EP2033739A4 - Method for producing wafer - Google Patents

Method for producing wafer

Info

Publication number
EP2033739A4
EP2033739A4 EP07743143A EP07743143A EP2033739A4 EP 2033739 A4 EP2033739 A4 EP 2033739A4 EP 07743143 A EP07743143 A EP 07743143A EP 07743143 A EP07743143 A EP 07743143A EP 2033739 A4 EP2033739 A4 EP 2033739A4
Authority
EP
European Patent Office
Prior art keywords
producing wafer
wafer
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07743143A
Other languages
German (de)
French (fr)
Other versions
EP2033739B1 (en
EP2033739A1 (en
Inventor
Tadahiro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP2033739A1 publication Critical patent/EP2033739A1/en
Publication of EP2033739A4 publication Critical patent/EP2033739A4/en
Application granted granted Critical
Publication of EP2033739B1 publication Critical patent/EP2033739B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/18—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the presence of dressing tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
EP07743143A 2006-06-08 2007-05-11 Wafer production method Active EP2033739B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006159988A JP4915146B2 (en) 2006-06-08 2006-06-08 Wafer manufacturing method
PCT/JP2007/059708 WO2007141990A1 (en) 2006-06-08 2007-05-11 Method for producing wafer

Publications (3)

Publication Number Publication Date
EP2033739A1 EP2033739A1 (en) 2009-03-11
EP2033739A4 true EP2033739A4 (en) 2010-09-01
EP2033739B1 EP2033739B1 (en) 2011-09-21

Family

ID=38801255

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07743143A Active EP2033739B1 (en) 2006-06-08 2007-05-11 Wafer production method

Country Status (5)

Country Link
US (1) US8231430B2 (en)
EP (1) EP2033739B1 (en)
JP (1) JP4915146B2 (en)
KR (1) KR101333189B1 (en)
WO (1) WO2007141990A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006037267B4 (en) * 2006-08-09 2010-12-09 Siltronic Ag Process for the production of semiconductor wafers with high-precision edge profile
US20090142916A1 (en) * 2007-11-29 2009-06-04 Qimonda Ag Apparatus and method of manufacturing an integrated circuit
JP2009283650A (en) * 2008-05-22 2009-12-03 Sumco Corp Method for regenerating semiconductor wafer
JP5521582B2 (en) 2010-01-28 2014-06-18 信越半導体株式会社 Manufacturing method of bonded wafer
DE102011076954A1 (en) 2011-06-06 2012-03-15 Siltronic Ag Method for manufacturing single-sided polished semiconductor wafer, involves implementing oxidation separation on rear side of semiconductor wafer, and polishing and cleaning front side of semiconductor wafer
JP2013008769A (en) * 2011-06-23 2013-01-10 Sumitomo Electric Ind Ltd Production method of silicon carbide substrate
US9718164B2 (en) 2012-12-06 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing system and polishing method
KR101452250B1 (en) * 2013-05-28 2014-10-22 코닝정밀소재 주식회사 Method and appratus of symmetrically chamfering a substrate
JP6280355B2 (en) * 2013-11-29 2018-02-14 Hoya株式会社 Manufacturing method of magnetic disk substrate and carrier for polishing treatment
JP2015140270A (en) * 2014-01-28 2015-08-03 グローバルウェーハズ・ジャパン株式会社 silicon wafer
JP6750592B2 (en) * 2017-08-15 2020-09-02 信越半導体株式会社 Method and apparatus for evaluating edge shape of silicon wafer, silicon wafer, and method for selecting and manufacturing the same
JP6939752B2 (en) * 2018-11-19 2021-09-22 株式会社Sumco Helical chamfering method for silicon wafers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2921250B2 (en) * 1992-02-28 1999-07-19 信越半導体株式会社 Mirror polishing method and apparatus for wafer chamfer
JPH08243891A (en) * 1995-03-07 1996-09-24 Kao Corp Chamfer work device for substrate
JPH0919857A (en) * 1995-07-10 1997-01-21 Toyo A Tec Kk Chamfering method and device for wafer cut-out by slicing device and grinding wheel for chamfering
JP3658454B2 (en) * 1996-03-29 2005-06-08 コマツ電子金属株式会社 Manufacturing method of semiconductor wafer
ES2183181T3 (en) * 1996-06-15 2003-03-16 Unova Uk Ltd INSPECTION AND HANDLING OF WORK PIECES.
JPH11219923A (en) * 1998-02-03 1999-08-10 Hitachi Ltd Semiconductor wafer and manufacture of the same, and manufacture of semiconductor device
JP3026282B2 (en) * 1998-07-01 2000-03-27 株式会社東京精密 Wafer chamfering equipment
JP2000084811A (en) 1998-09-16 2000-03-28 Tokyo Seimitsu Co Ltd Wafer chamfering device
US6884154B2 (en) 2000-02-23 2005-04-26 Shin-Etsu Handotai Co., Ltd. Method for apparatus for polishing outer peripheral chamfered part of wafer
JP2003142434A (en) 2001-10-30 2003-05-16 Shin Etsu Handotai Co Ltd Method of manufacturing mirror-surface wafer
JP2004214398A (en) 2002-12-27 2004-07-29 Sumitomo Mitsubishi Silicon Corp Method of manufacturing semiconductor wafer
JP2004243422A (en) * 2003-02-12 2004-09-02 Komatsu Electronic Metals Co Ltd Circumference grinding united wheel
JP2004356230A (en) 2003-05-27 2004-12-16 Matsushita Electric Works Ltd Light emitting device and its manufacturing method
JP4441823B2 (en) 2003-11-26 2010-03-31 株式会社東京精密 Truing method and chamfering device for chamfering grindstone

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *

Also Published As

Publication number Publication date
EP2033739B1 (en) 2011-09-21
WO2007141990A1 (en) 2007-12-13
JP2007326191A (en) 2007-12-20
US8231430B2 (en) 2012-07-31
KR20090018621A (en) 2009-02-20
US20090170406A1 (en) 2009-07-02
JP4915146B2 (en) 2012-04-11
EP2033739A1 (en) 2009-03-11
KR101333189B1 (en) 2013-11-26

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