JP2000084811A - Wafer chamfering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer chamfering device capable of measuring an outline, a flaw, and a chip of a wafer on a machine. SOLUTION: A subsequent measuring device 48 for measuring a flaw, etc., on a chamfered surface and an outline of a wafer W by image processing is incorporated on a device body. The subsequent measuring device 48 measures a flaw, etc., and an outline of the chamfered wafer W.A good wafer W is collected in a wafer cassette 30 and a defective wafer WX is recovered in a defective wafer recovery cassette 124.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer chamfering apparatus, and more particularly to a wafer chamfering apparatus for chamfering a wafer such as silicon as a material of a semiconductor device.

[0002]

2. Description of the Related Art A wafer such as silicon, which is used as a material for a semiconductor device, is thinly sliced from a state of an ingot by a cutting machine such as a slicing machine, and then a peripheral edge is chamfered by a wafer chamfering device to prevent cracking and chipping. Is done. Wafers to be chamfered by this wafer chamfering device have a predetermined standard, and the wafer chamfering device
Wafer chamfering is performed by setting processing conditions so as to conform to the standard.

However, even when the processing conditions are accurately set, the wafer is not always chamfered according to the standard, and may be out of the standard due to the degree of abrasion of the grindstone or the supply of the grinding fluid. May be processed. For this reason, usually, the outer shape of the chamfered wafer is measured to check whether the wafer is chamfered according to the standard. Conventionally, the inspection after the chamfering process has been carried out by the operator one by one or by sampling in a transport to an inspection unit provided separately from the wafer chamfering apparatus.

[0004] In addition, the chamfering of the wafer may cause scratches or chips on the chamfered surface, and the wafer with such scratches or chips becomes defective.
It is necessary to remove it before supplying it to the subsequent processing device. For this reason, the wafer is usually chamfered and then inspected for any scratches or chips on the chamfered surface. Conventionally, this inspection is performed by an operator visually or by using a scope one by one or by sampling.

[0005]

However, in the conventional method in which a wafer is separately transported to an inspection section after processing to measure the outer shape of the wafer or to perform a defect inspection, the production efficiency is poor and the burden on the operator is great. There was a disadvantage. The present invention has been made in view of such circumstances,
It is an object of the present invention to provide a wafer chamfering apparatus capable of measuring the outer shape of a wafer, measuring the cross-sectional shape of an outer peripheral portion, and measuring the presence or absence of a flaw or chip on a machine.

[0006]

According to a first aspect of the present invention, there is provided a processing section for chamfering a wafer, a supply section for supplying a wafer to the processing section, and a chamfering process for the processing section. A wafer chamfering apparatus comprising: a detection unit that detects a scratch generated on a chamfered surface of a processed wafer, a chip; and a collection unit that collects a wafer that has been detected by the detection unit. Is a measurement table that holds and rotates the wafer, and an imaging unit that captures an image of the chamfered surface of the rotating wafer held by the measurement table,
Image data processing means for detecting a scratch or chip on the chamfered surface of the wafer based on image data obtained by the imaging means.

According to the present invention, a detection unit installed on the machine detects a scratch or chip on a chamfered surface of a wafer by image processing. This saves the trouble of transporting the wafer to the inspection unit after the processing and inspecting the wafer separately, thereby improving the production efficiency. In order to achieve the above object, the invention according to claim 5 includes a processing section for chamfering a wafer, a supply section for supplying the wafer to the processing section, and an outer shape of the wafer chamfered by the processing section. A wafer chamfering apparatus comprising: a measuring unit for measuring, and a collecting unit for collecting a wafer which has been measured by the measuring unit, wherein the measuring unit includes a measuring table that holds and rotates a wafer; and the measuring unit. An imaging unit that is installed at a position separated by a predetermined distance from the rotation center of the table and that captures an outer peripheral portion of the rotating wafer held by the measurement table from a direction along the axis of the wafer, Image data processing means for measuring the outer shape of the wafer based on the obtained image data.

According to the present invention, the outer shape of a wafer is measured by image processing in a measuring unit installed on the machine. This saves the trouble of separately transporting the wafer to the inspection unit after the processing and performing the measurement, thereby improving the production efficiency. According to a fifth aspect of the present invention, there is provided a processing unit for chamfering a wafer, a supply unit for supplying the wafer to the processing unit, and an outer peripheral portion of the wafer chamfered by the processing unit. A measuring unit for measuring the cross-sectional shape, and a collecting unit for collecting a wafer that has been measured by the measuring unit, a wafer chamfering apparatus, wherein the measuring unit is a measuring table that holds and rotates the wafer and An imaging unit that is installed at a predetermined distance from a rotation center of the measurement table and that captures an outer peripheral portion of a rotating wafer held by the measurement table from a direction orthogonal to an axis of the wafer; Image data processing means for measuring the outer peripheral cross-sectional shape of the wafer based on image data obtained by imaging by means,
It is characterized by consisting of.

According to the present invention, the outer peripheral cross-sectional shape of the wafer is measured by image processing in the measuring unit installed on the machine. This saves the trouble of separately transporting the wafer to the inspection unit after the processing and performing the measurement, thereby improving the production efficiency.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a wafer chamfering apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing an entire configuration of a first embodiment of a wafer chamfering apparatus according to the present invention.
Is a perspective view thereof.

As shown in FIGS. 1 and 2, a wafer chamfering apparatus 10 according to a first embodiment includes a supply / recovery section 12, a measurement / transport section 14, a measurement section 16, a processing section 18, a cleaning section 20,
It comprises a processing / transporting section 22, a defective wafer collecting section 24, and a master wafer storing section 26. First, the configuration of the supply and recovery unit 12 will be described. In the supply / recovery section 12, the wafer W to be chamfered is placed in the wafer cassette 30.
And collects the chamfered wafer W in the wafer cassette 30. As shown in FIG. 1, the wafer supply / recovery section 12 includes four cassette tables 32, 32,... And one supply / recovery robot.

The four cassette tables 32, 32,...
Are arranged in series, and this cassette table 3
The wafer cassettes 30, 30,... Are set on 2, 32,. The supply / recovery robot 34 is provided for each of the wafer cassettes 3 set on the cassette tables 32, 32,.
The wafers W are taken out one by one from the measurement transport unit 14
And the chamfered wafer W is stored in the wafer cassette 30 from the measuring and transporting unit 14.

The transfer arm 3 of the supply and recovery robot 34
Numeral 6 has a suction pad (not shown) on the upper surface portion, and the suction pad holds the wafer W by vacuum-sucking the lower surface of the wafer W. The transfer arm 36 of the supply / recovery robot 34 moves back and forth on the turntable 38, turns as the turntable 38 rotates, and moves up and down as the turntable 38 moves up and down. Further, the transfer arm 36 of the supply / recovery robot 34 slides the turntable 38 in the Y direction in FIG.
32, slide along. That is, the transfer arm 36 of the supply / recovery robot 34 can move back and forth, right and left, up and down, and turn while holding the wafer W.
Is carried.

Next, the configuration of the measurement and transport section 14 will be described. The measuring and transporting unit 14 includes the supply and recovery unit 12 and the measuring unit 16
, The wafer W is transferred between the processing transfer unit 22 and the measuring unit 16 and between the defective wafer collecting unit 24 and the measuring unit 16. The measurement transport section 14 is provided with a measurement transport robot 40. Measurement transport robot 40
Has a pair of upper and lower transfer arms 42A and 42B, and each of the transfer arms 42A and 42B has a suction pad (not shown) on its upper surface. Each of the transfer arms 42A and 42B holds the wafer W by vacuum-sucking the lower surface of the wafer W with the suction pad. The transfer arms 42A and 42B of the measurement transfer robot 40
Moves forward and backward on the turntable 44, turns as the turntable 44 rotates, and moves up and down as the turntable 44 moves up and down. That is, the transfer arm 42 of the measurement transfer robot 40
A and 42B move back and forth while holding the wafer W,
The wafer W can be moved up and down and turned, and the wafer W is transferred by combining these operations. In the following description, the upper transfer arm 42A will be referred to as a “first transfer arm 42A” and the lower transfer arm 42B as necessary.
Is referred to as a “second transfer arm 42B”.

Next, the configuration of the measuring section 16 will be described. The measurement unit 16 performs pre-measurement of the chamfered wafer W and post-measurement of the chamfered wafer W. The measuring section 16 includes a front measuring device 46 and a rear measuring device 48. Note that the rear measuring device 48 is installed above the front measuring device 46, and therefore only the rear measuring device 48 is shown in FIG.

