SG128588A1 - Thermal processing equipment calibration method - Google Patents

Thermal processing equipment calibration method

Info

Publication number
SG128588A1
SG128588A1 SG200603955A SG200603955A SG128588A1 SG 128588 A1 SG128588 A1 SG 128588A1 SG 200603955 A SG200603955 A SG 200603955A SG 200603955 A SG200603955 A SG 200603955A SG 128588 A1 SG128588 A1 SG 128588A1
Authority
SG
Singapore
Prior art keywords
thickness profile
calibration
test substrate
layer
substrate
Prior art date
Application number
SG200603955A
Other languages
English (en)
Inventor
Marlene Bras
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG128588A1 publication Critical patent/SG128588A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Gasification And Melting Of Waste (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
SG200603955A 2005-06-10 2006-06-09 Thermal processing equipment calibration method SG128588A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05291261A EP1734571B1 (en) 2005-06-10 2005-06-10 Thermal processing equipment calibration method

Publications (1)

Publication Number Publication Date
SG128588A1 true SG128588A1 (en) 2007-01-30

Family

ID=34942404

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200603955A SG128588A1 (en) 2005-06-10 2006-06-09 Thermal processing equipment calibration method

Country Status (8)

Country Link
US (1) US7225095B2 (ja)
EP (1) EP1734571B1 (ja)
JP (1) JP4279832B2 (ja)
KR (1) KR100712040B1 (ja)
CN (1) CN100508110C (ja)
AT (1) ATE405946T1 (ja)
DE (1) DE602005009159D1 (ja)
SG (1) SG128588A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7619184B2 (en) * 2003-03-04 2009-11-17 Micron Technology, Inc. Multi-parameter process and control method
US7700376B2 (en) * 2005-04-06 2010-04-20 Applied Materials, Inc. Edge temperature compensation in thermal processing particularly useful for SOI wafers
US7951616B2 (en) * 2006-03-28 2011-05-31 Lam Research Corporation Process for wafer temperature verification in etch tools
US8206996B2 (en) * 2006-03-28 2012-06-26 Lam Research Corporation Etch tool process indicator method and apparatus
DE102007019122B3 (de) 2007-04-23 2008-06-26 Texas Instruments Deutschland Gmbh Verfahren zur Temperaturregelung während eines Epitaxieschrittes von Halbleiterwafern
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
FR2948494B1 (fr) * 2009-07-27 2011-09-16 Soitec Silicon On Insulator Procede de determination d'une position centree d'un substrat semi-conducteur dans un four de recuit, dispositif pour traiter thermiquement des substrats semi-conducteurs et procede pour calibrer un tel dispositif
US20150169422A1 (en) * 2013-12-13 2015-06-18 Metal Industries Research & Development Centre Evaluation method for calibration of processing equipment
CN107275208B (zh) * 2017-05-31 2019-09-17 上海华力微电子有限公司 晶圆退火的热量补偿方法
CN109698141A (zh) * 2018-12-27 2019-04-30 上海华力集成电路制造有限公司 一种提升栅氧厚度均匀性的方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB974111A (en) 1961-03-16 1964-11-04 Gen Aniline & Film Corp Organic compositions incorporating ultra-violet light absorbers
GB1052997A (ja) 1963-11-13
US3700754A (en) 1967-02-23 1972-10-24 American Cyanamid Co Compositions of polymers of methyl methacrylate and polymers of ethylene
US4320174A (en) 1980-09-15 1982-03-16 The B. F. Goodrich Company Transparent and translucent vinyl polymeric composite
DE3307051A1 (de) 1983-03-01 1984-09-06 Basf Ag, 6700 Ludwigshafen Schwerentflammbare, transparente poly-(arylether-aryl-sulfon)-formmassen, verfahren zu deren herstellung sowie deren verwendung
US4935275A (en) 1987-04-27 1990-06-19 Toyoda Gosei Co., Ltd. Polyurethane material for decorative parts
JPH05500987A (ja) 1990-04-16 1993-02-25 アトケム　ノース　アメリカ，インコーポレイティド 表面を改質して、紫外光に対して安定化されたポリ塩化ビニル物品
US5662469A (en) * 1991-12-13 1997-09-02 Tokyo Electron Tohoku Kabushiki Kaisha Heat treatment method
JPH05267200A (ja) * 1992-03-24 1993-10-15 Hitachi Ltd 半導体熱処理装置
JP3103227B2 (ja) * 1992-12-09 2000-10-30 株式会社日立製作所 半導体装置の製造方法
US5512620A (en) 1994-05-05 1996-04-30 General Electric Company Benzoxazolyl optical brightners in and for thermoplastic compositions
DE4443355A1 (de) 1994-12-06 1996-06-13 Roehm Gmbh Flugzeugverglasung mit erhöhter Lichtstabilität, verbesserter chemischer Stabilität und verbesserter Wärmeformbeständigkeit
DE19522118C1 (de) 1995-06-19 1997-03-13 Hoechst Ag Amorphe, transparente, UV-stabilisierte Platte aus einem kristallisierbaren Thermoplast, Verfahren zu deren Herstellung sowie deren Verwendung
US5674579A (en) 1995-11-20 1997-10-07 Elf Atochem S.A. Flexible translucent polyamide composition
SG68631A1 (en) 1996-09-06 1999-11-16 Gen Electric Improved color stabilization of polycarbonate resins
DE19754299A1 (de) 1997-12-08 1999-06-24 Basf Ag Transparente Mischungen enthaltend thermoplastische Polyisocyanat-Polyadditionsprodukte, Polyvinylchlorid und Stabilisatoren
US6200023B1 (en) * 1999-03-15 2001-03-13 Steag Rtp Systems, Inc. Method for determining the temperature in a thermal processing chamber
JP4426024B2 (ja) * 1999-09-02 2010-03-03 東京エレクトロン株式会社 熱処理装置の温度校正方法
US6395100B1 (en) * 2000-01-03 2002-05-28 Advanced Micro Devices, Inc. Method of improving vacuum quality in semiconductor processing chambers
JP4459357B2 (ja) * 2000-02-01 2010-04-28 東京エレクトロン株式会社 温度調整方法及び温度調整装置
KR100757552B1 (ko) * 2000-07-25 2007-09-10 동경 엘렉트론 주식회사 열처리장치, 열처리방법 및 기록매체
JP2002261036A (ja) * 2001-02-28 2002-09-13 Dainippon Screen Mfg Co Ltd 熱処理装置
FR2846786B1 (fr) * 2002-11-05 2005-06-17 Procede de recuit thermique rapide de tranches a couronne
US7700376B2 (en) 2005-04-06 2010-04-20 Applied Materials, Inc. Edge temperature compensation in thermal processing particularly useful for SOI wafers

Also Published As

Publication number Publication date
US20060284720A1 (en) 2006-12-21
CN100508110C (zh) 2009-07-01
US7225095B2 (en) 2007-05-29
EP1734571B1 (en) 2008-08-20
EP1734571A1 (en) 2006-12-20
KR20060128609A (ko) 2006-12-14
DE602005009159D1 (de) 2008-10-02
CN1877791A (zh) 2006-12-13
JP2006344924A (ja) 2006-12-21
ATE405946T1 (de) 2008-09-15
JP4279832B2 (ja) 2009-06-17
KR100712040B1 (ko) 2007-04-27

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