SG177902A1 - Non-contact process kit - Google Patents
Non-contact process kit Download PDFInfo
- Publication number
- SG177902A1 SG177902A1 SG2011094000A SG2011094000A SG177902A1 SG 177902 A1 SG177902 A1 SG 177902A1 SG 2011094000 A SG2011094000 A SG 2011094000A SG 2011094000 A SG2011094000 A SG 2011094000A SG 177902 A1 SG177902 A1 SG 177902A1
- Authority
- SG
- Singapore
- Prior art keywords
- ring
- process kit
- wall
- deposition
- extending
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 81
- 230000008569 process Effects 0.000 title claims abstract description 81
- 230000008021 deposition Effects 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 59
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 45
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 61
- 238000005240 physical vapour deposition Methods 0.000 abstract description 20
- 239000000463 material Substances 0.000 description 19
- 239000002245 particle Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013529 heat transfer fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87075206P | 2006-12-19 | 2006-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG177902A1 true SG177902A1 (en) | 2012-02-28 |
Family
ID=39563165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011094000A SG177902A1 (en) | 2006-12-19 | 2007-12-13 | Non-contact process kit |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5666133B2 (OSRAM) |
| KR (1) | KR101504085B1 (OSRAM) |
| CN (1) | CN101563560B (OSRAM) |
| SG (1) | SG177902A1 (OSRAM) |
| WO (1) | WO2008079722A2 (OSRAM) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| JP5194315B2 (ja) * | 2008-07-04 | 2013-05-08 | 株式会社昭和真空 | スパッタリング装置 |
| US8900471B2 (en) * | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
| WO2011117916A1 (ja) * | 2010-03-24 | 2011-09-29 | キヤノンアネルバ株式会社 | 電子デバイスの製造方法およびスパッタリング方法 |
| CN103069542A (zh) * | 2010-08-20 | 2013-04-24 | 应用材料公司 | 延长寿命的沉积环 |
| CN103140913B (zh) * | 2010-10-29 | 2016-09-28 | 应用材料公司 | 用于物理气相沉积腔室的沉积环及静电夹盘 |
| CN102676997A (zh) * | 2012-06-11 | 2012-09-19 | 上海宏力半导体制造有限公司 | 一种物理气相沉积设备 |
| JP5934427B2 (ja) * | 2013-02-28 | 2016-06-15 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| CN104746019B (zh) * | 2013-12-26 | 2018-01-19 | 北京北方华创微电子装备有限公司 | 反应腔室及等离子体加工设备 |
| CN105097604B (zh) * | 2014-05-05 | 2018-11-06 | 北京北方华创微电子装备有限公司 | 工艺腔室 |
| WO2015188879A1 (en) * | 2014-06-13 | 2015-12-17 | Applied Materials, Inc. | Flat edge design for better uniformity and increased edge lifetime |
| US10115573B2 (en) * | 2014-10-14 | 2018-10-30 | Applied Materials, Inc. | Apparatus for high compressive stress film deposition to improve kit life |
| US10546733B2 (en) * | 2014-12-31 | 2020-01-28 | Applied Materials, Inc. | One-piece process kit shield |
| KR20170128585A (ko) * | 2015-03-20 | 2017-11-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온 폴리머 본드를 이용하여 금속 베이스에 본딩 결합된 세라믹 정전 척 |
| TWM534436U (en) * | 2015-07-03 | 2016-12-21 | Applied Materials Inc | Frame, multi-piece under substrate cover frame and processing chamber |
| SG10202108705SA (en) * | 2015-07-03 | 2021-09-29 | Applied Materials Inc | Process kit having tall deposition ring and deposition ring clamp |
| US10103012B2 (en) * | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
