SG146566A1 - Gas flow diffuser - Google Patents

Gas flow diffuser

Info

Publication number
SG146566A1
SG146566A1 SG200802091-9A SG2008020919A SG146566A1 SG 146566 A1 SG146566 A1 SG 146566A1 SG 2008020919 A SG2008020919 A SG 2008020919A SG 146566 A1 SG146566 A1 SG 146566A1
Authority
SG
Singapore
Prior art keywords
substrate
gas
processing
processing chamber
gas flow
Prior art date
Application number
SG200802091-9A
Other languages
English (en)
Inventor
Paul Brillhart
Daniel J Hoffman
James D Carducci
Xiaoping Zhou
Matthew L Miller
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG146566A1 publication Critical patent/SG146566A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85938—Non-valved flow dividers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG200802091-9A 2007-03-21 2008-03-14 Gas flow diffuser SG146566A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/689,031 US8123902B2 (en) 2007-03-21 2007-03-21 Gas flow diffuser

Publications (1)

Publication Number Publication Date
SG146566A1 true SG146566A1 (en) 2008-10-30

Family

ID=39577580

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200802091-9A SG146566A1 (en) 2007-03-21 2008-03-14 Gas flow diffuser

Country Status (7)

Country Link
US (1) US8123902B2 (ko)
EP (1) EP1973146A2 (ko)
JP (1) JP5344832B2 (ko)
KR (1) KR100978690B1 (ko)
CN (1) CN101308771B (ko)
SG (1) SG146566A1 (ko)
TW (1) TWI401367B (ko)

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KR101349266B1 (ko) * 2009-01-09 2014-01-10 가부시키가이샤 아루박 플라즈마 처리 장치 및 마이크로 크리스탈 실리콘의 성막 방법
US8382939B2 (en) * 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
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TWI394986B (zh) * 2009-11-09 2013-05-01 Global Material Science Co Ltd 擴散板結構及其製作方法
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9184028B2 (en) * 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
CN103348446B (zh) 2011-02-09 2016-08-24 应用材料公司 用于rf pvd腔室且能均匀调整的esc接地套件
TWI560801B (en) * 2011-09-30 2016-12-01 Applied Materials Inc Electrostatic chuck with temperature control
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
JP5929429B2 (ja) * 2012-03-30 2016-06-08 東京エレクトロン株式会社 成膜装置
US10232324B2 (en) * 2012-07-12 2019-03-19 Applied Materials, Inc. Gas mixing apparatus
TW201437423A (zh) * 2013-02-21 2014-10-01 Applied Materials Inc 用於注射器至基板的空隙控制之裝置及方法
JP6503730B2 (ja) * 2014-12-22 2019-04-24 東京エレクトロン株式会社 成膜装置
CN105789008B (zh) * 2014-12-22 2017-12-19 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体刻蚀方法
US10167552B2 (en) * 2015-02-05 2019-01-01 Lam Research Ag Spin chuck with rotating gas showerhead
US10049862B2 (en) * 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
JP2016156094A (ja) * 2016-04-28 2016-09-01 東京エレクトロン株式会社 成膜装置
JP6308318B2 (ja) * 2017-04-06 2018-04-11 東京エレクトロン株式会社 成膜装置
WO2020131214A1 (en) 2018-12-20 2020-06-25 Applied Materials, Inc. Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber
CN109817554B (zh) * 2019-01-31 2020-12-25 武汉华星光电半导体显示技术有限公司 一种气体扩散器
CN112585726B (zh) * 2019-07-29 2023-07-14 株式会社日立高新技术 等离子处理装置
DE102020123076A1 (de) * 2020-09-03 2022-03-03 Aixtron Se Gaseinlassorgan eines CVD-Reaktors mit zwei Einspeisestellen

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Also Published As

Publication number Publication date
KR100978690B1 (ko) 2010-08-30
KR20080086361A (ko) 2008-09-25
CN101308771A (zh) 2008-11-19
JP5344832B2 (ja) 2013-11-20
TWI401367B (zh) 2013-07-11
US20080230518A1 (en) 2008-09-25
EP1973146A2 (en) 2008-09-24
TW200844341A (en) 2008-11-16
US8123902B2 (en) 2012-02-28
CN101308771B (zh) 2010-06-23
JP2008277773A (ja) 2008-11-13

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