CN114734333A - Chamfering method - Google Patents
Chamfering method Download PDFInfo
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- CN114734333A CN114734333A CN202210481041.1A CN202210481041A CN114734333A CN 114734333 A CN114734333 A CN 114734333A CN 202210481041 A CN202210481041 A CN 202210481041A CN 114734333 A CN114734333 A CN 114734333A
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 100
- 238000010586 diagram Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
The invention discloses a chamfering method, which comprises the following steps: selecting the type of the grinding wheel matched with the wafer to be processed according to the material of the wafer to be processed; mounting the wafer to be processed and the selected grinding wheel on a chamfering device; carrying out origin point tool setting operation on a wafer to be processed and a grinding wheel; setting the motion direction of a grinding wheel on the chamfering device as a first direction and a second direction, and setting the motion direction of a wafer to be processed as a third direction; setting the rotating speed of the grinding wheel to be different according to different materials of the wafer to be processed; setting different processing parameters on the chamfering device according to different profile shapes of the wafer to be processed, and chamfering the position from the original point of the wafer to be processed to the upper end face of the wafer to be processed; and chamfering the position from the original point of the wafer to be processed to the lower end face of the wafer to be processed. The chamfering method can process different profiles of different wafers to be processed, reduce the replacement frequency of the grinding wheel, improve the processing efficiency and avoid the occurrence of end face burrs.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a chamfering method.
Background
At present, the profile grinding wheel chamfering technology is mainly used for chamfering semiconductor substrates, namely, grinding wheels of one specification type can only process one edge profile. When the profile grinding wheel chamfering technology is used for chamfering, each groove needs to be aligned with a wafer, the wafer after being aligned slowly approaches to the grinding wheel groove rotating at a high speed until the wafer is contacted with the grinding wheel groove, grinding is carried out, the wafer rotates slowly for a plurality of circles to achieve chamfering with a target diameter, and the edge of the wafer after being chamfered is copied to obtain a profile shape consistent with the grinding wheel groove shape.
However, the above-mentioned profile grinding wheel chamfering technique has the following drawbacks: 1) the groove shape of the grinding wheel is fixed, so that the R-shaped chamfer, the T-shaped chamfer and the asymmetric chamfer cannot be considered at the same time, if the profile appearance needs to be changed, the grinding groove of the chamfer grinding wheel needs to be redesigned and machined, the operation is complicated, and a certain grinding wheel machining period is needed; 2) the service life of the grinding wheel groove is short, the grinding wheel groove can be gradually deformed to lose the originally designed grinding wheel groove shape along with the gradual increase of the processing quantity, and the grinding wheel groove is forced to be replaced by a new groove under the condition that the grinding force still exists; 3) the roughness quality of the profile chamfer on the chamfer end face cannot be stable, and the phenomenon of end face burrs occasionally occurs.
Therefore, how to provide a chamfering method not only can consider a plurality of chamfering types such as R-type, T-type and asymmetric chamfering, but also can greatly reduce the frequency of replacing the grinding wheel, improve the processing efficiency, and improve the quality of the chamfered end face is a technical problem that needs to be solved urgently by the technical staff in the field.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a chamfering method, which can not only consider a plurality of chamfering types such as R-type, T-type and asymmetric chamfering, but also greatly reduce the grinding wheel replacement frequency, improve the machining efficiency, and improve the quality of the chamfered end face.
