SG143238A1 - Structure and process for wl-csp with metal cover - Google Patents

Structure and process for wl-csp with metal cover

Info

Publication number
SG143238A1
SG143238A1 SG200718437-7A SG2007184377A SG143238A1 SG 143238 A1 SG143238 A1 SG 143238A1 SG 2007184377 A SG2007184377 A SG 2007184377A SG 143238 A1 SG143238 A1 SG 143238A1
Authority
SG
Singapore
Prior art keywords
metal cover
csp
wafer
package
cavity
Prior art date
Application number
SG200718437-7A
Other languages
English (en)
Inventor
Wen-Kun Yang
Original Assignee
Advanced Chip Eng Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Chip Eng Tech Inc filed Critical Advanced Chip Eng Tech Inc
Publication of SG143238A1 publication Critical patent/SG143238A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02377—Fan-in arrangement
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
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    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2924/102—Material of the semiconductor or solid state bodies
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dicing (AREA)
SG200718437-7A 2006-12-07 2007-12-07 Structure and process for wl-csp with metal cover SG143238A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/567,795 US7468544B2 (en) 2006-12-07 2006-12-07 Structure and process for WL-CSP with metal cover

Publications (1)

Publication Number Publication Date
SG143238A1 true SG143238A1 (en) 2008-06-27

Family

ID=39363415

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200718437-7A SG143238A1 (en) 2006-12-07 2007-12-07 Structure and process for wl-csp with metal cover

Country Status (7)

Country Link
US (1) US7468544B2 (ko)
JP (1) JP2008177548A (ko)
KR (1) KR20080052496A (ko)
CN (1) CN101197336A (ko)
DE (1) DE102007059181A1 (ko)
SG (1) SG143238A1 (ko)
TW (1) TWI358803B (ko)

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US8629532B2 (en) * 2007-05-08 2014-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
US7932179B2 (en) * 2007-07-27 2011-04-26 Micron Technology, Inc. Method for fabricating semiconductor device having backside redistribution layers
CN101807511B (zh) * 2009-02-13 2012-03-28 万国半导体股份有限公司 激光标识晶片水平芯片级封装的方法
CN102097404B (zh) * 2009-12-10 2013-09-11 万国半导体有限公司 低衬底电阻的晶圆级芯片尺寸封装及其制造方法
CN102034721B (zh) * 2010-11-05 2013-07-10 南通富士通微电子股份有限公司 芯片封装方法
CN102034720B (zh) * 2010-11-05 2013-05-15 南通富士通微电子股份有限公司 芯片封装方法
CN102130026B (zh) * 2010-12-23 2012-06-27 中国科学院半导体研究所 基于金锡合金键合的圆片级低温封装方法
WO2012100720A1 (zh) * 2011-01-30 2012-08-02 南通富士通微电子股份有限公司 封装方法
CN102683226A (zh) * 2011-03-14 2012-09-19 SKLink株式会社 晶圆级封装结构及其制造方法
TWI505413B (zh) * 2011-07-20 2015-10-21 Xintec Inc 晶片封裝體及其製造方法
US8963282B2 (en) * 2011-09-14 2015-02-24 Nanya Technology Corp. Crack stop structure and method for forming the same
US9257392B2 (en) * 2012-04-11 2016-02-09 Mediatek Inc. Semiconductor package with through silicon via interconnect
US20150001713A1 (en) * 2013-06-29 2015-01-01 Edmund Goetz Multiple level redistribution layer for multiple chip integration
US9418877B2 (en) * 2014-05-05 2016-08-16 Qualcomm Incorporated Integrated device comprising high density interconnects in inorganic layers and redistribution layers in organic layers
CN105374773A (zh) * 2014-08-25 2016-03-02 万国半导体股份有限公司 Mcsp功率半导体器件及制备方法
CN104362102A (zh) * 2014-09-28 2015-02-18 南通富士通微电子股份有限公司 晶圆级芯片规模封装工艺
CN104299949A (zh) * 2014-09-28 2015-01-21 南通富士通微电子股份有限公司 晶圆级芯片封装结构
CN105778644B (zh) * 2014-12-15 2019-01-29 碁達科技股份有限公司 雷射切割用保护膜组成物及应用
JP2017162876A (ja) * 2016-03-07 2017-09-14 株式会社ジェイデバイス 半導体パッケージの製造方法
US20190131247A1 (en) * 2017-10-31 2019-05-02 Microchip Technology Incorporated Semiconductor Wafer Cutting Using A Polymer Coating To Reduce Physical Damage
TWI683415B (zh) * 2018-09-28 2020-01-21 典琦科技股份有限公司 晶片封裝體的製造方法
CN110970362B (zh) * 2018-09-28 2022-06-07 典琦科技股份有限公司 芯片封装体的制造方法
CN111653528A (zh) * 2020-07-22 2020-09-11 江苏长晶科技有限公司 芯片封装结构、方法和半导体器件

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JPH10135270A (ja) * 1996-10-31 1998-05-22 Casio Comput Co Ltd 半導体装置及びその製造方法
US6184573B1 (en) * 1999-05-13 2001-02-06 Siliconware Precision Industries Co., Ltd. Chip packaging
US6607941B2 (en) * 2002-01-11 2003-08-19 National Semiconductor Corporation Process and structure improvements to shellcase style packaging technology
TWI227550B (en) * 2002-10-30 2005-02-01 Sanyo Electric Co Semiconductor device manufacturing method
TWI229890B (en) * 2003-04-24 2005-03-21 Sanyo Electric Co Semiconductor device and method of manufacturing same
JP4222092B2 (ja) * 2003-05-07 2009-02-12 富士電機デバイステクノロジー株式会社 半導体ウェハ、半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
US20080136026A1 (en) 2008-06-12
JP2008177548A (ja) 2008-07-31
DE102007059181A1 (de) 2008-06-12
CN101197336A (zh) 2008-06-11
TW200828544A (en) 2008-07-01
US7468544B2 (en) 2008-12-23
KR20080052496A (ko) 2008-06-11
TWI358803B (en) 2012-02-21

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