JP2000317789A - Wafer chamfering method and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To chamfer the peripheral edge of a wafer into a desired shape by abutting a cylindrical grinding wheel arranged perpendicularly to the rotational axis of the wafer on the peripheral edge section of the wafer, and relatively moving the wafer and the grinding wheel along the chamfer shape of the wafer to be machined. SOLUTION: A wafer table 20 is connected to the output shaft of a motor and is rotated when the motor is driven. When a moving means installed with the motor is driven, the wafer table 20 is moved in three x, y, z-axis directions. The rotary axis γ of a grinding wheel 30 is arranged perpendicularly to the rotary axis θ of the wafer table 20, and its rotary axis γ is arranged along the y-axis direction. The peripheral face of the rotating grinding wheel 30 is abutted on the peripheral edge of a rotating wafer W, the wafer W is moved along the chamfer shape of the wafer W to be machined, and the peripheral edge of the wafer W is machined into the prescribed chamfer shape.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for chamfering a wafer, and more particularly to a method and an apparatus for chamfering a periphery of a wafer made of a brittle material such as silicon, glass, ceramic or the like, which is used as a material of a semiconductor device.

[0002]

2. Description of the Related Art A wafer made of silicon or the like, which is used as a material of a semiconductor device, is thinly cut out from an ingot by a slicing machine or the like, and the periphery thereof is chamfered to prevent chipping or cracking. A conventional wafer chamfering apparatus performs chamfering by pressing a peripheral edge of a wafer against a grinding groove formed on an outer periphery of the grinding stone by relatively moving a grinding stone and a wafer having a rotation axis parallel to each other while rotating them relatively to each other. Like that.

[0003]

However, in the conventional wafer chamfering apparatus, since the chamfered shape of the wafer depends on the groove shape of the grindstone, the grindstone must be replaced when processing into a wafer having a different chamfered shape. There is a disadvantage that. Further, in the conventional wafer chamfering apparatus, it is necessary to use a grindstone which is hard to lose its shape, since the processing shape precision of the chamfered wafer depends on the groove shape precision of the grindstone. For this reason, metal bond grindstones have been used in conventional wafer chamfering devices, but metal bond grindstones have the disadvantage that the grinding surface becomes rough.

[0004] Also, when using a metal-bonded grindstone, if the grindstone is made finer, it is easy to lose its shape. Therefore, a grindstone having a coarser grain size must be used, and as a result, the precision of the machined surface cannot be improved. There was a drawback of difficulty. Furthermore, in the conventional wafer chamfering device, even if the groove shape of the grinding wheel is partially broken, the grinding wheel has to be replaced at that stage, resulting in poor work efficiency and poor economic efficiency.

[0005] In addition, a grindstone must also use a grindstone with high groove shape accuracy, and there is a disadvantage that the price of the grindstone itself is high. The present invention has been made in view of such circumstances, and has as its object to provide a wafer chamfering method and apparatus capable of processing a wafer having an arbitrary chamfered shape with high accuracy.

[0006]

The invention according to claim 1 is
In order to achieve the above object, in a wafer chamfering method in which a peripheral edge of a rotating wafer is brought into contact with a peripheral surface of a rotating grindstone, and a peripheral edge of the wafer is chamfered into a predetermined shape, the wafer is orthogonal to a rotation axis of the wafer. The rotation axis of the grindstone formed into a cylindrical shape is arranged in the direction, the peripheral surface of the rotating grindstone is brought into contact with the periphery of the rotating wafer, and the wafer and the grindstone are relatively moved along the chamfered shape of the wafer. The peripheral edge of the wafer is chamfered into a predetermined shape.

According to the present invention, a cylindrical grindstone arranged orthogonally to the rotation axis of the wafer is brought into contact with the peripheral portion of the wafer, and the wafer is grinded along the chamfered shape of the wafer to be machined. Are relatively moved to chamfer the periphery of the wafer into a desired shape. Thereby, the periphery of the wafer can be chamfered into a desired shape without replacing the grindstone. Moreover, since the processing accuracy is hardly affected by the deformation of the grindstone, it is possible to use a resin-bonded grindstone and improve the processing surface accuracy.

According to a second aspect of the present invention, in order to achieve the above object, in the first aspect of the present invention, the wafer is chamfered while reciprocatingly moving the wafer and the grindstone along the axial direction of the grindstone. The method is characterized in that the wafer and the grindstone are relatively moved along a shape to chamfer the periphery of the wafer into a predetermined shape. According to the present invention, in the method of chamfering a wafer according to claim 1, the chamfering is performed while the wafer and the grindstone are relatively reciprocated along the axial direction of the grindstone. This can improve the surface accuracy and prevent uneven wear of the grindstone.

According to a third aspect of the present invention, in order to achieve the above object, a rotating fine grinding wheel is brought into contact with the periphery of a wafer whose periphery is rough-chamfered into a predetermined shape, and the periphery of the wafer is formed. In the wafer chamfering method for finish chamfering, a rotation axis of a grindstone formed in a cylindrical shape is arranged in a direction orthogonal to a rotation axis of the wafer, and a peripheral surface of the rotating fine grinding wheel is applied to a peripheral edge of the rotating wafer. Touching and relatively moving the wafer and the fine grinding wheel along the peripheral edge of the wafer to finish chamfering the peripheral edge of the wafer.

[0010] According to the present invention, a cylindrical refining grindstone arranged perpendicular to the rotation axis of the wafer is brought into contact with the peripheral edge of the wafer, and the fine polishing grindstone is aligned with the wafer along the peripheral edge of the wafer. The peripheral edge of the wafer is finish-chamfered by relatively moving the grinding wheel. Thus, the peripheral edge of the wafer can be finish-chamfered without replacing the grindstone. Further, since the processing accuracy is hardly affected by the deformation of the grindstone, it is possible to use a resin-bonded grindstone, and it is possible to further improve the processing surface precision.

According to a fourth aspect of the present invention, in order to achieve the above object, in the third aspect of the present invention, the wafer and the fine grinding wheel are reciprocated along the axial direction of the fine grinding wheel. The method is characterized in that the wafer and the fine grinding wheel are relatively moved along the periphery of the wafer to finish chamfering of the periphery of the wafer.

According to the present invention, in the method for chamfering a wafer according to claim 3, the chamfering is performed while the wafer and the grinding wheel are relatively reciprocated along the axial direction of the grinding wheel. This can improve the surface accuracy and prevent uneven wear of the grindstone. The invention according to claim 5 is a wafer chamfering apparatus for chamfering the peripheral edge of the wafer into a predetermined shape by bringing the peripheral edge of the rotating wafer into contact with the peripheral surface of the rotating grindstone to achieve the object, A wafer table that holds and rotates a wafer, a wafer table moving unit that moves the wafer table in an axial direction and a direction orthogonal to the axial direction, and a grindstone arranged to be orthogonal to the rotation axis of the wafer table A spindle, and a cylindrical grindstone that is mounted on the grindstone spindle and rotates. The wafer table moving means moves the wafer table toward the grindstone, and rotates the periphery of the rotating wafer. Abutting the wafer table along the chamfered shape of the wafer Ri, characterized by chamfering the peripheral edge of the wafer into a predetermined shape.

According to the present invention, a cylindrical grindstone arranged perpendicular to the axis of rotation of the wafer is brought into contact with the peripheral edge of the wafer, and the wafer is ground along the chamfered shape of the wafer to be machined. Are relatively moved to chamfer the periphery of the wafer into a desired shape. Thereby, the periphery of the wafer can be chamfered into a desired shape without replacing the grindstone. Moreover, since the processing accuracy is hardly affected by the deformation of the grindstone, it is possible to use a resin-bonded grindstone and improve the processing surface accuracy.

According to a sixth aspect of the present invention, there is provided a wafer chamfer in which a peripheral edge of a rotating grindstone is brought into contact with a peripheral edge of a rotating wafer to chamfer the peripheral edge of the wafer into a predetermined shape. In the apparatus, a wafer table that holds and rotates a wafer, a wafer table moving unit that moves the wafer table in an axial direction and a direction orthogonal to the axial direction, and is arranged in parallel with the rotation axis of the wafer table. A grinding wheel spindle for rough grinding,
The rough grinding wheel, which is mounted on the rough grinding wheel spindle and rotates to form a grinding groove having a predetermined cross-sectional shape on the peripheral surface, and a fine grinding wheel arranged perpendicular to the rotation axis of the wafer table. A grinding wheel spindle, and a cylindrical fine grinding wheel that is mounted on the grinding wheel spindle and rotates.The wafer table moving means moves the wafer table toward the rough grinding wheel, and rotates. After the peripheral edge of the wafer is brought into contact with a grinding groove formed on the peripheral surface of the grinding wheel for rough grinding, the peripheral edge of the wafer is chamfered into a predetermined shape, and then the wafer table is moved by the wafer table moving means. Moving toward the grinding wheel, the peripheral edge of the rotating wafer is brought into contact with the peripheral surface of the rotating grinding wheel, and is moved along the peripheral edge of the wafer. By moving the wafer table, characterized by chamfering finishing periphery of the wafer.

According to the present invention, after the peripheral edge of the wafer is chamfered into a predetermined cross-sectional shape by a roughening grindstone arranged in parallel with the rotation axis of the wafer, the wafer is arranged perpendicular to the rotation axis of the wafer. The edge of the wafer is finish-chamfered by the refined grinding wheel. Thereby, rough chamfering and finishing chamfering can be performed at once, and the production efficiency is improved. Further, since rough chamfering and finish chamfering are performed while holding the wafer on the same wafer table, misalignment due to transfer of the wafer table is eliminated, and highly accurate chamfering becomes possible.

According to a seventh aspect of the present invention, in order to achieve the above object, in the invention according to the fifth or sixth aspect, the wafer chamfering device comprises a notch arranged parallel to a rotation axis of the wafer table. A grinding wheel spindle, and a notch grinding wheel, which is mounted on the notch grinding wheel spindle and rotates to form a grinding groove having a predetermined cross-sectional shape on the peripheral surface,
By moving the wafer table toward the notch grindstone by the wafer table moving means, by contacting the notch portion of the wafer to a grinding groove formed on the peripheral surface of the rotating notch grindstone, The notch of the wafer is chamfered.

According to the present invention, in the wafer chamfering apparatus according to claim 5 or 6, a notch grindstone is provided. Thereby, even for a notched wafer, the circular portion and the notched portion of the wafer can be chamfered by the same apparatus. Thereby, the production efficiency can be improved. Further, since the circular portion and the notch portion are chamfered while the wafer is held on the same wafer table, there is no misalignment due to the transfer of the wafer table, and highly accurate chamfering can be performed.

According to an eighth aspect of the present invention, in order to achieve the above object, in the invention according to the sixth aspect, the fine grinding wheel is formed to have a smaller diameter than the rough grinding wheel. Features. According to the present invention, in the wafer chamfering device according to claim 6, the fine grinding wheel is formed to have a smaller diameter than the rough grinding wheel. Since the grinding wheel for fine polishing is used for finish chamfering, it is necessary to suppress vibration as much as possible. Therefore, by reducing the diameter, the generation of vibration can be effectively prevented. As a result, surface accuracy can be improved. On the other hand, rough grinding wheels
Since it is used for rough chamfering, there is no problem even if some vibration occurs. Therefore, by using a grindstone having a large diameter, the life of the grindstone can be extended.

According to a ninth aspect of the present invention, in order to achieve the above object, a wafer table holding and rotating a wafer, and a wafer table moving means for moving the wafer table in an axial direction and a direction orthogonal to the axial direction. And a grindstone spindle arranged orthogonal to the rotation axis of the wafer table, and a cylindrical grindstone that is mounted on the grindstone spindle and rotates, and the wafer table moving means moves the wafer table. Moving toward the grindstone, the peripheral edge of the rotating wafer is brought into contact with the peripheral surface of the rotating grindstone, and the wafer table is moved along the chamfered shape of the wafer, so that the peripheral edge of the wafer is in a predetermined shape. In the wafer chamfering method of the wafer chamfering apparatus for chamfering,
Setting the position of the rotation axis of the wafer table with respect to the rotation axis of the whetstone, moving the wafer table to the set position, chamfering the periphery of the wafer, measuring the diameter of the chamfered wafer, chamfering The setting position of the wafer table is corrected so that the diameter of the processed wafer becomes a target value.

According to the present invention, the processing position of the wafer table is corrected based on the diameter of the processed wafer. Thereby, even if the grindstone is worn, the wafer can be chamfered with high accuracy at all times.
The invention according to claim 10 is to achieve the above object,
A wafer table that holds and rotates a wafer, a wafer table moving unit that moves the wafer table in an axial direction and a direction orthogonal to the axial direction, and a grindstone arranged to be orthogonal to the rotation axis of the wafer table A spindle, and a cylindrical grindstone that is mounted on the grindstone spindle and rotates. The wafer table moving means moves the wafer table toward the grindstone, and rotates the periphery of the rotating wafer. In contact with the surface, by moving the wafer table along the chamfering shape of the wafer, in a wafer chamfering method of a wafer chamfering device that chamfers the periphery of the wafer into a predetermined shape, the wafer with respect to the rotation axis of the whetstone Set the position of the rotation axis of the wafer table and set The wafer table is moved to a position, the periphery of the wafer is chamfered, the surface width of the chamfered wafer is measured, and the surface width of the chamfered wafer is set to a target value. It is characterized in that the set position is corrected.

According to the present invention, the processing position of the wafer table is corrected based on the surface width of the processed wafer. Thereby, even if the grindstone is worn, the wafer can be chamfered with high accuracy at all times.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a wafer chamfering method and apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. 1 and 2 show a wafer chamfering apparatus 1 to which a wafer chamfering method according to the present invention is applied, respectively.
0A and 1B are a side view and a plan view showing the configuration of the first embodiment.

