SG127672A1 - Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device - Google Patents
Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG127672A1 SG127672A1 SG200105373A SG200105373A SG127672A1 SG 127672 A1 SG127672 A1 SG 127672A1 SG 200105373 A SG200105373 A SG 200105373A SG 200105373 A SG200105373 A SG 200105373A SG 127672 A1 SG127672 A1 SG 127672A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- laser irradiation
- irradiation apparatus
- manufacturing semiconductor
- processing beam
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0961—Lens arrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0966—Cylindrical lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/12—Beam splitting or combining systems operating by refraction only
- G02B27/123—The splitting element being a lens or a system of lenses, including arrays and surfaces with refractive power
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
- G02B27/145—Beam splitting or combining systems operating by reflection only having sequential partially reflecting surfaces
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
- G02B27/149—Beam splitting or combining systems operating by reflection only using crossed beamsplitting surfaces, e.g. cross-dichroic cubes or X-cubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000265451 | 2000-09-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG127672A1 true SG127672A1 (en) | 2006-12-29 |
Family
ID=18752713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200105373A SG127672A1 (en) | 2000-09-01 | 2001-09-01 | Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US6650480B2 (zh) |
KR (1) | KR100863919B1 (zh) |
CN (2) | CN1697144B (zh) |
MY (1) | MY138983A (zh) |
SG (1) | SG127672A1 (zh) |
TW (1) | TW523791B (zh) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09234579A (ja) * | 1996-02-28 | 1997-09-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
TW487959B (en) * | 1999-08-13 | 2002-05-21 | Semiconductor Energy Lab | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
US6970644B2 (en) | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US7015422B2 (en) | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US6955956B2 (en) * | 2000-12-26 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
MY127193A (en) * | 2000-12-26 | 2006-11-30 | Semiconductor Energy Lab | Laser irradiation apparatus and method of laser irradiation |
JP3980465B2 (ja) * | 2001-11-09 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI289896B (en) * | 2001-11-09 | 2007-11-11 | Semiconductor Energy Lab | Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device |
JP3949564B2 (ja) * | 2001-11-30 | 2007-07-25 | 株式会社半導体エネルギー研究所 | レーザ照射装置及び半導体装置の作製方法 |
CN1263255C (zh) * | 2002-04-03 | 2006-07-05 | 三星电子株式会社 | 以太网无源光网络及点到点模拟方法 |
US6977775B2 (en) * | 2002-05-17 | 2005-12-20 | Sharp Kabushiki Kaisha | Method and apparatus for crystallizing semiconductor with laser beams |
TW200417270A (en) * | 2002-06-27 | 2004-09-01 | Tokyo Electron Ltd | Semiconductor processing device |
US7081704B2 (en) * | 2002-08-09 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7259082B2 (en) * | 2002-10-03 | 2007-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP4282985B2 (ja) * | 2002-12-27 | 2009-06-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP4662411B2 (ja) * | 2003-03-14 | 2011-03-30 | 日立ビアメカニクス株式会社 | レーザ加工装置 |
US20050104072A1 (en) | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
