SG126906A1 - Special purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method - Google Patents
Special purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing methodInfo
- Publication number
- SG126906A1 SG126906A1 SG200602823A SG200602823A SG126906A1 SG 126906 A1 SG126906 A1 SG 126906A1 SG 200602823 A SG200602823 A SG 200602823A SG 200602823 A SG200602823 A SG 200602823A SG 126906 A1 SG126906 A1 SG 126906A1
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- layer mirror
- spectral purity
- radiation
- mirror
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000003595 spectral effect Effects 0.000 abstract 10
- 230000003292 diminished effect Effects 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/283—Interference filters designed for the ultraviolet
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/115,406 US7336416B2 (en) | 2005-04-27 | 2005-04-27 | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG126906A1 true SG126906A1 (en) | 2006-11-29 |
Family
ID=36764463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200602823A SG126906A1 (en) | 2005-04-27 | 2006-04-26 | Special purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (5) | US7336416B2 (ja) |
EP (3) | EP1717609B1 (ja) |
JP (2) | JP2006310793A (ja) |
KR (1) | KR100779699B1 (ja) |
CN (1) | CN100559217C (ja) |
AT (1) | ATE553403T1 (ja) |
SG (1) | SG126906A1 (ja) |
TW (1) | TWI302992B (ja) |
Families Citing this family (81)
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US7843632B2 (en) * | 2006-08-16 | 2010-11-30 | Cymer, Inc. | EUV optics |
DE10309084A1 (de) | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
JP4532991B2 (ja) * | 2004-05-26 | 2010-08-25 | キヤノン株式会社 | 投影光学系、露光装置及びデバイス製造方法 |
US7336416B2 (en) * | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
US7518797B2 (en) * | 2005-12-02 | 2009-04-14 | Carl Zeiss Smt Ag | Microlithographic exposure apparatus |
US7329876B2 (en) * | 2006-01-26 | 2008-02-12 | Xtreme Technologies Gmbh | Narrow-band transmission filter for EUV radiation |
US7736820B2 (en) * | 2006-05-05 | 2010-06-15 | Asml Netherlands B.V. | Anti-reflection coating for an EUV mask |
US7666555B2 (en) * | 2006-12-29 | 2010-02-23 | Intel Corporation | Pellicle, methods of fabrication and methods of use for extreme ultraviolet lithography |
EP2109134B1 (en) * | 2007-01-25 | 2017-03-01 | Nikon Corporation | Optical element, exposure apparatus employing the optical element, and device manufacturing method |
US7965378B2 (en) * | 2007-02-20 | 2011-06-21 | Asml Holding N.V | Optical system and method for illumination of reflective spatial light modulators in maskless lithography |
US20080266651A1 (en) * | 2007-04-24 | 2008-10-30 | Katsuhiko Murakami | Optical apparatus, multilayer-film reflective mirror, exposure apparatus, and device |
DE102007051671A1 (de) | 2007-10-26 | 2009-05-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
US20090250637A1 (en) * | 2008-04-02 | 2009-10-08 | Cymer, Inc. | System and methods for filtering out-of-band radiation in EUV exposure tools |
TWI420134B (zh) * | 2008-05-09 | 2013-12-21 | Hon Hai Prec Ind Co Ltd | 光學鏡片及其鍍膜方法 |
KR101625934B1 (ko) * | 2008-06-04 | 2016-05-31 | 에이에스엠엘 네델란즈 비.브이. | 다층 미러 및 리소그래피 장치 |
JP5067483B2 (ja) * | 2008-06-19 | 2012-11-07 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク |
