SG152216A1 - Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus - Google Patents

Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus

Info

Publication number
SG152216A1
SG152216A1 SG200808313-1A SG2008083131A SG152216A1 SG 152216 A1 SG152216 A1 SG 152216A1 SG 2008083131 A SG2008083131 A SG 2008083131A SG 152216 A1 SG152216 A1 SG 152216A1
Authority
SG
Singapore
Prior art keywords
substrate
sealing coating
lithography
preparing
device manufacturing
Prior art date
Application number
SG200808313-1A
Other languages
English (en)
Inventor
Der Heijden Marcus Theodoor Wilhelmus Van
Marco Koert Stavenga
Patrick Wong
Den Bogaard Frederik Johannes Van
Vries Dirk De
David Bessems
Jacques Roger Alice Mycke
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG152216A1 publication Critical patent/SG152216A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
SG200808313-1A 2007-11-06 2008-11-06 Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus SG152216A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US99620407P 2007-11-06 2007-11-06
US7136208P 2008-04-24 2008-04-24

Publications (1)

Publication Number Publication Date
SG152216A1 true SG152216A1 (en) 2009-05-29

Family

ID=40342084

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200808313-1A SG152216A1 (en) 2007-11-06 2008-11-06 Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus

Country Status (7)

Country Link
US (2) US8114568B2 (fr)
EP (1) EP2058703A1 (fr)
JP (1) JP2009117832A (fr)
KR (1) KR101029761B1 (fr)
CN (2) CN102323725A (fr)
SG (1) SG152216A1 (fr)
TW (1) TW200935183A (fr)

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JP2012510384A (ja) * 2008-12-02 2012-05-10 オセ−テクノロジーズ ビーブイ インクジェットプリントヘッドの製造方法
US8397785B2 (en) * 2009-11-17 2013-03-19 Asm Assembly Automation Ltd Transfer apparatus for multiple adhesives
CN102207685B (zh) * 2011-01-22 2012-11-21 浙江大学 用于浸没式光刻机的磁流体注入和回收控制装置
US9187364B2 (en) * 2013-02-28 2015-11-17 Corning Incorporated Method of glass edge coating
JP6332948B2 (ja) * 2013-11-28 2018-05-30 キヤノン株式会社 露光装置およびそれを用いたデバイスの製造方法
CN104916529A (zh) * 2014-03-14 2015-09-16 上海华虹宏力半导体制造有限公司 一种用于沟槽功率mosfet晶片的沟槽制备方法
JP6560828B2 (ja) 2015-12-23 2019-08-14 エーエスエムエル ネザーランズ ビー．ブイ． 基板上の感光性材料を除去するための方法
EP3481661A4 (fr) 2016-07-05 2020-03-11 Nauto, Inc. Système et procédé d'identification automatique de conducteur
EP3497405B1 (fr) 2016-08-09 2022-06-15 Nauto, Inc. Système et procédé de localisation de précision et de cartographie
JP6815799B2 (ja) * 2016-09-13 2021-01-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10733460B2 (en) 2016-09-14 2020-08-04 Nauto, Inc. Systems and methods for safe route determination
EP3535646A4 (fr) 2016-11-07 2020-08-12 Nauto, Inc. Système et procédé de détermination de distraction d'un conducteur
US10453150B2 (en) 2017-06-16 2019-10-22 Nauto, Inc. System and method for adverse vehicle event determination
US10073347B1 (en) * 2017-08-24 2018-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor method of protecting wafer from bevel contamination
WO2019169031A1 (fr) 2018-02-27 2019-09-06 Nauto, Inc. Procédé de détermination de politique de conduite

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US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6558877B1 (en) 1999-06-01 2003-05-06 Ball Semiconductor, Inc. Jet coating method for semiconductor processing
EP1420300B1 (fr) 2002-11-12 2015-07-29 ASML Netherlands B.V. Appareil lithographique et méthode de fabrication d'un dispositif
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG2010050110A (en) 2002-11-12 2014-06-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4369203B2 (ja) * 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP4101740B2 (ja) * 2003-12-09 2008-06-18 東京エレクトロン株式会社 塗布・現像装置及びレジストパターンの形成方法
JP4474927B2 (ja) 2004-01-20 2010-06-09 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
EP1564592A1 (fr) * 2004-02-17 2005-08-17 Freescale Semiconductor, Inc. Protection de la couche photosensible pour lithographie à immersion
JP3954066B2 (ja) * 2004-02-25 2007-08-08 松下電器産業株式会社 バリア膜形成用材料及びそれを用いたパターン形成方法
EP1783823A4 (fr) 2004-07-21 2009-07-22 Nikon Corp Procédé d'exposition et procédé de fabrication de dispositif
CN1954407B (zh) * 2004-07-21 2010-06-09 尼康股份有限公司 曝光方法及组件制造方法
CN101015039B (zh) 2004-09-17 2010-09-01 尼康股份有限公司 曝光用基板、曝光方法及元件制造方法
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JP4643467B2 (ja) * 2006-02-23 2011-03-02 東京応化工業株式会社 リソグラフィー用洗浄液、およびこれを用いた基材の洗浄方法、並びに薬液供給装置の洗浄方法
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JP2007266074A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法及び液浸リソグラフィーシステム
JP4813333B2 (ja) * 2006-11-21 2011-11-09 東京エレクトロン株式会社 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体
JP2008277748A (ja) * 2007-03-30 2008-11-13 Renesas Technology Corp レジストパターンの形成方法とその方法により製造した半導体デバイス
US20080241489A1 (en) * 2007-03-30 2008-10-02 Renesas Technology Corp. Method of forming resist pattern and semiconductor device manufactured with the same
JP2009117832A (ja) * 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置

Also Published As

Publication number Publication date
US8114568B2 (en) 2012-02-14
JP2009117832A (ja) 2009-05-28
CN101446774A (zh) 2009-06-03
US8394572B2 (en) 2013-03-12
US20120129098A1 (en) 2012-05-24
KR20090046740A (ko) 2009-05-11
US20090201485A1 (en) 2009-08-13
TW200935183A (en) 2009-08-16
CN101446774B (zh) 2012-09-05
CN102323725A (zh) 2012-01-18
EP2058703A1 (fr) 2009-05-13
KR101029761B1 (ko) 2011-04-19

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