SG120284A1 - A method program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography - Google Patents

A method program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography

Info

Publication number
SG120284A1
SG120284A1 SG200505331A SG200505331A SG120284A1 SG 120284 A1 SG120284 A1 SG 120284A1 SG 200505331 A SG200505331 A SG 200505331A SG 200505331 A SG200505331 A SG 200505331A SG 120284 A1 SG120284 A1 SG 120284A1
Authority
SG
Singapore
Prior art keywords
determining
focus
focus setting
quarter
program product
Prior art date
Application number
SG200505331A
Other languages
English (en)
Inventor
Van Den Broeke Douglas
Fung Chen Jang
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG120284A1 publication Critical patent/SG120284A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200505331A 2004-08-24 2005-08-23 A method program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography SG120284A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60356004P 2004-08-24 2004-08-24

Publications (1)

Publication Number Publication Date
SG120284A1 true SG120284A1 (en) 2006-03-28

Family

ID=35431328

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200505331A SG120284A1 (en) 2004-08-24 2005-08-23 A method program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography

Country Status (7)

Country Link
US (2) US7620930B2 (de)
EP (1) EP1630601A3 (de)
JP (1) JP4383400B2 (de)
KR (1) KR100860328B1 (de)
CN (1) CN100543588C (de)
SG (1) SG120284A1 (de)
TW (1) TWI370955B (de)

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Also Published As

Publication number Publication date
US7620930B2 (en) 2009-11-17
JP4383400B2 (ja) 2009-12-16
CN100543588C (zh) 2009-09-23
CN1800987A (zh) 2006-07-12
US8495529B2 (en) 2013-07-23
US20060075377A1 (en) 2006-04-06
TW200619863A (en) 2006-06-16
TWI370955B (en) 2012-08-21
JP2006065338A (ja) 2006-03-09
KR20060050603A (ko) 2006-05-19
US20100047699A1 (en) 2010-02-25
EP1630601A3 (de) 2008-07-02
KR100860328B1 (ko) 2008-09-25
EP1630601A2 (de) 2006-03-01

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