SG115549A1 - Epitaxial substrate for compound semiconductor light emitting device, method for producing the same and light emitting device - Google Patents

Epitaxial substrate for compound semiconductor light emitting device, method for producing the same and light emitting device

Info

Publication number
SG115549A1
SG115549A1 SG200303819A SG200303819A SG115549A1 SG 115549 A1 SG115549 A1 SG 115549A1 SG 200303819 A SG200303819 A SG 200303819A SG 200303819 A SG200303819 A SG 200303819A SG 115549 A1 SG115549 A1 SG 115549A1
Authority
SG
Singapore
Prior art keywords
light emitting
emitting device
producing
same
compound semiconductor
Prior art date
Application number
SG200303819A
Other languages
English (en)
Inventor
Yamanaka Sadanori
Tsuchida Yoshihiko
Ono Yoshinobu
Iyechika Yasushi
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG115549A1 publication Critical patent/SG115549A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
SG200303819A 2002-07-08 2003-06-28 Epitaxial substrate for compound semiconductor light emitting device, method for producing the same and light emitting device SG115549A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002198955 2002-07-08

Publications (1)

Publication Number Publication Date
SG115549A1 true SG115549A1 (en) 2005-10-28

Family

ID=27751389

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200303819A SG115549A1 (en) 2002-07-08 2003-06-28 Epitaxial substrate for compound semiconductor light emitting device, method for producing the same and light emitting device

Country Status (7)

Country Link
US (2) US7098484B2 (ko)
KR (1) KR101001527B1 (ko)
CN (1) CN1484324B (ko)
DE (1) DE10330629A1 (ko)
GB (1) GB2393038B (ko)
SG (1) SG115549A1 (ko)
TW (1) TWI310963B (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100425341B1 (ko) * 2000-02-08 2004-03-31 삼성전기주식회사 질화물 반도체 발광 소자
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
KR100576849B1 (ko) * 2003-09-19 2006-05-10 삼성전기주식회사 발광소자 및 그 제조방법
GB2407702A (en) * 2003-10-28 2005-05-04 Sharp Kk A semiconductor light-emitting device
TWI236160B (en) * 2003-11-25 2005-07-11 Super Nova Optoelectronics Cor GaN light emitted diode with high luminescent efficiency and the manufacture method
KR20050082251A (ko) * 2004-02-18 2005-08-23 삼성전자주식회사 반도체 레이저 디바이스
CN100341162C (zh) * 2004-03-19 2007-10-03 元砷光电科技股份有限公司 发光二极管结构
TWI266440B (en) * 2005-10-20 2006-11-11 Formosa Epitaxy Inc Light emitting diode chip
JP2007214378A (ja) * 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物系半導体素子
JP5665256B2 (ja) * 2006-12-20 2015-02-04 キヤノン株式会社 発光表示デバイス
KR101316423B1 (ko) * 2007-08-09 2013-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWI415295B (zh) 2008-06-24 2013-11-11 Advanced Optoelectronic Tech 半導體元件的製造方法及其結構
CN101621094B (zh) * 2008-06-30 2012-10-17 展晶科技(深圳)有限公司 半导体元件的制造方法及其结构
KR20120003433A (ko) * 2009-04-07 2012-01-10 스미또모 가가꾸 가부시키가이샤 반도체 기판의 제조 방법 및 반도체 기판
EP2472607B1 (en) * 2009-08-24 2017-12-27 Panasonic Intellectual Property Management Co., Ltd. Gallium nitride compound semiconductor light-emitting device
US20130313516A1 (en) * 2012-05-04 2013-11-28 Soraa, Inc. Led lamps with improved quality of light
US8318515B2 (en) * 2009-12-08 2012-11-27 Corning Incorporated Growth methodology for light emitting semiconductor devices
DE102009060747A1 (de) 2009-12-30 2011-07-07 OSRAM Opto Semiconductors GmbH, 93055 Halbleiterchip
JP5175918B2 (ja) 2010-12-01 2013-04-03 株式会社東芝 半導体発光素子
CN102737991B (zh) * 2012-06-01 2014-09-24 中国电子科技集团公司第五十五研究所 一种制造复合背势垒氮化镓异质结场效应管的方法
JP6223075B2 (ja) 2012-10-09 2017-11-01 キヤノン株式会社 発光素子の製造方法及び発光素子
CN103151435B (zh) * 2013-01-30 2015-05-06 东南大学 一种具有复合势垒的氮化镓基发光二极管
JP2015188048A (ja) * 2014-03-10 2015-10-29 株式会社東芝 窒化物半導体積層体および半導体発光素子
CN105514237A (zh) * 2016-01-13 2016-04-20 扬州中科半导体照明有限公司 一种GaN基LED外延结构及其生产方法
CN105742430A (zh) * 2016-03-07 2016-07-06 太原理工大学 一种led外延结构及其制备方法
JP6824829B2 (ja) * 2017-06-15 2021-02-03 株式会社サイオクス 窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1101841A2 (en) * 1999-11-17 2001-05-23 Ngk Insulators, Ltd. Substrate for epitaxy of III-V compounds and a method for producing the same
US6326638B1 (en) * 1995-01-19 2001-12-04 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
US6329667B1 (en) * 1999-02-09 2001-12-11 Pioneer Corporation Nitride semiconductor light emitting device and manufacturing method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785254B2 (ja) 1993-06-28 1998-08-13 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3250438B2 (ja) 1995-03-29 2002-01-28 日亜化学工業株式会社 窒化物半導体発光素子
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
JP3957359B2 (ja) * 1997-05-21 2007-08-15 シャープ株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP4245691B2 (ja) 1998-08-04 2009-03-25 シャープ株式会社 窒化ガリウム系半導体レーザ素子及び光ピックアップ装置
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP2001094212A (ja) * 1999-09-24 2001-04-06 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP4556288B2 (ja) 2000-05-18 2010-10-06 ソニー株式会社 半導体素子
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
CN1505843B (zh) * 2001-06-15 2010-05-05 克里公司 在SiC衬底上形成的GaN基LED
JP2007201195A (ja) * 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd 窒化物半導体発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6326638B1 (en) * 1995-01-19 2001-12-04 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
US6329667B1 (en) * 1999-02-09 2001-12-11 Pioneer Corporation Nitride semiconductor light emitting device and manufacturing method thereof
EP1101841A2 (en) * 1999-11-17 2001-05-23 Ngk Insulators, Ltd. Substrate for epitaxy of III-V compounds and a method for producing the same

Also Published As

Publication number Publication date
DE10330629A1 (de) 2004-01-22
GB2393038B (en) 2006-08-16
US7098484B2 (en) 2006-08-29
KR20040005630A (ko) 2004-01-16
KR101001527B1 (ko) 2010-12-16
US7459326B2 (en) 2008-12-02
TWI310963B (en) 2009-06-11
US20060267035A1 (en) 2006-11-30
TW200409202A (en) 2004-06-01
GB2393038A (en) 2004-03-17
GB0315952D0 (en) 2003-08-13
US20040012014A1 (en) 2004-01-22
CN1484324B (zh) 2011-01-19
CN1484324A (zh) 2004-03-24

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