US7450307B2 (en) * | 2003-09-09 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
US7109087B2 (en) * | 2003-10-03 | 2006-09-19 | Applied Materials, Inc. | Absorber layer for DSA processing |
EP1676300B1 (en) * | 2003-10-03 | 2014-10-01 | Applied Materials, Inc. | Method for annealing a substrate comprising an absorber layer |
JP4741822B2 (ja) * | 2004-09-02 | 2011-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
WO2006066706A2 (en) * | 2004-12-22 | 2006-06-29 | Carl Zeiss Laser Optics Gmbh | Optical illumination system for creating a line beam |
US7612832B2 (en) * | 2005-03-29 | 2009-11-03 | Microsoft Corporation | Method and system for video clip compression |
JP4498309B2 (ja) * | 2005-05-18 | 2010-07-07 | キヤノン株式会社 | レーザー干渉による加工方法及び該加工方法で加工された回折格子、反射防止構造 |
JP2007110064A (ja) | 2005-09-14 | 2007-04-26 | Ishikawajima Harima Heavy Ind Co Ltd | レーザアニール方法及び装置 |
US7615722B2 (en) * | 2006-07-17 | 2009-11-10 | Coherent, Inc. | Amorphous silicon crystallization using combined beams from optically pumped semiconductor lasers |
JP4478670B2 (ja) * | 2006-09-08 | 2010-06-09 | ソニー株式会社 | 1次元照明装置及び画像生成装置 |
US8279514B2 (en) * | 2007-01-24 | 2012-10-02 | Osram Ag | Optoelectronic device |
US7851343B2 (en) * | 2007-06-14 | 2010-12-14 | Cree, Inc. | Methods of forming ohmic layers through ablation capping layers |
JP5224218B2 (ja) * | 2007-07-23 | 2013-07-03 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の光学システム |
DE102007047467A1 (de) * | 2007-09-28 | 2009-04-02 | Carl Zeiss Microimaging Gmbh | Anordnung zur optischen Erfassung von in einer Probe angeregter und/oder rückgestreuter Lichtstrahlung |
FR2922325B1 (fr) * | 2007-10-12 | 2010-06-11 | Ecole Polytech | Homogeneiseur a lame de phase |
DE102007049512B4 (de) * | 2007-10-15 | 2010-09-30 | Ovd Kinegram Ag | Mehrschichtkörper sowie Verfahren zur Herstellung eines Mehrschichtkörpers |
JP5467730B2 (ja) * | 2008-03-24 | 2014-04-09 | 株式会社半導体エネルギー研究所 | レーザ照射装置 |
US7700032B1 (en) * | 2008-07-14 | 2010-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Formation of microspheres through laser irradiation of a surface |
DE102009037141B4 (de) * | 2009-07-31 | 2013-01-03 | Carl Zeiss Laser Optics Gmbh | Optisches System zum Erzeugen eines Lichtstrahls zur Behandlung eines Substrats |
US9069183B2 (en) | 2011-09-28 | 2015-06-30 | Applied Materials, Inc. | Apparatus and method for speckle reduction in laser processing equipment |
KR101865222B1 (ko) * | 2011-10-18 | 2018-06-08 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 및 레이저 결정화 방법 |
CN103839790B (zh) * | 2012-11-23 | 2016-09-28 | 中芯国际集成电路制造(上海)有限公司 | 激光退火装置及退火方法 |
CN104347368A (zh) * | 2013-07-26 | 2015-02-11 | 上海微电子装备有限公司 | 多激光的激光退火装置及方法 |
CN104576336A (zh) * | 2013-10-17 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 激光退火设备及利用该设备改善硅片表面粗糙度的方法 |
CN104808343B (zh) * | 2014-01-29 | 2018-03-30 | 上海微电子装备(集团)股份有限公司 | 一种激光退火匀光装置 |
JP6383166B2 (ja) * | 2014-03-28 | 2018-08-29 | 株式会社Screenホールディングス | 光照射装置および描画装置 |
US10247952B2 (en) * | 2015-03-04 | 2019-04-02 | Coherent Lasersystems Gmbh & Co. Kg | Polarization-controlled laser line-projector |
KR101700392B1 (ko) | 2015-05-26 | 2017-02-14 | 삼성디스플레이 주식회사 | 레이저빔 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법 |
US10133187B2 (en) | 2015-05-29 | 2018-11-20 | SCREEN Holdings Co., Ltd. | Light irradiation apparatus and drawing apparatus |
KR102427155B1 (ko) | 2015-08-25 | 2022-07-29 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