The pre-measuring device 46 comprises a measuring table 50, a pre-centering sensor 52, a thickness sensor 54, a pre-alignment sensor 56 and a fine alignment sensor 58, as shown in FIG. The measurement table 50 is configured to be rotatable and vertically movable, and rotates while suction-holding the back surface of the wafer W. The pre-centering sensor 52 measures the approximate center position of the wafer W transferred to the measurement table 50 by the measurement transfer robot 40. The thickness sensor 54 measures the thickness of the wafer W. The pre-alignment sensor 56 detects the approximate position of a notch or orientation flat formed on the outer periphery of the wafer W. The fine alignment sensor 58 measures the diameter, center position, notch position, and notch depth of the notched wafer W. Also, A of wafer W with orientation flat
The diameter, B diameter, center position and orientation flat position are measured.

The pre-measurement device 46 configured as described above performs pre-measurement of the wafer W as follows. Upon receiving the wafer W from the supply / recovery unit 12, the measurement transfer robot 40 of the measurement transfer unit 14 transfers the wafer W to the thickness sensor 54. During this transfer process, the wafer W passes through the pre-centering sensor 52, whereby the approximate center position of the wafer W is measured. Then, the transfer arm 42 is determined based on the measured approximate center position information.
The movement of A and 42B is controlled, and the center of the wafer W is located at the measurement position of the thickness sensor 54. The thickness sensor 54 is
The thickness of the central portion of the wafer W is measured.

When the measurement of the center thickness is completed, the transfer arms 42A and 42B are retracted by a predetermined amount. As a result, the center of the wafer W substantially matches the center of the measurement table 50. After transferring the wafer W to the measurement table 50, the transfer arms 42A and 42B retract by a predetermined amount and
Evacuate from above. The measurement table 50 that has received the wafer W rotates the wafer W at a predetermined rotation speed. When the rotation is stabilized, the pre-alignment sensor 56 measures the approximate position of the notch of the wafer W (or the approximate position of the orientation flat in the case of the wafer W with the orientation flat).

At the same time, the fine alignment sensor 58 measures the diameter of the wafer W to accurately determine the center position of the wafer W (the wafer W with orientation flat).
In the case of (1), the center position of the wafer W is accurately obtained by measuring the diameter A. ). Further, since the outer periphery of the wafer W held on the measurement table 50 is located at the measurement position of the thickness sensor 54, the thickness sensor 54
Measure the thickness of the outer peripheral part of.

When each of the above measurements is completed, the rotation of the measurement table 50 stops. Then, based on the measurement result of the pre-alignment sensor 56, the measurement table 50 is rotated by a predetermined amount, and the notch is moved to a predetermined notch measurement position (in the case of the wafer W with an orientation flat, the orientation flat is moved to the predetermined orientation flat measurement position. Moving.). When the notch is located at the notch measurement position, the measurement table 50 slowly rotates the wafer W. And the rotating wafer W
In contrast, the fine alignment sensor 58 accurately measures the notch position and the notch depth (in the case of the wafer W with the orientation flat, the orientation flat position and the B diameter are accurately measured).

Through the above series of steps, the pre-measurement of the wafer W by the pre-measurement device 46 is completed. As shown in FIGS. 2 and 3, the rear measurement device 48 includes a measurement table 60, a first camera 62A, a second camera 62B, a first transmitted illumination device 64A, a second transmitted illumination device 64B, and a first reflected illumination device 66A. , A second reflected illumination device 66B, and an image data processing device 68.

The measurement table 60 holds the back surface of the wafer W by vacuum suction, and rotates and moves up and down. The first camera 62 </ b> A moves the wafer W held on the measurement table 60.
The second camera 62 </ b> B captures an image of the rear edge of the wafer W held on the measurement table 60. The first camera 62A and the second camera 62B are installed on a straight line passing through the rotation center of the measurement table 60, and are installed at the same distance from the rotation center of the measurement table 60.

The first transmitted illumination device 64A is provided with a first camera 6
It is installed so as to face 2A, and irradiates transmitted light from the back side of the wafer W to the first camera 62A.
On the other hand, the second transmitted illumination device 64B is installed so as to face the second camera 62B, and emits transmitted light from the front side of the wafer W toward the second camera 62B. The first reflected illumination device 66A irradiates reflected light toward a chamfered surface on the back surface side of the wafer W captured by the first camera 62A. On the other hand, the second reflected illumination device 66B is
The reflected light is emitted toward the chamfered surface on the front side of the wafer W to be imaged on B.

The image data processing device 68 includes the first camera 6
2A, the outer shape of the wafer is measured based on image data obtained by imaging with the second camera 62B, and the presence or absence of scratches or chips on the chamfered surface is detected. The rear measuring device 48 is configured as described above. A specific measuring method will be described later in detail.

Next, the configuration of the processing section 18 will be described. The processing unit 18 performs chamfering of the wafer W. As shown in FIGS. 1, 2, 4, and 5, the processing unit 18 includes a wafer feeding device 70, an outer peripheral grinding device 72, and a notch grinding device 74. The wafer feeder 70 has a grinding table 76 for sucking and holding the wafer W. The grinding table 76 is driven by a driving unit (not shown) to move in a front-rear direction (Y-axis direction) and a left-right direction (X-axis direction). And moves in the vertical direction (Z-axis direction), and is driven by a motor (not shown) so that the central axis (θ-axis)
Rotate around.

The outer peripheral grinding device 72 has an outer peripheral spindle 80 which is driven by an outer peripheral motor (not shown) and rotates. An outer peripheral grinding wheel 82 for chamfering the outer periphery of the wafer W is mounted on the outer peripheral spindle 80. The outer peripheral grinding wheel 82 has a groove formed on the outer peripheral surface thereof corresponding to the chamfered shape required for the wafer W (formal grindstone). By pressing the outer periphery or the orientation flat of the wafer W against the groove, the outer periphery or the orientation flat is formed. Is chamfered.

The notch grinding device 74 includes a notch motor 84
The notch spindle 86 is rotated by being driven by a notch. A notch grinding wheel 88 for chamfering a notch of the wafer W is mounted on the notch spindle 86. The notch grinding wheel 88 has a groove corresponding to the chamfering shape required for the notch formed on the outer peripheral surface thereof (form-shaped grinding wheel).
By pressing the notch of the wafer W against this groove,
The notch is chamfered.

In the processing unit 18 configured as described above,
The wafer W is chamfered as follows. The processing method of the wafer W in the case of processing the outer periphery (circular portion) and the processing of the orientation flat portion or the notch portion are different from each other. First, a case where the outer periphery of the wafer W is chamfered will be described.
First, the wafer W is placed on the grinding table 76, and the placed wafer W is suction-held by the grinding table 76. Next, the outer peripheral grinding wheel 82 is rotated at a high speed. next,
The grinding table 76 is moved toward the outer peripheral grinding wheel 82. Since the outer periphery of the wafer W comes into contact with the groove of the outer peripheral grinding wheel 82 by moving the grinding table 76 by a predetermined amount, the movement of the grinding table 76 is stopped at that position. Next, the grinding table 76 is rotated. As a result, the outer periphery of the wafer W is ground by the outer peripheral grinding wheel 82 and chamfered.

Next, a case where the orientation flat OF of the wafer W is chamfered will be described. First, the outer peripheral grinding wheel 8
2 is rotated at high speed. Next, the grinding table 76 is moved toward the outer peripheral grinding wheel 82. As a result, the portion of the orientation flat comes into contact with the groove of the outer peripheral grinding wheel 82, and the movement of the grinding table 76 is stopped at that position. Next, the grinding table 76 is moved along the orientation flat. Thus, the orientation flat of the wafer W is ground by the outer peripheral grinding wheel 82 and chamfered.

Next, a case where the notch of the wafer W is chamfered will be described. First, the notch grinding wheel 88 is rotated at a high speed. Next, the grinding table 76 is moved toward the notch grinding wheel 88. As a result, the notch portion comes into contact with the groove of the notch grinding wheel 88, so that the movement of the grinding table 76 is stopped at that position. Next, the grinding table 76 is moved along the shape of the notch. That is, since the notch is usually formed in a V-shape, the grinding table 76 is moved so as to draw a V-shape. Thus, the notch of the wafer W is ground by the notch grinding wheel 88 and chamfered.

Next, the structure of the cleaning unit 20 will be described. The cleaning unit 20 cleans the chamfered wafer W. The cleaning unit 20 includes a spin cleaning device 90 and a wafer elevating device 92 as shown in FIGS. The spin cleaning device 90 spin-cleans the wafer W. That is, while rotating the wafer W, a cleaning liquid is applied to the surface of the wafer W for cleaning. Wafer W
Is rotated while being sucked and held by the cleaning table 94, and the cleaning liquid is jetted toward the rotating wafer W from a nozzle (not shown).

