SG127672A1 - Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device - Google Patents

Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device

Info

Publication number
SG127672A1
SG127672A1 SG200105373A SG200105373A SG127672A1 SG 127672 A1 SG127672 A1 SG 127672A1 SG 200105373 A SG200105373 A SG 200105373A SG 200105373 A SG200105373 A SG 200105373A SG 127672 A1 SG127672 A1 SG 127672A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
laser irradiation
irradiation apparatus
manufacturing semiconductor
processing beam
Prior art date
Application number
SG200105373A
Other languages
English (en)
Inventor
Koichiro Tanaka
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG127672A1 publication Critical patent/SG127672A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements
    • G02B27/095Refractive optical elements
    • G02B27/0955Lenses
    • G02B27/0961Lens arrays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067Dividing the beam into multiple beams, e.g. multifocusing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073Shaping the laser spot
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905Dividing and/or superposing multiple light beams
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements
    • G02B27/095Refractive optical elements
    • G02B27/0955Lenses
    • G02B27/0966Cylindrical lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/12Beam splitting or combining systems operating by refraction only
    • G02B27/123The splitting element being a lens or a system of lenses, including arrays and surfaces with refractive power
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/14Beam splitting or combining systems operating by reflection only
    • G02B27/145Beam splitting or combining systems operating by reflection only having sequential partially reflecting surfaces
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/14Beam splitting or combining systems operating by reflection only
    • G02B27/149Beam splitting or combining systems operating by reflection only using crossed beamsplitting surfaces, e.g. cross-dichroic cubes or X-cubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
SG200105373A 2000-09-01 2001-09-01 Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device SG127672A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000265451 2000-09-01

Publications (1)

