SG117454A1 - Structure of p-electrode at the light-emerging side of light-emitting diode - Google Patents

Structure of p-electrode at the light-emerging side of light-emitting diode

Info

Publication number
SG117454A1
SG117454A1 SG200304218A SG200304218A SG117454A1 SG 117454 A1 SG117454 A1 SG 117454A1 SG 200304218 A SG200304218 A SG 200304218A SG 200304218 A SG200304218 A SG 200304218A SG 117454 A1 SG117454 A1 SG 117454A1
Authority
SG
Singapore
Prior art keywords
light
electrode
emitting diode
emerging side
emerging
Prior art date
Application number
SG200304218A
Other languages
English (en)
Inventor
Katayama Koji
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of SG117454A1 publication Critical patent/SG117454A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
SG200304218A 2002-07-17 2003-07-16 Structure of p-electrode at the light-emerging side of light-emitting diode SG117454A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002208105A JP2004055646A (ja) 2002-07-17 2002-07-17 発光ダイオード素子のｐ側電極構造

Publications (1)

Publication Number Publication Date
SG117454A1 true SG117454A1 (en) 2005-12-29

Family

ID=29774630

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200304218A SG117454A1 (en) 2002-07-17 2003-07-16 Structure of p-electrode at the light-emerging side of light-emitting diode

Country Status (8)

Country Link
US (1) US6903374B2 (fr)
EP (1) EP1383177A1 (fr)
JP (1) JP2004055646A (fr)
KR (1) KR20040008092A (fr)
CN (1) CN1472827A (fr)
CA (1) CA2432636A1 (fr)
SG (1) SG117454A1 (fr)
TW (1) TW200402898A (fr)

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Also Published As

Publication number Publication date
CN1472827A (zh) 2004-02-04
US20040012013A1 (en) 2004-01-22
KR20040008092A (ko) 2004-01-28
TW200402898A (en) 2004-02-16
US6903374B2 (en) 2005-06-07
JP2004055646A (ja) 2004-02-19
CA2432636A1 (fr) 2004-01-17
EP1383177A1 (fr) 2004-01-21

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