The wafer elevating device 92 transports the wafer W cleaned by the spin cleaning device 90 to a position at a predetermined height by an elevating arm 96 movable up and down. The elevating arm 96 of the wafer elevating device 92 is provided with a suction pad 98 at a lower end portion thereof, and the suction pad 98 holds the wafer W by vacuum-sucking the upper surface of the wafer W.

Next, the configuration of the processing and conveying section 22 will be described. The processing / conveying section 22 includes a section between the measuring section 16 and the processing section 18, a section between the processing section 18 and the cleaning section 20, and
The wafer W is transferred between the wafer and the measurement transfer unit 14. As shown in FIG. 1, the transport section 22 includes a transfer 100 for supply and a transfer 102 for collection.

The supply transfer 100 includes the measuring unit 1
The wafer W pre-measured by the pre-measuring device 46 is transferred to the grinding table 76 of the processing section 18. The supply transfer 100 includes a supply horizontal slide block 106 that moves along a horizontal guide 104, and a supply transfer arm 108 that is provided on the supply horizontal slide block 106 so as to rotate and move up and down. ing.

The supply transfer arm 108 is provided with a suction pad 110 at the lower end of the tip thereof.
Hold. The transfer for collection 102 is the processing unit 1
The wafer W, which has been chamfered in step 8, is transferred onto the cleaning table 94 of the cleaning unit 20, and the wafer W, which has been cleaned in the cleaning unit 20, is transferred to the measurement transfer robot 4 of the measurement transfer unit 14.
Transport to 0. The collection transfer 102 includes a collection horizontal slide block 112 that moves along the horizontal guide 104 and a collection horizontal slide block 11.
And a transfer arm 116 for recovery provided on the top 2 so as to be movable up and down.

The transfer arm 116 for collection has a first suction pad 118 at the lower end of the tip and a pair of second suction pads 120, 120 at the upper end of the tip. The wafer W that has been chamfered by the processing unit 18 is conveyed onto the cleaning table 94 of the cleaning unit 20 while its upper surface is suction-held by the first suction pad 118. Further, the wafer W cleaned by the cleaning unit 20 is transferred to the measurement transfer robot 40 of the measurement transfer unit 14 by holding the lower surface of the wafer W by the second suction pad 120.

The recovery transfer 116 and the supply transfer 108 are arranged at predetermined intervals in the vertical direction so as not to conflict with each other. Therefore, the first suction pad 1 of the recovery transfer 116
The second suction pad 18 and the second suction pad 120 can be positioned directly below the suction pad 110 of the supply transfer 108.

In the processing / transporting section 22 configured as described above, the transfer arm 108 for supply and the transfer arm 116 for recovery are connected to the “wafer receiving position”, the “processing section delivery position”, `` Standby position ''
Then, the wafer W is transferred by moving between the “cleaning unit delivery position”. The specific transport method will be described later in detail.

Next, the configuration of the defective wafer collecting section 24 will be described. In bad wafer collecting unit 24, to recover the defective wafer W _X based on the measurement results of the post-measuring device 48. The defective wafer collecting section 24 has a cassette table 122 as shown in FIGS. 1 and 2, and a defective wafer collecting cassette 124 is set on the cassette table 122. The wafer W determined as a defective wafer by the post-measurement device 48 is transferred to the measurement transfer robot 40 of the measurement transfer unit 14 and stored in the defective wafer collection cassette 124.

Next, the configuration of the master wafer storage section 26 will be described. Master wafer storage section 26 stores the master wafer W _M to be used in the measurement section 16.
The master wafer storage unit 26 is installed below the defective wafer collection unit 24 and has a master wafer storage cassette (not shown). Master wafer W _M are stored in the master wafer storage cassette.

The operation of the wafer chamfering apparatus 10 according to the first embodiment configured as described above is as follows. In the following description, a case where the notched wafer W is chamfered will be described. As shown in FIG. 1, first, the supply / recovery robot 34 takes out one wafer W from one of the four wafer cassettes 30, 30,.... Supply / recovery robot 34
Transports the removed wafer W to the measurement transfer robot 40
To the second transfer arm 42B. The delivery of the wafer W is performed as follows.

In the initial state, the measuring and transporting robot 40
The transfer arms 42A and 42B are located at predetermined standby positions (FIG. 1).
(The position shown in the figure). When the transfer arm 36 of the supply and recovery robot 34 takes out the wafer W from the wafer cassette 30, the transfer arm 36 moves to a predetermined wafer delivery position (the position shown in FIG. 1). When the transfer arm 36 of the supply and collection robot 34 moves to the wafer transfer position, the transfer arms 42A and 42B of the measurement transfer robot 40 turn by a predetermined amount so as to face the transfer arm 36 of the supply and collection robot 34. Then, the transfer arm 36 of the supply / recovery robot 34 advances by a predetermined amount with respect to the transfer arms 42A and 42B of the turned measurement transfer robot 40, and transfers the wafer W to the second transfer arm 42B of the measurement transfer robot 40.

The transfer arm 36 of the supply / recovery robot 34 that has transferred the wafer W is retracted by a predetermined amount. On the other hand, the transfer arms 42A and 42B of the measurement transfer robot 40 rotate by a predetermined amount and return to the original standby position. Thus, the reception of the wafer W is completed. In this state, the transfer arms 42A and 42B of the measurement transfer robot 40 are positioned so as to face the thickness measurement sensor 54 of the pre-measuring device 46.

The measurement transfer robot 40 that has received the wafer W advances the transfer arms 42A and 42B to transfer the wafer W to the pre-measurement device 46. Then, by passing through the pre-centering sensor 52 in this transfer process, the approximate center position of the wafer W is measured. The wafer W transported to the pre-measuring device 46 firstly receives the thickness sensor 5
4 measures the thickness at the center. Then, after the measurement, it is transferred to the measurement table 50. The transfer arm 42A of the measurement transfer robot 40 that has transferred the wafer W,
42B retreats and retreats from the measurement table 50.

On the other hand, the measurement table 50 to which the wafer W has been transferred rotates the wafer W, and the pre-alignment sensor 56 measures the approximate position of the notch with respect to the rotating wafer W, and the fine alignment sensor 58 Measures the diameter of the wafer W and accurately determines the center position of the wafer. At the same time, the thickness sensor 5
4 measures the thickness of the outer peripheral portion of the wafer W.

When the above measurements are completed, the measurement table 50 temporarily stops rotating. Then, it rotates by a predetermined amount based on the measurement result of the pre-alignment sensor 58 to position the notch at a predetermined notch measurement position. When the notch is located at the notch measurement position, the measurement table 50 slowly rotates the wafer W. Then, the fine alignment sensor 58 accurately measures the notch position with respect to the rotating wafer W. At the same time, the notch depth is measured. After the measurement, the measurement table 50 stops rotating.

Thus, the pre-measurement of the wafer W is completed. Then, the positioning of the wafer W is performed based on the measurement result. Positioning is performed as follows. First, the notch is turned in a predetermined direction by rotating the measurement table 50 by a predetermined amount. Since the position of the notch can be known from the result of the previous measurement, the rotation amount of the measurement table 50 is determined based on the result of the previous measurement.

Next, the grinding table 76 is moved by a predetermined amount in the XY direction from a predetermined origin position. This is because the wafer W is supplied by the supply transfer arm 108 described below.
Is transferred from the measurement table 50 to the grinding table 76 so that the center of the grinding table 76 matches the center of the wafer W. Here, the origin position is set as follows. That is, the center is the measurement table 5
When the wafer W matching the center of the wafer W is transferred to the grinding table 76 by the supply transfer arm 108, the origin position of the grinding table 76 is set to a position where the center of the grinding table 76 matches the center of the wafer W. ing.

Since the center position of the wafer W can be known from the result of the previous measurement, the moving amount of the grinding table 76 is determined based on the result of the previous measurement. Thus, the positioning of the wafer W is completed. After the completion of the positioning, the wafer W is transferred from the measurement table 50 to the grinding table 76. The transport is performed as follows.

During the above positioning, the supply transfer arm 108 is located at the wafer receiving position shown in FIG. 6 and stands by. On the other hand, the recovery transfer arm 116
Is waiting at the standby position. When the positioning is completed, the supply transfer arm 108 moves 90 degrees clockwise.
° turn. As a result, as shown by the two-dot broken line in FIG.
0 is located above the measurement table 50. The supply transfer arm 108 is lowered by a predetermined amount and the measurement table 5
The wafer W on 0 is received, and then rises again by a predetermined amount. Then, it turns 90 ° in the counterclockwise direction and returns to the wafer receiving position. The supply transfer arm 108, which has returned to the wafer receiving position, slides along the horizontal guide 104 to move to the processing section delivery position shown in FIG.

