CN102449112B - 双组分蚀刻 - Google Patents

双组分蚀刻 Download PDF

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Publication number
CN102449112B
CN102449112B CN201080023477.1A CN201080023477A CN102449112B CN 102449112 B CN102449112 B CN 102449112B CN 201080023477 A CN201080023477 A CN 201080023477A CN 102449112 B CN102449112 B CN 102449112B
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CN
China
Prior art keywords
composition
acid
ink
fluoride
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080023477.1A
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English (en)
Chinese (zh)
Other versions
CN102449112A (zh
Inventor
O·多尔
E·普鲁默
M·詹姆斯
I·科勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of CN102449112A publication Critical patent/CN102449112A/zh
Application granted granted Critical
Publication of CN102449112B publication Critical patent/CN102449112B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
CN201080023477.1A 2009-06-04 2010-05-12 双组分蚀刻 Expired - Fee Related CN102449112B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09007411 2009-06-04
EP09007411.3 2009-06-04
PCT/EP2010/002949 WO2010139390A1 (en) 2009-06-04 2010-05-12 Two component etching

Publications (2)

Publication Number Publication Date
CN102449112A CN102449112A (zh) 2012-05-09
CN102449112B true CN102449112B (zh) 2014-09-24

Family

ID=42830717

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080023477.1A Expired - Fee Related CN102449112B (zh) 2009-06-04 2010-05-12 双组分蚀刻

Country Status (8)

Country Link
US (1) US8647526B2 (enExample)
EP (1) EP2438140A1 (enExample)
JP (1) JP5801798B2 (enExample)
KR (1) KR20120036939A (enExample)
CN (1) CN102449112B (enExample)
SG (1) SG176274A1 (enExample)
TW (1) TWI481693B (enExample)
WO (1) WO2010139390A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008877A (ja) * 2011-06-24 2013-01-10 Kuraray Co Ltd カーボンナノチューブ層とオーバーコート層とを具備する複合層のパターン形成方法、及び前記方法で形成されたパターン
CN102929418A (zh) * 2011-08-09 2013-02-13 群康科技(深圳)有限公司 装饰膜、影像显示系统及触控感测装置的制造方法
TWI495560B (zh) * 2011-08-09 2015-08-11 Chimei Innolux Corp 透明基底上的裝飾膜、影像顯示系統及觸控感測裝置之製造方法
US20140234198A1 (en) * 2011-08-12 2014-08-21 Daikin Industries, Ltd. Etching method and method for performing surface processing on solid material for solar cell
JP6011234B2 (ja) * 2012-10-16 2016-10-19 日立化成株式会社 組成物
JP6136186B2 (ja) * 2012-10-16 2017-05-31 日立化成株式会社 液状組成物
JP2014082330A (ja) * 2012-10-16 2014-05-08 Hitachi Chemical Co Ltd ＳｉＮ膜の除去方法
JP6060611B2 (ja) * 2012-10-16 2017-01-18 日立化成株式会社 組成物
US9550940B2 (en) 2012-10-16 2017-01-24 Hitachi Chemical Company, Ltd. Etching material
EP2920809B1 (en) * 2012-11-14 2021-09-01 Sun Chemical Corporation Compositions and processes for fabrication of rear passivated solar cells
JP6369460B2 (ja) * 2013-05-31 2018-08-08 日立化成株式会社 エッチング組成物
CN104993019A (zh) * 2015-07-09 2015-10-21 苏州阿特斯阳光电力科技有限公司 一种局部背接触太阳能电池的制备方法
TWI550886B (zh) * 2015-07-10 2016-09-21 國立屏東科技大學 矽基板表面粗糙化方法
JP2016086187A (ja) * 2016-02-01 2016-05-19 日立化成株式会社 ＳｉＮ膜の除去方法
JP7603517B2 (ja) * 2021-04-26 2024-12-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993023493A1 (en) * 1992-05-16 1993-11-25 Micro-Image Technology Limited Etching compositions
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
EP1295320A2 (en) * 2000-06-30 2003-03-26 MEMC Electronic Materials, Inc. Process for etching silicon wafers
CN1950338A (zh) * 2004-03-05 2007-04-18 霍尼韦尔国际公司 杂环胺的离子液体
EP1904413A1 (de) * 2005-07-15 2008-04-02 Merck Patent GmbH Druckfähige ätzmedien für siliziumdioxid- und siliziumnitridschichten
TW200819519A (en) * 2006-10-31 2008-05-01 Soitec Silicon On Insulator Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4781792A (en) * 1985-05-07 1988-11-01 Hogan James V Method for permanently marking glass
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
DE19962136A1 (de) * 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
KR100812891B1 (ko) 2000-04-28 2008-03-11 메르크 파텐트 게엠베하 무기물 표면용 에칭 페이스트
GB2367788A (en) * 2000-10-16 2002-04-17 Seiko Epson Corp Etching using an ink jet print head
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
US20040188385A1 (en) * 2003-03-26 2004-09-30 Kenji Yamada Etching agent composition for thin films having high permittivity and process for etching
AU2003901559A0 (en) 2003-04-07 2003-05-01 Unisearch Limited Glass texturing method
CN1853138B (zh) * 2003-10-14 2011-06-15 株式会社Adeka 光致抗蚀剂组合物
DE102005007743A1 (de) * 2005-01-11 2006-07-20 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten
GB0608463D0 (en) * 2006-04-27 2006-06-07 Sericol Ltd A printing ink
US7582398B2 (en) * 2007-06-13 2009-09-01 Xerox Corporation Inkless reimageable printing paper and method
JP4947654B2 (ja) * 2007-09-28 2012-06-06 シャープ株式会社 誘電体膜のパターニング方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993023493A1 (en) * 1992-05-16 1993-11-25 Micro-Image Technology Limited Etching compositions
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
EP1295320A2 (en) * 2000-06-30 2003-03-26 MEMC Electronic Materials, Inc. Process for etching silicon wafers
CN1950338A (zh) * 2004-03-05 2007-04-18 霍尼韦尔国际公司 杂环胺的离子液体
EP1904413A1 (de) * 2005-07-15 2008-04-02 Merck Patent GmbH Druckfähige ätzmedien für siliziumdioxid- und siliziumnitridschichten
TW200819519A (en) * 2006-10-31 2008-05-01 Soitec Silicon On Insulator Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition

Also Published As

Publication number Publication date
KR20120036939A (ko) 2012-04-18
TWI481693B (zh) 2015-04-21
CN102449112A (zh) 2012-05-09
US20120085965A1 (en) 2012-04-12
WO2010139390A1 (en) 2010-12-09
US8647526B2 (en) 2014-02-11
EP2438140A1 (en) 2012-04-11
JP2012529163A (ja) 2012-11-15
SG176274A1 (en) 2012-01-30
JP5801798B2 (ja) 2015-10-28
HK1169136A1 (en) 2013-01-18
TW201116612A (en) 2011-05-16

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