As shown in FIG. 1, the wafer W is attracted and held by the wafer table 20 and rotates. Then, the peripheral edge of the rotating wafer W is brought into contact with the peripheral surface of the grindstone 30 formed in a cylindrical shape, whereby the peripheral edge of the wafer W is chamfered. Here, the wafer table 2
Numeral 0 is connected to an output shaft of a motor (not shown), and is rotated by driving this motor. The motor is provided on moving means (not shown), and by driving the moving means, the wafer table 20 is moved.
Move in three directions of x, y, and z in the figure.

On the other hand, the grindstone 30 is fixed at a fixed position. The grindstone 30 is mounted on a grindstone spindle 32 and is rotated by driving a grindstone motor 34 to which the grindstone spindle 32 is connected. Here, as shown in FIGS. 1 and 2, the grindstone 30 is disposed so that its rotation axis γ is orthogonal to the rotation axis θ of the wafer table 20. Are arranged along the y-axis direction in the figure.

Next, a wafer chamfering method according to the present invention will be described. The wafer chamfering method according to the present invention,
By contacting the peripheral surface of the rotating grindstone 30 with the peripheral edge of the rotating wafer W and moving the wafer W along the chamfered shape of the wafer to be processed, the peripheral edge of the wafer W is processed into a predetermined chamfered shape. General wafer W
There are three types of chamfer shapes as shown in FIG. That is, a type having a triangular cross section as shown in FIG. 1A, a type having a trapezoidal cross section as shown in FIG. 2B, and a type having a trapezoidal cross section as shown in FIG. Of a semi-circular cross section.

First, as shown in FIG.
A case in which the periphery of is chamfered into a triangular cross section will be described. As shown in FIG. 4, the inclination angle of the chamfered surface of the wafer W to be processed is α. Then, the point of the upper end portion of the upper chamfered surface and P _1, the point of the lower end and P _2. Also,
The point of the upper end portion of the lower beveled surface and P _3, the point of the lower end portion P
_{And 4} .

Further, in the grinding wheel 30, drawing a parallel with the straight line and the rotation axis θ of the wafer W from the rotational center G _O of the grinding wheel, to the point at which the straight line intersects the outer periphery of the grinding wheel 30 A, and E.
Further, a straight line is drawn perpendicular from the rotation center G _O of the grinding wheel with the rotational axis θ of the wafer W, to the point where the straight line intersects the outer periphery of the grinding wheel 30 and C. Then, the wafer W from a straight line G _O A
A point obtained by the rotation alpha ° to the rotation axis θ side is B, straight line G _O E
D is a point rotated by α ° to the rotation axis θ side of the wafer W.

As shown in FIGS. 1 and 2, in an initial state, the wafer table 20 is located at the origin position.
That is, the rotation axis θ is x from the rotation axis γ of the grindstone 30.
Located axially position a predetermined distance X _O, also, its axis of rotation θ is positioned at a position of a predetermined from the center of the width direction of the grinding wheel 30 in the y-axis direction by a distance Y _O (Y _O = 0) ing. The upper surface S is located at the same height as the rotation axis γ of the grindstone 30.

The wafer W is stored in the wafer table 20.
It is placed on top with its axis aligned. Then, in this state, the rotation center W _O of the wafer W is
Is located at a predetermined distance X _{O in} the x-axis direction from the rotation axis γ, and at a predetermined distance Y _O (Y _O = 0) in the y-axis direction from the center in the width direction of the grindstone 30. First, FIG.
As shown in, the wafer table 20 by a predetermined distance Z falls, a point P ₁ on the wafer W is positioned at the position of the same height as the point B on the grinding wheel 30.

At this time, the upper surface S of the wafer table 20 is moved from the rotation axis γ of the grindstone 30 in the z-axis direction.

[0031]

## EQU1 ## Z _P1 = − (T + G _r × cos α) (1) T: thickness of wafer W _Gr : radius of grindstone

Next, the grindstone motor 34 is driven to rotate the grindstone 30, and the motor (not shown) is driven to rotate the wafer W. Next, the wafer table 20
Moves toward the grindstone 30 in the x-axis direction. When the wafer table 20 moves a predetermined distance, the outer peripheral surface of the grindstone 30 contacts the peripheral edge of the wafer W. After the contact, the wafer table 20 continues to move, and as a result, the periphery of the wafer W is ground by the grindstone 30.

The wafer table 20 moved in the x-axis direction
As shown in FIG. 6A, the point P ₁ on the wafer W is
When reaching point B on the grindstone 30, the movement is temporarily stopped.
At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0034]

X _P1 = W _r1 + G _r × sin α (2) W _r1 : It is located at a distance from the rotation center W _{O of the} wafer W to the point P ₁ . The wafer table 20 then moves obliquely upward with the inclination angle α (moves obliquely upward to the right in FIG. 6A). Then, as shown in FIG. 6 (b), the point P ₂ on the wafer W reaches the point B on the grinding wheel 30, temporarily stops the movement. As a result, as shown in the figure, the peripheral portion of the wafer W is ground by the grindstone 30 to form an upper chamfered surface.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0036]

X _P2 = W _r2 + G _r × sin α (3) W _r2 : Located at a distance from the rotation center W _{O of the} wafer W to the point P ₂ , and the upper surface S of the wafer table 20
Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0037]

## EQU4 ## Z _P2 = − (T _P2 + G _r × cos α) (4) T _P2 : Located at a distance from the upper surface of the wafer table to point P ₂ . The wafer table 20 then moves so as to draw an arc along the peripheral surface of the grindstone 30. Then, as shown in FIG.
_{When 3} reaches the point D on the grindstone 30, the movement is temporarily stopped. As a result, as shown in the figure, the peripheral portion of the wafer W is ground by the grindstone 30 to form a tip radius.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0039]

X _P3 = W _r3 + G _r × sin α (5) W _r3 : Located at a distance from the rotation center W _{O of the} wafer W to the point P ₃ , and the upper surface S of the wafer table 20
Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0040]

(6) T _P3 = −T _P3 + G _r × cos α (6) T _P3 : Located at a distance from the upper surface of the wafer table to point P ₃ . The wafer table 20 then moves diagonally upward with the inclination angle α (moves diagonally left and up in FIG. 6C). Then, as shown in FIG. 6D, the point P ₄ on the wafer W is
When it reaches, it stops moving. As a result, as shown in the figure, the periphery of the wafer W is ground by the grindstone 30,
A lower chamfer is formed.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0042]

X _P4 = W _r4 + G _r × sin α (7) W _r4 : Located at a distance from the rotation center W _{O of the} wafer W to the point P ₄ , and the upper surface S of the wafer table 20
Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0043]

## EQU8 ## Z _P4 = G _r × cos α (8) With the above, the chamfering of the peripheral portion of the wafer W is completed. The wafer table 20
Thereafter, it moves in a direction away from the grindstone 30 along the x-axis direction, and returns to the origin position.

As described above, according to the wafer chamfering method of the present embodiment, the wafer W
Can be chamfered into a triangular cross section.
Next, as shown in FIG. 3B, a case where the periphery of the wafer W is chamfered into a trapezoidal cross section will be described. As shown in FIG. 7, the inclination angle of the chamfered surface of the wafer W to be processed is α. Then, the point of the upper end portion of the upper chamfered surface and P _1, the point of the lower end and P _2. Also, the point at the upper end of the front chamfer is P ₃ , the point at the lower end is P ₄ , the point at the upper end of the lower chamfer is P ₅ , and the point at the lower end is P ₆ .

Further, in the grinding wheel 30, drawing a parallel with the straight line and the rotation axis θ of the wafer W from the rotational center G _O of the grinding wheel, to the point at which the straight line intersects the outer periphery of the grinding wheel 30 A, and E.
Further, a straight line is drawn perpendicular from the rotation center G _O of the grinding wheel with the rotational axis θ of the wafer W, to the point where the straight line intersects the outer periphery of the grinding wheel 30 and C. Then, the wafer W from a straight line G _O A
A point obtained by the rotation alpha ° to the rotation axis θ side is B, straight line G _O E
D is a point rotated by α ° to the rotation axis θ side of the wafer W.

As described above, in the initial state, the wafer W
Is located at the origin position. First, the wafer table 20 by a predetermined distance Z falls, a point P ₁ on the wafer W is positioned at the position of the same height as the point B on the grinding wheel 30 (see FIG. 5). Next, the grindstone motor 34 is driven to rotate the grindstone 30, and the motor (not shown) is driven to rotate the wafer W.

Next, the wafer table 20 moves toward the grindstone 30 in the x-axis direction. When the wafer table 20 moves a predetermined distance, the outer peripheral surface of the grindstone 30 contacts the peripheral edge of the wafer W. After the contact, the wafer table 20 continues to move, and as a result, the periphery of the wafer W is ground by the grindstone 30. The wafer table 20 moved in the x-axis direction
As shown in FIG. 8A, the point P ₁ on the wafer W is
When reaching point B on the grindstone 30, the movement is temporarily stopped.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0049]

X _P1 = W _r1 + G _r × sin α (9) W _r1 : Located at a distance from the rotation center W _{O of the} wafer W to the point P ₁ , and the upper surface S of the wafer table 20 Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0050]

Z _P1 = − (T + G _r × cos α) (10) T: Located at the position of the thickness of the wafer W. The wafer table 20 then moves diagonally upward with the inclination angle α (moves diagonally right upward in FIG. 8A). Then, as shown in FIG. 8 (b), the point P ₂ on the wafer W reaches the point B on the grinding wheel 30, temporarily stops the movement. As a result, as shown in FIG.
Is ground on the grindstone 30 to form an upper chamfered surface.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0052]

X _P2 = W _r2 + G _r × sin α (11) W _r2 : located at a distance from the rotation center W _{O of the} wafer W to the point P ₂ , and the upper surface S of the wafer table 20
Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0053]

Z _P2 = − (T _P2 + G _r × cos α) (12) T _P2 : Located at a distance from the upper surface of the wafer table to point P ₂ . The wafer table 20 then moves so as to draw an arc along the peripheral surface of the grindstone 30. Then, as shown in FIG.
_{When 3} reaches the point D on the grindstone 30, the movement is temporarily stopped. As a result, as shown in the figure, the peripheral edge of the wafer W is ground by the grindstone 30 to form a tip upper radius.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0055]

X _P3 = W _r3 + G _r (13) W _r3 : Located at a distance from the rotation center W _{O of the} wafer W to the point P ₃ , and the upper surface S of the wafer table 20
Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0056]

Equation 14] _{Z P3 = -T P3 ... (14} ) T P3: are located at a distance from the upper surface of the wafer table to the point P _3. The wafer table 20 then rises along the z-axis. Then, as shown in FIG. 8 (d), the point P ₄ on the wafer W reaches the point C on the grinding wheel 30, temporarily stops the movement. As a result, as shown in the figure, the peripheral portion of the wafer W is ground by the grindstone 30 to form a chamfered end.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0058]

X _P4 = W _r4 + G _r (15) W _r4 : Located at a distance from the rotation center W _{O of the} wafer W to the point P ₄ , and the upper surface S of the wafer table 20
Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0059]

Equation 16] _{Z P4 = -T P4 ... (16} ) T P4: is located at a distance from the upper surface of the wafer table to the point P _4. The wafer table 20 then moves so as to draw an arc along the peripheral surface of the grindstone 30. Then, as shown in FIG.
_{When 5} reaches the point D on the grindstone 30, the movement is temporarily stopped. As a result, as shown in the figure, the peripheral portion of the wafer W is ground by the grindstone 30 to form a lower end radius.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0061]

X _P5 = W _r5 + G _r × sin α (17) W _r5 is located at a distance from the rotation center W _{O of the} wafer W to the point P ₅ , and the upper surface S of the wafer table 20.
Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0062]

(18) Z _P5 = −T _P5 + G _r × cos α (18) T _P5 : Located at a distance from the upper surface of the wafer table to point P ₅ . The wafer table 20 then moves diagonally upward with the inclination angle α (moves diagonally upward to the left in FIG. 8E). Then, as shown in FIG. 8F, a point P ₆ on the wafer W is
When it reaches, it stops moving. As a result, as shown in the figure, the periphery of the wafer W is ground by the grindstone 30,
A lower chamfer is formed.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0064]

X _p6 = W _r6 + G _r × sin α (19) W _r6 : Located at a distance from the rotation center W _{O of the} wafer W to the point P ₆ , and the upper surface S of the wafer table 20
Is from the rotation axis γ of the grindstone 30 in the z-axis direction,

[0065]

(20) Z _P6 = G _r × cos α (20) With the above, the chamfering of the peripheral portion of the wafer W is completed. The wafer table 20
Thereafter, it moves in a direction away from the grindstone 30 along the x-axis direction, and returns to the origin position.

As described above, according to the wafer chamfering method of the present embodiment, the wafer W
Can be chamfered into a trapezoidal cross section. Next, a case where the periphery of the wafer W is chamfered in a semicircular shape as shown in FIG. As shown in FIG. 9, the point of the upper end portion of the chamfered surface to be machined and P _1, the point of the lower end and P _2.

In the grindstone 30, straight lines are drawn from the center of rotation G _O of the grindstone in parallel with the rotation axis θ of the wafer W, and points A and E at which the straight lines intersect with the outer periphery of the grindstone 30 are defined.
Further, a straight line is drawn perpendicular from the rotation center G _O of the grinding wheel with the rotational axis θ of the wafer W, to the point where the straight line intersects the outer periphery of the grinding wheel 30 and C. As described above, in the initial state, the wafer W is located at the origin position. First, the wafer table 20 is moved down by a predetermined distance Z to a point P ₁ on the wafer W.
Is located at the same height as point B on the grindstone 30 (FIG. 5).
reference).