Since the grinding table 76 positioned at the predetermined position as described above is on standby at the processing section delivery position, the supply transfer arm 108 is lowered by a predetermined amount to transfer the wafer W to the grinding table 76. The supply transfer arm 108 that has delivered the wafer W
It rises again by a predetermined amount, and then slides along the horizontal guide 104 to move to the wafer delivery position again.

On the other hand, the grinding table 76 suction-holds the transferred wafer W by vacuum suction. Here, the center of the wafer W held on the grinding table 76 is set by the above-described positioning operation.
6 and the notch is held in a predetermined direction. Therefore,
Processing does not need to be performed again, and processing can be started as it is. After holding the wafer W by the grinding table 76, the processing unit 18 starts chamfering the wafer W.

Here, while the processing unit 18 is performing the chamfering of the wafer W, the pre-measuring device 46 of the measuring unit 16
Then, the pre-measurement of the wafer W to be chamfered by the processing unit 18 is performed in advance. At the same time, the transfer arm for collection 116 moves to the processing part delivery position and stands by. When a series of chamfering (chamfering of the outer periphery and the notch) is completed in the processing unit 18, the grinding table 76 moves to the processing unit delivery position. When the grinding table 76 moves to the processing section delivery position, the recovery transfer arm 116 that has been waiting is lowered by a predetermined amount, receives the wafer W from the grinding table 76, and moves up. The recovery transfer arm 116 is thereafter moved to the horizontal guide 104
6 to move to the washing unit delivery position shown in FIG.

The recovery transfer arm 116 that has moved to the cleaning section transfer position moves down a predetermined distance there and transfers the wafer W to the cleaning table 94 of the spin cleaning apparatus 90. Then, after the delivery, it rises again by a predetermined distance, and then slides along the horizontal guide 104 to move to the standby position shown in FIG. On the other hand, the spin cleaning device 90 that has received the wafer W starts cleaning the wafer W after the recovery transfer arm 116 moves up.

Here, the spin cleaning device 90 is used as described above.
During the cleaning of the wafer W, the wafer W to be chamfered next through the same process as described above is processed by the processing unit 18.
Supplied to Then, the wafer W is chamfered. That is, the processing of the wafer W is performed simultaneously in the processing unit 18 and the cleaning unit 20. Spin cleaning device 9
When the cleaning of the wafer W is completed at 0, the elevating arm 96 of the wafer elevating device 92 is lowered by a predetermined amount, and receives the wafer W from the cleaning table 94. The lift arm 96 that has received the wafer W rises by a predetermined amount while holding the wafer W and returns to the original position.

On the other hand, when the chamfering of the next wafer W is completed in the processing section 18, the recovery transfer arm 116 receives the wafer W from the grinding table 76 and carries it to the cleaning table 94 in the same procedure as described above.
Here, since the wafer W previously cleaned by the spin cleaning device 90 is waiting above the cleaning table 94 while being held by the elevating arm 96 of the wafer elevating device 92, the collection transfer arm 116 Transfers the wafer W transported from the processing unit 18 to the spin cleaning device 80, then raises the wafer W by a predetermined amount, and receives the wafer W from the lifting arm 96. At this time, the recovery transfer arm 116 suction-holds and receives the back surface of the wafer W by the suction pads 120, 120 provided on the upper end of the recovery transfer arm 116. The collection transfer arm 116 that has received the wafer W descends by a predetermined amount and moves to the standby position.

Here, the wafer W chamfered by the processing unit 18 as described above is transferred to the transfer arm 1 for collection.
When the wafer W is transferred to the spin cleaning device 90 by the processing unit 16, the wafer W to be chamfered next is aligned in the processing unit 18. When the alignment is completed, the supply transfer arm 108 transports the wafer W from the pre-measurement device 46 of the measurement unit 16 to the grinding table 76 of the processing unit 18. In the processing section 18, the grinding table 7
After receiving the wafer W in 6, the chamfering of the wafer W is started.

On the other hand, the supply transfer arm 108 that has transported the wafer W to the grinding table 76 moves to the wafer receiving position. At the same time, the recovery transfer arm 116 located at the standby position moves to the wafer receiving position. When the supply transfer arm 108 and the recovery transfer arm 116 move to the wafer receiving position, the transfer arms 42A,
2B turns 90 ° clockwise. As a result, the transfer arms 42A and 42B of the measurement transfer robot 40 are positioned so as to face the wafer W held by the collection transfer arm 116. Thereafter, the transfer arms 42A and 42B of the measurement transfer robot 40 advance by a predetermined amount toward the wafer W held by the collection transfer arm 116. Then, the first transfer arm 42A receives the wafer W held by the recovery transfer arm 116 and retreats again. Thereafter, the transfer arms 42A and 42B of the measurement transfer robot 40 turn 90 ° in the counterclockwise direction and return to the original position.

On the other hand, the recovery transfer arm 116 that has delivered the wafer W slides along the horizontal guide 104 and moves to the processing part delivery position.
Further, the wafer W to be chamfered next is on standby on the measurement table 50 of the pre-measurement device 46 (standby in a state where the wafer W has been subjected to the positioning process). From wafer W
Receive. Then, the received wafer W is transferred to the processing unit 18. The processing unit 18 performs chamfering of the transferred wafer W.

When the supply transfer arm 108 transfers the wafer W from the pre-measurement device 46 to the processing section 18, the transfer arms 42A and 42B of the measurement transfer robot 40 rise by a predetermined amount. As a result, the transfer arms 42A and 42B of the measurement transfer robot 40 are positioned so as to face the rear measurement device 48. Transfer arm 42 of measurement transfer robot 40
A and 42B thereafter move forward by a predetermined amount toward the measurement table 60 of the rear measurement device 48. Then, the wafer W is transferred to the measurement table 60. Transfer arms 42A and 42B of measurement transfer robot 40 that has transferred wafer W
Is retracted by a predetermined amount and temporarily evacuated.

On the other hand, the post-measurement device 48 performs post-measurement of the wafer W transferred to the measurement table 60. Thereafter, the measurement is performed as follows. Note that calibration is performed prior to this measurement, and a method of the calibration will be described first. First, the measurement transfer robot 40 of the measuring conveyor section 14 takes out the master wafer W _M from the master wafer storage cassette (not shown) provided in the master wafer storage section 26.
Then, set on the measurement table 60 of the rear measuring device 48 and the master wafer W _M. Here, the master wafer W _M is a predetermined diameter (e.g., diameter φ200m
m) is a perfect circle wafer, and square marks M of a predetermined size (□ 10 mm) are respectively provided on the back surface and near the periphery of the front surface.

[0062] master wafer W _M is the measuring table 60
When set on the upper side, as shown in FIGS. 7A and 7B, an image of the peripheral portion of the master wafer W is captured by the first camera 62A and the second camera 62B. Then, the image data obtained by taking an image with the first camera 62A and the second camera 62B is
Is output to

A control device (not shown) is provided with a measurement table 60
Drives one to rotate the master wafer W _M is. The image data processing device 68 then determines the reference coordinates of the first camera 62A and the second camera 62 based on the image data obtained by the first camera 62A and the second camera 62B.
The distance from the reference coordinate of B is obtained. Next, the control unit (not shown), rotated by a predetermined amount a master wafer W _M by driving the measuring table 60, FIG. 7 (a), the (b), the a first camera 62A square mark M first It is positioned within the imaging area of the second camera 62B. At this time, the image data processing device 68 includes the first camera 62A and the second camera 62
The pixel corresponding to the square mark M is read based on the image data obtained by imaging by B, and the magnification is calibrated.

Thus, the calibration is completed. When the calibration is completed, the measurement transport unit 14
Measuring the transfer robot 40, a master wafer W _M was recovered from the measurement table 60, it terminates the original master wafer storage cassette. The above calibration is performed before the start of the chamfering process. Next, a post-measurement method of the wafer W by the post-measurement device 48 will be described.
In the post-measurement, the outer shape of the wafer W is measured, and the presence or absence of scratches or chips on the chamfered surface is measured. Specifically, as shown in FIG. 8, the diameter of the wafer W, the outer peripheral surface width (front and back),
Notch angle, notch corner R, notch bottom R, notch depth, and scratches on the chamfered surface,
Measure the presence or absence of chips (front and back).

