SG159484A1 - Method of manufacturing soi substrate - Google Patents
Method of manufacturing soi substrateInfo
- Publication number
- SG159484A1 SG159484A1 SG200905695-3A SG2009056953A SG159484A1 SG 159484 A1 SG159484 A1 SG 159484A1 SG 2009056953 A SG2009056953 A SG 2009056953A SG 159484 A1 SG159484 A1 SG 159484A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- semiconductor substrate
- single crystal
- manufacturing
- crystal semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
- H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008227725 | 2008-09-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG159484A1 true SG159484A1 (en) | 2010-03-30 |
Family
ID=41799628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200905695-3A SG159484A1 (en) | 2008-09-05 | 2009-08-26 | Method of manufacturing soi substrate |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8187953B2 (https=) |
| JP (1) | JP5572347B2 (https=) |
| SG (1) | SG159484A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5364345B2 (ja) * | 2008-11-12 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| US8318588B2 (en) * | 2009-08-25 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| SG178179A1 (en) * | 2009-10-09 | 2012-03-29 | Semiconductor Energy Lab | Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate |
| US8367519B2 (en) * | 2009-12-30 | 2013-02-05 | Memc Electronic Materials, Inc. | Method for the preparation of a multi-layered crystalline structure |
| EP2532773A4 (en) * | 2010-02-05 | 2013-12-11 | Sumitomo Electric Industries | METHOD FOR PRODUCING A SILICON CARBIDE SUBSTRATE |
| US9287353B2 (en) | 2010-11-30 | 2016-03-15 | Kyocera Corporation | Composite substrate and method of manufacturing the same |
| AU2011337629A1 (en) * | 2010-11-30 | 2013-05-02 | Kyocera Corporation | Composite substrate and production method |
| TWI570809B (zh) * | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9123529B2 (en) | 2011-06-21 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| CN106409650B (zh) * | 2015-08-03 | 2019-01-29 | 沈阳硅基科技有限公司 | 一种硅片直接键合方法 |
| KR20190027821A (ko) * | 2016-07-12 | 2019-03-15 | 큐맷, 인코포레이티드 | 재생을 거친 도너 기판의 방법 |
| WO2018011731A1 (en) * | 2016-07-12 | 2018-01-18 | QMAT, Inc. | Method of a donor substrate undergoing reclamation |
| US20180033609A1 (en) * | 2016-07-28 | 2018-02-01 | QMAT, Inc. | Removal of non-cleaved/non-transferred material from donor substrate |
| US11289330B2 (en) | 2019-09-30 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator (SOI) substrate and method for forming |
| FR3163205A1 (fr) * | 2024-06-10 | 2025-12-12 | Soitec | Procédé de fabrication d’une plaquette donneuse pour le transfert de couches minces, et plaquette donneuse |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140786A (ja) * | 1997-07-18 | 1999-02-12 | Denso Corp | 半導体基板及びその製造方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| JP2000223682A (ja) | 1999-02-02 | 2000-08-11 | Canon Inc | 基体の処理方法及び半導体基板の製造方法 |
| JP2000349266A (ja) | 1999-03-26 | 2000-12-15 | Canon Inc | 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法 |
| FR2834123B1 (fr) | 2001-12-21 | 2005-02-04 | Soitec Silicon On Insulator | Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report |
| TWI233154B (en) | 2002-12-06 | 2005-05-21 | Soitec Silicon On Insulator | Method for recycling a substrate |
| JP5284576B2 (ja) * | 2006-11-10 | 2013-09-11 | 信越化学工業株式会社 | 半導体基板の製造方法 |
-
2009
- 2009-08-26 SG SG200905695-3A patent/SG159484A1/en unknown
- 2009-08-31 US US12/550,520 patent/US8187953B2/en not_active Expired - Fee Related
- 2009-09-01 JP JP2009201771A patent/JP5572347B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20100062546A1 (en) | 2010-03-11 |
| JP2010087492A (ja) | 2010-04-15 |
| US8187953B2 (en) | 2012-05-29 |
| JP5572347B2 (ja) | 2014-08-13 |
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