In order to achieve the purpose, the invention provides the following technical scheme:
a chamfering method comprising the steps of:
1) selecting the type of the grinding wheel matched with the wafer to be processed according to the material of the wafer to be processed;
2) mounting the wafer to be processed and the selected grinding wheel on a chamfering device;
3) carrying out origin point tool setting operation on a wafer to be processed and a grinding wheel;
4) setting the motion direction of a grinding wheel as a first direction and a second direction on a chamfering device, and setting the motion direction of a wafer to be processed as a third direction;
setting the rotating speed of the grinding wheel to be different according to different materials of the wafer to be processed;
setting different processing parameters on the chamfering device according to different profile appearances of the wafer to be processed, calculating a first target distance and a first target speed of the grinding wheel moving along a first direction according to the different processing parameters, calculating a second target distance and a second target speed of the grinding wheel moving along a second direction, and calculating a third target distance and a third target speed of the wafer to be processed moving along a third direction;
5) the grinding wheel is controlled to move for a first target distance along a first direction at a first target speed, the wafer to be processed is controlled to move for a second target distance along a third direction at a third target speed, and chamfering is carried out on the position from the original point of the wafer to be processed to the upper end face of the wafer to be processed;
6) controlling the grinding wheel and the wafer to be processed to return to the original point initial position;
7) controlling the grinding wheel to move along a second direction at a second target speed
The second target distance is used for controlling the wafer to be processed to move along the third direction at a third target speed by a third target distance so as to chamfer the position from the original point of the wafer to be processed to the lower end face of the wafer to be processed;
8) and controlling the grinding wheel and the wafer to be processed to return to the original point initial position.
Preferably, the chamfer of the wafer to be processed is a T-shaped chamfer.
Preferably, the chamfer of the wafer to be processed is an R-type chamfer.
Preferably, the chamfer of the wafer to be processed is an asymmetric chamfer.
Preferably, the grinding wheel is a metal bond diamond grinding wheel, or a ceramic bond diamond grinding wheel, or a resin bond diamond grinding wheel;
the diamond granularity of the grinding wheel is 300# -3000 #.
Preferably, in the step 3), when the grinding wheel moves in the first direction, the grinding wheel rotates in the clockwise direction; when the grinding wheel moves in the second direction, the grinding wheel rotates in the counterclockwise direction.
Preferably, in step 4), the processing parameters include a size of a face width of the chamfered wafer of the wafer to be processed, a radius of the chamfered wafer of the wafer to be processed, and an included angle between the face width and a plane of the chamfered wafer of the wafer to be processed.
Preferably, in step 4), the processing parameter includes a length of the end face of the wafer chamfered after the wafer to be processed is chamfered.
Preferably, in the step 4), the first target distance is the same as the second target distance, and the first target speed is the same as the second target speed; or the first target distance and the second target distance are different, and the first target speed and the second target speed are different.
Preferably, in the step 4), the rotation speed of the grinding wheel is 1000rpm to 5000rpm, and the rotation speed of the wafer to be processed is 1rpm to 280 rpm.
According to the technical scheme, the chamfering method disclosed by the embodiment of the invention has the advantages that the movement direction of the grinding wheel and the rotating speed of the grinding wheel are preset on the chamfering device, different processing parameters are set according to different profile features of the wafer to be processed, and the profile feature of the chamfer from the original point of the wafer to be processed to the upper end face of the wafer to be processed can be determined according to different first target distances and first target speeds of the grinding wheel and third target distances and third target speeds of the wafer to be processed; and determining the profile appearance of the chamfer from the origin of the wafer to be processed to the end face of the wafer to be processed according to the different second target distance and second target speed of the grinding wheel and the third target distance and third target speed of the wafer to be processed. Therefore, the chamfering method can process different profile shapes of different wafers to be processed, and in addition, because the grinding wheel groove is not arranged, the grinding wheel groove does not need to be replaced, the replacement frequency of the grinding wheel can be greatly reduced, the processing efficiency is improved, and the phenomenon of end face burrs is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art are briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic flow chart illustrating a chamfering method according to an embodiment of the present invention;
FIG. 2 is a schematic view of a structure of a grinding wheel and a wafer to be processed during chamfering according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a T-shaped chamfer disclosed in the embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an R-shaped chamfer disclosed in the embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an asymmetric chamfer disclosed in the embodiment of the present invention;
fig. 6 is a schematic structural view of an R-shaped chamfer to be processed according to an embodiment of the present invention.
