SG50605A1 - Article comprising alpha-hexathienyl - Google Patents

Article comprising alpha-hexathienyl

Info

Publication number
SG50605A1
SG50605A1 SG1996006342A SG1996006342A SG50605A1 SG 50605 A1 SG50605 A1 SG 50605A1 SG 1996006342 A SG1996006342 A SG 1996006342A SG 1996006342 A SG1996006342 A SG 1996006342A SG 50605 A1 SG50605 A1 SG 50605A1
Authority
SG
Singapore
Prior art keywords
hexathienyl
alpha
article
Prior art date
Application number
SG1996006342A
Other languages
English (en)
Inventor
Paul Michael Bridenbaugh
Robert Alfred Laudise
Robert Cort Haddon
Robert Mclemore Fleming
Theo Siegrist
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of SG50605A1 publication Critical patent/SG50605A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/655Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG1996006342A 1995-03-02 1996-03-01 Article comprising alpha-hexathienyl SG50605A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/393,494 US5659181A (en) 1995-03-02 1995-03-02 Article comprising α-hexathienyl

Publications (1)

Publication Number Publication Date
SG50605A1 true SG50605A1 (en) 1998-07-20

Family

ID=23554910

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996006342A SG50605A1 (en) 1995-03-02 1996-03-01 Article comprising alpha-hexathienyl

Country Status (8)

Country Link
US (1) US5659181A (fr)
EP (1) EP0730313B1 (fr)
JP (1) JP3168245B2 (fr)
KR (1) KR100397243B1 (fr)
CA (1) CA2166752C (fr)
DE (1) DE69637892D1 (fr)
MX (1) MX9600741A (fr)
SG (1) SG50605A1 (fr)

Families Citing this family (64)

