WO2009054250A1 - 半導体基板、半導体基板の検査方法 - Google Patents

半導体基板、半導体基板の検査方法 Download PDF

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Publication number
WO2009054250A1
WO2009054250A1 PCT/JP2008/068012 JP2008068012W WO2009054250A1 WO 2009054250 A1 WO2009054250 A1 WO 2009054250A1 JP 2008068012 W JP2008068012 W JP 2008068012W WO 2009054250 A1 WO2009054250 A1 WO 2009054250A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
semiconductor
film
inspecting
uniformized
Prior art date
Application number
PCT/JP2008/068012
Other languages
English (en)
French (fr)
Inventor
Kaoru Shibata
Shinji Okabayashi
Yasuhiro Honzu
Masato Irikura
Fumitake Nakanishi
Original Assignee
Sumitomo Electric Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries, Ltd. filed Critical Sumitomo Electric Industries, Ltd.
Priority to EP08840886A priority Critical patent/EP2204847A1/en
Priority to US12/520,986 priority patent/US20100013058A1/en
Publication of WO2009054250A1 publication Critical patent/WO2009054250A1/ja

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
    • G01N21/894—Pinholes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

  半導体膜の均一化を達成できる半導体基板を提供する。   この半導体基板１では、直径２インチの半導体基板１一枚あたり１個以上２０個以下のピンホール３が形成されている。これにより、半導体膜形成後の半導体基板１の反り値が減少し、露光後の寸法ばらつきが減少する効果を得ることができる。これはピンホール３の存在によって、半導体基板１表面の転位が解消されるためであると推定される。したがって、半導体膜の膜質の均一化、半導体デバイスの性能の均一化、半導体基板１の割れ防止を図ることができる。
PCT/JP2008/068012 2007-10-24 2008-10-03 半導体基板、半導体基板の検査方法 WO2009054250A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08840886A EP2204847A1 (en) 2007-10-24 2008-10-03 Semiconductor substrate and method for inspecting semiconductor substrate
US12/520,986 US20100013058A1 (en) 2007-10-24 2008-10-03 Semiconductor Wafer and Semiconductor Wafer Inspection Method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-276309 2007-10-24
JP2007276309 2007-10-24
JP2008212724A JP2009124104A (ja) 2007-10-24 2008-08-21 半導体基板、半導体基板の検査方法
JP2008-212724 2008-08-21

Publications (1)

Publication Number Publication Date
WO2009054250A1 true WO2009054250A1 (ja) 2009-04-30

Family

ID=40579356

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068012 WO2009054250A1 (ja) 2007-10-24 2008-10-03 半導体基板、半導体基板の検査方法

Country Status (7)

Country Link
US (1) US20100013058A1 (ja)
EP (1) EP2204847A1 (ja)
JP (1) JP2009124104A (ja)
KR (1) KR20100077127A (ja)
RU (1) RU2009123956A (ja)
TW (1) TW200931557A (ja)
WO (1) WO2009054250A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102023168B (zh) * 2010-11-08 2013-04-17 北京大学深圳研究生院 半导体晶圆表面的芯片检测方法及系统
JP7468429B2 (ja) 2021-03-29 2024-04-16 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
JP7482825B2 (ja) 2021-04-19 2024-05-14 三菱電機株式会社 検査装置、半導体基板の検査方法、半導体基板の製造方法、および半導体装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06183879A (ja) * 1992-12-17 1994-07-05 Ibiden Co Ltd 液相エピタキシーによる単結晶薄膜の製造方法
JP2001237286A (ja) * 2000-02-21 2001-08-31 Kyoshin Denki Kk Ｓｉウエハ−検査装置およびＳｉウエハ−検査方法
WO2002099169A1 (fr) * 2001-06-04 2002-12-12 The New Industry Research Organization Carbure de silicium monocristal et son procede de production
JP2004309426A (ja) * 2003-04-10 2004-11-04 Denso Corp 透光性基板の評価方法及び透光性基板の評価装置
JP2005311261A (ja) * 2004-04-26 2005-11-04 Nippon Steel Corp 炭化珪素製放熱板
JP2007269627A (ja) * 2002-03-19 2007-10-18 Central Res Inst Of Electric Power Ind 基板から継続するマイクロパイプを低減させるＳｉＣ結晶の製造方法およびＳｉＣ結晶、ＳｉＣ単結晶膜、ＳｉＣ半導体素子、ＳｉＣ単結晶基板および電子デバイス、ならびにＳｉＣバルク結晶の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06183879A (ja) * 1992-12-17 1994-07-05 Ibiden Co Ltd 液相エピタキシーによる単結晶薄膜の製造方法
JP2001237286A (ja) * 2000-02-21 2001-08-31 Kyoshin Denki Kk Ｓｉウエハ−検査装置およびＳｉウエハ−検査方法
WO2002099169A1 (fr) * 2001-06-04 2002-12-12 The New Industry Research Organization Carbure de silicium monocristal et son procede de production
JP2007269627A (ja) * 2002-03-19 2007-10-18 Central Res Inst Of Electric Power Ind 基板から継続するマイクロパイプを低減させるＳｉＣ結晶の製造方法およびＳｉＣ結晶、ＳｉＣ単結晶膜、ＳｉＣ半導体素子、ＳｉＣ単結晶基板および電子デバイス、ならびにＳｉＣバルク結晶の製造方法
JP2004309426A (ja) * 2003-04-10 2004-11-04 Denso Corp 透光性基板の評価方法及び透光性基板の評価装置
JP2005311261A (ja) * 2004-04-26 2005-11-04 Nippon Steel Corp 炭化珪素製放熱板

Also Published As

Publication number Publication date
KR20100077127A (ko) 2010-07-07
TW200931557A (en) 2009-07-16
RU2009123956A (ru) 2010-12-27
EP2204847A1 (en) 2010-07-07
US20100013058A1 (en) 2010-01-21
JP2009124104A (ja) 2009-06-04

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