SG115526A1 - Thin-film semiconductor epitaxial substrate and process for production thereof - Google Patents

Thin-film semiconductor epitaxial substrate and process for production thereof

Info

Publication number
SG115526A1
SG115526A1 SG200301335A SG200301335A SG115526A1 SG 115526 A1 SG115526 A1 SG 115526A1 SG 200301335 A SG200301335 A SG 200301335A SG 200301335 A SG200301335 A SG 200301335A SG 115526 A1 SG115526 A1 SG 115526A1
Authority
SG
Singapore
Prior art keywords
thin
production
film semiconductor
epitaxial substrate
semiconductor epitaxial
Prior art date
Application number
SG200301335A
Other languages
English (en)
Inventor
Hiroyama Yuichi
Takada Tomoyuki
Ichikawa Osamu
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG115526A1 publication Critical patent/SG115526A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
SG200301335A 2002-04-19 2003-03-14 Thin-film semiconductor epitaxial substrate and process for production thereof SG115526A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002118444A JP3936618B2 (ja) 2002-04-19 2002-04-19 薄膜半導体エピタキシャル基板及びその製造方法

Publications (1)

Publication Number Publication Date
SG115526A1 true SG115526A1 (en) 2005-10-28

Family

ID=29207863

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200301335A SG115526A1 (en) 2002-04-19 2003-03-14 Thin-film semiconductor epitaxial substrate and process for production thereof

Country Status (6)

Country Link
US (1) US6914274B2 (zh)
JP (1) JP3936618B2 (zh)
KR (1) KR20030083599A (zh)
CN (1) CN1452224A (zh)
SG (1) SG115526A1 (zh)
TW (1) TW200401342A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7397062B2 (en) * 2005-09-13 2008-07-08 Sumika Electronic Materials, Inc. Heterojunction bipolar transistor with improved current gain
KR101649004B1 (ko) * 2009-05-26 2016-08-17 스미또모 가가꾸 가부시키가이샤 반도체 기판, 반도체 기판의 제조 방법 및 전자 디바이스
US20120068228A1 (en) * 2010-09-17 2012-03-22 Yu-Chung Chin HETEROJUNCTION BIOPLAR TRANSISTOR STRUCTURE WITH GaPSbAs BASE

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2262024A1 (de) * 1971-12-21 1973-07-05 Ibm Verfahren zur herstellung von halbleiterbauelementen bzw. halbleiterschaltungen
US3802968A (en) * 1969-11-10 1974-04-09 Ibm Process for a self-isolation monolithic device and pedestal transistor structure
US4965652A (en) * 1971-06-07 1990-10-23 International Business Machines Corporation Dielectric isolation for high density semiconductor devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124444A (ja) * 1998-10-12 2000-04-28 Hitachi Cable Ltd 半導体装置及びエピタキシャルウェハ
JP2000323493A (ja) 1999-05-13 2000-11-24 Hitachi Cable Ltd 半導体装置用ウェハ
JP3613103B2 (ja) * 1999-12-14 2005-01-26 日立電線株式会社 半導体ウェハおよびそれを利用したヘテロバイポーラトランジスタ
JP4019590B2 (ja) 2000-01-20 2007-12-12 日立電線株式会社 半導体装置
JP2001230262A (ja) * 2000-02-17 2001-08-24 Hitachi Cable Ltd 半導体デバイス
JP2001326283A (ja) * 2000-05-15 2001-11-22 Nec Corp 半導体装置および半導体製造方法
JP2002026031A (ja) * 2000-07-06 2002-01-25 Hitachi Cable Ltd ヘテロバイポーラトランジスタ
AU2002219895A1 (en) * 2000-11-27 2002-06-03 Kopin Corporation Bipolar transistor with lattice matched base layer
JP2002299603A (ja) * 2001-03-29 2002-10-11 Nec Corp 半導体装置
JP2002359249A (ja) * 2001-05-31 2002-12-13 Matsushita Electric Ind Co Ltd 化合物半導体装置及びその製造方法
JP2003115495A (ja) * 2001-10-05 2003-04-18 Hitachi Cable Ltd ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ
US6531721B1 (en) * 2001-12-27 2003-03-11 Skyworks Solutions, Inc. Structure for a heterojunction bipolar transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3802968A (en) * 1969-11-10 1974-04-09 Ibm Process for a self-isolation monolithic device and pedestal transistor structure
US4965652A (en) * 1971-06-07 1990-10-23 International Business Machines Corporation Dielectric isolation for high density semiconductor devices
DE2262024A1 (de) * 1971-12-21 1973-07-05 Ibm Verfahren zur herstellung von halbleiterbauelementen bzw. halbleiterschaltungen

Also Published As

Publication number Publication date
US6914274B2 (en) 2005-07-05
CN1452224A (zh) 2003-10-29
US20030197185A1 (en) 2003-10-23
KR20030083599A (ko) 2003-10-30
TW200401342A (en) 2004-01-16
JP2003318186A (ja) 2003-11-07
JP3936618B2 (ja) 2007-06-27

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