KR102582652B1 (ko) * | 2016-12-21 | 2023-09-25 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
US11318558B2 (en) | 2018-05-15 | 2022-05-03 | The Chancellor, Masters And Scholars Of The University Of Cambridge | Fabrication of components using shaped energy beam profiles |
CN110049095A (zh) * | 2019-03-01 | 2019-07-23 | 湖北三江航天红峰控制有限公司 | 一种激光装备数据上工业云平台的方法 |
DE102019206976B3 (de) * | 2019-05-14 | 2020-11-12 | Trumpf Laser Gmbh | Optisches System zum Erzeugen zweier Laserfokuslinien sowie Verfahren zum gleichzeitigen Bearbeiten zweier einander gegenüberliegender, paralleler Werkstückseiten eines Werkstücks |
CN110091073B (zh) * | 2019-05-28 | 2020-11-20 | 中国科学院宁波材料技术与工程研究所 | 多光束耦合激光加工系统及方法 |
KR20210035368A (ko) * | 2019-09-23 | 2021-04-01 | 삼성디스플레이 주식회사 | 백라이트 장치 및 이를 포함하는 3차원 영상 표시 장치 |
CN111399238B (zh) * | 2020-04-27 | 2021-12-03 | 中国人民解放军国防科技大学 | 一种基于行星转的高能激光束近场强度匀化装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5959779A (en) * | 1997-03-04 | 1999-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
US6002523A (en) * | 1997-09-30 | 1999-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Laser illumination method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124913A (ja) | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
JPH06232069A (ja) | 1993-02-04 | 1994-08-19 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US6300176B1 (en) | 1994-07-22 | 2001-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
JP3917231B2 (ja) | 1996-02-06 | 2007-05-23 | 株式会社半導体エネルギー研究所 | レーザー照射装置およびレーザー照射方法 |
JPH09234579A (ja) | 1996-02-28 | 1997-09-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
JP3813269B2 (ja) | 1996-11-01 | 2006-08-23 | 株式会社半導体エネルギー研究所 | レーザー照射システム |
JP4056577B2 (ja) | 1997-02-28 | 2008-03-05 | 株式会社半導体エネルギー研究所 | レーザー照射方法 |
JPH10253916A (ja) | 1997-03-10 | 1998-09-25 | Semiconductor Energy Lab Co Ltd | レーザー光学装置 |
JP4059952B2 (ja) | 1997-03-27 | 2008-03-12 | 株式会社半導体エネルギー研究所 | レーザー光照射方法 |
JP4086932B2 (ja) | 1997-04-17 | 2008-05-14 | 株式会社半導体エネルギー研究所 | レーザー照射装置及びレーザー処理方法 |
JP3770999B2 (ja) | 1997-04-21 | 2006-04-26 | 株式会社半導体エネルギー研究所 | レーザー照射装置及びレーザー照射方法 |
US6246524B1 (en) | 1998-07-13 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
-
2001
- 2001-08-27 TW TW090121034A patent/TW523791B/zh not_active IP Right Cessation
- 2001-08-31 US US09/942,922 patent/US6650480B2/en not_active Expired - Lifetime
- 2001-09-01 SG SG200105373A patent/SG127672A1/en unknown
- 2001-09-01 KR KR1020010053713A patent/KR100863919B1/ko not_active IP Right Cessation
- 2001-09-01 CN CN2005100740079A patent/CN1697144B/zh not_active Expired - Fee Related
- 2001-09-01 CN CNB011357541A patent/CN1211687C/zh not_active Expired - Fee Related
- 2001-09-03 MY MYPI20014127A patent/MY138983A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5959779A (en) * | 1997-03-04 | 1999-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
US6002523A (en) * | 1997-09-30 | 1999-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Laser illumination method |
Non-Patent Citations (1)
Title |
---|
RESEARCH DESCLOSURE VOL. 323, NO. 105 * |
Also Published As
Publication number | Publication date |
---|---|
MY138983A (en) | 2009-08-28 |
CN1697144B (zh) | 2010-04-28 |
TW523791B (en) | 2003-03-11 |
CN1211687C (zh) | 2005-07-20 |
KR100863919B1 (ko) | 2008-10-17 |
US6650480B2 (en) | 2003-11-18 |
KR20020018630A (ko) | 2002-03-08 |
CN1340849A (zh) | 2002-03-20 |
US20020027716A1 (en) | 2002-03-07 |
CN1697144A (zh) | 2005-11-16 |
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