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Publication number Priority date Publication date Assignee Title
WO1999053371A1 (fr) 1998-04-10 1999-10-21 E-Ink Corporation Afficheurs electroniques utilisant des transistors a effet de champ a base organique
JP4651193B2 (ja) 1998-05-12 2011-03-16 イー インク コーポレイション ドローイングデバイス用途のためのマイクロカプセル化した電気泳動性の静電的にアドレスした媒体
US6215130B1 (en) * 1998-08-20 2001-04-10 Lucent Technologies Inc. Thin film transistors
US6498114B1 (en) 1999-04-09 2002-12-24 E Ink Corporation Method for forming a patterned semiconductor film
US6312971B1 (en) 1999-08-31 2001-11-06 E Ink Corporation Solvent annealing process for forming a thin semiconductor film with advantageous properties
AU7091400A (en) 1999-08-31 2001-03-26 E-Ink Corporation Transistor for an electronically driven display
US6197663B1 (en) 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
US6414164B1 (en) * 2000-07-12 2002-07-02 International Business Machines Corporation Synthesis of soluble derivatives of sexithiophene and their use as the semiconducting channels in thin-film filed-effect transistors
DE10034873B4 (de) * 2000-07-18 2005-10-13 Pacifica Group Technologies Pty Ltd Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug
US7078261B2 (en) * 2002-12-16 2006-07-18 The Regents Of The University Of California Increased mobility from organic semiconducting polymers field-effect transistors
WO2005006449A1 (fr) * 2003-07-10 2005-01-20 Matsushita Electric Industrial Co., Ltd. Transistor a film mince organique, son procede de fabrication, ecran a matrice active l'utilisant et marqueur radio d'identification
CN100428521C (zh) 2003-11-17 2008-10-22 富士施乐株式会社 有机半导体晶体管元件
JP4401826B2 (ja) * 2004-03-10 2010-01-20 キヤノン株式会社 電界効果型トランジスタおよびその製造方法
JP4401836B2 (ja) * 2004-03-24 2010-01-20 キヤノン株式会社 電界効果型トランジスタおよびその製造方法
US7695999B2 (en) * 2005-09-06 2010-04-13 Canon Kabushiki Kaisha Production method of semiconductor device
US7435989B2 (en) * 2005-09-06 2008-10-14 Canon Kabushiki Kaisha Semiconductor device with layer containing polysiloxane compound
JP5335228B2 (ja) * 2006-12-27 2013-11-06 キヤノン株式会社 新規化合物および有機半導体素子の製造方法
JP2010225758A (ja) * 2009-03-23 2010-10-07 Fuji Xerox Co Ltd 有機半導体トランジスタ
JP4893767B2 (ja) * 2009-03-24 2012-03-07 富士ゼロックス株式会社 有機半導体トランジスタ
JP5347690B2 (ja) * 2009-04-30 2013-11-20 富士ゼロックス株式会社 有機電界発光素子、及び表示媒体
WO2010147939A1 (fr) 2009-06-17 2010-12-23 Hsio Technologies, Llc Douille semi-conductrice
US8955215B2 (en) 2009-05-28 2015-02-17 Hsio Technologies, Llc High performance surface mount electrical interconnect
US9276336B2 (en) 2009-05-28 2016-03-01 Hsio Technologies, Llc Metalized pad to electrical contact interface
WO2011139619A1 (fr) 2010-04-26 2011-11-10 Hsio Technologies, Llc Adaptateur d'emballage de dispositif à semi-conducteur
WO2014011232A1 (fr) 2012-07-12 2014-01-16 Hsio Technologies, Llc Embase de semi-conducteur à métallisation sélective directe
WO2010141318A1 (fr) 2009-06-02 2010-12-09 Hsio Technologies, Llc Prise de test de semi-conducteur à conducteur périphérique de circuit imprimé souple
US9184527B2 (en) 2009-06-02 2015-11-10 Hsio Technologies, Llc Electrical connector insulator housing
US9136196B2 (en) 2009-06-02 2015-09-15 Hsio Technologies, Llc Compliant printed circuit wafer level semiconductor package
US8928344B2 (en) 2009-06-02 2015-01-06 Hsio Technologies, Llc Compliant printed circuit socket diagnostic tool
WO2012078493A1 (fr) 2010-12-06 2012-06-14 Hsio Technologies, Llc Support d'interconnexion électrique de dispositif à circuit intégré
WO2010141316A1 (fr) 2009-06-02 2010-12-09 Hsio Technologies, Llc Outil de diagnostic pour carte sonde à circuit imprimé adaptable
US8525346B2 (en) 2009-06-02 2013-09-03 Hsio Technologies, Llc Compliant conductive nano-particle electrical interconnect
US9276339B2 (en) 2009-06-02 2016-03-01 Hsio Technologies, Llc Electrical interconnect IC device socket
US8970031B2 (en) 2009-06-16 2015-03-03 Hsio Technologies, Llc Semiconductor die terminal
US8610265B2 (en) 2009-06-02 2013-12-17 Hsio Technologies, Llc Compliant core peripheral lead semiconductor test socket
WO2014011226A1 (fr) 2012-07-10 2014-01-16 Hsio Technologies, Llc Ensemble de circuits imprimés hybrides avec un cœur principal de faible densité et des régions de circuit de forte densité intégrées
