IT1395244B1 - Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante - Google Patents

Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante

Info

Publication number
IT1395244B1
IT1395244B1 ITTO2008A000941A ITTO20080941A IT1395244B1 IT 1395244 B1 IT1395244 B1 IT 1395244B1 IT TO2008A000941 A ITTO2008A000941 A IT TO2008A000941A IT TO20080941 A ITTO20080941 A IT TO20080941A IT 1395244 B1 IT1395244 B1 IT 1395244B1
Authority
IT
Italy
Prior art keywords
cemonity
manufacturing
radiation emitter
cable optical
cable
Prior art date
Application number
ITTO2008A000941A
Other languages
English (en)
Inventor
Maria Eloisa Castagna
Anna Muscara
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITTO2008A000941A priority Critical patent/IT1395244B1/it
Priority to US12/605,224 priority patent/US20100151603A1/en
Publication of ITTO20080941A1 publication Critical patent/ITTO20080941A1/it
Application granted granted Critical
Publication of IT1395244B1 publication Critical patent/IT1395244B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
  • Semiconductor Lasers (AREA)
ITTO2008A000941A 2008-12-17 2008-12-17 Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante IT1395244B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITTO2008A000941A IT1395244B1 (it) 2008-12-17 2008-12-17 Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante
US12/605,224 US20100151603A1 (en) 2008-12-17 2009-10-23 Method of manufacturing a resonant cavity optical radiation emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2008A000941A IT1395244B1 (it) 2008-12-17 2008-12-17 Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante

Publications (2)

Publication Number Publication Date
ITTO20080941A1 ITTO20080941A1 (it) 2010-06-18
IT1395244B1 true IT1395244B1 (it) 2012-09-05

Family

ID=40872381

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2008A000941A IT1395244B1 (it) 2008-12-17 2008-12-17 Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante

Country Status (2)

Country Link
US (1) US20100151603A1 (it)
IT (1) IT1395244B1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1734591B1 (en) * 2005-06-16 2013-05-22 STMicroelectronics S.r.l. Optical radiation emitting device and method for manufacturing this device
IT1396818B1 (it) * 2009-11-19 2012-12-14 St Microelectronics Srl Dispositivo elettroluminescente pompabile elettricamente ad emissione laterale, integrato in una guida d'onda passiva per generare luce o amplificare un segnale e procedimento di fabbricazione.

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726462A (en) * 1996-02-07 1998-03-10 Sandia Corporation Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
US5877509A (en) * 1997-11-14 1999-03-02 Stanford University Quantum well exciton-polariton light emitting diode
US6556607B1 (en) * 2000-06-23 2003-04-29 Picolight, Incorporated Temperature compensated lasers
US6882673B1 (en) * 2001-01-15 2005-04-19 Optical Communication Products, Inc. Mirror structure for reducing the effect of feedback on a VCSEL
US6898215B2 (en) * 2001-04-11 2005-05-24 Optical Communication Products, Inc. Long wavelength vertical cavity surface emitting laser
WO2004006393A2 (en) * 2002-07-06 2004-01-15 Optical Communication Products, Inc. Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength vcsel
US6936486B2 (en) * 2002-11-19 2005-08-30 Jdsu Uniphase Corporation Low voltage multi-junction vertical cavity surface emitting laser
US7336416B2 (en) * 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
EP1734591B1 (en) * 2005-06-16 2013-05-22 STMicroelectronics S.r.l. Optical radiation emitting device and method for manufacturing this device
US7339969B2 (en) * 2006-05-05 2008-03-04 Optical Communication Products, Inc. Refined mirror structure for reducing the effect of feedback on a VCSEL
ITTO20080781A1 (it) * 2008-10-23 2010-04-24 St Microelectronics Srl Dispositivo emettitore di radiazione ottica a cavita' risonante e processo di fabbricazione del dispositivo

Also Published As

Publication number Publication date
ITTO20080941A1 (it) 2010-06-18
US20100151603A1 (en) 2010-06-17

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