SG176274A1 - Two component etching - Google Patents
Two component etching Download PDFInfo
- Publication number
- SG176274A1 SG176274A1 SG2011087863A SG2011087863A SG176274A1 SG 176274 A1 SG176274 A1 SG 176274A1 SG 2011087863 A SG2011087863 A SG 2011087863A SG 2011087863 A SG2011087863 A SG 2011087863A SG 176274 A1 SG176274 A1 SG 176274A1
- Authority
- SG
- Singapore
- Prior art keywords
- composition according
- fluoride
- group
- etching
- ink
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 55
- 239000000203 mixture Substances 0.000 claims abstract description 78
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 41
- 239000002253 acid Substances 0.000 claims description 31
- -1 ammonia Chemical class 0.000 claims description 25
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 19
- 230000002378 acidificating effect Effects 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 16
- 150000007513 acids Chemical class 0.000 claims description 16
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 150000001412 amines Chemical class 0.000 claims description 9
- 229920001223 polyethylene glycol Polymers 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 5
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 5
- 150000002222 fluorine compounds Chemical class 0.000 claims description 5
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 5
- 239000011707 mineral Substances 0.000 claims description 5
- 150000007524 organic acids Chemical class 0.000 claims description 5
- 235000005985 organic acids Nutrition 0.000 claims description 5
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 claims description 4
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- 229910001515 alkali metal fluoride Inorganic materials 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229920000083 poly(allylamine) Polymers 0.000 claims description 4
- 229920002717 polyvinylpyridine Polymers 0.000 claims description 4
- 150000007942 carboxylates Chemical class 0.000 claims description 3
- 150000004324 hydroxyarenes Chemical class 0.000 claims description 3
- DLDWUFCUUXXYTB-UHFFFAOYSA-N (2-oxo-1,2-diphenylethyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 DLDWUFCUUXXYTB-UHFFFAOYSA-N 0.000 claims description 2
- MSWVMWGCNZQPIA-UHFFFAOYSA-N 1-fluoropropan-2-one Chemical compound CC(=O)CF MSWVMWGCNZQPIA-UHFFFAOYSA-N 0.000 claims description 2
- NJRDRQWVNAENQG-UHFFFAOYSA-N 2,3-dimethylbutane-2,3-diol;1,4-dioxane Chemical compound C1COCCO1.CC(C)(O)C(C)(C)O NJRDRQWVNAENQG-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- SZIFAVKTNFCBPC-UHFFFAOYSA-N 2-chloroethanol Chemical compound OCCCl SZIFAVKTNFCBPC-UHFFFAOYSA-N 0.000 claims description 2
- IVPMOIBJGRBDQI-UHFFFAOYSA-N 4-methylbenzenesulfonic acid;nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1.CC1=CC=C(S(O)(=O)=O)C=C1 IVPMOIBJGRBDQI-UHFFFAOYSA-N 0.000 claims description 2
- MBXXQYJBFRRFCK-UHFFFAOYSA-N benzyl fluoride Chemical compound FCC1=CC=CC=C1 MBXXQYJBFRRFCK-UHFFFAOYSA-N 0.000 claims description 2
- 229950011260 betanaphthol Drugs 0.000 claims description 2
- ZCQCKDXLBKERRC-UHFFFAOYSA-M diphenyliodanium;fluoride Chemical compound [F-].C=1C=CC=CC=1[I+]C1=CC=CC=C1 ZCQCKDXLBKERRC-UHFFFAOYSA-M 0.000 claims description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 2
- 229920006324 polyoxymethylene Polymers 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- UUFQTNFCRMXOAE-UHFFFAOYSA-N 1-methylmethylene Chemical compound C[CH] UUFQTNFCRMXOAE-UHFFFAOYSA-N 0.000 claims 1
- IZZYABADQVQHLC-UHFFFAOYSA-N 4-methylbenzenesulfonyl fluoride Chemical compound CC1=CC=C(S(F)(=O)=O)C=C1 IZZYABADQVQHLC-UHFFFAOYSA-N 0.000 claims 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims 1
- 238000009877 rendering Methods 0.000 claims 1
- 239000012363 selectfluor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 51
- 230000008569 process Effects 0.000 abstract description 30
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000000976 ink Substances 0.000 description 73
- 239000000758 substrate Substances 0.000 description 41
- 239000010410 layer Substances 0.000 description 37
- 238000000151 deposition Methods 0.000 description 27
- 230000008021 deposition Effects 0.000 description 23
