SG136099A1 - Method of producing simox wafer - Google Patents

Method of producing simox wafer

Info

Publication number
SG136099A1
SG136099A1 SG200702274-2A SG2007022742A SG136099A1 SG 136099 A1 SG136099 A1 SG 136099A1 SG 2007022742 A SG2007022742 A SG 2007022742A SG 136099 A1 SG136099 A1 SG 136099A1
Authority
SG
Singapore
Prior art keywords
simox wafer
producing
producing simox
wafer
simox
Prior art date
Application number
SG200702274-2A
Other languages
English (en)
Inventor
Yoshio Murakami
Tetsuya Nakai
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of SG136099A1 publication Critical patent/SG136099A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
SG200702274-2A 2006-03-27 2007-03-27 Method of producing simox wafer SG136099A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006085340A JP5157075B2 (ja) 2006-03-27 2006-03-27 Ｓｉｍｏｘウェーハの製造方法

Publications (1)

Publication Number Publication Date
SG136099A1 true SG136099A1 (en) 2007-10-29

Family

ID=38197993

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200702274-2A SG136099A1 (en) 2006-03-27 2007-03-27 Method of producing simox wafer
SG200906432-0A SG155989A1 (en) 2006-03-27 2007-03-27 Method of producing simox wafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200906432-0A SG155989A1 (en) 2006-03-27 2007-03-27 Method of producing simox wafer

Country Status (6)

Country Link
US (1) US20070224773A1 (ja)
EP (1) EP1840957A1 (ja)
JP (1) JP5157075B2 (ja)
KR (1) KR100878732B1 (ja)
SG (2) SG136099A1 (ja)
TW (1) TWI345286B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8778717B2 (en) 2010-03-17 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Local oxidation of silicon processes with reduced lateral oxidation
US8858818B2 (en) * 2010-09-30 2014-10-14 Suvolta, Inc. Method for minimizing defects in a semiconductor substrate due to ion implantation
US8778786B1 (en) 2012-05-29 2014-07-15 Suvolta, Inc. Method for substrate preservation during transistor fabrication
JP6502198B2 (ja) * 2015-07-02 2019-04-17 東京エレクトロン株式会社 基板処理方法および記憶媒体

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528018A1 (fr) * 1982-06-07 1983-12-09 Cuir Sa Taquets de positionnement de produits en feuille
US4786608A (en) * 1986-12-30 1988-11-22 Harris Corp. Technique for forming electric field shielding layer in oxygen-implanted silicon substrate
JPH04737A (ja) * 1990-04-17 1992-01-06 Fujitsu Ltd 半導体装置の製造方法
US5364800A (en) * 1993-06-24 1994-11-15 Texas Instruments Incorporated Varying the thickness of the surface silicon layer in a silicon-on-insulator substrate
JPH07193204A (ja) * 1993-12-27 1995-07-28 Nippon Steel Corp 半導体基板の製造方法
JP3036619B2 (ja) * 1994-03-23 2000-04-24 コマツ電子金属株式会社 Ｓｏｉ基板の製造方法およびｓｏｉ基板
JPH07335906A (ja) * 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
KR0143344B1 (ko) * 1994-11-02 1998-08-17 김주용 온도의 변화에 대하여 보상 기능이 있는 기준전압 발생기
JPH1041241A (ja) * 1996-07-26 1998-02-13 Sharp Corp 半導体装置の製造方法
US5930643A (en) * 1997-12-22 1999-07-27 International Business Machines Corporation Defect induced buried oxide (DIBOX) for throughput SOI
JP3762144B2 (ja) * 1998-06-18 2006-04-05 キヤノン株式会社 Ｓｏｉ基板の作製方法
US20010038153A1 (en) * 2000-01-07 2001-11-08 Kiyofumi Sakaguchi Semiconductor substrate and process for its production

Also Published As

Publication number Publication date
JP2007266055A (ja) 2007-10-11
EP1840957A1 (en) 2007-10-03
TW200802694A (en) 2008-01-01
TWI345286B (en) 2011-07-11
JP5157075B2 (ja) 2013-03-06
KR20070096976A (ko) 2007-10-02
US20070224773A1 (en) 2007-09-27
SG155989A1 (en) 2009-10-29
KR100878732B1 (ko) 2009-01-14

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