Wherein, each part name is as follows:
100 is a grinding wheel, 200 is a wafer to be processed, and 300 is a T-shaped chamfer. 400 are R-shaped chamfers and 500 are asymmetric chamfers.
Detailed Description
In view of the above, the core of the present invention is to provide a chamfering method, which can not only consider a plurality of chamfering types such as R-type, T-type and asymmetric chamfering, but also greatly reduce the grinding wheel replacement frequency, improve the machining efficiency, and improve the quality of the chamfered end face.
In order to make the technical field of the invention better understand, the invention is further described in detail with reference to the accompanying drawings and the detailed description, and please refer to the figures 1 to 6.
Referring to fig. 1, a chamfering method disclosed in the embodiment of the present invention includes the following steps:
1) selecting the type of the grinding wheel 100 matched with the wafer 200 to be processed according to the material of the wafer 200 to be processed; 2) mounting the wafer 200 to be processed and the selected grinding wheel 100 on a chamfering device; 3) carrying out origin point tool setting operation on the wafer 200 to be processed and the grinding wheel 100; 4) setting the moving direction of the grinding wheel 100 as a first direction and a second direction on the chamfering device, and setting the moving direction of the wafer 200 to be processed as a third direction; setting the rotating speed of the grinding wheel 100 to be different according to different materials of the wafer 200 to be processed; according to different profile appearances of the wafer 200 to be processed, different processing parameters are set on the chamfering device, a first target distance and a first target speed of the grinding wheel 100 moving along a first direction can be calculated according to the different processing parameters, a second target distance and a second target speed of the grinding wheel 100 moving along a second direction can be calculated, and a third target distance and a third target speed of the wafer 200 to be processed moving along a third direction can be calculated; 5) controlling the grinding wheel 100 to move for a first target distance along the first direction at a first target speed, and controlling the wafer 200 to be processed to move for a second target distance along the third direction at a third target speed, so as to chamfer the position from the origin of the wafer 200 to be processed to the upper end face of the wafer 200 to be processed; 6) controlling the grinding wheel 100 and the wafer 200 to be processed to return to the original point initial position; 7) controlling the grinding wheel 100 to move for a second target distance along the second direction at a second target speed, and controlling the wafer 200 to be processed to move for a third target distance along the third direction at a third target speed so as to chamfer the position from the origin of the wafer 200 to be processed to the lower end face of the wafer 200 to be processed; 8) the grinding wheel 100 and the wafer 200 to be processed are both controlled to return to the original position of origin.
According to the chamfering method disclosed by the embodiment of the invention, the movement direction of the grinding wheel 100, the rotating speed of the grinding wheel 100 and different processing parameters are set on the chamfering device in advance according to different profile features of the wafer 200 to be processed, and the chamfering profile from the original point of the wafer 200 to be processed to the upper end face of the wafer 200 to be processed can be determined according to different first target distances and first target speeds of the grinding wheel 100 and third target distances and third target speeds of the wafer 200 to be processed; according to the different second target distance and second target speed of the grinding wheel 100 and the third target distance and third target speed of the wafer 200 to be processed, the profile of the chamfer from the origin of the wafer 200 to be processed to the position of the lower end face of the wafer 200 to be processed can be determined. Therefore, the chamfering method can process different profile shapes of different wafers 200 to be processed, and in addition, because the grinding wheel groove is not arranged, the grinding wheel groove does not need to be replaced, the replacement frequency of the grinding wheel 100 can be greatly reduced, the processing efficiency is improved, and the phenomenon of end face burrs is avoided.
It should be explained that the origin is the contact point of the edge of the grinding wheel 100 with the outer end face of the wafer 200 to be processed. The first direction is vertically upward along the Z-axis, the second direction is vertically downward along the Z-axis, and the third direction is horizontally toward the grinding wheel 100 along the Y-axis.