Next, the grindstone motor 34 is driven to rotate the grindstone 30, and the motor (not shown) is driven to rotate the wafer W. Next, the wafer table 20
Moves toward the grindstone 30 in the x-axis direction. When the wafer table 20 moves a predetermined distance, the outer peripheral surface of the grindstone 30 contacts the peripheral edge of the wafer W. After the contact, the wafer table 20 continues to move, and as a result, the periphery of the wafer W is ground by the grindstone 30.

The wafer table 20 moved in the x-axis direction
Is the point P on the wafer W as shown in FIG.
_{When 1} reaches the point B on the grindstone 30, the movement is temporarily stopped. At this time, the rotation axis θ of the wafer table 20
Is in the x-axis direction from the rotation axis γ of the grindstone 30,

[0070]

X _P1 = W _r1 (21) W _r1 is located at a distance from the rotation center W _{O of the} wafer W to the point P ₁ , and the upper surface S of the wafer table 20 is In the z-axis direction from the rotation axis γ of

[0071]

Z _P1 = − (T + G _r ) (22) T: Located at the position of the thickness of the wafer W. The wafer table 20 then moves so as to draw an arc along the peripheral surface of the grindstone 30. Then, as shown in FIG. 10B, when the point P ₂ on the wafer W reaches the point E on the grindstone 30, the movement is stopped. As a result, as shown in the figure, the peripheral portion of the wafer W is ground by the grindstone 30 and chamfered into a semicircular shape.

At this time, the rotation axis θ of the wafer table 20 is shifted from the rotation axis γ of the grindstone 30 in the x-axis direction.

[0073]

X _P2 = W _r2 (23) W _r2 is located at a distance from the rotation center W _{O of the} wafer W to the point P ₂ , and the upper surface S of the wafer table 20 is In the z-axis direction from the rotation axis γ of

[0074]

## _EQU24 ## Z _P2 = G _r (24) With the above, the chamfering of the peripheral portion of the wafer W is completed. The wafer table 20
Thereafter, it moves in a direction away from the grindstone 30 along the x-axis direction, and returns to the origin position.

As described above, according to the wafer chamfering method of the present embodiment, the wafer W
Can be chamfered into a semicircular cross section.
As described above, according to the wafer chamfering method of the present embodiment, the peripheral edge of the wafer W can be chamfered into a desired shape using the cylindrical grindstone 30. Therefore, even when the chamfered shape of the wafer W is changed, it is not necessary to replace the grindstone 30, thereby improving the productivity.

In the above embodiment, the wafer W
Described in the example of processing the periphery of the desired chamfered shape,
As described below, the present invention can also be applied to the case where the wafer W that has been rough-chamfered to a predetermined chamfer shape is finish-chamfered. First, as shown in FIG. 3 (a), a description will be given of a case where a finish chamfering process is performed on a wafer W whose peripheral edge has been rough-chamfered into a triangular cross section.

Basically, the wafer is moved along the shape of the peripheral portion of the wafer while the peripheral edge of the wafer is in contact with the rotating grindstone, so that the previously formed chamfered surface is finish-chamfered. At the time of processing, a fine grinding whetstone 30F formed in a cylindrical shape is used as the whetstone. The same chamfering device 10 as described above is used.

In the initial state, the wafer W 'is located at the origin position. First, the wafer table 20 is lowered by the predetermined distance Z, and the point P ₁ ′ on the wafer W ′ is located at the same height as the point B on the fine grinding wheel 30F. next,
The grindstone motor 34 is driven to rotate the fine grinding grindstone 30F, and the motor (not shown) is driven to rotate the wafer W '.

Next, the wafer table 20 moves in the x-axis direction toward the fine grinding wheel 30F. When the wafer table 20 moves a predetermined distance, the outer peripheral surface of the grinding wheel 30F comes into contact with the peripheral edge of the wafer W '. After the contact, the wafer table 20 continues to move, and as a result, the wafer W ′
Is ground to a grinding wheel for fine grinding 30F. As shown in FIG. 11A, the wafer table 20 moved in the x-axis direction has a point P ₁ ′ (a point at the upper end of the upper chamfered surface after finish chamfering) on the wafer W ′ When the point B on the working grindstone 30F is reached, the movement is temporarily stopped.

The wafer table 20 then moves obliquely upward with the same inclination angle α as the inclination angle α of the chamfered surface formed at the peripheral edge of the wafer W ′ (FIG. 11A).
In, move diagonally upward to the right. ). And FIG.
As shown in (b), when the point P ₂ ′ (the lower end point of the upper chamfered surface after the finish chamfering) on the wafer W ′ reaches the point B on the fine grinding wheel 30F, the movement is stopped. Stop once.
As a result, as shown in the figure, the upper chamfered surface formed on the peripheral edge of the wafer W 'is finish chamfered by the fine grinding whetstone 30F.

Next, the wafer table 20 moves so as to draw an arc along the peripheral surface of the fine grinding wheel 30F. Then, as shown in FIG. 11C, the point P on the wafer W '
₃ '(point at the upper end of the lower chamfer after finishing chamfering)
However, when it reaches a point D on the grinding wheel for fine grinding 30F, the movement is temporarily stopped. As a result, as shown in the figure, the tip radius formed on the peripheral portion of the wafer W 'is finish-chamfered by the fine grinding wheel 30F.

The wafer table 20 then moves obliquely upward with the same inclination angle α as the inclination angle α of the chamfered surface formed on the peripheral portion of the wafer W ′ (FIG. 11C).
In, move diagonally upward and left. ). And FIG.
As shown in (d), when the point P ₄ ′ on the wafer W ′ (the point at the lower end of the lower chamfered surface after the finish chamfering) reaches the point D on the fine grinding wheel 30F, the movement is stopped. Stop. As a result, as shown in the figure, the lower chamfered surface formed on the peripheral edge of the wafer W 'is finish-chamfered to the fine grinding wheel 30F.

As described above, the chamfered surface of the wafer W ′ is
All finish chamfering. Wafer table 20
Thereafter, moves in a direction away from the grindstone 30 along the x-axis direction, and returns to the origin position. As described above, according to the wafer chamfering method of the present embodiment, it is possible to finish chamfering the wafer W ′ whose peripheral edge is roughly chamfered into a triangular cross section, using the cylindrical grinding wheel 30F. it can.

In the above processing, the grinding wheel 3 for fine polishing was used.
The position of the wafer table 20 with respect to the rotation axis γ of 0F is substantially the same as the case of forming a chamfered surface having a triangular cross section using the above-described grindstone 30. That is, in the above formulas (1) to (8), the position of the wafer table 20 in the processing according to the present embodiment can be obtained by adding 'to the corresponding symbol.

Next, as shown in FIG. 3 (b), a description will be given of the case where the wafer W whose peripheral edge has been rough-chamfered into a trapezoidal cross section is finish-chamfered. In the initial state, the wafer W 'is located at the origin position. First, the wafer table 20 descends by a predetermined distance Z, and the wafer W ′
The upper point P ₁ ′ (the point at the upper end of the upper chamfered surface after finish chamfering) is located at the same height as the point B on the fine grinding wheel 30F (see FIG. 5).

Next, the grinding wheel motor 34 is driven to rotate the fine grinding wheel 30F, and the motor (not shown) is driven to rotate the wafer W '. Next, the wafer table 20 moves in the x-axis direction toward the fine grinding grindstone 30F. When the wafer table 20 moves a predetermined distance,
The outer peripheral surface of the fine grinding wheel 30F is in contact with the peripheral edge of the wafer W '. After the contact, the wafer table 20 continues to move,
As a result, the peripheral portion of the wafer W 'is ground to the fine grinding wheel 30F.

The wafer table 20 moved in the x-axis direction
Is a point P ₁ ′ on the wafer W ′ as shown in FIG.
However, when it reaches the point B on the fine grinding wheel 30F, the movement is temporarily stopped. The wafer table 20 then moves obliquely upward at the same inclination angle α as the inclination angle α of the chamfered surface formed at the peripheral portion of the wafer W ′ (FIG. 12A).
In, move diagonally upward to the right. ). And FIG.
As shown in (b), when the point P ₂ ′ (the lower end point of the upper chamfered surface after the finish chamfering) on the wafer W ′ reaches the point B on the fine grinding wheel 30F, the movement is stopped. Stop once.
As a result, as shown in the figure, the upper chamfered surface formed on the peripheral portion of the wafer W 'is finish chamfered by the fine grinding whetstone 30F.

The wafer table 20 then moves so as to draw an arc along the peripheral surface of the fine grinding wheel 30F. Then, as shown in FIG. 12C, the point P on the wafer W '
₃ '(point at the upper end of the chamfered surface after finishing chamfering)
However, when it reaches a point D on the grinding wheel for fine grinding 30F, the movement is temporarily stopped. As a result, as shown in the figure, the upper end radius formed at the peripheral portion of the wafer W 'is finish-chamfered to the fine grinding wheel 30F.

The wafer table 20 then rises along the z-axis. Then, as shown in FIG. 12 (d), when the point P ₄ ′ (the point at the lower end of the chamfered surface after the finish chamfering) on the wafer W ′ reaches the point C on the grinding wheel 30F for fine polishing. , Stop the movement once. As a result, as shown in the figure, the front chamfered surface formed on the peripheral portion of the wafer W 'is finish-chamfered to the fine grinding wheel 30F.

Next, the wafer table 20 moves so as to draw an arc along the peripheral surface of the fine grinding wheel 30F. Then, as shown in FIG. 12 (e), the point P on the wafer W '
₅ '(top point of the lower chamfer after finishing chamfering)
However, when it reaches a point D on the grinding wheel for fine grinding 30F, the movement is temporarily stopped. As a result, as shown in the figure, the lower end of the tip formed on the peripheral edge of the wafer W 'is finish-chamfered to the grinding wheel 30F for fine polishing.

Next, the wafer table 20 moves obliquely upward with the same inclination angle α as the inclination angle α of the chamfered surface formed at the peripheral portion of the wafer W ′ (FIG. 12E).
In, move diagonally upward and left. ). And FIG.
As shown in (f), when the point P ₆ ′ on the wafer W ′ (the point at the lower end of the lower chamfered surface after finishing chamfering) reaches the point D on the fine grinding wheel 30F, the movement is stopped. Stop. As a result, as shown in the figure, the lower chamfered surface formed on the peripheral edge of the wafer W 'is finish chamfered by the fine grinding whetstone 30F.

As described above, the chamfered surface of the wafer W ′ is
All finish chamfering. Wafer table 20
Thereafter, moves in a direction away from the grindstone 30 along the x-axis direction, and returns to the origin position. As described above, according to the wafer chamfering method of the present embodiment, it is possible to finish chamfering the wafer W ′ whose peripheral edge is roughly chamfered into a trapezoidal cross section using the cylindrical fine grinding wheel 30F. it can.

In the above processing, the grinding wheel 3 for fine polishing was used.
The position of the wafer table 20 with respect to the rotation axis γ of 0F is substantially the same as the case where the chamfered surface having the trapezoidal cross section is formed using the grinding wheel 30 described above. That is, in the above equations (9) to (20), the position of the wafer table 20 in the processing according to the present embodiment can be obtained by adding 'to the corresponding symbol.

Next, as shown in FIG. 3 (c), a case will be described in which the wafer W 'whose peripheral edge has been rough-chamfered to have a semicircular cross section is finish-chamfered. In the initial state, the wafer W 'is located at the origin position. First,
The wafer table 20 is lowered by the predetermined distance Z, and the point P ₁ ′ (the point at the upper end of the chamfered surface after the finish chamfering) on the wafer W ′ is at the same height as the point B on the fine grinding wheel 30F. (See FIG. 5).

Next, the grinding wheel motor 34 is driven to rotate the fine grinding wheel 30F, and the motor (not shown) is driven to rotate the wafer W '. Next, the wafer table 20 moves in the x-axis direction toward the fine grinding grindstone 30F. When the wafer table 20 moves a predetermined distance,
The outer peripheral surface of the fine grinding wheel 30F is in contact with the peripheral edge of the wafer W '. After the contact, the wafer table 20 continues to move,
As a result, the peripheral portion of the wafer W 'is ground to the fine grinding wheel 30F.

The wafer table 20 moved in the x-axis direction
Is a point P ₁ on the wafer W ′ as shown in FIG.
However, when it reaches the point B on the fine grinding wheel 30F, the movement is temporarily stopped. The wafer table 20 then moves so as to draw an arc along the peripheral surface of the grinding wheel for fine grinding 30F. Then, as shown in FIG. 13 (b), a point P on the wafer W '
₂ '(the point at the lower end of the chamfered surface after finishing chamfering)
When the point E on the fine grinding wheel 30F is reached, the movement is stopped. As a result, as shown in the figure, the semi-circular chamfered surface formed on the peripheral edge of the wafer W '
Finished chamfering by 0F.

As described above, the chamfered surface of the wafer W ′ is
All finish chamfering. Wafer table 20
Thereafter, moves in a direction away from the grindstone 30 along the x-axis direction, and returns to the origin position. In the above-mentioned processing, the position of the wafer table 20 with respect to the rotation axis γ of the grinding wheel for fine grinding 30F is substantially the same as the case where the chamfered surface having a semicircular cross section is formed using the grinding wheel 30 described above. That is, in the above equations (21) to (24), the position of the wafer table 20 in the processing according to the present embodiment can be obtained by adding 'to the corresponding symbol.

