SG128576A1 - Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate, and epitaxial substrate - Google Patents

Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate, and epitaxial substrate

Info

Publication number
SG128576A1
SG128576A1 SG200603825A SG200603825A SG128576A1 SG 128576 A1 SG128576 A1 SG 128576A1 SG 200603825 A SG200603825 A SG 200603825A SG 200603825 A SG200603825 A SG 200603825A SG 128576 A1 SG128576 A1 SG 128576A1
Authority
SG
Singapore
Prior art keywords
substrate
compound semiconductor
semiconductor substrate
epitaxial
processes
Prior art date
Application number
SG200603825A
Other languages
English (en)
Inventor
Takayuki Nishiura
Yusuke Horie
Mitsutaka Tsubokura
Osamu Ohama
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of SG128576A1 publication Critical patent/SG128576A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)
SG200603825A 2005-06-10 2006-06-05 Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate, and epitaxial substrate SG128576A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005171481A JP4872246B2 (ja) 2005-06-10 2005-06-10 半絶縁性ＧａＡｓ基板及びエピタキシャル基板

Publications (1)

Publication Number Publication Date
SG128576A1 true SG128576A1 (en) 2007-01-30

Family

ID=37025135

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200603825A SG128576A1 (en) 2005-06-10 2006-06-05 Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate, and epitaxial substrate

Country Status (7)

Country Link
US (1) US20060281328A1 (zh)
EP (1) EP1732110A3 (zh)
JP (1) JP4872246B2 (zh)
KR (1) KR20060128679A (zh)
CN (1) CN1877854A (zh)
SG (1) SG128576A1 (zh)
TW (3) TWI618118B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060024772A (ko) * 2003-06-16 2006-03-17 스미토모덴키고교가부시키가이샤 질화물 반도체 결정 표면의 가공 방법 및 그 방법에 의해얻어진 질화물 반도체 결정
JP4305574B1 (ja) 2009-01-14 2009-07-29 住友電気工業株式会社 Ｉｉｉ族窒化物基板、それを備える半導体デバイス、及び、表面処理されたｉｉｉ族窒化物基板を製造する方法
JP5287463B2 (ja) * 2009-04-20 2013-09-11 住友電気工業株式会社 エピタキシャル層付きｉｉｉ族窒化物基板、及びそれを用いた半導体デバイス
JP4513927B1 (ja) 2009-09-30 2010-07-28 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP5365454B2 (ja) 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
DE202012013658U1 (de) * 2011-05-18 2019-04-30 Sumitomo Electric Industries, Ltd. Verbindungshalbleitersubstrat
JP5692283B2 (ja) * 2013-05-20 2015-04-01 住友電気工業株式会社 Ｉｉｉ族窒化物基板、及びそれを用いた半導体デバイス
JP5648726B2 (ja) * 2013-09-11 2015-01-07 住友電気工業株式会社 ＧａＮ基板及びその製造方法、エピタキシャル基板、並びに、半導体デバイス

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168998A (en) * 1978-12-06 1979-09-25 Mitsubishi Monsanto Chemical Co. Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
JP2560562B2 (ja) * 1991-04-30 1996-12-04 住友化学工業株式会社 エピタキシャル成長化合物半導体結晶
JPH05110135A (ja) * 1991-10-14 1993-04-30 Nikko Kyodo Co Ltd 多層エピタキシヤル結晶構造
JP3204804B2 (ja) * 1993-06-25 2001-09-04 日本特殊陶業株式会社 ダイヤモンドの選択形成法
JP2576766B2 (ja) * 1993-07-08 1997-01-29 日本電気株式会社 半導体基板の製造方法
JP2699928B2 (ja) * 1995-05-30 1998-01-19 日本電気株式会社 化合物半導体基板の前処理方法
US6462361B1 (en) * 1995-12-27 2002-10-08 Showa Denko K.K. GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure
JP3667124B2 (ja) * 1998-11-27 2005-07-06 京セラ株式会社 化合物半導体基板の製造方法
JP2001332529A (ja) * 2000-05-19 2001-11-30 Daido Steel Co Ltd 単結晶半導体基板の表面処理方法、および単結晶半導体基板の電極層形成方法
JP2002232082A (ja) * 2000-11-30 2002-08-16 Furukawa Electric Co Ltd:The 埋込型半導体レーザ素子の製造方法、及び埋込型半導体レーザ素子
US6576932B2 (en) * 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
JP4524953B2 (ja) * 2001-05-18 2010-08-18 パナソニック株式会社 窒化物半導体基板の製造方法および窒化物半導体装置の製造方法
JP2003327497A (ja) * 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法
US7122880B2 (en) * 2002-05-30 2006-10-17 Air Products And Chemicals, Inc. Compositions for preparing low dielectric materials
US7386528B2 (en) * 2002-05-31 2008-06-10 American Express Travel Related Services Company, Inc. System and method for acquisition, assimilation and storage of information
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening

Also Published As

Publication number Publication date
US20060281328A1 (en) 2006-12-14
TWI413161B (zh) 2013-10-21
JP4872246B2 (ja) 2012-02-08
JP2006344911A (ja) 2006-12-21
TWI622085B (zh) 2018-04-21
TW201403671A (zh) 2014-01-16
EP1732110A3 (en) 2011-01-12
EP1732110A2 (en) 2006-12-13
KR20060128679A (ko) 2006-12-14
CN1877854A (zh) 2006-12-13
TW201740436A (zh) 2017-11-16
TW200707544A (en) 2007-02-16
TWI618118B (zh) 2018-03-11

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