The measurement of the diameter is as follows. Wafer W
Is set on the measurement table 60, FIG.
As shown in (b), an image of the periphery of the wafer W is captured by the first camera 62A and the second camera 62B. Then, the first camera 62A and the second camera 62B
The image data obtained by imaging in the image data processing device 6
8 is output. The image data processing device 68 has its first
The diameter of the wafer W is obtained based on the image data obtained by imaging with the camera 62A and the second camera 62B.

That is, the image data processing device 68 detects the edge position of the wafer W based on the image data obtained by the first camera 62A and the second camera 62B and obtains the wafer W from the edge position information. And the diameter of the wafer W is determined. Outer peripheral width (table,
The measurement of the back) is performed by the first camera 62 in the same manner as the diameter measurement.
The image data processing device 68 performs measurement based on A and image data obtained by imaging with the second camera 62B. That is, the image data processing device 68 performs the front-side chamfered surface C based on the image data obtained by imaging with the first camera 62A.
_The position of both edges of _F is detected, and the outer peripheral surface width of the front side of the wafer W is obtained from the position information of both edges. Similarly, the image data processing apparatus 68 detects the both edge positions of the back side of the chamfered surface C _B based on the image data obtained by imaging by the first camera 62A, the wafer W from the position information of the both edges Obtain the outer peripheral surface width on the back side.

The measurement of the notch angle, the notch corner R, the notch bottom R, and the notch depth are as follows. First,
A control device (not shown) drives the measurement table 60 to rotate the wafer W once. The image data processing device 68
At that time, the approximate position of the notch is measured based on the image data obtained by imaging with the first camera 62A and the second camera 62B. The control means (not shown) drives the measurement table 60 based on the measurement result, and the control means shown in FIG.
As shown in (b), the notch is located in the imaging area of the first camera 62A. The image data processing device 68 measures the notch angle, the notch corner R, the notch bottom R, and the notch depth based on the image data obtained by the first camera 62A and the second camera 62B at that time.

That is, when the notch angle is obtained, as shown in FIG. 11, both straight portions L _N1 and L _N2 of the notch are detected based on image data obtained by imaging with the first camera 62A. by detecting the edges to form a straight portion L _N1, L _N2 detects both linear portion L _N1, L _N2.), the two straight portions L
_The notch angle (θ _N ) is obtained by calculating the angle formed by _{N 1} and L _N2 .

When the notch corner R is obtained,
As shown in FIG. 11, first, the notch corner by detecting the edges forming the one of the detecting the notch corners NC ₁ (notched corner NC based on image data obtained by imaging by the first camera 62A Part NC is detected).
Then, from the three points on the notched corners NC ₁ seeking center O _NC1 notch corners NC _1, obtaining the notch corner R (r _NC1). The notch corner R (r _{NC 2} ) of the notch corner portion NC ₂ on the other side is obtained in the same manner.

When the notch bottom R is obtained, as shown in FIG. 11, first, the notch bottom B is detected based on the image data obtained by imaging with the first camera 62A (the notch bottom B is formed). The edge is detected to detect the notch bottom portion NB.) Then, the center O of the notch bottom portion NB is determined from three points on the notch bottom portion NB.
_The notch bottom R (r _NB ) is obtained by calculating _NB .

When the notch depth is determined, the notch depth is calculated as shown in FIG.
As shown in FIG. 7, first, the top B of the notch bottom B is determined based on the image data obtained by imaging with the first camera 62A.
Detect the position of _MAX . Then, the position information of the top _BMAX , the position information of the center position of the wafer W, and the wafer W
The notch depth D is determined from the diameter of the notch. As described above, the notch angle, the notch corner R, the notch bottom R, and the notch depth are measured.

The chamfered surface C on the front side of the wafer W_FWhen
Back chamfer C_BOf scratches and chips on the surface
Is as follows. As described above, the wafer W is measured
When set on the table 60, the circumference of the wafer W
The image of the edge is obtained by the first camera 62A and the second camera 62B.
Is imaged. Here, the chamfered surface C of the wafer W_F,
C_BWhen there is no flaw or the like, the first reflected lighting device 66A and the second
It is imaged white by the action of the two-reflection lighting device 66B.
You. However, if a scratch or the like has occurred, the chamfered surface C _F, C
_BIs imaged in black. Image data processing device
68 is provided by the first camera 62A and the second camera 62B.
Chamfered surface C based on image data obtained by imaging_F,
C_BThe presence or absence of a region having a brightness equal to or less than a predetermined brightness is checked.
If an area having a brightness equal to or less than the predetermined brightness is detected, the area is detected.
The area is judged to be damaged or missing. This operation is performed all around the wafer W.
Do over.

By the above series of measurements, the diameter of the wafer W, the outer peripheral surface width (front and back), the notch angle, the notch corner R, the notch bottom R, the notch depth, and
The presence or absence of scratches or chips on the chamfered surface (front and back) is measured. The control device (not shown) judges the quality of the wafer W based on the measurement result of the subsequent measurement. That is, it is determined whether or not the processing is performed according to a predetermined standard, and whether or not the chamfered surface is damaged or chipped. Then, if the chamfered surface is not scratched or chipped and processed according to a predetermined standard, it is regarded as a good wafer W, if it is not processed according to the predetermined standard, or if the chamfered surface has scratches or chipping etc. and defective wafer W _X.

As a result of the above determination, when it is determined that the wafer W is good, the wafer W is returned to the original wafer cassette 3.
Collected to 0. That is, first, the measurement transport robot 4
The 0 transfer arms 42A and 42B advance by a predetermined amount, and receive the wafer W from the measurement table 60 by the first transfer arm 42A. Then, after retreating by a predetermined amount, it lowers by a predetermined amount and returns to the standby position.

Here, while the post-measurement device 48 performs post-measurement of the wafer W as described above, the supply / recovery robot 34 takes out the next wafer W to be chamfered from the wafer cassette 30 and sets a predetermined wafer. Waiting at the delivery position. When the transfer arms 42A and 42B of the measurement transfer robot 40 return to the standby position, they turn by a predetermined amount so as to face the transfer arm 36 of the supply and recovery robot 34. Then, the turned measurement transport robot 4
The transfer arm 36 of the supply / recovery robot 34 advances by a predetermined amount with respect to the transfer arms 42A and 42B of No. 0, and transfers the wafer W to the second transfer arm 42B of the measurement transfer robot 40.

The transfer arm 36 of the supply and recovery robot 34, which has transferred the wafer W to the second transfer arm 42B, once retreats by a predetermined amount and then moves up by a predetermined amount. Then, the first transfer arm 42 of the measurement transfer robot 40 advances again by a predetermined amount.
The chamfered wafer W held at A is received. The transfer arm 36 of the supply and recovery robot 34 that has received the chamfered wafer W retreats by a predetermined amount and then turns by a predetermined amount. Then, the wafer W is moved to the same position of the wafer cassette 30 as when the wafer W was taken out, and the wafer W is stored at the same position as when the wafer W was taken out.

On the other hand, the transfer arms 42A and 42B of the measurement transfer robot 40 that has received the wafer W to be newly processed
Is turned by a predetermined amount and then moved forward by a predetermined amount.
Is transferred to the wafer W. Thereby, simultaneously with the recovery of the chamfered wafer W, the supply of a new chamfered wafer W can be performed. Therefore, in the case of a good wafer W, by performing the above steps, the wafers W in the wafer cassette 30 can be sequentially processed.

On the other hand, the result of the post-measurement indicates that the defective wafer W
If it is determined that the _X, its wafer W _X is recovered in the defective wafer collecting cassette 124. In this case,
It is performed as follows. First, the transport arm 42A of the measuring carrier robot 40, 42B is advanced a predetermined amount, receives the defective wafer W _X from the measuring table 60 by the first transfer arm 42A. Then, after retreating by a predetermined amount, it lowers by a predetermined amount and returns to the standby position.

The measuring and transporting robot 40 returned to the standby position
The transfer arms 42A and 42B turn 180 ° and face the defective wafer collection cassette 124. Transport arm 42A, 42B of the measurement carrier robot 40, and thereafter, for accommodating the defective wafer W _X defective wafer collecting cassette 124 by a predetermined amount forward After rising a predetermined amount. After the storage, the transfer arms 42A and 42B of the measurement transfer robot 40 are retracted by a predetermined amount and lowered by a predetermined amount. And it turns 90 degrees toward the supply and recovery part 12.