- 238000007641 inkjet printing Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 238000013459 approach Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 238000007639 printing Methods 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 150000001298 alcohols Chemical class 0.000 description 10
- 230000003993 interaction Effects 0.000 description 9
- 238000001465 metallisation Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000002798 polar solvent Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 150000002170 ethers Chemical class 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000009835 boiling Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- SAERAINFZWAKGQ-UHFFFAOYSA-N 2-methylbenzenesulfonyl fluoride Chemical compound CC1=CC=CC=C1S(F)(=O)=O SAERAINFZWAKGQ-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 150000003973 alkyl amines Chemical class 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000008064 anhydrides Chemical group 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011960 computer-aided design Methods 0.000 description 2
- HOWGUJZVBDQJKV-UHFFFAOYSA-N docosane Chemical compound CCCCCCCCCCCCCCCCCCCCCC HOWGUJZVBDQJKV-UHFFFAOYSA-N 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000004673 fluoride salts Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012943 hotmelt Substances 0.000 description 2
- 239000003906 humectant Substances 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 235000011056 potassium acetate Nutrition 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- OBTWBSRJZRCYQV-UHFFFAOYSA-N sulfuryl difluoride Chemical class FS(F)(=O)=O OBTWBSRJZRCYQV-UHFFFAOYSA-N 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- NOOLISFMXDJSKH-UTLUCORTSA-N (+)-Neomenthol Chemical compound CC(C)[C@@H]1CC[C@@H](C)C[C@@H]1O NOOLISFMXDJSKH-UTLUCORTSA-N 0.000 description 1
- JAAJQSRLGAYGKZ-UHFFFAOYSA-N 1,2,3,4-tetrahydronaphthalen-1-ol Chemical compound C1=CC=C2C(O)CCCC2=C1 JAAJQSRLGAYGKZ-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- NOOLISFMXDJSKH-UHFFFAOYSA-N DL-menthol Natural products CC(C)C1CCC(C)CC1O NOOLISFMXDJSKH-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- IBKFINZPDOWMRT-UHFFFAOYSA-N benzene;sulfuryl difluoride Chemical class FS(F)(=O)=O.C1=CC=CC=C1 IBKFINZPDOWMRT-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical class C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229920001600 hydrophobic polymer Polymers 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229940041616 menthol Drugs 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- BEZDDPMMPIDMGJ-UHFFFAOYSA-N pentamethylbenzene Chemical compound CC1=CC(C)=C(C)C(C)=C1C BEZDDPMMPIDMGJ-UHFFFAOYSA-N 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 1
- CNHKTJQFIWOBFG-UHFFFAOYSA-N sulfuryl difluoride;toluene Chemical compound FS(F)(=O)=O.CC1=CC=CC=C1 CNHKTJQFIWOBFG-UHFFFAOYSA-N 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09007411 | 2009-06-04 | ||
| PCT/EP2010/002949 WO2010139390A1 (en) | 2009-06-04 | 2010-05-12 | Two component etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG176274A1 true SG176274A1 (en) | 2012-01-30 |
Family
ID=42830717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011087863A SG176274A1 (en) | 2009-06-04 | 2010-05-12 | Two component etching |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8647526B2 (enExample) |
| EP (1) | EP2438140A1 (enExample) |
| JP (1) | JP5801798B2 (enExample) |
| KR (1) | KR20120036939A (enExample) |
| CN (1) | CN102449112B (enExample) |
| SG (1) | SG176274A1 (enExample) |
| TW (1) | TWI481693B (enExample) |
| WO (1) | WO2010139390A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013008877A (ja) * | 2011-06-24 | 2013-01-10 | Kuraray Co Ltd | カーボンナノチューブ層とオーバーコート層とを具備する複合層のパターン形成方法、及び前記方法で形成されたパターン |
| CN102929418A (zh) * | 2011-08-09 | 2013-02-13 | 群康科技(深圳)有限公司 | 装饰膜、影像显示系统及触控感测装置的制造方法 |
| TWI495560B (zh) * | 2011-08-09 | 2015-08-11 | Chimei Innolux Corp | 透明基底上的裝飾膜、影像顯示系統及觸控感測裝置之製造方法 |
| US20140234198A1 (en) * | 2011-08-12 | 2014-08-21 | Daikin Industries, Ltd. | Etching method and method for performing surface processing on solid material for solar cell |
| JP6011234B2 (ja) * | 2012-10-16 | 2016-10-19 | 日立化成株式会社 | 組成物 |