It should be noted that in the chamfering method disclosed in the embodiment of the present invention, the grinding wheel 100 is driven to rotate by the motor shaft of the first motor, and the wafer 200 to be processed is driven to rotate by the motor shaft of the second motor.
The embodiment of the present invention does not limit the specific profile of the chamfer of the wafer 200 to be processed, and the structure meeting the use requirement of the present invention is within the protection scope of the present invention.
In order to optimize the above embodiments, the chamfer of the wafer 200 to be processed, which can be processed by the above chamfering method according to the embodiments of the present invention, may be the T-shaped chamfer 300, the R-shaped chamfer 400, or the asymmetric chamfer 500, and the structure meeting the use requirement of the present invention is within the protection scope of the present invention.
The material and granularity of the grinding wheel 100 are not particularly limited in the embodiment of the invention, and according to the difficulty of material processing, the grinding wheel 100 can be a metal bond diamond grinding wheel, a ceramic bond diamond grinding wheel or a resin bond diamond grinding wheel, wherein the diamond granularity of the grinding wheel 100 is preferably 300# to 3000 #.
It should be noted that, in step 3) disclosed in the embodiment of the present invention, when the grinding wheel 100 moves in the first direction, the grinding wheel 100 rotates in the clockwise direction; when the grinding wheel 100 moves in the second direction, the grinding wheel 100 rotates in a counterclockwise direction, specifically referring to the clockwise and counterclockwise labels in fig. 1.
Referring to fig. 6, the processing parameters disclosed in the embodiment of the present invention include the dimension of the width of the wafer after the chamfer of the wafer 200 to be processed, the radius R of the wafer after the chamfer of the wafer 200 to be processed, and the included angle θ between the width and the plane of the wafer after the chamfer of the wafer 200 to be processed.
When processing the T-shaped chamfer, the processing parameters further include the length of the chamfered wafer end face of the wafer 200 to be processed, which needs to be input into a control system of the chamfering device and then calculated according to a correlation formula.
Since the calculation formula is the prior art, the specific calculation formula is not elaborated in detail in the embodiment of the present invention.
It should be noted that the first target distance and the second target distance disclosed in the embodiment of the present invention may be the same, and the first target speed and the second target speed are the same; of course, the first target distance and the second target distance may be different, and the first target speed and the second target speed may be the same or different.
According to the embodiment of the invention, the corresponding first target distance, second target distance, first target speed and second target speed are selected according to the shape and contour of different T-shaped chamfers 300, R-shaped chamfers 400 or asymmetric chamfers 500.
Referring to fig. 3 and 4, when the T-type chamfer 300 and the R-type chamfer are processed, since the shape from the origin of the wafer 200 to be processed to the upper end surface of the wafer 200 is the same as the shape from the origin to the lower end surface of the wafer 200 to be processed, the first target distance and the second target distance are set to be the same, and the first target speed and the second target speed are set to be the same.
Referring to fig. 5, when processing the asymmetric chamfer, since the shape from the origin of the wafer 200 to be processed to the upper end surface of the wafer 200 to be processed is different from the shape from the origin of the wafer 200 to be processed to the lower end surface, the first target distance and the second target distance are set to be different, and the first target speed and the second target speed are set to be different.
The embodiment of the present invention does not specifically limit the rotation speed of the grinding wheel 100 and the rotation speed of the wafer 200 to be processed, and the structure satisfying the use requirement of the present invention is within the protection scope of the present invention.