NL2002968A1 (nl) * | 2008-06-30 | 2009-12-31 | Asml Netherlands Bv | Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby. |
JP4876149B2 (ja) | 2008-07-11 | 2012-02-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置における使用のためのスペクトル純度フィルタ |
JP5689059B2 (ja) * | 2008-08-14 | 2015-03-25 | エーエスエムエル ネザーランズ ビー.ブイ. | スペクトル純度フィルタ、放射源モジュール、リソグラフィ装置およびデバイス製造方法 |
NL2003299A (en) * | 2008-08-28 | 2010-03-11 | Asml Netherlands Bv | Spectral purity filter and lithographic apparatus. |
US20110157573A1 (en) * | 2008-08-29 | 2011-06-30 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus including such a spectral purity filter and device manufacturing method |
JP5533656B2 (ja) * | 2008-09-18 | 2014-06-25 | 株式会社ニコン | 結像光学系、露光装置及び電子デバイスの製造方法 |
IT1395244B1 (it) * | 2008-12-17 | 2012-09-05 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante |
WO2010091907A1 (en) | 2009-02-13 | 2010-08-19 | Asml Netherlands B.V. | Multilayer mirror and lithographic apparatus |
DE102009032779A1 (de) * | 2009-07-10 | 2011-01-13 | Carl Zeiss Smt Ag | Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
US8519325B1 (en) * | 2009-08-24 | 2013-08-27 | Zhenyu Lu | Optical radiation concentrator |
DE102009045170A1 (de) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und Verfahren zum Betrieb einer EUV-Lithographievorrichtung |
DE102009044462A1 (de) | 2009-11-06 | 2011-01-05 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage |
CN102687071B (zh) * | 2009-12-09 | 2013-12-11 | 旭硝子株式会社 | 带反射层的euv光刻用衬底、euv光刻用反射型掩模坯料、euv光刻用反射型掩模、和该带反射层的衬底的制造方法 |
SG183528A1 (en) * | 2010-03-24 | 2012-10-30 | Asml Netherlands Bv | Lithographic apparatus and spectral purity filter |
EP2518563A1 (en) | 2010-06-25 | 2012-10-31 | ASML Netherlands BV | Lithographic apparatus and method |
DE102010036955A1 (de) * | 2010-08-12 | 2012-02-16 | Asml Netherlands B.V. | Reflektives optisches Element und optisches System für die EUV-Lithographie |
EP2434345B1 (en) * | 2010-09-27 | 2013-07-03 | Imec | Method and system for evaluating euv mask flatness |
DE102010062597A1 (de) * | 2010-12-08 | 2012-06-14 | Carl Zeiss Smt Gmbh | Reflektives optisches Abbildungssystem |
CN102621815B (zh) * | 2011-01-26 | 2016-12-21 | Asml荷兰有限公司 | 用于光刻设备的反射光学部件及器件制造方法 |
US8310679B2 (en) * | 2011-01-31 | 2012-11-13 | Indian Institute Of Science | Apparatus and methods for sensing or imaging using stacked thin films |
US9594306B2 (en) | 2011-03-04 | 2017-03-14 | Asml Netherlands B.V. | Lithographic apparatus, spectral purity filter and device manufacturing method |
KR101793316B1 (ko) | 2011-03-16 | 2017-11-02 | 케이엘에이-텐코 코포레이션 | 박막 스펙트럼 순도 필터 코팅을 갖는 영상 센서를 사용하는 euv 화학선 레티클 검사 시스템 |
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DE102011083461A1 (de) | 2011-09-27 | 2013-03-28 | Carl Zeiss Smt Gmbh | Verfahren zum Erzeugen einer Deckschicht aus Siliziumoxid an einem EUV-Spiegel |
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US9927094B2 (en) * | 2012-01-17 | 2018-03-27 | Kla-Tencor Corporation | Plasma cell for providing VUV filtering in a laser-sustained plasma light source |
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CN108680981B (zh) * | 2018-05-16 | 2020-12-01 | 德州尧鼎光电科技有限公司 | 一种深紫外窄带滤光片制备方法 |
CN109254338A (zh) * | 2018-10-26 | 2019-01-22 | 中国科学院长春光学精密机械与物理研究所 | 一种19.5nm多层膜反射镜 |