As described above, according to the wafer chamfering method of the present embodiment, the cylindrical grinding wheel 30F is used.
Finish chamfering can be performed on the wafer W ′ whose periphery is rough chamfered into a semicircular cross section. As described above, according to the wafer chamfering method of the present embodiment, the wafer W 'whose peripheral edge is preliminarily rough-chamfered to a predetermined shape is finish-chamfered using the cylindrical grinding wheel 30F. be able to. Thus, even in the case of finishing chamfering a wafer W ′ having a different rough chamfered shape, it is not necessary to replace the fine grinding wheel 30F, and the throughput can be improved. Also,
By performing rough chamfering in advance, it is possible to process a wafer with high surface accuracy while effectively preventing wear of the grindstone.

In the above series of embodiments, the grinding wheel side is fixed and the wafer side is moved to perform a predetermined chamfering process. However, the wafer side is fixed and the grinding wheel side is moved. You may. Further, both the grindstone side and the wafer side may be moved. Further, in the above-described series of embodiments, during processing, the wafer is moved only in the x-axis direction or the z-axis direction to perform desired processing, but is reciprocated in the y-axis direction as follows. It may be processed while processing.

That is, as shown in FIG.
The above-described chamfering of the wafer W is performed while the wafer W is reciprocated in the direction along the rotation axis γ of the grindstone 30 (y-axis direction). Thereby, the extreme load is reduced, and the grindstone is evenly worn. This also increases the number of abrasive grains acting on the chamfered surface of the wafer W, and improves the surface accuracy of the ground surface by averaging the acting abrasive grains.

The speed at which the wafer W is reciprocated is arbitrary, and the number of times is not particularly limited. One reciprocation, 0.5 reciprocation, or a plurality of reciprocations may be performed in one processing. The most effective speed and number of times are set according to the surface accuracy of the processed wafer W. In the present embodiment, the grindstone to be used is not particularly limited, but it is preferable to use a resin-bonded grindstone as the fine grinding whetstone 30F used at the time of finish chamfering. This is because the resin-bonded grindstone has an advantage that the elasticity of the resin-bonded grindstone is less likely to give an impact to the processed surface and the precision of the ground surface is high.

Further, in the present embodiment, the rotation speed of the wafer W and the grindstone 30 is not particularly limited, but the wafer W is 30 [m / min] or more,
Is preferably set to a speed of 1000 [m / min] or more. Also in this regard, the most effective speed is set according to the surface accuracy of the processed wafer W and the like. By the way, the grindstone 30 is worn by repeated grinding. And the diameter of the grindstone 30 becomes small by abrasion.
As a result, the positions of points A to E on the grindstone 30 change.

On the other hand, the processing is performed automatically, and the positions of points A to E on the grinding wheel 30 and the wafer W
The movement of the wafer W is controlled based on the positions of the points P ₁ to P ₆ above. Therefore, the points A to E on the grindstone 30
Has a problem that it is not possible to process the wafer W into a desired chamfered shape.

Then, the processing position is corrected as follows. That is, after chamfering the wafer W, the diameter of the chamfered wafer W is measured, and the radius of the grindstone 30 is obtained from the measurement result to correct the processing position. The details are as follows. The radius of the grindstone before use is _defined as G _rO . Then, the diameter of the wafer W in the case where chamfering in this grindstone and W _L1.

The grinding wheel is worn by the processing, and its radius is G
_Suppose that it becomes _r1 . Then, the diameter of the wafer W in the case where chamfering in this worn grinding and W _L2.
When the wafer W is chamfered while being controlled by the same moving amount, the difference in diameter after the processing occurs because the grindstone is worn. The amount of wear of the grindstone is the diameter W of the wafer W when chamfering is performed with a grindstone without wear.
_L1 and wafer W when chamfering with worn whetstone
_Is equal to half of the difference from the diameter WL2. That is, the amount of wear Δr of the grindstone is

[0106]

Δr = (W _L2 −W _L1 ) / 2 Therefore, the radius G _r1 of the worn wheel is

[0107]

G _r1 = G _rO − (W _L2 −W _L1 ) / 2 Therefore, by substituting the calculated radius G _{r1 of} the grindstone into the above equations (1) to (24), each processing position can be corrected to an accurate position. Then, if the movement of the wafer table 20 is controlled based on the corrected processing position, the wafer W can always be chamfered to a desired shape with high precision even when the grindstone is worn.

In the case of chamfering a wafer T having a thickness T _O and then chamfering a wafer W having a thickness T, in order to chamfer the wafer W having the thickness T to a desired surface width, The following correction is performed. That is, FIG.
As shown in 5, the wafer W having a thickness of T _O after chamfering, top and bottom surfaces the width W _UM of the wafer W in the thickness T _O that is the chamfered measures W _LM.

When the wafer W having a thickness T is chamfered, the center of the wafer W in the thickness direction is set at the point C of the grindstone 30.
When the upper surface S of the wafer table 20 is located in the direction of the axis of rotation of the grindstone 30 in the z-axis direction, Z _C = − _O (W _UM −W _LM ) tan α / 2 + (T _O −T)
/ 2｝.

Thus, the wafer W having a desired surface width can be chamfered. Next, a second embodiment of the wafer chamfering apparatus according to the present invention will be described. The wafer chamfering apparatus according to the second embodiment can perform rough polishing and finish chamfering of the peripheral portion of a wafer with one apparatus. In addition, chamfering of the notch portion can be performed on the notched wafer.

FIGS. 16 and 17 are a side view and a plan view, respectively, showing the configuration of the wafer chamfering apparatus of the present embodiment. FIGS. 18 and 19 are A-A of FIG.
It is sectional drawing and BB sectional drawing. As shown in FIGS. 16 and 17, the wafer chamfering apparatus 40 mainly includes a wafer feed unit 42, a rough outer grinding unit 44, a notch processing unit 46 and a fine outer grinding unit 48.

First, the configuration of the wafer feeding unit 42 will be described. As shown in FIGS. 16 and 18, a pair of Y-axis guide rails 52 are laid on a horizontally arranged base plate 50 along the Y direction in the figure. Y is provided on the pair of Y-axis guide rails 52, 52.
Y-axis table 5 via the axis linear guides 54, 54,.
6 is slidably supported.

The nut member 5 is provided on the lower surface of the Y-axis table 56.
The nut member 58 is fixed to the pair of Y members.
It is screwed to a Y-axis ball screw 60 disposed between the axis guide rails 52, 52. Both ends of the Y-axis ball screw 60 are rotatably supported by bearing members 62, 62 disposed on the base plate 50, and one end of the Y-axis ball screw 60 is provided on one of the bearing members 62. Motor 64
Output shafts are connected. The Y-axis ball screw 60 is rotated by driving the Y-axis motor 64. As a result, the Y-axis table 56
Slide horizontally along 2. Hereinafter, the direction in which the Y-axis table 56 slides is referred to as the Y-axis direction.

As shown in FIGS. 17 and 19, a pair of X-axis guide rails 66, 6 are provided on the Y-axis table 56.
6 are laid along the X direction in the figure. This pair of X
The X-axis linear guide 6 is provided on the axis guide rails 66, 66.
An X-axis table 70 is slidably supported via 8, 68,. A nut member 72 is fixed to the lower surface of the X-axis table 70, and the nut member 72 is screwed to an X-axis ball screw 74 disposed between the pair of X-axis guide rails 66,66. X axis ball screw 74
Are rotatably supported at both ends by bearing members 76, 76 disposed on the X-axis table 70, and have an X-axis motor 78 provided on one bearing member 76 at one end. Output shafts are connected. X axis ball screw 74
Rotates by driving the X-axis motor 78,
As a result, the X-axis table 70 is
Slide horizontally along 6 and 66. Hereinafter, the direction in which the X-axis table 70 slides is referred to as the X-axis direction.

As shown in FIG. 17 and FIG. 18, a Z-axis base 80 is vertically provided on the X-axis table 70. The Z-axis base 80 has a pair of Z-axis guide rails 82, Reference numeral 82 is laid along the Z direction in the figure. A Z-axis table 86 is slidably supported on the pair of Z-axis guide rails 82 via Z-axis linear guides 84, 84.

The nut member 8 is provided on the side of the Z-axis table 86.
The nut member 88 is fixed to the pair of Zs.
It is screwed into a Z-axis ball screw 90 provided between the axis guide rails 82,82. The Z-axis ball screw 90 has a bearing member 9 whose both ends are disposed on the Z-axis base 80.
2, 92, the lower end of which is connected to the output shaft of a Z-axis motor 94 provided on the lower bearing member 92. The Z-axis ball screw 90 is rotated by driving the Z-axis motor 94. As a result, the Z-axis table 86 slides vertically along the Z-axis guide rails 82.

On the Z-axis table 86, a θ-axis motor 9
6 are installed vertically. The output shaft of the θ-axis motor 96 is connected to a θ-axis shaft 98, and a wafer table 100 is horizontally fixed to the upper end of the θ-axis shaft 98. The wafer W to be chamfered is positioned and mounted on the wafer table 100, and is held by vacuum suction. Then, the held wafer W is rotated around the θ axis by driving the θ axis motor 96.

In the wafer feeding unit 42 configured as described above, the wafer table 100 is slid horizontally in the Y direction by driving the Y-axis motor 64, and is driven by driving the X-axis motor 78. X
Slide horizontally along the direction. Then, by driving the Z-axis motor 94, it slides vertically along the Z direction, and by driving the θ-axis motor 96,
Rotate around an axis.

Next, the configuration of the outer peripheral roughening unit 44 will be described. As shown in FIGS. 16, 17 and 20,
A gantry 102 is installed vertically on the base plate 50. An outer periphery roughening motor 104 is mounted on the base 102.
The outer peripheral motor 104 has an output shaft connected to an outer peripheral rough grinding spindle 106.
Rough grinding wheel 10 for chamfering the outer circumference of wafer W
8 is mounted on the rough grinding spindle 106 for outer periphery.

Here, in the outer peripheral rough grinding stone 108, a groove 108a having the same shape as the chamfered shape required for the wafer W is formed on the outer periphery (total grinding wheel).
By pressing the peripheral edge of the wafer W against 08a, the peripheral edge of the wafer W is chamfered. In this embodiment, it is assumed that a wafer W having a chamfered shape (triangular cross section) of the type shown in FIG. 3 (a) is processed. It is assumed that a groove 108a having a triangular cross section conforming to the chamfered shape of the wafer W is formed.

In the outer peripheral rough grinding unit 44 configured as described above, the outer peripheral rough grinding wheel 108 is rotated by driving the outer peripheral rough grinding motor 104. Next, the configuration of the notch processing unit 46 will be described. FIG.
As shown in FIGS. 17 and 20, a column 1 is provided on the side of the gantry 102 along the rotation axis of the outer peripheral grinding wheel 108.
10 are arranged vertically. The lower end of the support 110 is fixed to the side surface of the gantry 102, and a beam 111 is formed horizontally at the upper end. A bearing member 112 is provided at the tip of the beam portion 111, and an arm 116 is swingably supported by the bearing member 112 via a pin 114.

The arm 116 has a notch rough grinding motor 11
8R and a notch sharpening motor 118F are arranged at a predetermined interval. A notch roughening spindle 120R is connected to the output shaft of the notch roughening motor 118R. Rough grinding wheel for notch 122 for rough-chamfering notch
R is mounted on the roughing spindle for notch 120R. On the other hand, the output shaft of the notch refinement motor 118F is connected to the notch refinement spindle 120F. Fine grinding wheel for notch 122F for finishing and chamfering notch
Is mounted on the notch fine polishing spindle 120F.

Although not shown in detail, the notch rough grinding wheel 122R and the notch fine grinding wheel 122F
A groove having the same shape as the chamfered shape required for the wafer W is formed in the outer periphery of the wafer W in the same manner as the rough grinding wheel for outer periphery 108. The arm 116 can be fixed by a lock means (not shown).
Is held horizontally as shown in FIG.

In the notch processing unit 46 configured as described above, the notch rough grinding wheel 122R is rotated by driving the notch rough grinding motor 118R.
Further, the notch fine grinding wheel 122F is rotated by driving the notch fine grinding motor 118F. Next, the configuration of the outer peripheral fine polishing unit 48 will be described.

As shown in FIG. 16, a column 130 is vertically provided on the base plate 50. A horizontal beam portion 130A is formed at the top of the support 130, and the beam portion 130A is arranged along the Y direction in the figure, as shown in FIG. Also, this beam portion 130A
Is, as shown in FIG.
Are arranged so as to be orthogonal to the rotation axis (θ-axis) of.

At the tip of the beam portion 130A, there is provided an outer periphery sharpening motor 132. An outer periphery fine grinding spindle 134 is connected to the output shaft of the outer peripheral fine grinding motor 132. The outer peripheral sharpening grindstone 136 for finishing and chamfering the outer periphery of the wafer includes the outer peripheral fine grinding spindle 1.
34. Here, the outer peripheral grinding wheel 136 is used.
Is formed in a cylindrical shape, and its rotation axis γ is disposed along the Y direction in the figure by being mounted on the outer peripheral fine polishing spindle 134. Also, by being mounted on the outer periphery fine polishing spindle 134, its rotation axis γ
Are orthogonal to the rotation axis (θ-axis) of the wafer table 100.

In the outer peripheral fine grinding unit 48 configured as described above, the outer peripheral fine grinding wheel 136 is rotated by driving the outer peripheral fine grinding motor 132. The wafer chamfering device 40 of the present embodiment is configured as described above. In the following description, as shown in FIG. 17, the Y-axis guide rail 52
A straight line parallel to the X-axis guide rail 66 is defined as an “X-axis” while a straight line parallel to the X-axis guide rail 66 passes through the center in the axial direction of the outer peripheral sharpening grindstone 136. Then, through the intersection of the Y axis and the X axis, θ
A straight line parallel to the axis is referred to as “Z axis”.