| JP7225599B2 (ja) * | 2018-08-10 | 2023-02-21 | 東京エレクトロン株式会社 | 成膜装置 |
| US11961723B2 (en) * | 2018-12-17 | 2024-04-16 | Applied Materials, Inc. | Process kit having tall deposition ring for PVD chamber |
| CN110670049A (zh) * | 2019-11-19 | 2020-01-10 | 武汉新芯集成电路制造有限公司 | 一种气相沉积方法及装置 |
| TW202129045A (zh) * | 2019-12-05 | 2021-08-01 | 美商應用材料股份有限公司 | 多陰極沉積系統與方法 |
| US11339466B2 (en) * | 2020-03-20 | 2022-05-24 | Applied Materials, Inc. | Heated shield for physical vapor deposition chamber |
| CN111471976A (zh) * | 2020-05-21 | 2020-07-31 | 中国科学院半导体研究所 | 衬底托 |
| US11492697B2 (en) * | 2020-06-22 | 2022-11-08 | Applied Materials, Inc. | Apparatus for improved anode-cathode ratio for rf chambers |
| US11600477B2 (en) * | 2020-12-14 | 2023-03-07 | Applied Materials, Inc. | Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process |
| CN114717514B (zh) * | 2021-01-06 | 2023-12-15 | 鑫天虹(厦门)科技有限公司 | 薄膜沉积设备 |
| US20240186176A1 (en) * | 2022-12-02 | 2024-06-06 | Onto Innovation Inc. | Stage actuator particle shield |
| CN117305814A (zh) * | 2023-09-22 | 2023-12-29 | 上海中欣晶圆半导体科技有限公司 | 一种常压化学气相沉积用治具及其使用方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
| US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
| US6051122A (en) * | 1997-08-21 | 2000-04-18 | Applied Materials, Inc. | Deposition shield assembly for a semiconductor wafer processing system |
| JPH11229132A (ja) * | 1998-02-19 | 1999-08-24 | Toshiba Corp | スパッタ成膜装置およびスパッタ成膜方法 |
| CN1172022C (zh) * | 2001-10-11 | 2004-10-20 | 矽统科技股份有限公司 | 沉积过程的工作平台 |
| JP2005517809A (ja) * | 2002-02-14 | 2005-06-16 | トリコン テクノロジーズ リミテッド | プラズマ処理装置 |
| US7670436B2 (en) * | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
| US7579067B2 (en) * | 2004-11-24 | 2009-08-25 | Applied Materials, Inc. | Process chamber component with layered coating and method |
-
2007
- 2007-12-13 WO PCT/US2007/087466 patent/WO2008079722A2/en not_active Ceased
- 2007-12-13 CN CN2007800470734A patent/CN101563560B/zh active Active
- 2007-12-13 JP JP2009543091A patent/JP5666133B2/ja active Active
- 2007-12-13 KR KR1020097014871A patent/KR101504085B1/ko active Active
- 2007-12-13 SG SG2011094000A patent/SG177902A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR101504085B1 (ko) | 2015-03-19 |
| CN101563560B (zh) | 2012-07-18 |
| WO2008079722A2 (en) | 2008-07-03 |
| WO2008079722A3 (en) | 2009-04-16 |
| JP2010513722A (ja) | 2010-04-30 |
| CN101563560A (zh) | 2009-10-21 |
| KR20090094144A (ko) | 2009-09-03 |
| JP5666133B2 (ja) | 2015-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8221602B2 (en) | Non-contact process kit | |
| SG177902A1 (en) | Non-contact process kit | |
| US7718045B2 (en) | Ground shield with reentrant feature | |
| US9689070B2 (en) | Deposition ring and electrostatic chuck for physical vapor deposition chamber | |
| US9476122B2 (en) | Wafer processing deposition shielding components | |
| CN102017077B (zh) | 用于射频物理气相沉积的处理套组 | |
| JP5563197B2 (ja) | 基板処理チャンバ用処理キット | |
| CN102576664A (zh) | 用于rf物理气相沉积的处理套件 | |
| US9062379B2 (en) | Wafer processing deposition shielding components | |
| KR20160003492U (ko) | 물리 기상 증착 챔버를 위한 실드, 스퍼터링 타겟의 스퍼터링 표면을 에워싸기 위한 실드, 및 프로세스 키트 | |
| TWI488986B (zh) | 非接觸式製程套組 |