SG42852A1 - Magnetoresistive sensor based on oscillations in the magnetoresistive - Google Patents

Magnetoresistive sensor based on oscillations in the magnetoresistive

Info

Publication number
SG42852A1
SG42852A1 SG1996000144A SG1996000144A SG42852A1 SG 42852 A1 SG42852 A1 SG 42852A1 SG 1996000144 A SG1996000144 A SG 1996000144A SG 1996000144 A SG1996000144 A SG 1996000144A SG 42852 A1 SG42852 A1 SG 42852A1
Authority
SG
Singapore
Prior art keywords
magnetoresistive
oscillations
sensor based
magnetoresistive sensor
sensor
Prior art date
Application number
SG1996000144A
Other languages
English (en)
Inventor
Stuart Stephen Papworth-Parkin
Kevin Patrick Roche
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG42852A1 publication Critical patent/SG42852A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Magnetic Heads (AREA)
SG1996000144A 1991-02-08 1992-02-05 Magnetoresistive sensor based on oscillations in the magnetoresistive SG42852A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65356791A 1991-02-08 1991-02-08

Publications (1)

Publication Number Publication Date
SG42852A1 true SG42852A1 (en) 1997-10-17

Family

ID=24621406

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996000144A SG42852A1 (en) 1991-02-08 1992-02-05 Magnetoresistive sensor based on oscillations in the magnetoresistive

Country Status (10)

Country Link
US (1) US5341118A (zh)
EP (1) EP0498640A3 (zh)
JP (1) JP2612988B2 (zh)
KR (1) KR960001289B1 (zh)
CN (1) CN1044044C (zh)
BR (1) BR9200322A (zh)
CA (1) CA2060561C (zh)
MY (1) MY108176A (zh)
SG (1) SG42852A1 (zh)
TW (1) TW211077B (zh)

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US5627704A (en) * 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure
US6590750B2 (en) 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
US5747997A (en) * 1996-06-05 1998-05-05 Regents Of The University Of Minnesota Spin-valve magnetoresistance sensor having minimal hysteresis problems
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
US5666248A (en) * 1996-09-13 1997-09-09 International Business Machines Corporation Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields
US5731936A (en) * 1996-09-26 1998-03-24 International Business Machines Corporation Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability
US5936400A (en) * 1996-12-23 1999-08-10 Federal Products Co. Magnetoresistive displacement sensor and variable resistor using a moving domain wall
US5976681A (en) * 1997-06-30 1999-11-02 Ford Global Technologies, Inc. Giant magnetoresistors with high sensitivity and reduced hysteresis
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
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US6153320A (en) * 1999-05-05 2000-11-28 International Business Machines Corporation Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
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US6669983B2 (en) 2001-10-25 2003-12-30 Tdk Corporation Manufacturing method of thin-film magnetic head with magnetoresistive effect element
JP2003324225A (ja) * 2002-04-26 2003-11-14 Nec Corp 積層フェリ型磁性薄膜並びにそれを使用した磁気抵抗効果素子及び強磁性トンネル素子
US6775183B2 (en) * 2002-10-22 2004-08-10 Btg International Ltd. Magnetic memory device employing giant magnetoresistance effect
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JP3695459B2 (ja) * 2003-10-30 2005-09-14 Ｔｄｋ株式会社 薄膜磁気ヘッドの製造方法
US7190560B2 (en) 2004-02-18 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Self-pinned CPP sensor using Fe/Cr/Fe structure
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US8068315B2 (en) * 2007-09-26 2011-11-29 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers
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Also Published As

Publication number Publication date
BR9200322A (pt) 1992-10-13
KR960001289B1 (ko) 1996-01-25
JPH04360009A (ja) 1992-12-14
MY108176A (en) 1996-08-30
CN1063960A (zh) 1992-08-26
KR920017027A (ko) 1992-09-26
US5341118A (en) 1994-08-23
TW211077B (zh) 1993-08-11
CA2060561C (en) 1998-05-05
EP0498640A3 (en) 1993-10-13
CN1044044C (zh) 1999-07-07
JP2612988B2 (ja) 1997-05-21
EP0498640A2 (en) 1992-08-12
CA2060561A1 (en) 1992-08-09

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