While the post-measurement device 48 performs post-measurement of the wafer W in the same manner as described above, the supply / recovery robot 34 takes out the wafer W to be chamfered next from the wafer cassette 30 and transfers the wafer W to a predetermined wafer. Waiting in position. Transfer arm 42 of measurement transfer robot 40
A and 42B turn by 90 °, so as to face the transfer arm 36 of the supply and recovery robot 34. The transfer arm 36 of the supply and recovery robot 34 moves forward by a predetermined amount, and transfers the wafer W to the second transfer arm 42B of the measurement transfer robot 40 facing the transfer arm 36B. The transfer arms 42A and 42B of the measurement transfer robot 40 that has received the wafer W turn a predetermined amount, and then move forward by a predetermined amount to transfer the wafer W to the pre-measurement device 46.

[0081] Thus, simultaneously with the recovery of the defective wafer W _X, it is possible to supply the wafer W to be newly chamfering. Accordingly, even when a defective wafer W _X, by carrying out the above steps, it is possible to slide into sequentially processed wafers W in the wafer cassette 30. Further, from the results of post-measurement, if it is determined that the defective wafer W _X, since deviation in the processing conditions of the processing unit 18 (processing dimension) is occurring, the control unit of the processing unit 18, not shown, of the measurement after the The processing conditions (processing dimensions) are corrected based on the measurement results (feedback control). For example,
When the diameter is reduced (in the case of excessive grinding), the feed of the wafer W is reduced, and when the diameter is increased (in the case of insufficient grinding), the feed of the wafer W is increased. If the grinding is performed eccentrically, the positioning accuracy is corrected.

As described above, according to the wafer chamfering apparatus 10 of the first embodiment, it is possible to measure the outer shape of the wafer W after the chamfering and to determine the presence or absence of scratches and chips on the machine. Then, it is possible to this measurement result the quality of the processed wafer W is determined based on, recovered separately and good wafer W and bad wafer W _X. Therefore,
Since each operation conventionally performed separately can be continuously performed, processing efficiency is improved.

Since the measurement results of the subsequent measurement are fed back and the processing conditions (processing dimensions) are sequentially corrected, high-precision processing can be performed. In the first embodiment, the case where the notched wafer W is chamfered has been described. However, the wafer W with the orientation flat can be chamfered by a similar method.

The case where the post-measurement device 48 performs the post-measurement of the wafer W with the orientation flat is as follows. The post-measurement of the wafer W with the orientation flat, as shown in FIG.
Outer peripheral surface width (front, back), orientation flat corner R, and
Measure the presence or absence of scratches and chips on the chamfered surface (front and back). Here, the method of measuring the A diameter, the outer peripheral surface width (front and back), and the presence or absence of scratches and chips on the chamfered surface (front and back) are the same as those of the notched wafer W described above. .

The measurement of the B diameter is as follows. First, a control device (not shown) drives the measurement table 60 to rotate the wafer W once. The image data processing device 68 measures the approximate position of the orientation flat based on the image data obtained by the first camera 62A and the second camera 62B at that time. The control means (not shown) drives the measurement table 60 based on the measurement result, and the control means shown in FIG.
As shown in (b), the orientation flat is positioned within the imaging area of the first camera 62A. The image data processing device 68 obtains the B diameter of the wafer W based on the image data obtained by capturing images with the first camera 62A and the second camera 62B at that time. That is, the image data processing apparatus 68 detects the edge position of the linear portion L _F of the orientation flat on the basis of image data obtained by imaging by the first camera 62A and the second camera 62B, the wafer from the position information of the edge Find the B diameter of W.

The B diameter is obtained as described above, and the AB diameter is obtained from the obtained B diameter and A diameter. The measurement of the orientation flat corner R is as follows. First, FIG.
(A), (b), the positions the one of the orientation flat corner OC ₁ to the imaging area of the first camera 62A. The image data processing device 68, as shown in FIG.
Then detecting the orientation flat corner OC ₁ of the wafer W based on the image data obtained by imaging by the first camera 62A and the second camera 62B (orientation flat corner OC
_The edge forming ₁ is detected and the orientation flat corner OC
Detect ₁ ). And the orientation flat corner OC
The center O _OC1 of the orientation flat corner OC ₁ from the three points above ₁
To find the orientation flat corner R (r _OC1 ). Similar methods seek other side of the orientation flat corner OC ₂ orientation flat corner R (r _OC2).

By the above method, the presence or absence of scratches or chips on the wafer A with the orientation flat, the diameter A, the diameter B, the diameter AB, the outer peripheral surface width (front and back), the orientation flat corner R, and the chamfered surface. (Front, back) is measured.
In the above measurement, only one location on the wafer is measured to obtain the measured values of the A diameter and the outer peripheral surface width.
The A diameter and the outer peripheral surface width may be measured at an interval of °. Thereby, the measurement accuracy can be further improved.

The first camera 62A and the second camera 62
The method is not limited to the above-described measurement method as long as the measurement is performed based on image data obtained by imaging in B.
Further, the post-measurement device 48 according to the first embodiment performs the post-measurement using the two cameras 62A and 62B, but may perform the post-measurement using only one camera. . In this case, for example, the front side of the wafer W is measured first, and then the wafer W is turned over and the back side is measured.

The wafer chamfering apparatus 10 according to the first embodiment is configured so that the pre-measurement and the post-measurement are performed by separate apparatuses, however, they may be shared.
That is, the measuring unit 16 is constituted only by the post-measuring device 48,
The post-measurement device 48 is configured to perform pre-measurement and post-measurement. This makes it possible to reduce waste and reduce the size of the device.

[0090] In the wafer chamfering apparatus 10 of the first embodiment, when a defective wafer W _X in the later measuring device 48 is detected, but so as to collect separately a good wafer W, the chamfered surface because when a defective wafer W _X that scratches or chipping or the like occurs is detected, is considered to be abnormal periphery grinding wheel 82 or the notch grinding wheel 88 of the processing section 18 (clogging) occurs, the device itself May be automatically stopped. That is, a defective wafer W having a chamfered surface with scratches, chips, etc.
_{When X} is detected, a device stop signal is output to a control device (not shown) that controls the operation of the wafer chamfering device 10. Thus, the occurrence of further defective wafer W _X so it is possible to prevent.

[0091] Also, when a defective wafer W _X that scratches or chipping occurs in the chamfered surface is detected, suspends the operation,
You may comprise so that dressing may be implemented automatically and operation may be started again. As a result, a highly accurate wafer can be processed without lowering the throughput. In this case, the dressing is performed as follows.

The dressing is performed by bringing the dressing stone 150 into contact with the groove of the outer peripheral grinding wheel 82 or the notch grinding wheel 88 rotated at a high speed. The dressing stone 150 is, as shown in FIGS. 16 and 17,
The dressing jig 152 is held in a disk-shaped dressing jig 152.
Hold at 6. Usually, this dressing jig 152
It is stored in a dressing jig storage cassette (not shown) (installed below the defective wafer collection cassette 124), and is taken out at the time of dressing and set on the grinding table 76. The specific implementation procedure is as follows.

[0093] After the measurement device is detected defective wafer W _X is 48, when the dressing execution signal is outputted, the control unit (not shown), first, suspends the processing of the wafer W. Then, the operation mode is changed to the dressing execution mode. In the dressing execution mode, first, the measurement transport robot 40 of the measurement transport unit 14 takes out the dressing jig 152 stored in the dressing jig storage cassette (not shown) from the dressing jig storage cassette. Then, the dressing jig 152 is transported to the pre-measuring device 46.

The pre-measurement device 46 to which the dressing jig 152 has been conveyed measures the center position of the dressing jig 152 formed in a disk shape and the position of the dressing stone 150, and performs alignment. That is, when the dressing jig 152 is transferred onto the grinding table 76, the center of the dressing jig 152 is
The grinding table 76 is moved so as to coincide with the center, and the measurement table 50 is rotated so that the dressing stone 150 is located at a predetermined position (a position facing the outer peripheral grinding wheel 82).

When the alignment is completed, the supply transfer arm 108 transfers the dressing jig 150 from the measurement table 50 to the grinding table 76. The grinding table 76 sucks and holds the transferred dressing jig 152. Here, the dressing jig 152 held by the grinding table 76 is held by the above-described alignment so that the center thereof is aligned with the center of the grinding table 76, and the dressing stone 150
Is held at a predetermined position (a position facing the outer peripheral grinding wheel 82).

The dressing jig 150 is used for the grinding table 7
6, the outer peripheral grinding wheel 82 starts rotating at a high speed, and the grinding table 76 moves forward by a predetermined distance toward the outer peripheral grinding wheel 82 that rotates at a high speed. As a result, the dressing stone 150 comes into contact with the groove of the outer peripheral grinding wheel 82 to perform dressing. When the dressing of the outer peripheral grinding wheel 82 is completed, the dressing of the notch grinding wheel 88 is performed in the same manner. That is, the notch grinding wheel 88
Starts high-speed rotation, and the dressing stone 150 is brought into contact with the groove of the notch grinding wheel 88 that rotates at high speed to perform dressing.