As a preferred embodiment, the rotation speed of the grinding wheel 100 disclosed in the embodiment of the present invention is 1000rpm to 5000rpm, and the rotation speed of the wafer 200 to be processed is 1rpm to 280 rpm. The selection can be made by those skilled in the art according to the actual situation.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that there may be a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A chamfering method is characterized by comprising the following steps:
1) selecting the type of a grinding wheel matched with the wafer to be processed according to the material of the wafer to be processed;
2) mounting the wafer to be processed and the selected grinding wheel on a chamfering device;
3) carrying out origin point tool setting operation on the wafer to be processed and the grinding wheel;
4) setting the motion direction of the grinding wheel as a first direction and a second direction on the chamfering device, and setting the motion direction of the wafer to be processed as a third direction;
setting the rotating speed of the grinding wheel to be different according to different materials of the wafer to be processed;
setting different processing parameters on the chamfering device according to different profile appearances of the wafer to be processed, calculating a first target distance and a first target speed of the grinding wheel moving along the first direction according to the different processing parameters, calculating a second target distance and a second target speed of the grinding wheel moving along the second direction, and calculating a third target distance and a third target speed of the wafer to be processed moving along the third direction;
5) controlling the grinding wheel to move for the first target distance along the first direction at the first target speed, and controlling the wafer to be processed to move for the second target distance along the third direction at the third target speed so as to chamfer the position from the original point of the wafer to be processed to the upper end face of the wafer to be processed;
6) controlling the grinding wheel and the wafer to be processed to return to the original point initial position;
7) controlling the grinding wheel to move the second target distance along the second direction at the second target speed, and controlling the wafer to be processed to move the third target distance along the third direction at the third target speed so as to chamfer the position from the original point of the wafer to be processed to the lower end face of the wafer to be processed;
8) and controlling the grinding wheel and the wafer to be processed to return to the original point initial position.
2. The chamfering method according to claim 1, wherein the chamfer of the wafer to be processed is a T-shaped chamfer.
3. The chamfering method according to claim 1, wherein the chamfer of the wafer to be processed is an R-type chamfer.
4. The chamfering method according to claim 1, wherein the chamfer of the wafer to be processed is an asymmetric chamfer.
5. The chamfering method according to claim 1, wherein the grinding wheel is a metal bond diamond grinding wheel, or a ceramic bond diamond grinding wheel, or a resin bond diamond grinding wheel;
the diamond granularity of the grinding wheel is 300# to 3000 #.
6. The chamfering method according to claim 1, wherein in the step 3), when the grinding wheel moves in a first direction, the grinding wheel rotates in a clockwise direction; when the grinding wheel moves along the second direction, the grinding wheel rotates along the anticlockwise direction.
7. The chamfering method according to claim 1, wherein in the step 4), the processing parameters include a dimension of a width of the wafer chamfered by the wafer to be processed, a radius of the wafer chamfered by the wafer to be processed, and an angle between the width and a plane of the wafer chamfered by the wafer to be processed.
8. The chamfering method according to claim 1, wherein in the step 4), the processing parameter includes a wafer end face length after the wafer to be processed is chamfered.
9. The chamfering method according to claim 1, wherein in the step 4), the first target distance and the second target distance are the same, and the first target speed and the second target speed are the same; or the first target distance and the second target distance are different, and the first target speed and the second target speed are different.
10. The chamfering method according to claim 1, wherein in the step 4), the rotation speed of the grinding wheel is 1000rpm to 5000rpm, and the rotation speed of the wafer to be processed is 1rpm to 280 rpm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210481041.1A CN114734333A (en) | 2022-05-05 | 2022-05-05 | Chamfering method |
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| CN202210481041.1A CN114734333A (en) | 2022-05-05 | 2022-05-05 | Chamfering method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115446999A (en) * | 2022-09-27 | 2022-12-09 | 河北同光半导体股份有限公司 | Method for improving local contour quality of silicon carbide substrate |
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| US6302769B1 (en) * | 1998-04-13 | 2001-10-16 | Nippei Toyama Corporation | Method for chamfering a wafer |
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| CN115446999A (en) * | 2022-09-27 | 2022-12-09 | 河北同光半导体股份有限公司 | Method for improving local contour quality of silicon carbide substrate |
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