US9054097B2 (en) 2009-06-02 2015-06-09 Hsio Technologies, Llc Compliant printed circuit area array semiconductor device package
US9613841B2 (en) 2009-06-02 2017-04-04 Hsio Technologies, Llc Area array semiconductor device package interconnect structure with optional package-to-package or flexible circuit to package connection
US9093767B2 (en) 2009-06-02 2015-07-28 Hsio Technologies, Llc High performance surface mount electrical interconnect
US9232654B2 (en) 2009-06-02 2016-01-05 Hsio Technologies, Llc High performance electrical circuit structure
WO2010141303A1 (fr) 2009-06-02 2010-12-09 Hsio Technologies, Llc Ensemble d'interconnexion électrique conducteur élastique
US8988093B2 (en) 2009-06-02 2015-03-24 Hsio Technologies, Llc Bumped semiconductor wafer or die level electrical interconnect
US9277654B2 (en) 2009-06-02 2016-03-01 Hsio Technologies, Llc Composite polymer-metal electrical contacts
US9196980B2 (en) 2009-06-02 2015-11-24 Hsio Technologies, Llc High performance surface mount electrical interconnect with external biased normal force loading
US8987886B2 (en) 2009-06-02 2015-03-24 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
US9414500B2 (en) 2009-06-02 2016-08-09 Hsio Technologies, Llc Compliant printed flexible circuit
US9930775B2 (en) 2009-06-02 2018-03-27 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
US9318862B2 (en) 2009-06-02 2016-04-19 Hsio Technologies, Llc Method of making an electronic interconnect
WO2010141266A1 (fr) 2009-06-02 2010-12-09 Hsio Technologies, Llc Boîtier de semi-conducteur à sorties périphériques avec circuit imprimé adaptable
WO2010141296A1 (fr) 2009-06-02 2010-12-09 Hsio Technologies, Llc Boîtier de semi-conducteur à circuit imprimé adaptable
US9603249B2 (en) 2009-06-02 2017-03-21 Hsio Technologies, Llc Direct metalization of electrical circuit structures
US8803539B2 (en) 2009-06-03 2014-08-12 Hsio Technologies, Llc Compliant wafer level probe assembly
US8981568B2 (en) 2009-06-16 2015-03-17 Hsio Technologies, Llc Simulated wirebond semiconductor package
US8981809B2 (en) 2009-06-29 2015-03-17 Hsio Technologies, Llc Compliant printed circuit semiconductor tester interface
US8984748B2 (en) 2009-06-29 2015-03-24 Hsio Technologies, Llc Singulated semiconductor device separable electrical interconnect
US8758067B2 (en) 2010-06-03 2014-06-24 Hsio Technologies, Llc Selective metalization of electrical connector or socket housing
US10159154B2 (en) 2010-06-03 2018-12-18 Hsio Technologies, Llc Fusion bonded liquid crystal polymer circuit structure
US9350093B2 (en) 2010-06-03 2016-05-24 Hsio Technologies, Llc Selective metalization of electrical connector or socket housing
US9689897B2 (en) 2010-06-03 2017-06-27 Hsio Technologies, Llc Performance enhanced semiconductor socket
JP5966353B2 (ja) 2011-12-26 2016-08-10 富士ゼロックス株式会社 有機半導体トランジスタ
US9761520B2 (en) 2012-07-10 2017-09-12 Hsio Technologies, Llc Method of making an electrical connector having electrodeposited terminals
US10506722B2 (en) 2013-07-11 2019-12-10 Hsio Technologies, Llc Fusion bonded liquid crystal polymer electrical circuit structure
US10667410B2 (en) 2013-07-11 2020-05-26 Hsio Technologies, Llc Method of making a fusion bonded circuit structure
US9755335B2 (en) 2015-03-18 2017-09-05 Hsio Technologies, Llc Low profile electrical interconnect with fusion bonded contact retention and solder wick reduction

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
FR2664430B1 (fr) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5315129A (en) * 1990-08-20 1994-05-24 University Of Southern California Organic optoelectronic devices and methods
JP3224829B2 (ja) * 1991-08-15 2001-11-05 株式会社東芝 有機電界効果型素子

Also Published As

Publication number Publication date
JPH08264805A (ja) 1996-10-11
MX9600741A (es) 1997-02-28
CA2166752C (fr) 2000-06-27
KR960036146A (ko) 1996-10-28
KR100397243B1 (ko) 2004-03-04
CA2166752A1 (fr) 1996-09-03
EP0730313B1 (fr) 2009-04-08
DE69637892D1 (de) 2009-05-20
EP0730313A3 (fr) 1998-03-18
JP3168245B2 (ja) 2001-05-21
EP0730313A2 (fr) 1996-09-04
US5659181A (en) 1997-08-19

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