable |
WO2010141296A1 (fr) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Boîtier de semi-conducteur à circuit imprimé adaptable |
US9603249B2 (en) | 2009-06-02 | 2017-03-21 | Hsio Technologies, Llc | Direct metalization of electrical circuit structures |
US8803539B2 (en) | 2009-06-03 | 2014-08-12 | Hsio Technologies, Llc | Compliant wafer level probe assembly |
US8981568B2 (en) | 2009-06-16 | 2015-03-17 | Hsio Technologies, Llc | Simulated wirebond semiconductor package |
US8981809B2 (en) | 2009-06-29 | 2015-03-17 | Hsio Technologies, Llc | Compliant printed circuit semiconductor tester interface |
US8984748B2 (en) | 2009-06-29 | 2015-03-24 | Hsio Technologies, Llc | Singulated semiconductor device separable electrical interconnect |
US8758067B2 (en) | 2010-06-03 | 2014-06-24 | Hsio Technologies, Llc | Selective metalization of electrical connector or socket housing |
US10159154B2 (en) | 2010-06-03 | 2018-12-18 | Hsio Technologies, Llc | Fusion bonded liquid crystal polymer circuit structure |
US9350093B2 (en) | 2010-06-03 | 2016-05-24 | Hsio Technologies, Llc | Selective metalization of electrical connector or socket housing |
US9689897B2 (en) | 2010-06-03 | 2017-06-27 | Hsio Technologies, Llc | Performance enhanced semiconductor socket |
JP5966353B2 (ja) | 2011-12-26 | 2016-08-10 | 富士ゼロックス株式会社 | 有機半導体トランジスタ |
US9761520B2 (en) | 2012-07-10 | 2017-09-12 | Hsio Technologies, Llc | Method of making an electrical connector having electrodeposited terminals |
US10506722B2 (en) | 2013-07-11 | 2019-12-10 | Hsio Technologies, Llc | Fusion bonded liquid crystal polymer electrical circuit structure |
US10667410B2 (en) | 2013-07-11 | 2020-05-26 | Hsio Technologies, Llc | Method of making a fusion bonded circuit structure |
US9755335B2 (en) | 2015-03-18 | 2017-09-05 | Hsio Technologies, Llc | Low profile electrical interconnect with fusion bonded contact retention and solder wick reduction |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
US5315129A (en) * | 1990-08-20 | 1994-05-24 | University Of Southern California | Organic optoelectronic devices and methods |
JP3224829B2 (ja) * | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
-
1995
- 1995-03-02 US US08/393,494 patent/US5659181A/en not_active Expired - Lifetime
-
1996
- 1996-01-08 CA CA002166752A patent/CA2166752C/fr not_active Expired - Fee Related
- 1996-02-21 DE DE69637892T patent/DE69637892D1/de not_active Expired - Lifetime
- 1996-02-21 EP EP96301149A patent/EP0730313B1/fr not_active Expired - Lifetime
- 1996-02-26 MX MX9600741A patent/MX9600741A/es not_active IP Right Cessation
- 1996-02-27 JP JP03919096A patent/JP3168245B2/ja not_active Expired - Fee Related
- 1996-03-01 SG SG1996006342A patent/SG50605A1/en unknown
- 1996-03-02 KR KR1019960005463A patent/KR100397243B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH08264805A (ja) | 1996-10-11 |
MX9600741A (es) | 1997-02-28 |
CA2166752C (fr) | 2000-06-27 |
KR960036146A (ko) | 1996-10-28 |
KR100397243B1 (ko) | 2004-03-04 |
CA2166752A1 (fr) | 1996-09-03 |
EP0730313B1 (fr) | 2009-04-08 |
DE69637892D1 (de) | 2009-05-20 |
EP0730313A3 (fr) | 1998-03-18 |
JP3168245B2 (ja) | 2001-05-21 |
EP0730313A2 (fr) | 1996-09-04 |
US5659181A (en) | 1997-08-19 |
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