Next, the operation of the wafer chamfering apparatus 40 according to the present embodiment configured as described above will be described.
In the initial state, the wafer table 100 is located at the origin position. That is, the wafer table 100
Is located at the intersection of the Y axis and the X axis. The upper surface S is located at the same height as the rotation axis γ of the outer peripheral sharpening stone 136.

First, the wafer W is positioned and mounted on the wafer table 100 by a transfer device (not shown). At this time, the wafer W is placed so that its center O _W coincides with the rotation axis θ of the wafer table 100. Also, the notch NO is placed so as to be located in the Y-axis direction. Then, the wafer W is placed on the wafer table 1
When the wafer W is placed on the wafer table 00, the wafer W is suction-held on the wafer table 100.

Thus, the preparation for machining is completed, and thereafter, chamfering is started. In the chamfering, first, the outer periphery of the wafer W (the circular portion C of the wafer W) is rough-chamfered, and then the finished chamfering of the outer periphery and the rough chamfering of the notch portion are performed. Finally, finish chamfering of the notch portion is performed. FIGS. 21A to 21D show a processing procedure in the case where the circular portion C of the wafer W is rough-chamfered.

First, the Z-axis motor 94 is driven, and the wafer table 100 moves a predetermined distance in the Z-axis direction. Thus, the center of the wafer W in the thickness direction is positioned at the same height as the center of the groove 108a of the outer peripheral rough grinding stone 108. Next, the outer peripheral rough grinding motor 104 and the θ-axis motor 96 are driven, and the outer peripheral rough grinding wheel 108 and the wafer table 100 are both rotated at a high speed in the same direction.

Next, the Y-axis motor 64 is driven, and the wafer W is sent on the Y-axis to the rough grinding wheel 108 for outer periphery. Here, the feed speed of the wafer W is
Is decelerated just before contacting the outer peripheral grinding wheel 108, and then is sent at a slow speed. The wafer W sent toward the outer peripheral grinding wheel 108 is shown in FIG.
As shown in (b), the peripheral edge contacts the groove 108a of the outer peripheral rough grinding wheel 108. Even after this contact, the wafer W is sent at a predetermined feed speed toward the outer peripheral grinding wheel 108, and as a result, the circular portion C of the wafer W is
Are ground and chamfered.

As shown in FIG. 21 (c), the wafer W is fed by the rough grinding wheel 108 for outer periphery and the wafer table 100.
Until the distance between the axes reaches a predetermined distance L. When the distance between the axes reaches the predetermined distance L, the driving of the Y-axis motor 64 is stopped. The wafer table 100
Thereafter, as shown in FIG. 21 (d), while moving on the Y-axis by a predetermined distance in a direction away from the outer peripheral roughening grindstone 108,
It moves a predetermined distance in the Z-axis direction and returns to the origin position. When the wafer table 100 returns to the origin position, the drive of the θ-axis motor 96 and the outer peripheral roughening motor 104 is stopped,
The rotation of the wafer W and the outer peripheral roughening grindstone 108 is stopped.

With the above, the rough chamfering of the circular portion C of the wafer W is completed. The outer periphery of the wafer W after the rough chamfering process is formed into a triangular cross section that matches the groove shape of the outer peripheral rough grinding wheel 108. Next, finish chamfering of the outer periphery of the wafer W subjected to rough chamfering as described above is performed.

When the outer periphery of the wafer W is finish-chamfered as described above, the periphery of the wafer W is brought into contact with the rotating fine grinding wheel 136 for outer periphery, and the wafer W is moved along the shape of the periphery. Performed by Here, FIG.
As shown in (1), the inclination angle of the chamfered surface of the wafer W after the finish chamfering is represented by α. The point at the upper end of the upper chamfered surface after finishing chamfering is P ₁ , and the point at the lower end is P _1
2, and points to P ₃ of the upper end portion of the lower side chamfer surface, the point of the lower end portion to P _4.

In the fine grinding wheel for outer periphery 136, a straight line is drawn from the center of rotation G _O of the grinding wheel in parallel with the rotation axis θ of the wafer W, and points A and E at which the straight line intersects with the outer periphery of the grinding wheel 30 are shown. . Further, a straight line is drawn perpendicular from the rotation center G _O of the grinding wheel with the rotational axis θ of the wafer W, the linear grinding wheel 3
A point that intersects the outer periphery of 0 is defined as C. Then, straight line G _O A
From the point rotated alpha ° to the rotation axis θ side of the wafer W and B, and points obtained by rotating alpha ° from a straight line G _O E to the rotary shaft θ side of the wafer W and D.

The wafer table 100 that has returned to the original position after the rough chamfering process first descends by a predetermined distance in the Z-axis direction. As a result, the point P ₁ on the wafer W is located at the same height as the point B on the outer peripheral sharpening grindstone 136. Next, the grinding wheel motor 34 is driven, and the fine grinding wheel 13 for the outer periphery is driven.
6 rotates, and a motor (not shown) is driven to rotate the wafer W.

Next, the wafer table 100 moves in the X-axis direction toward the fine grinding wheel 136 for outer periphery. When the wafer table 100 moves a predetermined distance, the outer peripheral surface of the outer peripheral sharpening grindstone 136 contacts the peripheral edge of the wafer W. After the contact, the wafer table 100 continues to move, and as a result,
The peripheral portion of the wafer W is ground to the outer peripheral sharpening grindstone 136.

The wafer table 10 moved in the X-axis direction
0 indicates a point P ₁ on the wafer W as shown in FIG.
However, when it reaches a point B on the outer peripheral sharpening grindstone 136, the movement is temporarily stopped. The wafer table 100 then moves obliquely upward with the same inclination angle α as the inclination angle α of the chamfered surface formed on the peripheral portion of the wafer W. Then, as shown in FIG.
_{When 2} reaches the point B on the outer peripheral sharpening stone 136, the movement is temporarily stopped. As a result, the upper chamfered surface formed on the peripheral edge of the wafer W is finish chamfered by the outer peripheral sharpening grindstone 136 as shown in FIG.

Next, the wafer table 100 is
Move along the circumference of the fine grinding wheel 136 in an arc
You. Then, as shown in FIG.
Point P _ThreeReaches a point D on the fine grinding wheel 136 for outer circumference.
Then, the movement is temporarily stopped. As a result, as shown in FIG.
In addition, the tip radius formed on the peripheral portion of the wafer W
Is chamfered by the fine grinding wheel for outer circumference 136.
It is.

Next, the wafer table 100 moves obliquely upward with the same inclination angle α as the inclination angle α of the chamfered surface formed on the peripheral portion of the wafer W. Then, as shown in FIG. 11 (d), the point P ₄ on the wafer W reaches the point D on the outer periphery for fine Labs grindstone 136, it stops moving. As a result, as shown in the figure, the lower chamfered surface formed on the peripheral edge of the wafer W is
Finish chamfering.

The outer periphery of the wafer W is finish-chamfered by the above steps. Thereafter, the wafer table 100 moves in a direction away from the outer peripheral sharpening grindstone 136 along the X-axis direction, and returns to the origin position by moving a predetermined distance in the Z-axis direction. Next, rough chamfering of a notch portion (notch NO and notch corner NR) formed on the outer periphery of the wafer W is performed.

As described above, the wafer table 100 on which the finish chamfering of the outer periphery of the wafer W has been completed returns to the origin position. In this state, the wafer W is as shown in FIG.
As shown in (d), the notch NO is located on the Y axis. First, the X-axis motor 78 is driven, and the wafer table 100 moves a predetermined distance in the X-axis direction. As a result,
As shown in FIG. 22 (a), one notch corner NR
Are located on a straight line that passes through the notch rough grinding wheel 122R and is parallel to the Y axis. Next, the Z-axis motor 94 is driven, and the wafer table 100 moves a predetermined distance along the Z-axis direction. As a result, the center in the thickness direction of the wafer W is located at the same height as the center of the groove of the rough grinding wheel for notch 122R.

Next, the rough notch motor 118R is driven, and the notch rough grinding wheel 122R rotates at a high speed. At the same time, the Y-axis motor 64 is driven, and the wafer W moves toward the notch rough grinding wheel 122R. Wafer W
Is moved a predetermined distance, the driving of the Y-axis motor 64 is stopped. As a result, as shown in FIG. 22B, the notch corner NR on one side comes into contact with the groove of the rough notch grinding wheel 122R. The X-axis motor 78 and Y
The axis motor 64 is driven at the same time to feed the wafer W in the X-axis direction and the Y-axis direction. This feed is provided along the shape of the notch corner NR so that the notch corner NR always contacts the groove of the rough notch grinding wheel 122R. As a result, the notch corner NR is rough-chamfered.

When the rough chamfering of the notch corner NR is completed, the rough chamfering of the notch NO is performed. That is, as shown in FIG. 22 (c), the notch NO is always brought into contact with the groove of the rough grinding wheel 122R for notch.
Feed is given to the wafer W along the shape of the notch NO. For example, in the case of a notch formed in a V shape, the wafer W is fed so as to draw a V shape. As a result,
The V-shaped notch NO is rough chamfered.

When the rough chamfering of the notch NO is completed,
Next, as shown in FIG. 22D, the notch corner NR on the other side is rough chamfered. In other words, the wafer W is fed along the shape of the notch corner NR so that the notch corner NR always contacts the groove of the rough grinding wheel for notch 122R. As a result, the notch corner NR on the other side is rough-chamfered.

When the rough chamfering of the other notch corner NR is completed, the feeding of the wafer W is temporarily stopped.
Then, from this state, the wafer W is fed by the reverse operation to the above, and the notch corner NR,
The notch NO and the notch corner NR on the other side are rough chamfered in order. By repeating the above operation a plurality of times, the notch NO and the notch corner NR are rough-chamfered.

When the rough chamfering of the notch NO and the notch corner NR is completed, the wafer W first stops at a position where it comes into contact with the notch rough grinding wheel 122R. After the stop, the wafer table 100 moves a predetermined distance in the direction away from the notch grinding wheel 122R along the Y-axis direction. At the same time, the notch motor 118
The drive of R is stopped, and the rotation of the notch rough grinding wheel 122R is stopped.

As described above, the rough chamfering of the notch portion of the wafer W is completed. Next, finish chamfering of the notch portion of the wafer W is performed. First, the X-axis motor 78 is driven, and the wafer W moves a predetermined distance in the X-axis direction.
As a result, the notch corner NR on one side of the notch formed on the wafer W is located on a straight line passing through the center of the fine grinding wheel 122F and parallel to the Y axis. Next, the Z-axis motor 9
4 is driven, and the wafer W moves a predetermined distance along the Z-axis direction. As a result, the center of the wafer W in the thickness direction is located at the same height as the center of the groove formed on the notch sharpening grindstone 122F.

Then, the notch motor 118F for fine polishing is driven, and the fine grinding wheel 122F for notch rotates at high speed. At the same time, the Y-axis motor 64 is driven, and the wafer W moves toward the notch grinding wheel 122F. Wafer W
Is moved a predetermined distance, the driving of the Y-axis motor 64 is stopped. As a result, the notch corner N on one side of the wafer W
R comes into contact with a groove formed in the notch grinding wheel 122F. Hereinafter, the notch NO and the notch corner NR are finish-chamfered in the same procedure as when the above-mentioned notch is rough-chamfered.

When the finish chamfering of the notch NO and the notch corner NR is completed, the wafer table 100 first stops at the position where it comes into contact with the notch grinding wheel 122F. Then, after the stop, it moves a predetermined distance in a direction away from the notch grinding wheel 122F along the Y-axis direction, moves a predetermined distance in the X-axis direction and the Z-axis direction, and returns to the origin position. At the same time, the driving of the notch motor 118F is stopped, and the notch polishing wheel 122F is driven.
The rotation of F stops.

Through the above series of steps, the rough chamfering and the finishing chamfering of the outer periphery and the notch of the wafer W are completed. When returning to the home position, the wafer table 100 releases the suction of the wafer W. Then, the transfer device (not shown) picks up the processed wafer W from the wafer table 100 and transfers it to the next step.

As described above, according to the wafer chamfering apparatus 40 of the present embodiment, the outer periphery and the notch portion can be chamfered at a time with respect to the notched wafer. At this time, since each processing can be performed while the wafer W is placed on the same wafer table 100, the wafer W can be chamfered with high accuracy. That is, by performing each processing while the wafer W is mounted on the same wafer table 100, it is possible to prevent the misalignment due to the replacement of the wafer W, and to perform the chamfering processing on the wafer W with high accuracy. In addition, by eliminating the need to replace the wafer W, the throughput can be improved. Further, the entire configuration of the device can be made compact.

Further, as in the wafer chamfering apparatus of the present embodiment, each grindstone is fixed at a fixed position, and the wafer table 100 is moved to perform the chamfering processing of the wafer W, whereby the apparatus is chamfered. The size can be reduced, and the wafer W can be processed with high accuracy. That is, in a configuration in which the wafer table 100 is fixed at a fixed position and each grindstone moves,
A moving mechanism is required for each grindstone, which increases the size of the apparatus and increases the cost. Further, if a heavy spindle that rotates at high speed has a moving mechanism, not only the positioning accuracy is poor, but also the rigidity is reduced, which causes vibration. Therefore, as in the wafer chamfering apparatus of the present embodiment, each grindstone is fixed at a fixed position, and the wafer table 100 is moved to perform the chamfering processing of the wafer W, thereby reducing the size of the apparatus. It is possible to process the wafer W accurately.

