SG118433A1 - Apparatus and method for plating semiconductor wafers - Google Patents

Apparatus and method for plating semiconductor wafers

Info

Publication number
SG118433A1
SG118433A1 SG200504761A SG200504761A SG118433A1 SG 118433 A1 SG118433 A1 SG 118433A1 SG 200504761 A SG200504761 A SG 200504761A SG 200504761 A SG200504761 A SG 200504761A SG 118433 A1 SG118433 A1 SG 118433A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafers
plating semiconductor
plating
wafers
semiconductor
Prior art date
Application number
SG200504761A
Other languages
English (en)
Inventor
Yezdi N Dordi
Fred C Redeker
John M Boyd
Maraschin Robert
Woods Carl
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG118433A1 publication Critical patent/SG118433A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/14—Electrodes, e.g. composition, counter electrode for pad-plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes
    • C25D5/06—Brush or pad plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
SG200504761A 2004-06-30 2005-06-28 Apparatus and method for plating semiconductor wafers SG118433A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/882,712 US7645364B2 (en) 2004-06-30 2004-06-30 Apparatus and method for plating semiconductor wafers

Publications (1)

Publication Number Publication Date
SG118433A1 true SG118433A1 (en) 2006-01-27

Family

ID=35385608

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200504761A SG118433A1 (en) 2004-06-30 2005-06-28 Apparatus and method for plating semiconductor wafers

Country Status (8)

Country Link
US (2) US7645364B2 (ja)
EP (1) EP1619275B1 (ja)
JP (2) JP5042470B2 (ja)
KR (2) KR101246964B1 (ja)
CN (1) CN1728347B (ja)
MY (2) MY146073A (ja)
SG (1) SG118433A1 (ja)
TW (1) TWI292592B (ja)

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US7811423B2 (en) * 2006-10-06 2010-10-12 Lam Research Corporation Proximity processing using controlled batch volume with an integrated proximity head
US8317450B2 (en) * 2008-10-30 2012-11-27 Lam Research Corporation Tactile wafer lifter and methods for operating the same
AU2011238427B2 (en) * 2010-04-07 2015-05-14 Mipac Pty Ltd Monitoring device
JP5539511B2 (ja) * 2010-06-15 2014-07-02 東京エレクトロン株式会社 半導体装置の製造方法
TWI410532B (zh) * 2010-09-01 2013-10-01 Grand Plastic Technology Co Ltd 晶圓填孔垂直式電極電鍍設備
US20130306465A1 (en) * 2012-05-17 2013-11-21 Applied Materials, Inc. Seal rings in electrochemical processors
US20140367264A1 (en) * 2013-06-18 2014-12-18 Applied Materials, Inc. Automatic in-situ control of an electro-plating processor
US9809898B2 (en) * 2013-06-26 2017-11-07 Lam Research Corporation Electroplating and post-electrofill systems with integrated process edge imaging and metrology systems
US9822460B2 (en) 2014-01-21 2017-11-21 Lam Research Corporation Methods and apparatuses for electroplating and seed layer detection
JP6065886B2 (ja) * 2014-07-22 2017-01-25 トヨタ自動車株式会社 金属皮膜の成膜方法
CN105628755B (zh) * 2015-12-30 2018-05-08 上海新阳半导体材料股份有限公司 一种双阳极检测镀液均镀性的方法
US9735035B1 (en) 2016-01-29 2017-08-15 Lam Research Corporation Methods and apparatuses for estimating on-wafer oxide layer reduction effectiveness via color sensing
KR102639533B1 (ko) * 2018-12-31 2024-02-21 엘지디스플레이 주식회사 전기도금장치 및 수평도금장치
KR102636830B1 (ko) * 2018-12-31 2024-02-14 엘지디스플레이 주식회사 전기 도금 장치 및 이를 이용한 전기 도금 방법
EP3910095B1 (en) * 2020-05-11 2022-03-16 Semsysco GmbH Distribution system for a process fluid for chemical and/or electrolytic surface treatment of a rotatable substrate
CN112246747B (zh) * 2020-09-30 2021-09-17 青岛金汇源电子有限公司 一种连续式半导体晶圆蚀刻设备
EP4056736A1 (en) * 2021-03-09 2022-09-14 Semsysco GmbH Distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate
US11913132B2 (en) * 2022-05-18 2024-02-27 Advanced Semiconductor Engineering, Inc. Method for manufacturing a package
CN115142112A (zh) * 2022-09-01 2022-10-04 徐州千帆标识系统工程有限公司 一种金属标牌多角度高效电镀装置及方法

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US4287044A (en) * 1980-03-31 1981-09-01 Silver Systems, Ltd. Silver recovery apparatus
US6398975B1 (en) * 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
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US6402923B1 (en) * 2000-03-27 2002-06-11 Novellus Systems Inc Method and apparatus for uniform electroplating of integrated circuits using a variable field shaping element
JP2000232078A (ja) * 1999-02-10 2000-08-22 Toshiba Corp メッキ方法及びメッキ装置
US6136163A (en) * 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6582578B1 (en) * 1999-04-08 2003-06-24 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
US6433541B1 (en) * 1999-12-23 2002-08-13 Kla-Tencor Corporation In-situ metalization monitoring using eddy current measurements during the process for removing the film
US6258463B1 (en) 2000-03-02 2001-07-10 Praxair S.T. Technology, Inc. Anodized cryogenically treated aluminum
US6495005B1 (en) * 2000-05-01 2002-12-17 International Business Machines Corporation Electroplating apparatus
JP2001316876A (ja) 2000-05-08 2001-11-16 Tokyo Electron Ltd 測定装置およびメッキ装置
EP1470268A2 (en) * 2000-10-03 2004-10-27 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
JP3664669B2 (ja) * 2001-06-27 2005-06-29 株式会社荏原製作所 電解めっき装置
JP3490993B2 (ja) * 2001-10-29 2004-01-26 アプライド マテリアルズ インコーポレイテッド めっき方法
JP4052868B2 (ja) * 2002-04-26 2008-02-27 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US7128803B2 (en) 2002-06-28 2006-10-31 Lam Research Corporation Integration of sensor based metrology into semiconductor processing tools
US7223323B2 (en) * 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US6988327B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7153400B2 (en) * 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7240679B2 (en) 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold

Also Published As

Publication number Publication date
MY146073A (en) 2012-06-29
US7645364B2 (en) 2010-01-12
KR101287760B1 (ko) 2013-07-19
JP2012082526A (ja) 2012-04-26
EP1619275A3 (en) 2008-12-24
EP1619275B1 (en) 2012-08-08
TWI292592B (en) 2008-01-11
JP2006016692A (ja) 2006-01-19
KR20060049728A (ko) 2006-05-19
KR20120105386A (ko) 2012-09-25
TW200616073A (en) 2006-05-16
KR101246964B1 (ko) 2013-03-25
US20090321250A1 (en) 2009-12-31
JP5042470B2 (ja) 2012-10-03
EP1619275A2 (en) 2006-01-25
US7862693B2 (en) 2011-01-04
MY145206A (en) 2012-01-13
CN1728347B (zh) 2011-05-11
US20080271992A1 (en) 2008-11-06
CN1728347A (zh) 2006-02-01
JP5780935B2 (ja) 2015-09-16

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