| JP6136186B2 (ja) * | 2012-10-16 | 2017-05-31 | 日立化成株式会社 | 液状組成物 |
| JP2014082330A (ja) * | 2012-10-16 | 2014-05-08 | Hitachi Chemical Co Ltd | ＳｉＮ膜の除去方法 |
| JP6060611B2 (ja) * | 2012-10-16 | 2017-01-18 | 日立化成株式会社 | 組成物 |
| US9550940B2 (en) | 2012-10-16 | 2017-01-24 | Hitachi Chemical Company, Ltd. | Etching material |
| EP2920809B1 (en) * | 2012-11-14 | 2021-09-01 | Sun Chemical Corporation | Compositions and processes for fabrication of rear passivated solar cells |
| JP6369460B2 (ja) * | 2013-05-31 | 2018-08-08 | 日立化成株式会社 | エッチング組成物 |
| CN104993019A (zh) * | 2015-07-09 | 2015-10-21 | 苏州阿特斯阳光电力科技有限公司 | 一种局部背接触太阳能电池的制备方法 |
| TWI550886B (zh) * | 2015-07-10 | 2016-09-21 | 國立屏東科技大學 | 矽基板表面粗糙化方法 |
| JP2016086187A (ja) * | 2016-02-01 | 2016-05-19 | 日立化成株式会社 | ＳｉＮ膜の除去方法 |
| JP7603517B2 (ja) * | 2021-04-26 | 2024-12-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、および、基板処理装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
| US4781792A (en) * | 1985-05-07 | 1988-11-01 | Hogan James V | Method for permanently marking glass |
| GB9210514D0 (en) * | 1992-05-16 | 1992-07-01 | Micro Image Technology Ltd | Etching compositions |
| WO1997002958A1 (en) * | 1995-07-10 | 1997-01-30 | Advanced Chemical Systems International | Organic amine/hydrogen fluoride etchant composition and method |
| US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
| DE19962136A1 (de) * | 1999-12-22 | 2001-06-28 | Merck Patent Gmbh | Verfahren zur Rauhätzung von Siliziumsolarzellen |
| KR100812891B1 (ko) | 2000-04-28 | 2008-03-11 | 메르크 파텐트 게엠베하 | 무기물 표면용 에칭 페이스트 |
| JP2004503081A (ja) * | 2000-06-30 | 2004-01-29 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | シリコンウェーハのエッチング方法 |
| GB2367788A (en) * | 2000-10-16 | 2002-04-17 | Seiko Epson Corp | Etching using an ink jet print head |
| DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
| US20040188385A1 (en) * | 2003-03-26 | 2004-09-30 | Kenji Yamada | Etching agent composition for thin films having high permittivity and process for etching |
| AU2003901559A0 (en) | 2003-04-07 | 2003-05-01 | Unisearch Limited | Glass texturing method |
| CN1853138B (zh) * | 2003-10-14 | 2011-06-15 | 株式会社Adeka | 光致抗蚀剂组合物 |
| JP4964119B2 (ja) * | 2004-03-05 | 2012-06-27 | ハネウェル・インターナショナル・インコーポレーテッド | 複素環式アミン類のイオン液体 |
| DE102005007743A1 (de) * | 2005-01-11 | 2006-07-20 | Merck Patent Gmbh | Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten |
| DE102005033724A1 (de) * | 2005-07-15 | 2007-01-18 | Merck Patent Gmbh | Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten |
| GB0608463D0 (en) * | 2006-04-27 | 2006-06-07 | Sericol Ltd | A printing ink |
| DE602006014551D1 (de) * | 2006-10-31 | 2010-07-08 | Soitec Silicon On Insulator | Verfahren zur Charakterisierung von Defekten auf Silizium-Oberflächen, Ätzlösung für Silizium-Oberflächen und Verfahren zur Behandlung von Silizium-Oberflächen mit der Ätzlösung |
| US7582398B2 (en) * | 2007-06-13 | 2009-09-01 | Xerox Corporation | Inkless reimageable printing paper and method |
| JP4947654B2 (ja) * | 2007-09-28 | 2012-06-06 | シャープ株式会社 | 誘電体膜のパターニング方法 |
-
2010
- 2010-05-12 SG SG2011087863A patent/SG176274A1/en unknown
- 2010-05-12 WO PCT/EP2010/002949 patent/WO2010139390A1/en not_active Ceased
- 2010-05-12 US US13/375,812 patent/US8647526B2/en not_active Expired - Fee Related
- 2010-05-12 JP JP2012513486A patent/JP5801798B2/ja not_active Expired - Fee Related
- 2010-05-12 CN CN201080023477.1A patent/CN102449112B/zh not_active Expired - Fee Related
- 2010-05-12 EP EP10721703A patent/EP2438140A1/en not_active Withdrawn
- 2010-05-12 KR KR1020127000228A patent/KR20120036939A/ko not_active Ceased
- 2010-06-01 TW TW099117602A patent/TWI481693B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120036939A (ko) | 2012-04-18 |
| TWI481693B (zh) | 2015-04-21 |
| CN102449112A (zh) | 2012-05-09 |
| US20120085965A1 (en) | 2012-04-12 |
| WO2010139390A1 (en) | 2010-12-09 |
| US8647526B2 (en) | 2014-02-11 |
| EP2438140A1 (en) | 2012-04-11 |
| JP2012529163A (ja) | 2012-11-15 |
| JP5801798B2 (ja) | 2015-10-28 |
| HK1169136A1 (en) | 2013-01-18 |
| TW201116612A (en) | 2011-05-16 |
| CN102449112B (zh) | 2014-09-24 |
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