In the wafer chamfering apparatus 40 of the present embodiment, when processing each part, first, rough chamfering is performed and then finish chamfering is performed, so that the wafer W can be precisely chamfered. it can. Note that, in the wafer chamfering apparatus 40 of the present embodiment, the outer periphery is rough-chamfered by using the outer diameter rough grinding wheel 108 having a large diameter, and the outer periphery is finish-chamfered by using the outer diameter fine grinding wheel 136 having a small diameter. I am trying to do it.
This is based on the following reasons. That is, in the rough chamfering, there is no problem even if a slight vibration is generated in the grindstone.
8 is used. On the other hand, in the finish chamfering, since the vibration of the grindstone must be suppressed as much as possible, the outer peripheral fine grinding wheel 136 having a small diameter that does not easily generate the vibration is used. Further, when the outer periphery of the wafer W is finish-chamfered by using the wafer chamfering method according to the present invention, by using a grindstone having a small diameter, the wafer table 100 can be formed.
Since the movement stroke of the wheel can be reduced, the size of the apparatus can be reduced by using a grindstone having a small diameter. For the above reasons, in the wafer chamfering apparatus 40 of the present embodiment, the outer peripheral rough grinding stone 1 having a large diameter is used.
08, the outer periphery is rough-chamfered, and the outer periphery is finish-chamfered using a small diameter fine grinding wheel 136 for the outer periphery. In addition, the fine grinding wheel 136 for the outer periphery includes:
It is preferable to use a resin-bonded grindstone in order to improve the precision of the ground surface.

In the present embodiment, the chamfered shape of the wafer W is triangular in cross section. However, by exchanging the rough grinding wheel for outer periphery 108, the rough grinding wheel for notch 122R, and the fine grinding wheel for notch 122F, 3 (b) and 3 (c), a chamfered shape having a trapezoidal cross section or a semicircular cross section can be formed. At this time, as the outer peripheral rough grinding stone 108, one having a trapezoidal groove 108 a as shown in FIG. 24 or one having no groove as shown in FIG. 25 is used. Rough grinding wheel for notch 122R and fine grinding wheel for notch 1
The same applies to 22F.

In the case where a wafer W having a trapezoidal cross section is rough-chamfered, the groove 1 shown in FIG.
Processing may be performed by using a rough grinding wheel for outer periphery 108 having the 08a. In this case, the wafer W is shown in FIG.
First, the lower edge is pressed against the lower inclined surface of the groove 108a to chamfer the lower edge, and then the upper edge is pressed against the upper inclined surface of the groove 108a as shown in FIG. Chamfering.

Further, in the present embodiment, when performing rough chamfering on the outer periphery of the wafer W, the outer periphery of the wafer W rotating at a high speed is pressed against the rough grinding wheel 108 for outer periphery rotating at a high speed.
A desired chamfering process is performed by bringing the wafer W closer to the grindstone by a small amount, but the method of rough chamfering the outer periphery of the wafer W is not limited to this method. For example, the peripheral edge of the wafer W may be brought into contact with the outer peripheral surface roughening grindstone 108 rotating at a high speed, and after the wafer W is cut by a predetermined amount, the wafer W may be slowly rotated to perform a desired chamfering process. .

When the outer periphery of the wafer W is chamfered by the wafer chamfering device 40 of the present embodiment, the wafer W is processed while reciprocating the wafer W along the axial direction of the outer peripheral sharpening grindstone 136. You may do so.
This makes it possible to process the wafer W with high surface accuracy while effectively suppressing wear of the outer peripheral sharpening grindstone 136.

The notch processing unit 46 is provided in the wafer chamfering apparatus 40 of the present embodiment so that a series of chamfering can be performed on a notched wafer. When only a wafer with a notch is to be processed, the notch processing unit 46 need not be particularly provided. This makes it possible to reduce the size of the device.

Next, a description will be given of a third embodiment of the wafer chamfering apparatus according to the present invention. The wafer chamfering apparatus 200 according to the third embodiment includes:
Processing, washing and collection can be performed automatically. FIG.
7 is a plan view showing the entire configuration of the wafer chamfering apparatus 200 according to the third embodiment, and FIG. 28 is a perspective view thereof.

As shown in FIGS. 27 and 28, the wafer chamfering apparatus 200 according to the third embodiment has a
12, measuring and conveying unit 214, measuring unit 216, processing unit 21
8, a cleaning unit 220 and a processing / conveying unit 222. First, the configuration of the supply and recovery unit 212 will be described. In the supply and recovery section 212, the wafer W to be chamfered
Is supplied from the wafer cassette 230, and the chamfered wafer W is collected in the wafer cassette 230. As shown in FIG. 27, the supply / recovery section 212 includes four cassette tables 232, 232,.
It is composed of two supply and recovery robots 234.

The four cassette tables 232, 232,
Are arranged in series, and the wafer cassettes 230, 23 are placed on the cassette tables 232, 232,.
0,... Are set. The supply / recovery robot 234 takes out the wafers W one by one from each of the wafer cassettes 230 set on the cassette tables 232, 232,. From the wafer cassette 230.

The transfer arm 236 of the supply / recovery robot 234 has a suction pad (not shown) on the upper surface, and holds the wafer W by vacuum-sucking the lower surface of the wafer W with the suction pad. In addition, this supply and recovery robot 2
The transfer arm 236 moves back and forth on the turntable 238, and turns as the turntable 238 rotates, and moves up and down as the turntable 238 moves up and down. Further, the transfer arm 236 of the supply / recovery robot 234 is
8 slides in the Y direction in the figure, thereby sliding along the four cassette tables 232, 232,. That is, the transfer arm 236 of the supply / recovery robot 234 moves back and forth while holding the wafer W,
The wafer W can be moved right and left, up and down, and swivel.

Next, the configuration of the measurement and transport section 214 will be described. The measuring and transporting unit 214 is provided between the supply and recovery unit 212 and the measuring unit 216, and between the processing and transporting unit 222 and the measuring unit 21.
6 is transferred. The measurement and transport section 214 is provided with a measurement and transport robot 240. The measurement and transfer robot 240 is provided with a pair of upper and lower transfer arms 242A and 242B, and each of the transfer arms 242A and 242B has a suction pad (not shown) on the upper surface thereof. Each transfer arm 242A, 2
The suction pad 42B holds the wafer W by vacuum-sucking the lower surface of the wafer W with the suction pad. The transfer arms 242A and 242B of the measurement transfer robot 240 move back and forth on the turntable 244, turn as the turntable 244 rotates, and move up and down as the turntable 244 moves up and down. That is, the transfer arm 242 of the measurement transfer robot 240
A and 242B can move back and forth, move up and down, and turn while holding the wafer W, and transfer the wafer W by combining these operations. In the following description, the upper transfer arm 242A is used as necessary.
Is referred to as a “first transfer arm 242A”, and the lower transfer arm 242B is referred to as a “second transfer arm 242B”.

Next, the configuration of the measuring section 216 will be described. The measurement unit 216 performs pre-measurement of the chamfered wafer W and post-measurement of the chamfered wafer W.
The measurement unit 216 includes the front measurement device 246 and the rear measurement device 2.
48. Note that the post-measurement device 248
Is installed above the front measurement device 246, and therefore only the rear measurement device 248 is shown in FIG.

As shown in FIG. 28, the pre-measurement device 246 includes a measurement table 250, a pre-centering sensor 25,
2, thickness sensor 254, pre-alignment sensor 256
And a fine alignment sensor 258. The measurement table 250 is configured to be rotatable and vertically movable, and rotates while holding the back surface of the wafer W by suction. The pre-centering sensor 252 measures the approximate center position of the wafer W transferred to the measurement table 250 by the measurement transfer robot 240. Thickness sensor 254
Measures the thickness of the wafer W. The pre-alignment sensor 256 detects the approximate position of a notch or orientation flat formed on the outer periphery of the wafer W. The fine alignment sensor 258 determines the diameter of the notched wafer W,
The center position, the notch position and the notch depth are measured. Also, the A diameter, B diameter, center position, and orientation flat position of the wafer W with orientation flat are measured.

The pre-measurement device 246 configured as described above
Then, the pre-measurement of the wafer W is performed as follows. When receiving the wafer W from the supply / recovery unit 212, the measurement / transport robot 240 of the measurement / transport unit 214 transports the wafer W to the thickness sensor 254. During this transfer process, the wafer W passes through the pre-centering sensor 252, whereby the approximate center position of the wafer W is measured. Then, the movement of the transfer arms 242A and 242B is controlled based on the measured approximate center position information, and the center of the wafer W is located at the measurement position of the thickness sensor 254. The thickness sensor 254 measures the thickness at the center of the wafer W.

When the measurement of the center thickness is completed, the transfer arms 242A and 242B are retracted by a predetermined amount. As a result, the center of the wafer W substantially matches the center of the measurement table 250. The transfer arms 242A and 242B are connected to the measurement table 2
After the wafer W is delivered to 50, the wafer W is retracted by a predetermined amount and retracted from the measurement table 250. The measurement table 250 that has received the wafer W rotates the wafer W at a predetermined rotation speed. When the rotation is stabilized, the pre-alignment sensor 256 measures the approximate position of the notch of the wafer W (or the approximate position of the orientation flat in the case of the wafer W with the orientation flat).

At the same time, the fine alignment sensor 258 measures the diameter of the wafer W to accurately determine the center position of the wafer W (in the case of the wafer W with orientation flat, the diameter A is measured and the wafer W is measured). Find the exact center position of.). Further, since the outer periphery of the wafer W held by the measurement table 250 is located at the measurement position of the thickness sensor 254, the thickness sensor 254 measures the thickness of the outer periphery of the wafer W.

When the above measurements are completed, the rotation of the measurement table 250 stops. Then, based on the measurement result of the pre-alignment sensor 256, the measurement table 250
Is rotated by a predetermined amount, and the notch moves to a predetermined notch measurement position (in the case of a wafer W with an orientation flat, the orientation flat moves to a predetermined orientation flat measurement position). When the notch is located at the notch measurement position, the measurement table 250 slowly rotates the wafer W. Then, the fine alignment sensor 258 is applied to the rotating wafer W.
Accurately measures the notch position and the notch depth (in the case of the wafer W with the orientation flat, the orientation flat position and the B diameter are accurately measured).

Through a series of steps described above, the pre-measurement of the wafer W by the pre-measurement device 246 is completed. As shown in FIGS. 28 and 29, the rear measurement device 248 includes a measurement table 260, a first camera 262A, and a second camera 26.
2B, first transmission lighting device 264A, second transmission lighting device 2
64B, a first reflected lighting device 266A, a second reflected lighting device 266B, and an image data processing device 268.

The measurement table 260 holds the back surface of the wafer W by vacuum suction, and rotates and moves up and down. The first camera 262A captures an image of the peripheral edge of the front surface of the wafer W held on the measurement table 260, and the second camera 262B captures an image of the peripheral edge of the back surface of the wafer W held on the measurement table 260. The first camera 262A and the second camera 26
2B is installed on a straight line passing through the rotation center of the measurement table 260, and is installed at a position equidistant from the rotation center of the measurement table 260.

The first transmission illuminating device 264A is installed so as to face the first camera 262A.
Is irradiated with transmitted light toward the first camera 262A from the back side of the camera. On the other hand, the second transmitted illumination device 264B is installed so as to face the second camera 262B, and the wafer W
The transmitted light is emitted from the front side of the camera to the second camera 262B.

The first reflection illuminating device 266A irradiates reflected light toward the chamfered surface on the back surface side of the wafer W captured by the first camera 262A. On the other hand, the second reflection lighting device 26
6B irradiates the reflected light toward the chamfered surface on the front side of the wafer W captured by the second camera 262B. The image data processing device 268 measures the outer shape of the wafer based on image data obtained by imaging with the first camera 262A and the second camera 262B, and detects the presence or absence of scratches or chips on the chamfered surface. .

The post-measurement device 248 configured as described above
Is the wafer W transferred to the measurement table 260
Is captured by the first camera 262A and the second camera 262B,
The image data processing device 268 measures the shape of the wafer W based on the image data. That is, for the notched wafer W, as shown in FIG.
Diameter, outer peripheral surface width (front and back), notch angle, notch corner R, notch bottom R, notch depth, and the presence or absence of scratches or chips on the chamfered surface (front and back)
Is measured. For the wafer W with orientation flat, as shown in FIG. 33, the A diameter of the wafer W (the diameter of the circular portion of the wafer W), the B diameter (the diameter of the orientation flat portion of the wafer W), the AB diameter, Outer peripheral width (table,
The back), the orientation flat corner R, and the presence or absence of scratches or chips on the chamfered surface (front and back) are measured.

Next, the configuration of the processing section 218 will be described. The processing section 218 is provided with the wafer chamfering device 40 according to the second embodiment described above. Therefore, the description of the configuration is omitted here. Next, the configuration of the cleaning unit 220 will be described. In the cleaning unit 220,
The chamfered wafer W is cleaned. As shown in FIGS. 27 and 28, the cleaning unit 220 includes a spin cleaning device 290 and a wafer lifting / lowering device 292.

The spin cleaning device 290 performs spin cleaning of the wafer W. That is, while rotating the wafer W, a cleaning liquid is applied to the surface of the wafer W for cleaning. Wafer W
Is rotated while being sucked and held by the cleaning table 294, and a cleaning liquid is ejected from the nozzle (not shown) toward the rotating wafer W. The wafer elevating device 292 transports the wafer W cleaned by the spin cleaning device 290 to a position at a predetermined height by an elevating arm 296 that can move up and down. The lifting arm 29 of the wafer lifting device 292
6 is provided with a suction pad 298 at the lower end of the tip, and the suction pad 298 holds the wafer W by vacuum-sucking the upper surface of the wafer W.