When the dressing is completed, the collection transfer arm 116 collects the dressing jig 152 from the grinding table 76 and moves to the wafer receiving position. Then, the measuring and transporting robot 40 receives the dressing jig 152 from the collection transfer arm 116 moved to the wafer receiving position, and stores the dressing jig 152 in a dressing jig storage cassette (not shown).

When the dressing jig 152 is stored in the dressing jig storage cassette, the dressing execution mode is released. Then, the operation mode is changed to the normal operation mode, and the processing of the interrupted wafer W is restarted. When the defective wafer W _X are detected as soon By setting to perform dressing, it is possible to secure a cutting blade of the outer grinding wheel 82 and the notch grinding wheel 88 is always good cutting performance, scratches Thus, it is possible to grind a highly accurate wafer W without chipping.

Next, a description will be given of a second embodiment of the wafer chamfering apparatus according to the present invention. In the wafer chamfering apparatus 10 according to the above-described first embodiment, the post-measurement device 48 is configured to measure the outer shape of the wafer W and to detect only the presence or absence of a scratch or chip on the chamfered surface. . In the post-measurement device of the wafer chamfering device according to the second embodiment described below, in addition to the measurement of the outer shape of the wafer W, the detection of the presence or absence of scratches or chips on the chamfered surface, the outer peripheral cross-sectional shape of the wafer W Is also measured.

FIGS. 18 and 19 are a plan view and a side view showing the configuration of a post-measurement device of the wafer chamfering device of the second embodiment, respectively. As shown in the figure, the post-measurement device 200 according to the second embodiment includes a measurement table 60, a first camera 62A, a second camera 62B, a third camera 62C, a first transmitted illumination device 64A, and a second transmitted illumination. Device 64B, third
It includes a transmission illumination device 64C, a first reflection illumination device 66A, a second reflection illumination device 66B, and an image data processing device 68.

The construction of the measurement table 60, the first camera 62A, the second camera 62B, the first transmitted illumination device 64A, the second transmitted illumination device 64B, and the first reflected illumination device 66A and the second reflected illumination device 66B are as follows. This is the same as the post-measurement device 48 of the above-described embodiment. The third camera 62C is
The outer peripheral portion of the wafer W held on the measurement table 60 is imaged in a direction perpendicular to the axis of the wafer W, that is, in a horizontal direction. The third transmission illuminating device 64C is installed so as to face the third camera 62C, and irradiates transmitted light horizontally to the outer peripheral portion of the wafer W.

The image data processing device 68 includes the first camera 6
2A, outer shape measurement of a wafer based on image data obtained by imaging with the second camera 62B and the third camera 62C,
The outer peripheral cross-sectional shape is measured, and the presence or absence of scratches or chips on the chamfered surface is detected. The rear measurement device 200 is configured as described above. After this, the second device incorporating the measuring device 200
The operation of the wafer chamfering apparatus according to the embodiment is as follows. Since the steps until the wafer W is transferred to the post-measurement device 200 are the same as those of the wafer chamfering device of the first embodiment described above, only the measurement method by the post-measurement device 200 will be described here.

In the post-measurement, the outer shape of the wafer W, the outer peripheral cross-sectional shape, and the presence or absence of scratches or chips on the chamfered surface are measured. Specifically, the diameter of the wafer W, the outer peripheral surface width (front and back), the notch angle, the notch corner R,
Notch bottom R, notch depth, surface angle (table,
The back), the tip corner R (front and back), the surface width in the thickness direction, and (10) the presence or absence of scratches or chips on the chamfered surface (front and back) are measured. The diameter,
The methods for measuring the outer peripheral surface width (front and back), the notch angle, the notch corner R, the notch bottom R, the notch depth, and the method for measuring (10) the presence or absence of scratches and chips on the chamfered surface (front and back) are described above. Post-measuring device 4 according to the first embodiment
8, the method of measuring the surface angle (front and back), the tip corner R (front and back), and the surface width in the thickness direction will be described.

The measurement of the plane angle is as follows. When the wafer W is set on the measurement table 60, an image of the outer peripheral portion of the wafer W viewed from the horizontal direction is captured by the third camera 62C as shown in FIG. And
The image data obtained by taking an image with the third camera 62C is output to the image data processing device 68. The image data processing device 68 determines the surface angle of the wafer W based on the image data obtained by capturing the image with the third camera 62C.

That is, the image data processing device 68 detects the front chamfered surface of the wafer W and the surface of the wafer W based on the image data obtained by imaging with the third camera 62C (the front surface of the wafer W). The edge forming the chamfered surface and the surface of the wafer W is detected to detect the chamfered surface on the front side of the wafer W and the surface of the wafer W.) The angle between both is calculated to obtain the surface angle on the front side of the wafer W. . Also,
Similarly, the rear chamfered surface of the wafer W and the back surface of the wafer W are detected based on the image data obtained by imaging with the third camera 62C (the chamfered surface on the back side of the wafer W and the rear surface of the wafer W are formed). The edge of the wafer W
And the back surface of the wafer W are detected. ),
The angle between the two is calculated to determine the surface angle on the back side of the wafer W.

When the tip corner R is obtained, as shown in FIG. 20, first, the tip corner on the front side of the wafer W is detected based on the image data obtained by the third camera 62C (FIG. 20). The edge forming the front end corner portion on the front side of the wafer W is detected to detect the front end corner portion.) Then, the center of the tip corner is determined from the three points on the tip corner, and the tip corner R is determined. A tip corner R on the back side of the wafer W is obtained in the same manner.

When the surface width in the thickness direction is obtained, first, as shown in FIG. 20, the front end corner R of the front side of the wafer W is obtained based on the image data obtained by imaging with the third camera 62C. And the center position of the rear end corner R is determined. Then, the distance between the two is calculated and the wafer W
The surface width in the thickness direction is determined. From the above measurements, the surface angle (front and back) and the tip corner R (front,
Back), and the surface width in the thickness direction are measured. The control device (not shown) determines the quality of the outer peripheral cross-sectional shape of the wafer W based on the measurement result. That is, it is determined whether the wafer W is processed according to a predetermined standard. Then, the surface angle and the tip corner R is good wafer W if it is processed into a street predetermined standard, if not processed in as a predetermined standard for a defective wafer W _X.

As in the above-described wafer chamfering apparatus 10 of the first embodiment, if the result of the above determination is that the wafer W is good, the original wafer cassette 3
Were collected 0, if it is determined that the defective wafer W _X recovers to the defective wafer collecting cassette 124. As described above, in the wafer chamfering apparatus according to the second embodiment, the post-measurement apparatus 200 measures the outer shape of the wafer W, measures the presence or absence of scratches or chips on the chamfered surface, and measures the outer peripheral cross-sectional shape ( (Surface angle, tip corner R, and surface width in the thickness direction). Thereby, a more accurate processing state can be grasped.

If a defect occurs in the outer peripheral cross-sectional shape, it is considered that an abnormality (out of shape, etc.) has occurred in the outer peripheral grinding wheel 82 or the notch grinding wheel 88 of the processing portion 18. If a defect is detected in the outer peripheral cross-sectional shape in 200, the operation of the apparatus itself may be automatically stopped. That is, when the rear measuring apparatus 200 in terms angle and the tip corner R and the thickness direction of the surface width is not ground in as standard defective wafer W _X is detected, the control device for controlling the operation of the wafer chamfering apparatus 10 (Not shown) to output a device stop signal. Thus, the occurrence of further defective wafer W _X so it is possible to prevent.

[0110] Also, when a defective wafer W _X of the outer peripheral cross-sectional shape is not ground in as standard is detected, suspends the operation to start the operation again performed truing (type re) automatically May be configured. As a result, a highly accurate wafer can be processed without lowering the throughput. In this case, truing is performed as follows.

As shown in FIG. 21, a truer 160 is mounted coaxially with the lower part of the grinding table 76. The truer 160 is a tool for truing the outer peripheral processing whetstone 82, and is a base metal 162 formed in a disk shape.
A truing grindstone 164 is integrally fixed to the outer peripheral portion of the. The truing grindstone 164 is formed in the same cross-sectional shape as the groove shape of the outer peripheral processing grindstone 82. By rotating the truing grindstone 164, it is pressed against the groove of the outer peripheral processing grindstone 82 or the notch grinding wheel 88. The groove of the outer peripheral grinding wheel 82 or the notch grinding wheel 88 is trued. The specific implementation procedure is as follows.