Publication Number Publication Date
SG127672A1 true SG127672A1 (en) 2006-12-29

Family

ID=18752713

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200105373A SG127672A1 (en) 2000-09-01 2001-09-01 Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US6650480B2 (zh)
KR (1) KR100863919B1 (zh)
CN (2) CN1697144B (zh)
MY (1) MY138983A (zh)
SG (1) SG127672A1 (zh)
TW (1) TW523791B (zh)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
TW487959B (en) * 1999-08-13 2002-05-21 Semiconductor Energy Lab Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US6970644B2 (en) 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
MY127193A (en) * 2000-12-26 2006-11-30 Semiconductor Energy Lab Laser irradiation apparatus and method of laser irradiation
JP3980465B2 (ja) * 2001-11-09 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
JP3949564B2 (ja) * 2001-11-30 2007-07-25 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
CN1263255C (zh) * 2002-04-03 2006-07-05 三星电子株式会社 以太网无源光网络及点到点模拟方法
US6977775B2 (en) * 2002-05-17 2005-12-20 Sharp Kabushiki Kaisha Method and apparatus for crystallizing semiconductor with laser beams
TW200417270A (en) * 2002-06-27 2004-09-01 Tokyo Electron Ltd Semiconductor processing device
US7081704B2 (en) * 2002-08-09 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7259082B2 (en) * 2002-10-03 2007-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4282985B2 (ja) * 2002-12-27 2009-06-24 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4662411B2 (ja) * 2003-03-14 2011-03-30 日立ビアメカニクス株式会社 レーザ加工装置
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US7450307B2 (en) * 2003-09-09 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
EP1676300B1 (en) * 2003-10-03 2014-10-01 Applied Materials, Inc. Method for annealing a substrate comprising an absorber layer
JP4741822B2 (ja) * 2004-09-02 2011-08-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2006066706A2 (en) * 2004-12-22 2006-06-29 Carl Zeiss Laser Optics Gmbh Optical illumination system for creating a line beam
US7612832B2 (en) * 2005-03-29 2009-11-03 Microsoft Corporation Method and system for video clip compression
JP4498309B2 (ja) * 2005-05-18 2010-07-07 キヤノン株式会社 レーザー干渉による加工方法及び該加工方法で加工された回折格子、反射防止構造
JP2007110064A (ja) 2005-09-14 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール方法及び装置
US7615722B2 (en) * 2006-07-17 2009-11-10 Coherent, Inc. Amorphous silicon crystallization using combined beams from optically pumped semiconductor lasers
JP4478670B2 (ja) * 2006-09-08 2010-06-09 ソニー株式会社 1次元照明装置及び画像生成装置
US8279514B2 (en) * 2007-01-24 2012-10-02 Osram Ag Optoelectronic device
US7851343B2 (en) * 2007-06-14 2010-12-14 Cree, Inc. Methods of forming ohmic layers through ablation capping layers
JP5224218B2 (ja) * 2007-07-23 2013-07-03 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学システム
DE102007047467A1 (de) * 2007-09-28 2009-04-02 Carl Zeiss Microimaging Gmbh Anordnung zur optischen Erfassung von in einer Probe angeregter und/oder rückgestreuter Lichtstrahlung
FR2922325B1 (fr) * 2007-10-12 2010-06-11 Ecole Polytech Homogeneiseur a lame de phase
DE102007049512B4 (de) * 2007-10-15 2010-09-30 Ovd Kinegram Ag Mehrschichtkörper sowie Verfahren zur Herstellung eines Mehrschichtkörpers
JP5467730B2 (ja) * 2008-03-24 2014-04-09 株式会社半導体エネルギー研究所 レーザ照射装置
US7700032B1 (en) * 2008-07-14 2010-04-20 The United States Of America As Represented By The Secretary Of The Navy Formation of microspheres through laser irradiation of a surface
DE102009037141B4 (de) * 2009-07-31 2013-01-03 Carl Zeiss Laser Optics Gmbh Optisches System zum Erzeugen eines Lichtstrahls zur Behandlung eines Substrats
US9069183B2 (en) 2011-09-28 2015-06-30 Applied Materials, Inc. Apparatus and method for speckle reduction in laser processing equipment
KR101865222B1 (ko) * 2011-10-18 2018-06-08 삼성디스플레이 주식회사 레이저 결정화 장치 및 레이저 결정화 방법
CN103839790B (zh) * 2012-11-23 2016-09-28 中芯国际集成电路制造(上海)有限公司 激光退火装置及退火方法
CN104347368A (zh) * 2013-07-26 2015-02-11 上海微电子装备有限公司 多激光的激光退火装置及方法
CN104576336A (zh) * 2013-10-17 2015-04-29 上海华虹宏力半导体制造有限公司 激光退火设备及利用该设备改善硅片表面粗糙度的方法
CN104808343B (zh) * 2014-01-29 2018-03-30 上海微电子装备(集团)股份有限公司 一种激光退火匀光装置
JP6383166B2 (ja) * 2014-03-28 2018-08-29 株式会社Screenホールディングス 光照射装置および描画装置
US10247952B2 (en) * 2015-03-04 2019-04-02 Coherent Lasersystems Gmbh & Co. Kg Polarization-controlled laser line-projector
KR101700392B1 (ko) 2015-05-26 2017-02-14 삼성디스플레이 주식회사 레이저빔 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
US10133187B2 (en) 2015-05-29 2018-11-20 SCREEN Holdings Co., Ltd. Light irradiation apparatus and drawing apparatus
KR102427155B1 (ko) 2015-08-25 2022-07-29 삼성디스플레이 주식회사 레이저 결정화 장치
KR102582652B1 (ko) * 2016-12-21 2023-09-25 삼성디스플레이 주식회사 레이저 결정화 장치
US11318558B2 (en) 2018-05-15 2022-05-03 The Chancellor, Masters And Scholars Of The University Of Cambridge Fabrication of components using shaped energy beam profiles
CN110049095A (zh) * 2019-03-01 2019-07-23 湖北三江航天红峰控制有限公司 一种激光装备数据上工业云平台的方法
DE102019206976B3 (de) * 2019-05-14 2020-11-12 Trumpf Laser Gmbh Optisches System zum Erzeugen zweier Laserfokuslinien sowie Verfahren zum gleichzeitigen Bearbeiten zweier einander gegenüberliegender, paralleler Werkstückseiten eines Werkstücks
CN110091073B (zh) * 2019-05-28 2020-11-20 中国科学院宁波材料技术与工程研究所 多光束耦合激光加工系统及方法
KR20210035368A (ko) * 2019-09-23 2021-04-01 삼성디스플레이 주식회사 백라이트 장치 및 이를 포함하는 3차원 영상 표시 장치
CN111399238B (zh) * 2020-04-27 2021-12-03 中国人民解放军国防科技大学 一种基于行星转的高能激光束近场强度匀化装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959779A (en) * 1997-03-04 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6002523A (en) * 1997-09-30 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Laser illumination method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JPH06232069A (ja) 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6300176B1 (en) 1994-07-22 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP3813269B2 (ja) 1996-11-01 2006-08-23 株式会社半導体エネルギー研究所 レーザー照射システム
JP4056577B2 (ja) 1997-02-28 2008-03-05 株式会社半導体エネルギー研究所 レーザー照射方法
JPH10253916A (ja) 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置
JP4059952B2 (ja) 1997-03-27 2008-03-12 株式会社半導体エネルギー研究所 レーザー光照射方法
JP4086932B2 (ja) 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3770999B2 (ja) 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959779A (en) * 1997-03-04 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6002523A (en) * 1997-09-30 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Laser illumination method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RESEARCH DESCLOSURE VOL. 323, NO. 105 *

Also Published As

Publication number Publication date
MY138983A (en) 2009-08-28
CN1697144B (zh) 2010-04-28
TW523791B (en) 2003-03-11
CN1211687C (zh) 2005-07-20
KR100863919B1 (ko) 2008-10-17
US6650480B2 (en) 2003-11-18
KR20020018630A (ko) 2002-03-08
CN1340849A (zh) 2002-03-20
US20020027716A1 (en) 2002-03-07
CN1697144A (zh) 2005-11-16

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