Next, the configuration of the processing / transporting section 222 will be described. The processing / conveying unit 222 includes the measuring unit 216 and the processing unit 2
18, the wafer W is transferred between the processing unit 218 and the cleaning unit 220, and between the cleaning unit 220 and the measurement transfer unit 214. This transport unit 222 is provided in FIG. 27 and FIG.
As shown in FIG. 0, it is composed of a transfer 300 for supply and a transfer 302 for recovery.

The transfer 300 for supply is connected to the measuring section 2
The wafer W pre-measured by the 16 pre-measuring devices 246 is transferred to the grinding table 276 of the processing section 218. The supply transfer 300 includes a supply horizontal slide block 306 that moves along a horizontal guide 304, and a supply transfer arm 308 that is provided on the supply horizontal slide block 306 so as to rotate and move up and down. ing.

The supply transfer arm 308 is provided with a suction pad 310 at the lower end of the tip.
Hold. The transfer for collection 302 includes the processing unit 2
The wafer W chamfered at 18 is transferred onto the cleaning table 294 of the cleaning unit 220, and the cleaning unit 220
Is transported to the measurement transport robot 240 of the measurement transport section 214. The collection transfer 302 includes a collection horizontal slide block 312 that moves along the horizontal guide 304, and a collection transfer arm 316 provided on the collection horizontal slide block 312 so as to be vertically movable. .

The collection transfer arm 316 has a first suction pad 318 at the lower end of the tip and a pair of second suction pads 320, 320 at the upper end of the tip. The wafer W, which has been chamfered by the processing unit 218, is suction-held at its upper surface by the first suction pad 318, and is transferred onto the cleaning table 294 of the cleaning unit 220. Also,
The lower surface of the wafer W cleaned by the cleaning unit 220 is suction-held by the second suction pad 320 and the measurement transfer unit 21
4 is transferred to the measurement transfer robot 240.

The transfer arm 316 for collection
The transfer arm 308 and the supply transfer arm 308 are arranged at predetermined intervals in the vertical direction so as not to conflict with each other. Therefore, the transfer arm for recovery 316
The first suction pad 318 and the second suction pad 320 can be located directly below the suction pad 310 of the supply transfer arm 308.

The processing / conveying section 222 configured as described above
Then, the transfer arm 308 for supply and the transfer arm 316 for collection are connected as shown in FIG.
Move between the “wafer receiving position”, “working part delivery position”, “standby position” and “cleaning part delivery position” to move the wafer W
Is carried. Wafer chamfering device 20 of the present embodiment
0 is configured as described above. The entire operation of the wafer chamfering apparatus 200 is controlled by a control device (not shown), and the entire process from supply to collection of the wafer is automatically performed.

Next, the operation of the wafer chamfering apparatus 200 according to the present embodiment configured as described above will be described. As shown in FIG. 27, first, the supply and recovery robot 23
4 takes out one wafer W from one of the four wafer cassettes 230, 230,.... The supply and recovery robot 234 transfers the removed wafer W to the second transfer arm 242B of the measurement and transfer robot 240. The delivery of the wafer W is performed as follows.

In the initial state, the measuring and transporting robot 24
The 0 transfer arms 242A and 242B are located at predetermined standby positions (positions shown in FIG. 27) and are on standby. When the transfer arm 236 of the supply and recovery robot 234 takes out the wafer W from the wafer cassette 230, it moves to a predetermined wafer delivery position (the position shown in FIG. 27). When the transfer arm 236 of the supply and recovery robot 234 moves to the wafer transfer position, the transfer arms 242A and 242B of the measurement and transfer robot 240 rotate by a predetermined amount so as to face the transfer arm 236 of the supply and collection robot 234. Then, the transfer arm 236 of the supply and recovery robot 234 advances by a predetermined amount with respect to the transfer arms 242A and 242B of the turned measurement transfer robot 240, and the measurement transfer robot 2
The wafer W is transferred to the second transfer arm 242B of the forty.

The transfer arm 236 of the supply / recovery robot 234 that has transferred the wafer W is retracted by a predetermined amount. On the other hand, the transfer arms 242A, 242B of the measurement transfer robot 240
Turns a predetermined amount and returns to the original standby position. Thus, the reception of the wafer W is completed. In this state, the transfer arms 242A, 242A,
42B is located so as to face the thickness measurement sensor 254 of the pre-measuring device 246.

The measurement and transfer robot 240 having received the wafer W advances the transfer arms 242A and 242B to transfer the wafer W to the pre-measurement device 246. Then, the wafer W passes through the pre-centering sensor 252 during the transfer process, so that the approximate center position of the wafer W is measured. First, the thickness of the wafer W transferred to the pre-measuring device 246 is measured by the thickness sensor 254 at the center. Then, after the measurement, it is transferred to the measurement table 250. Measurement transfer robot 24 that has delivered wafer W
The 0 transfer arms 242A and 242B move back and retreat from the measurement table 250.

On the other hand, the measurement table 250 to which the wafer W has been transferred rotates the wafer W, and the pre-alignment sensor 256 measures the approximate position of the notch with respect to the rotating wafer W, and the fine alignment sensor 258 Measures the diameter of the wafer W and accurately determines the center position of the wafer. At the same time, the thickness sensor 254 measures the thickness of the outer periphery of the wafer W.

When the above measurements are completed, the rotation of the measurement table 250 is temporarily stopped. Then, the notch is rotated by a predetermined amount based on the measurement result of the pre-alignment sensor 258, and the notch is positioned at a predetermined notch measurement position. When the notch is located at the notch measurement position, the measurement table 250 slowly rotates the wafer W. Then, the fine alignment sensor 258 is attached to the rotating wafer W.
Accurately measure the notch position. At the same time, the notch depth is measured. After the measurement is completed, the measurement table 250
Stops the rotation.

As described above, the pre-measurement of the wafer W is completed. Then, the positioning of the wafer W is performed based on the measurement result. Positioning is performed as follows. First, the notch is turned in a predetermined direction by rotating the measurement table 250 by a predetermined amount. Since the position of the notch can be known from the result of the previous measurement, the amount of rotation of the measurement table 250 is determined based on the measurement result of the previous measurement.

Next, the wafer table 100 is moved by a predetermined amount in the XY direction from a predetermined origin position. This is because the wafer W is moved from the measurement table 250 to the wafer table 10 by the supply transfer arm 308 described below.
This is to make the center of the wafer table 100 coincide with the center of the wafer W when transported to zero. Here, the origin position is set as follows. That is,
When the wafer W whose center is coincident with the center of the measurement table 250 is transferred to the wafer table 100 by the supply transfer arm 308, the position of the wafer table 100 coincides with the center of the wafer W. The origin position is set.

Since the center position of the wafer W can be known from the result of the previous measurement, the wafer table 100
Is determined based on the measurement result of the previous measurement. Thus, the positioning of the wafer W is completed. After the completion of the positioning, the wafer W is transferred from the measurement table 250 to the wafer table 100. The transport is performed as follows.

During the above positioning, the supply transfer arm 308 is located at the wafer receiving position shown in FIG. 31 and stands by. On the other hand, the collection transfer arm 316 is waiting at the standby position. When the positioning is completed, the supply transfer arm 308 rotates 90 ° in the clockwise direction. As a result, the suction pad 310 of the supply transfer arm 308 is located above the measurement table 250, as indicated by the two-dot broken line in FIG. The supply transfer arm 308 descends by a predetermined amount to receive the wafer W on the measurement table 250, and then rises again by a predetermined amount. And 9 in the counterclockwise direction
It turns by 0 ° and returns to the wafer receiving position. Supply transfer arm 308 returned to wafer receiving position
Is moved to the processing portion delivery position shown in FIG. 31 by sliding along the horizontal guide 304.

Since the wafer table 100 positioned at the predetermined position as described above is on standby at the processing section transfer position, the supply transfer arm 308 is lowered by a predetermined amount to transfer the wafer W to the wafer table 100. The supply transfer arm 308 that has delivered the wafer W rises again by a predetermined amount, and then moves to the horizontal guide 3.
By sliding along 04, it moves again to the wafer delivery position.

On the other hand, the wafer table 100 sucks and holds the transferred wafer W by vacuum suction. Here, the wafer W held on the wafer table 100 is held by the above-described positioning operation so that the center thereof is aligned with the center of the wafer table 100 and the notch is held in a predetermined direction. . Therefore, there is no need to position again,
Processing can be started as it is. Processing part 218
Starts the chamfering of the wafer W after the wafer W is suction-held on the wafer table 100.

Here, while the processing section 218 performs the chamfering of the wafer W, the pre-measuring device 246 of the measuring section 216 performs the pre-measurement of the wafer W to be chamfered by the processing section 218 in advance. deep. At the same time, the transfer arm 316 for collection moves to the processing part delivery position and stands by. When a series of chamfering (chamfering of the outer periphery and the notch) is completed in the processing part 218, the wafer table 100 moves to the processing part delivery position. When the wafer table 100 moves to the processing part delivery position,
The transfer arm 316 for collection which has been waiting is lowered by a predetermined amount, receives the wafer W from the wafer table 100, and moves up. Transfer arm 3 for collection
Thereafter, the sliding member 16 slides along the horizontal guide 304 to move to the cleaning unit delivery position shown in FIG.

[0198] The transfer arm 316 for collection, which has moved to the cleaning section transfer position, descends a predetermined distance there and transfers the wafer W to the cleaning table 294 of the spin cleaning apparatus 290. Then, after being delivered, it rises again by a predetermined distance, and then slides along the horizontal guide 304 to move to the standby position shown in FIG. On the other hand, the spin cleaning device 290 that has received the wafer W
After the recovery transfer arm 316 is raised, cleaning of the wafer W is started.

Here, as described above, the spin cleaning device 29 is used.
0, while the cleaning of the wafer W is performed, the wafer W to be chamfered next through the same process
18. Then, the wafer W is chamfered. That is, the processing unit 218 and the cleaning unit 220
At the same time, the processing of the wafer W is performed. When the cleaning of the wafer W is completed by the spin cleaning device 290, the lifting arm 296 of the wafer lifting device 292 is lowered by a predetermined amount, and receives the wafer W from the cleaning table 294. The elevating arm 296 that has received the wafer W
While returning to the original position.

[0200] On the other hand, when the chamfering of the next wafer W is completed in the processing section 218, the transfer arm 316 for collection receives the wafer W from the wafer table 100 by the same procedure as described above, and the cleaning table 294.
Transport to Here, above the cleaning table 294, the wafer W previously cleaned by the spin cleaning device 290 is placed.
Is waiting while being held by the elevating arm 296 of the wafer elevating device 292, so that the transfer arm 316 for collection returns the wafer W transferred from the processing unit 218.
Is transferred to the spin cleaning device 280, and then is raised by a predetermined amount, and the wafer W is received from the lifting arm 296. At this time, the transfer arm 316 for collection is attached to the suction pads 320, 320 provided on the upper end of the transfer arm.
To hold and receive the back surface of the wafer W. The transfer arm for collection 316 that has received the wafer W descends by a predetermined amount and moves to the standby position.

Here, when the wafer W chamfered by the processing section 218 as described above is transferred to the spin cleaning device 290 by the transfer arm 316 for collection,
In the processing unit 218, alignment of the wafer W to be chamfered next is performed. When the alignment is completed, the supply transfer arm 308 is moved to the measuring unit 2.
The wafer W is transferred from the 16 pre-measurement devices 246 to the wafer table 100 of the processing section 218. After receiving the wafer W at the wafer table 100, the processing unit 218 starts chamfering the wafer W.

On the other hand, the wafer W
The supply transfer arm 308 transported to 0 moves to the wafer receiving position. At the same time, the transfer arm for collection 316 located at the standby position moves to the wafer receiving position. Transfer arm 30 for supply
When the transfer arm 8 and the transfer arm 316 move to the wafer receiving position, the transfer arms 242A and 242B of the measurement transfer robot 240 rotate 90 degrees clockwise. As a result, the transfer arm 2 of the measurement transfer robot 240
42A and 242B are transfer arms 316 for collection.
Is positioned so as to face the wafer W held in the first position. Transfer arms 242A and 242B of measurement transfer robot 240
Thereafter, the wafer moves forward by a predetermined amount toward the wafer W held by the transfer arm 316 for collection. And
The first transfer arm 242A receives the wafer W held by the collection transfer arm 316 and retreats again. Transfer arm 242 of measurement transfer robot 240
A and 242B then turn 90 degrees counterclockwise and return to their original positions.

On the other hand, the transfer arm 316 for collection, which has transferred the wafer W, moves to the processing section transfer position by sliding along the horizontal guide 304. Further, the wafer W to be chamfered next is on standby on the measurement table 250 of the pre-measuring device 246 (standby in a state where the wafer W has been subjected to the positioning process). The wafer W is received from 250. Then, the received wafer W is transferred to the processing unit 218. In the processing unit 218,
The transferred wafer W is chamfered.

When the supply transfer arm 308 transfers the wafer W from the pre-measurement device 246 to the processing section 218, the transfer arms 242A and 242A of the measurement transfer robot 240
42B rises by a predetermined amount. As a result, the transfer arms 242A and 242B of the measurement transfer robot 240 are located so as to face the rear measurement device 248. Measurement and transfer robot 2
Thereafter, the 40 transfer arms 242A and 242B advance by a predetermined amount toward the measurement table 260 of the rear measurement device 248. Then, the wafer W is displayed on the measurement table 260.
Hand over. The transfer arms 242A and 242B of the measurement transfer robot 240 that has transferred the wafer W retreat by a predetermined amount and temporarily retreat.