[0112] After the outer peripheral cross sectional shape measuring device 200 is the defective wafer W _X that is not ground in as standard is detected, the truing execution signal is outputted. The control device (not shown) first suspends the processing of the wafer W. Then, the operation mode is changed to the truing execution mode. In the truing execution mode, FIG.
As shown in (a), first, the alignment between the truer 160 and the groove formed on the outer peripheral grinding wheel 82 is performed. Next, the outer peripheral grinding wheel 82 and the truer 160 rotate (the truer 160 rotates by rotating the grinding table 76). Next, the truer 160 moves a predetermined distance toward the outer peripheral grinding wheel 82. As a result,
As shown in FIG. 6B, the truing grindstone 164 comes into contact with the groove of the outer peripheral grinding wheel 82, and the outer peripheral grinding wheel 82 is trued. When the truing is completed, the truer 160 returns to the original position as shown in FIG. Then, the rotation together with the outer peripheral grinding wheel 82 stops.

When the truing of the outer peripheral grinding wheel 82 is completed, the truing of the notch grinding wheel 88 is performed in the same procedure. That is, after alignment between the truer 160 and the groove formed in the notch grinding wheel 88 is performed, the truer 1 is moved toward the rotating notch grinding wheel 88.
60 moves a predetermined distance while rotating. As a result, the truing grindstone 164 comes into contact with the groove of the notch grinding grindstone 88, and the notch grinding grindstone 88 is trued. When the truing is completed, the truer 160 returns to the original position, and stops rotating together with the notch grinding wheel 88.

When the truer 160 returns to the original position,
The truing execution mode is canceled. Then, the mode is changed to the normal operation mode, and the processing of the interrupted wafer W is restarted. With such outer径断sectional shape detecting a defective wafer W _X that is not ground in as standard, immediately by setting to perform truing can be processed with high precision wafer W along the standard Become like

[0115]

As described above, according to the present invention,
Since the external shape of the processed wafer and the measurement of the presence or absence of scratches and chips can be measured on the machine, the processing efficiency is increased and the throughput is improved. Further, the quality of the wafer is determined based on the measurement result, and the good wafer and the defective wafer are separated and collected, whereby the processing efficiency can be further improved. In addition, by feeding back the measurement result to the processing unit, highly accurate processing can be performed.

[Brief description of the drawings]

FIG. 1 is a plan view showing an embodiment configuration of a wafer chamfering apparatus according to the present invention.

FIG. 2 is a perspective view showing an embodiment of a wafer chamfering apparatus according to the present invention.

FIG. 3 is a side view showing the configuration of the post-measuring device.

FIG. 4 is a side view showing a configuration of a processing unit and a processing transport unit.

FIG. 5 is a perspective view showing a configuration of a processing unit.

FIG. 6 is a plan view showing a configuration of a processing transport unit.

FIG. 7 is a plan view illustrating a measuring method using the post-measuring device.

FIG. 8 is a plan view for explaining measurement items of post-measurement (in the case of a notched wafer).

FIG. 9 is a plan view illustrating a measuring method using the post-measuring device.

FIG. 10 is a plan view illustrating a measuring method using the post-measuring device.

FIG. 11 is a plan view illustrating a measuring method using the post-measuring device.

FIG. 12 is a plan view illustrating measurement items of post-measurement (in the case of a wafer with an orientation flat).

FIG. 13 is a plan view illustrating a measuring method using the post-measuring device.

FIG. 14 is a plan view illustrating a measuring method using the post-measuring device.

FIG. 15 is a plan view illustrating a measuring method using the post-measuring device.

FIG. 16 is a plan view showing a configuration of a dressing jig.

FIG. 17 is a side view showing the configuration of a dressing jig.

FIG. 18 is a plan view showing a configuration of a post-measurement device according to the second embodiment.

FIG. 19 is a side view showing the configuration of the post-measurement device according to the second embodiment.

FIG. 20 is an explanatory diagram of a measuring method using the post-measuring device according to the second embodiment.

FIG. 21 is a front view, partly in section, showing the structure of a truer.

FIG. 22 is an explanatory diagram of a truing method using a truer.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Wafer chamfering device 12 ... Supply collection part 14 ... Measurement conveyance part 16 ... Measurement part 18 ... Processing part 20 ... Cleaning part 22 ... Processing conveyance part 24 ... Defective wafer collection part 26 ... Master wafer storage part 30 ... Wafer cassette 34 ... Supply / recovery robot 40 ... Measurement transfer robot 48 ... Rear measurement device 60 ... Measurement table 62A ... First camera 62B ... Second camera 68 ... Image data processing device 76 ... Grinding table 82 ... Outer circumference grinding wheel 88 ... Notch grinding wheel 90 ... Spin Cleaning device 108: Supply transfer arm 116: Recovery transfer arm W: Wafer

Claims (11)

[Claims] 1. A processing section for chamfering a wafer, a supply section for supplying the wafer to the processing section, and a detection section for detecting a scratch or chip on the chamfered surface of the wafer chamfered by the processing section. And a recovery unit for recovering the wafer that has been detected by the detection unit, wherein the detection unit includes: a measurement table that holds and rotates the wafer; and a measurement table that is held by the measurement table. Imaging means for imaging the chamfered surface of the rotating wafer, and image data processing means for detecting a scratch generated on the chamfered surface of the wafer based on image data obtained by imaging with the imaging means, chipping, A wafer chamfering apparatus, comprising: 2. The recovery unit according to claim 1, wherein the recovery unit includes a good wafer recovery unit that recovers a good wafer without scratches and chips, and a defective wafer recovery unit that collects a bad wafer with scratches and chips. 2. The wafer chamfering apparatus according to claim 1, wherein the wafer is separated and collected based on the detection result. 3. The wafer chamfering device according to claim 1, wherein the operation of the wafer chamfering device is stopped when the detecting section detects a damaged or chipped wafer. 4. The dressing device according to claim 1, wherein the processing unit includes a grindstone dressing unit, and the dressing unit performs dressing of the grindstone when the detection unit detects a scratched or chipped wafer. Or the wafer chamfering apparatus according to 2. 5. A processing section for chamfering a wafer, a supply section for supplying the wafer to the processing section, a measuring section for measuring an outer shape of the wafer chamfered by the processing section, and a measurement section for measuring the outer shape of the wafer. A collecting unit for collecting the finished wafer, wherein the measuring unit is provided at a position separated by a predetermined distance from a rotation center of the measuring table, the measuring table holding and rotating the wafer. Imaging means for imaging an outer peripheral portion of the rotating wafer held by the measurement table from a direction along the axis of the wafer; and an outer shape of the wafer based on image data obtained by the imaging means. Image data processing means for measuring
A wafer chamfering device, comprising: 6. The recovering section, comprising: a good wafer recovering section for recovering a good wafer processed according to a standard; and a defective wafer recovering section for recovering a defective wafer processed out of the standard. 6. The wafer chamfering apparatus according to claim 5, wherein the wafer is separated and collected based on a measurement result of the measurement unit. 7. The processing unit according to claim 5, wherein the processing unit corrects a processing condition based on a measurement result of the measurement unit.
Or the wafer chamfering apparatus according to 6. 8. A processing unit for chamfering a wafer, a supply unit for supplying the wafer to the processing unit, a measuring unit for measuring an outer peripheral cross-sectional shape of the wafer chamfered by the processing unit, and the measuring unit A collecting section that collects the wafers that have been measured in the above, wherein the measuring section comprises: a measuring table that holds and rotates the wafer; and a predetermined distance from a rotation center of the measuring table. An image pickup unit which is installed at a position, and which picks up an outer peripheral portion of a rotating wafer held by the measurement table from a direction orthogonal to an axis of the wafer, based on image data obtained by the image pickup unit. Image data processing means for measuring the cross-sectional shape of the outer peripheral portion of the wafer. 9. The recovery unit, comprising: a good wafer recovery unit that recovers a good wafer processed according to a standard; and a defective wafer recovery unit that recovers a defective wafer processed out of the standard. 9. The wafer chamfering apparatus according to claim 8, wherein the wafer is separated and collected based on a measurement result of the measurement unit. 10. The wafer chamfering apparatus according to claim 8, wherein the operation of the wafer chamfering apparatus is stopped when the detecting section detects a wafer processed out of the standard. 11. The processing unit includes a truing unit for grinding stones, and the truing unit performs truing of the grinding wheel when the detecting unit detects a wafer processed out of standard. Item 10. The wafer chamfering device according to Item 8 or 9.