SG141386A1 - Method and apparatus for performing model-based opc for pattern decomposed features - Google Patents

Method and apparatus for performing model-based opc for pattern decomposed features

Info

Publication number
SG141386A1
SG141386A1 SG200708778-6A SG2007087786A SG141386A1 SG 141386 A1 SG141386 A1 SG 141386A1 SG 2007087786 A SG2007087786 A SG 2007087786A SG 141386 A1 SG141386 A1 SG 141386A1
Authority
SG
Singapore
Prior art keywords
pattern
features
error
modified
based opc
Prior art date
Application number
SG200708778-6A
Other languages
English (en)
Inventor
Duan-Fu Stephen Hsu
Jung Chul Park
Douglas Van Den Broeke
Jang Fung Chen
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG141386A1 publication Critical patent/SG141386A1/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
SG200708778-6A 2006-09-13 2007-09-13 Method and apparatus for performing model-based opc for pattern decomposed features SG141386A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84407406P 2006-09-13 2006-09-13

Publications (1)

Publication Number Publication Date
SG141386A1 true SG141386A1 (en) 2008-04-28

Family

ID=38870358

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200708778-6A SG141386A1 (en) 2006-09-13 2007-09-13 Method and apparatus for performing model-based opc for pattern decomposed features

Country Status (7)

Country Link
US (3) US8111921B2 (fr)
EP (1) EP1901122B1 (fr)
JP (1) JP4922112B2 (fr)
KR (1) KR100882260B1 (fr)
CN (1) CN101276141B (fr)
SG (1) SG141386A1 (fr)
TW (1) TWI382282B (fr)

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KR102274837B1 (ko) 2014-09-04 2021-07-08 삼성전자주식회사 쿼드러플 패터닝 기술 공정을 위한 레이아웃 분리 방법 및 이를 사용한 반도체 장치 제조 방법
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Also Published As

Publication number Publication date
KR100882260B1 (ko) 2009-02-06
TW200821768A (en) 2008-05-16
CN101276141B (zh) 2011-04-13
US20080069432A1 (en) 2008-03-20
EP1901122A3 (fr) 2011-12-21
EP1901122A2 (fr) 2008-03-19
JP2008096991A (ja) 2008-04-24
US20120122023A1 (en) 2012-05-17
EP1901122B1 (fr) 2014-05-07
KR20080024457A (ko) 2008-03-18
US8391605B2 (en) 2013-03-05
TWI382282B (zh) 2013-01-11
US8111921B2 (en) 2012-02-07
CN101276141A (zh) 2008-10-01
US20130182940A1 (en) 2013-07-18
JP4922112B2 (ja) 2012-04-25
US8644589B2 (en) 2014-02-04

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