On the other hand, the post-measurement device 248 performs post-measurement of the wafer W transferred to the measurement table 260.
That is, the first camera 262A and the second camera 262B capture an image of the wafer W transferred to the measurement table 260, and the image data processing device 26
8 measures the shape of the wafer W. Then, when the measurement is completed, a control device (not shown) corrects the processing position of the wafer in the processing unit 218 based on the measurement result. That is, as described in the above-described first embodiment, from the shape of the chamfered wafer W,
Radius of the outer grinding wheel 136 and the wafer table 20
Is calculated in the Z-axis direction, and the machining position is corrected so as to obtain a target chamfered shape. When the post-measurement is completed, the wafer W is placed in the original wafer cassette 23.
Collected to 0. That is, first, the measurement transport robot 2
Forty transfer arms 242A and 242B advance by a predetermined amount,
The wafer W is received from the measurement table 260 by the first transfer arm 242A. Then, after retreating by a predetermined amount, it lowers by a predetermined amount and returns to the standby position.

Here, while the post-measurement device 248 performs post-measurement of the wafer W as described above, the supply / recovery robot 234 takes out the next wafer W to be chamfered from the wafer cassette 230, and Waiting at the delivery position. When the transfer arms 242A and 242B of the measurement transfer robot 240 return to the standby position, they turn a predetermined amount so as to face the transfer arm 236 of the supply and recovery robot 234. Then, the transfer arms 242A and 242 of the turned measurement transfer robot 240
The transfer arm 236 of the supply and recovery robot 234 for B
Moves a predetermined amount, and transfers the wafer W to the second transfer arm 242B of the measurement transfer robot 240.

The transfer arm 236 of the supply / recovery robot 234 that has transferred the wafer W to the second transfer arm 242B.
Once retreats by a predetermined amount and then rises by a predetermined amount. And
It advances again by a predetermined amount, and receives the chamfered wafer W held by the first transfer arm 242A of the measurement transfer robot 240. The transfer arm 236 of the supply / recovery robot 234 that has received the chamfered wafer W retreats by a predetermined amount and then turns by a predetermined amount. Then, the wafer W is moved to the same position of the wafer cassette 230 as when the wafer W was taken out, and the wafer W is stored at the same position as when the wafer W was taken out.

On the other hand, the transfer arms 242A and 242A of the measurement transfer robot 240 receiving the wafer W to be newly processed.
Reference numeral 42B transports the wafer W to the pre-measurement device 246 by turning a predetermined amount and then moving forward by a predetermined amount. This makes it possible to simultaneously collect the chamfered wafer W and supply the newly chamfered wafer W.

Through the series of steps described above, the processing of the first wafer W is completed. Hereinafter, by repeating the same steps sequentially, all the wafers set in the supply / recovery section 212 are processed. Thus, according to the wafer chamfering apparatus 200 of the third embodiment,
A series of steps of supplying, processing, cleaning / drying, measuring, and collecting the wafer W can be performed by one apparatus. Thereby, the wafer can be efficiently processed.

Further, since the chamfered wafer is measured later and the measurement result is fed back to correct the processing position, high-precision processing is always performed even when the grinding wheel is worn. Can be implemented.

[0211]

As described above, according to the present invention,
Wafers of any chamfered shape can be processed with high precision.

[Brief description of the drawings]

FIG. 1 is a side view showing a configuration of a wafer chamfering apparatus according to a first embodiment.

FIG. 2 is a plan view showing the configuration of a wafer chamfering apparatus according to the first embodiment.

FIG. 3 is an enlarged view of a main part showing an example of a chamfered shape of a wafer.

FIG. 4 is an explanatory view in the case of chamfering the periphery of a wafer into a triangular cross section.

FIG. 5 is an explanatory view of a wafer chamfering method according to the present invention.

FIG. 6 is an explanatory view in the case of chamfering the periphery of a wafer into a triangular cross section.

FIG. 7 is an explanatory diagram in the case of chamfering the periphery of a wafer into a trapezoidal cross section.

FIG. 8 is an explanatory diagram in the case of chamfering a peripheral edge of a wafer into a trapezoidal cross section.

FIG. 9 is an explanatory diagram in the case of chamfering the periphery of a wafer into a semicircular cross section.

FIG. 10 is an explanatory diagram in the case of chamfering the periphery of a wafer into a semicircular cross section.

FIG. 11 is an explanatory view in the case where the periphery of a wafer is subjected to finish chamfering into a triangular cross section.

FIG. 12 is an explanatory diagram of a case where the periphery of a wafer is subjected to finish chamfering into a trapezoidal cross section.

FIG. 13 is an explanatory diagram of a case where a peripheral edge of a wafer is subjected to finish chamfering into a semicircular cross section.

FIG. 14 is an explanatory view of another embodiment of the wafer chamfering method according to the present invention.

FIG. 15 is an explanatory diagram of a method of correcting a processing position.

FIG. 16 is a side view illustrating a configuration of a wafer chamfering apparatus according to a second embodiment.

FIG. 17 is a plan view showing a configuration of a wafer chamfering apparatus according to a second embodiment.

18 is a plan view taken along the line AA of FIG.

FIG. 19 is a plan view taken along the line BB of FIG. 16;

FIG. 20 is a front view showing a configuration of a main part of the wafer chamfering apparatus according to the second embodiment;

FIG. 21 is an explanatory view in the case of performing rough chamfering on the outer periphery of a wafer.

FIG. 22 is an explanatory diagram in the case of chamfering a notch of a wafer.

FIG. 23 is an enlarged view of a main part showing a configuration of a grindstone.

FIG. 24 is an enlarged view of a main part showing a configuration of a grindstone.

FIG. 25 is an enlarged view of a main part showing a configuration of a grindstone.

FIG. 26 is an explanatory view of a method for rough-chamfering the outer periphery of a wafer using another grindstone.

FIG. 27 is a plan view showing a configuration of a wafer chamfering apparatus according to a third embodiment.

FIG. 28 is a perspective view showing a configuration of a wafer chamfering apparatus according to a third embodiment.

FIG. 29 is a front view showing the configuration of the rear measurement device.

FIG. 30 is a side view showing a configuration of a processing and transporting unit.

FIG. 31 is a plan view showing a configuration of a processing and transporting unit.

FIG. 32 is an explanatory diagram of measurement items of post-measurement.

FIG. 33 is an explanatory diagram of measurement items of post-measurement.

[Explanation of symbols]

10: Wafer chamfering device, 20: Wafer table,
30: grinding wheel, 32: grinding wheel spindle, 34: grinding wheel motor, W: wafer, θ: rotation axis of wafer table, γ
... Rotary axis of grindstone 40 ... Wafer chamfering device, 42 ... Wafer feed unit, 44 ... Outer periphery rough polishing unit, 46 ... Notch processing unit, 48 ... Outer periphery fine polishing unit, 56 ... Y axis table, 7
0: X-axis table, 86: Z-axis table, 96: θ-axis motor, 100: Wafer table, 108: Rough grinding wheel for outer circumference, 122R: Rough grinding wheel for notch, 122F: Fine grinding wheel for notch, 136: Outer circumference Precision grinding wheel, C ... circular part, N
O: Notch, NR: Notch corner 200: Wafer chamfering device, 212: Supply / recovery unit, 2
14: measurement transport section, 216: measurement section, 218: processing section,
Reference numeral 220: cleaning unit, 222: processing / conveying unit, 230: wafer cassette, 234: supply / recovery robot, 240: measuring / conveying robot, 248: post-measuring device, 290: spin cleaning device, 308: transfer arm for supply, 316
… Transfer arm for collection

Claims (10)

[Claims] 1. A wafer chamfering method in which a peripheral edge of a rotating wafer is brought into contact with a peripheral surface of a rotating grindstone to bevel the peripheral edge of the wafer into a predetermined shape. Arrange the rotation axis of the grindstone formed in a shape, abut the peripheral surface of the rotating grindstone on the periphery of the rotating wafer, relatively move the wafer and the grindstone along the chamfered shape of the wafer, A wafer chamfering method, comprising chamfering a periphery of a wafer into a predetermined shape. 2. The wafer and the grindstone are relatively moved along a chamfered shape of the wafer while reciprocatingly moving the wafer and the grindstone along an axial direction of the grindstone, thereby moving a periphery of the wafer. 2. The wafer chamfering method according to claim 1, wherein the wafer is chamfered into a predetermined shape. 3. A wafer chamfering method in which a rotating fine grinding wheel is brought into contact with a peripheral edge of a wafer whose peripheral edge is rough-chamfered into a predetermined shape to finish chamfer the peripheral edge of the wafer. A rotating shaft of a grindstone formed in a cylindrical shape is arranged in a direction perpendicular to the direction of rotation, and a peripheral surface of a rotating fine grinding wheel is brought into contact with a peripheral edge of the rotating wafer. A wafer chamfering method, wherein a peripheral edge of the wafer is finish-chamfered by relatively moving a grinding wheel. 4. The relative movement of the wafer and the grinding wheel along the periphery of the wafer while reciprocating the wafer and the grinding wheel along the axial direction of the grinding wheel. 4. The wafer chamfering method according to claim 3, wherein the edge of the wafer is moved to finish chamfering. 5. A wafer chamfering apparatus for abutting a peripheral edge of a rotating wafer against a peripheral surface of a rotating grindstone and chamfering the peripheral edge of the wafer into a predetermined shape, comprising: a wafer table holding and rotating the wafer; A wafer table moving means for moving the wafer table in an axial direction and a direction orthogonal to the axial direction; a grindstone spindle arranged perpendicular to a rotation axis of the wafer table; and a rotating wheel mounted on the grindstone spindle. Cylindrical whetstone, comprising: moving the wafer table toward the whetstone by the wafer table moving means so that the peripheral edge of the rotating wafer abuts against the peripheral surface of the rotating whetstone; By moving the wafer table along the periphery of the wafer, Wafer chamfering apparatus characterized by chamfering. 6. A wafer chamfering apparatus for abutting a peripheral edge of a rotating wafer on a peripheral surface of a rotating grindstone and chamfering the peripheral edge of the wafer into a predetermined shape, comprising: a wafer table holding and rotating the wafer; A wafer table moving means for moving the wafer table in an axial direction and a direction orthogonal to the axial direction; a rough grinding wheel spindle arranged parallel to a rotation axis of the wafer table; and a rough grinding wheel spindle. Mounted and rotated, a grinding wheel for rough grinding in which a grinding groove of a predetermined cross-sectional shape is formed on the peripheral surface, a grinding wheel spindle for fine grinding arranged perpendicular to a rotation axis of the wafer table, A cylindrical grinding wheel mounted on a grinding wheel spindle and rotating, and the wafer table is moved by the wafer table moving means. The peripheral edge of the wafer was chamfered into a predetermined shape by moving toward the grinding wheel for rough grinding, by contacting the peripheral edge of the rotating wafer with a grinding groove formed on the peripheral surface of the rotating rough grinding wheel. Thereafter, the wafer table is moved by the wafer table moving means toward the grinding wheel for refining, and the periphery of the rotating wafer is brought into contact with the peripheral surface of the rotating grinding wheel, and along the periphery of the wafer. A wafer chamfering apparatus, wherein a peripheral edge of the wafer is subjected to finish chamfering by moving the wafer table. 7. The wafer chamfering apparatus further comprises: a notch grindstone spindle arranged in parallel with a rotation axis of the wafer table; A notch grindstone in which a grinding groove is formed, the wafer table moving means moves the wafer table toward the notch grindstone, and rotates the notch portion of the wafer on the peripheral surface of the notch grindstone. 7. The wafer chamfering apparatus according to claim 5, wherein the notch portion of the wafer is chamfered by being brought into contact with the formed grinding groove. 8. The wafer chamfering apparatus according to claim 6, wherein the fine grinding wheel has a smaller diameter than the rough grinding wheel. 9. A wafer table which holds and rotates a wafer, a wafer table moving means for moving the wafer table in an axial direction and a direction orthogonal to the axial direction, and a wafer table moving means which is orthogonal to a rotation axis of the wafer table. A grindstone spindle, and a cylindrical grindstone that is mounted on the grindstone spindle and rotates, comprising: moving the wafer table toward the grindstone by the wafer table moving means, and rotating the periphery of the rotating wafer. In the wafer chamfering method of the wafer chamfering device for chamfering the periphery of the wafer into a predetermined shape by moving the wafer table along the chamfered shape of the wafer while making contact with the peripheral surface of the rotating grindstone, The position of the rotation axis of the wafer table with respect to the rotation axis of Moving the wafer table to the set position, chamfering the periphery of the wafer, measuring the diameter of the chamfered wafer, and setting the wafer so that the diameter of the chamfered wafer becomes a target value. A wafer chamfering method, comprising correcting a setting position of a table. 10. A wafer table which holds and rotates a wafer, a wafer table moving means for moving the wafer table in an axial direction and a direction orthogonal to the axial direction, and a wafer table moving means which is orthogonal to a rotation axis of the wafer table. A grindstone spindle, and a cylindrical grindstone that is mounted on the grindstone spindle and rotates, comprising: moving the wafer table toward the grindstone by the wafer table moving means, and rotating the periphery of the rotating wafer. In the wafer chamfering method of the wafer chamfering device for chamfering the periphery of the wafer into a predetermined shape by moving the wafer table along the chamfered shape of the wafer while making contact with the peripheral surface of the rotating grindstone, Position of the rotation axis of the wafer table with respect to the rotation axis of Moving the wafer table to the set position, chamfering the periphery of the wafer, measuring the surface width of the chamfered wafer, and setting the surface width of the chamfered wafer to a target value. Correcting the set position of the wafer table.