SG157301A1 - Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes - Google Patents

Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Info

Publication number
SG157301A1
SG157301A1 SG200903198-0A SG2009031980A SG157301A1 SG 157301 A1 SG157301 A1 SG 157301A1 SG 2009031980 A SG2009031980 A SG 2009031980A SG 157301 A1 SG157301 A1 SG 157301A1
Authority
SG
Singapore
Prior art keywords
electrodes
gas
interior
adjacent pair
plasma processing
Prior art date
Application number
SG200903198-0A
Other languages
English (en)
Inventor
Thomas V Bolden Ii
Louis Fierro
James D Getty
Original Assignee
Nordson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordson Corp filed Critical Nordson Corp
Publication of SG157301A1 publication Critical patent/SG157301A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J15/00—Gas-filled discharge tubes with gaseous cathodes, e.g. plasma cathode
    • H01J15/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
SG200903198-0A 2008-05-20 2009-05-07 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes SG157301A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/123,954 US8372238B2 (en) 2008-05-20 2008-05-20 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Publications (1)

Publication Number Publication Date
SG157301A1 true SG157301A1 (en) 2009-12-29

Family

ID=41341204

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2011085818A SG176502A1 (en) 2008-05-20 2009-05-07 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
SG200903198-0A SG157301A1 (en) 2008-05-20 2009-05-07 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2011085818A SG176502A1 (en) 2008-05-20 2009-05-07 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Country Status (6)

Country Link
US (2) US8372238B2 (ja)
JP (2) JP5713542B2 (ja)
KR (2) KR101645191B1 (ja)
CN (2) CN101587827B (ja)
SG (2) SG176502A1 (ja)
TW (1) TWI519212B (ja)

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US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
KR20120002795A (ko) * 2010-07-01 2012-01-09 주성엔지니어링(주) 피딩라인의 차폐수단을 가지는 전원공급수단 및 이를 포함한 기판처리장치
TW201226296A (en) * 2010-12-22 2012-07-01 Metal Ind Res & Dev Ct Continuous feeder apparatus applied in vacuum process
US8796075B2 (en) 2011-01-11 2014-08-05 Nordson Corporation Methods for vacuum assisted underfilling
CN102652946A (zh) * 2011-03-04 2012-09-05 富葵精密组件(深圳)有限公司 等离子清洁装置及等离子清洁方法
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
WO2013040454A1 (en) * 2011-09-15 2013-03-21 Cold Plasma Medical Technologies, Inc. Cold plasma treatment devices and associated methods
US8597982B2 (en) 2011-10-31 2013-12-03 Nordson Corporation Methods of fabricating electronics assemblies
US9840778B2 (en) * 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
CN102881551B (zh) * 2012-09-12 2015-05-27 珠海宝丰堂电子科技有限公司 具有气流限制机构的等离子体处理系统及其方法
CN103904016A (zh) * 2014-04-04 2014-07-02 株洲南车时代电气股份有限公司 硅片承载装置
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TWI800505B (zh) * 2017-04-24 2023-05-01 美商應用材料股份有限公司 對電漿反應器的電極施加功率
CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
US11602039B2 (en) 2018-12-20 2023-03-07 Mécanique Analytique Inc Electrode assemblies for plasma discharge devices
CN110223904A (zh) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 一种具有法拉第屏蔽装置的等离子体处理系统

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US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
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Also Published As

Publication number Publication date
JP6078571B2 (ja) 2017-02-08
JP2009295580A (ja) 2009-12-17
US20130139967A1 (en) 2013-06-06
CN101587827B (zh) 2013-09-04
JP2015146317A (ja) 2015-08-13
JP5713542B2 (ja) 2015-05-07
TW201004493A (en) 2010-01-16
CN103474327A (zh) 2013-12-25
US10109448B2 (en) 2018-10-23
KR20090121225A (ko) 2009-11-25
KR101695632B1 (ko) 2017-01-13
KR101645191B1 (ko) 2016-08-12
US20090288773A1 (en) 2009-11-26
SG176502A1 (en) 2011-12-29
US8372238B2 (en) 2013-02-12
KR20160095654A (ko) 2016-08-11
CN101587827A (zh) 2009-11-25
CN103474327B (zh) 2016-03-16
TWI519212B (zh) 2016-01-21

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