KR102263833B1 (ko) * | 2019-09-09 | 2021-06-11 | 주식회사 와이즈가드 | 기능성 산화물층을 포함하는 광기능성 패턴 구조물 |
TW202119136A (zh) * | 2019-10-18 | 2021-05-16 | 美商應用材料股份有限公司 | 多層反射器及其製造和圖案化之方法 |
US11448970B2 (en) * | 2020-09-09 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography system and methods |
CN112820439B (zh) * | 2020-12-31 | 2023-01-06 | 苏州闻道电子科技有限公司 | 一种用于x射线与软x射线波段的滤片及其制备方法 |
CN113776662B (zh) * | 2021-09-02 | 2022-12-16 | 同济大学 | 超高真空环境远紫外-极紫外光斩波周期调制分光装置 |
CN115132084B (zh) * | 2022-07-01 | 2023-09-26 | 武汉华星光电半导体显示技术有限公司 | 显示装置 |
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NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
JPH11311704A (ja) * | 1998-02-26 | 1999-11-09 | Nikon Corp | 紫外光用ミラー |
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US6229652B1 (en) * | 1998-11-25 | 2001-05-08 | The Regents Of The University Of California | High reflectance and low stress Mo2C/Be multilayers |
US6228512B1 (en) * | 1999-05-26 | 2001-05-08 | The Regents Of The University Of California | MoRu/Be multilayers for extreme ultraviolet applications |
TW561279B (en) * | 1999-07-02 | 2003-11-11 | Asml Netherlands Bv | Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation |
FR2802311B1 (fr) * | 1999-12-08 | 2002-01-18 | Commissariat Energie Atomique | Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine |
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US6576912B2 (en) | 2001-01-03 | 2003-06-10 | Hugo M. Visser | Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window |
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US6825988B2 (en) | 2002-09-04 | 2004-11-30 | Intel Corporation | Etched silicon diffraction gratings for use as EUV spectral purity filters |
DE10258709A1 (de) | 2002-12-12 | 2004-07-01 | Carl Zeiss Smt Ag | Schutzsystem für reflektive optische Elemente, reflektives optisches Element und Verfahren zu deren Herstellung |
EP1629268B1 (de) | 2003-05-22 | 2013-05-15 | Philips Intellectual Property & Standards GmbH | Verfahren und vorrichtung zum reinigen mindestens einer optischen komponente |
US7193228B2 (en) * | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
US7336416B2 (en) * | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
NO20100377A1 (no) * | 2010-03-16 | 2011-09-19 | Polewall As | Framgangsmåte for å rette en optisk mottaker mot en lyskilde og et apparat for utøvelse av framgangsmåten |
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2006
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US7706057B2 (en) | 2010-04-27 |
KR100779699B1 (ko) | 2007-11-26 |
TWI302992B (en) | 2008-11-11 |
US20060245058A1 (en) | 2006-11-02 |
US7336416B2 (en) | 2008-02-26 |
EP1717609A1 (en) | 2006-11-02 |
ATE553403T1 (de) | 2012-04-15 |
EP2261699A1 (en) | 2010-12-15 |
EP2261698B1 (en) | 2013-03-20 |
US20080316595A1 (en) | 2008-12-25 |
EP1717609B1 (en) | 2012-04-11 |
US20100149512A1 (en) | 2010-06-17 |
KR20060113519A (ko) | 2006-11-02 |
CN1854771A (zh) | 2006-11-01 |
TW200643481A (en) | 2006-12-16 |
JP2006310793A (ja) | 2006-11-09 |
CN100559217C (zh) | 2009-11-11 |
US8139200B2 (en) | 2012-03-20 |
US7463413B2 (en) | 2008-12-09 |
EP2261698A1 (en) | 2010-12-15 |
US20110134410A1 (en) | 2011-06-09 |
US20060245057A1 (en) | 2006-11-02 |
JP2009294659A (ja) | 2009-12-17 |
JP5406602B2 (ja) | 2014-02-05 |
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