SG149774A1 - Buried contact devices for nitride-based films and manufacture therof - Google Patents

Buried contact devices for nitride-based films and manufacture therof

Info

Publication number
SG149774A1
SG149774A1 SG200805369-6A SG2008053696A SG149774A1 SG 149774 A1 SG149774 A1 SG 149774A1 SG 2008053696 A SG2008053696 A SG 2008053696A SG 149774 A1 SG149774 A1 SG 149774A1
Authority
SG
Singapore
Prior art keywords
layer
contact
nitride
based films
manufacture
Prior art date
Application number
SG200805369-6A
Other languages
English (en)
Inventor
Kenneth Scott Alexander Butcher
Marie-Pierre Francoise Fouquet
Alanna Julia June Fernades
Original Assignee
Gallium Entpr Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2007903940A external-priority patent/AU2007903940A0/en
Application filed by Gallium Entpr Pty Ltd filed Critical Gallium Entpr Pty Ltd
Publication of SG149774A1 publication Critical patent/SG149774A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/746—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts for AIII-BV integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
SG200805369-6A 2007-07-20 2008-07-21 Buried contact devices for nitride-based films and manufacture therof SG149774A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU2007903940A AU2007903940A0 (en) 2007-07-20 Buried contact devices for a nitride-based films and manufacture thereof

Publications (1)

Publication Number Publication Date
SG149774A1 true SG149774A1 (en) 2009-02-27

Family

ID=39884395

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200805369-6A SG149774A1 (en) 2007-07-20 2008-07-21 Buried contact devices for nitride-based films and manufacture therof

Country Status (12)

Country Link
US (1) US20090020768A1 (fr)
EP (1) EP2017884A3 (fr)
JP (1) JP2009044149A (fr)
KR (1) KR20090009761A (fr)
CN (1) CN101604665A (fr)
AU (1) AU2008203209A1 (fr)
BR (1) BRPI0805314A2 (fr)
CA (1) CA2638191A1 (fr)
RU (1) RU2394305C2 (fr)
SG (1) SG149774A1 (fr)
TW (1) TW200915476A (fr)
ZA (1) ZA200806479B (fr)

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US20090194026A1 (en) * 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
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US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
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CN102414797A (zh) * 2009-04-29 2012-04-11 应用材料公司 在HVPE中形成原位预GaN沉积层的方法
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KR20120090996A (ko) * 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법
US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features
US20110076400A1 (en) * 2009-09-30 2011-03-31 Applied Materials, Inc. Nanocrystalline diamond-structured carbon coating of silicon carbide
CN102414846A (zh) * 2009-10-07 2012-04-11 应用材料公司 用于led制造的改良多腔室分离处理
US20110204376A1 (en) * 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
US20110207256A1 (en) * 2010-02-24 2011-08-25 Applied Materials, Inc. In-situ acceptor activation with nitrogen and/or oxygen plasma treatment
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KR101935755B1 (ko) * 2010-12-20 2019-01-04 토소가부시키가이샤 금속 갈륨 침투 질화갈륨 성형물 및 이의 제조방법
KR20120099318A (ko) * 2011-01-26 2012-09-10 엘지이노텍 주식회사 발광 소자 및 그 제조방법
RU2479070C2 (ru) * 2011-02-03 2013-04-10 Государственное образовательное учреждение высшего профессионального образования "Российский университет дружбы народов" (РУДН) Светодиодный источник света
US8143147B1 (en) 2011-02-10 2012-03-27 Intermolecular, Inc. Methods and systems for forming thin films
US20120267658A1 (en) * 2011-04-20 2012-10-25 Invenlux Limited Large-area light-emitting device and method for fabricating the same
US9419182B2 (en) 2012-01-05 2016-08-16 Micron Technology, Inc. Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
RU2512742C1 (ru) * 2012-12-06 2014-04-10 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Биполярный транзистор
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US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
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WO2019180513A1 (fr) * 2018-03-19 2019-09-26 King Abdullah University Of Science And Technology Dispositifs optoélectroniques de nitrure iii et procédé de production
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KR20200049026A (ko) * 2018-10-31 2020-05-08 엘지이노텍 주식회사 표면발광 레이저소자 및 이를 포함하는 발광장치
US20210074880A1 (en) * 2018-12-18 2021-03-11 Bolb Inc. Light-output-power self-awareness light-emitting device
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
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CN114204414A (zh) * 2021-11-16 2022-03-18 深圳市德明利光电有限公司 一种光学路径可控高导热、低电阻的vcsel制作方法及vcsel
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Also Published As

Publication number Publication date
US20090020768A1 (en) 2009-01-22
RU2394305C2 (ru) 2010-07-10
CA2638191A1 (fr) 2009-01-20
TW200915476A (en) 2009-04-01
EP2017884A2 (fr) 2009-01-21
ZA200806479B (en) 2009-04-29
RU2008129818A (ru) 2010-01-27
CN101604665A (zh) 2009-12-16
KR20090009761A (ko) 2009-01-23
AU2008203209A1 (en) 2009-02-05
EP2017884A3 (fr) 2011-03-23
JP2009044149A (ja) 2009-02-26
BRPI0805314A2 (pt) 2009-07-28

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