SG113388A1 - Exposure method and exposure apparatus - Google Patents

Exposure method and exposure apparatus

Info

Publication number
SG113388A1
SG113388A1 SG200102819A SG200102819A SG113388A1 SG 113388 A1 SG113388 A1 SG 113388A1 SG 200102819 A SG200102819 A SG 200102819A SG 200102819 A SG200102819 A SG 200102819A SG 113388 A1 SG113388 A1 SG 113388A1
Authority
SG
Singapore
Prior art keywords
exposure
exposure apparatus
exposure method
Prior art date
Application number
SG200102819A
Other languages
English (en)
Inventor
Nishi Kenji
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of SG113388A1 publication Critical patent/SG113388A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200102819A 2000-05-11 2001-05-11 Exposure method and exposure apparatus SG113388A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000138684 2000-05-11

Publications (1)

Publication Number Publication Date
SG113388A1 true SG113388A1 (en) 2005-08-29

Family

ID=18646267

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200102819A SG113388A1 (en) 2000-05-11 2001-05-11 Exposure method and exposure apparatus

Country Status (3)

Country Link
US (1) US6704090B2 (de)
EP (1) EP1154330A3 (de)
SG (1) SG113388A1 (de)

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US6440612B1 (en) 1999-09-01 2002-08-27 Micron Technology, Inc. Field correction of overlay error
SG107560A1 (en) 2000-02-25 2004-12-29 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
JP2003059800A (ja) * 2001-08-13 2003-02-28 Canon Inc 発光装置、照明装置、投影露光装置及びデバイス製造方法
DE10138847A1 (de) 2001-08-15 2003-02-27 Zeiss Carl Blende für eine Integratoreinheit
DE10204994B4 (de) * 2002-02-05 2006-11-09 Xtreme Technologies Gmbh Anordnung zur Überwachung der Energieabstrahlung einer EUV-Strahlungsquelle
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
EP1596424B1 (de) * 2003-02-17 2016-11-02 Nikon Corporation Belichtungsvorrichtung und verfahren zur musterbelichtung
DE10323664B4 (de) * 2003-05-14 2006-02-16 Carl Zeiss Smt Ag Belichtungsvorrichtung mit Dosissensorik
JP4666157B2 (ja) * 2003-07-10 2011-04-06 株式会社ニコン 人工水晶部材、露光装置、及び露光装置の製造方法
AU2003273925A1 (en) * 2003-09-26 2005-04-14 Carl Zeiss Smt Ag Method of determining optical properties and projection exposure system comprising a wave front detection system
US7030958B2 (en) * 2003-12-31 2006-04-18 Asml Netherlands B.V. Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method
US7688426B2 (en) * 2004-04-14 2010-03-30 Litel Instruments Method and apparatus for measurement of exit pupil transmittance
KR100606932B1 (ko) * 2004-06-24 2006-08-01 동부일렉트로닉스 주식회사 반도체 제조용 노광 장치 및 방법
US7463367B2 (en) * 2004-07-13 2008-12-09 Micron Technology, Inc. Estimating overlay error and optical aberrations
US7256871B2 (en) * 2004-07-27 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and method for calibrating the same
JP4599936B2 (ja) * 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
US20060087634A1 (en) * 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
WO2006097135A1 (en) * 2005-03-15 2006-09-21 Carl Zeiss Smt Ag Projection exposure method and projection exposure system therefor
US7265815B2 (en) * 2005-05-19 2007-09-04 Asml Holding N.V. System and method utilizing an illumination beam adjusting system
EP1724641A1 (de) * 2005-05-20 2006-11-22 Infineon Technologies AG Lithographischer Projektionsapparat und Methode zur Belichtung eines Halbleiterwafers mit dem Muster einer Maske
WO2006133729A1 (en) * 2005-06-17 2006-12-21 Qimonda Ag Method and system for photolithography
EP1901338A4 (de) * 2005-06-30 2011-06-29 Nikon Corp Belichtungsvorrichtung und verfahren, belichtungsvorrichtungs-wartungsverfahren und bauelemente-herstellungsverfahren
DE102005053651A1 (de) * 2005-11-10 2007-05-16 Zeiss Carl Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie Verfahren zur Herstellung mikrostrukturierter Bauelemente
US20070139630A1 (en) * 2005-12-19 2007-06-21 Nikon Precision, Inc. Changeable Slit to Control Uniformity of Illumination
US7889315B2 (en) * 2006-04-13 2011-02-15 Asml Netherlands B.V. Lithographic apparatus, lens interferometer and device manufacturing method
US7791724B2 (en) 2006-06-13 2010-09-07 Asml Netherlands B.V. Characterization of transmission losses in an optical system
US7705332B2 (en) * 2006-08-19 2010-04-27 Colorado State University Research Foundation Nanometer-scale lithography using extreme ultraviolet/soft x-ray laser interferometry
JP4838698B2 (ja) * 2006-12-19 2011-12-14 キヤノン株式会社 露光装置およびデバイス製造方法
US7714984B2 (en) * 2007-03-28 2010-05-11 Asml Holding N.V. Residual pupil asymmetry compensator for a lithography scanner
DE102012209837A1 (de) * 2012-06-12 2013-12-12 Trumpf Laser- Und Systemtechnik Gmbh EUV-Anregungslichtquelle mit einer Laserstrahlquelle und einer Strahlführungsvorrichtung zum Manipulieren des Laserstrahls
JP6362095B2 (ja) * 2014-06-17 2018-07-25 キヤノン株式会社 照明装置、露光装置、調整方法、及び、物品の製造方法
DE102021120952B3 (de) * 2021-08-11 2022-11-10 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop

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US4516852A (en) * 1981-08-13 1985-05-14 The Perkin-Elmer Corp. Method and apparatus for measuring intensity variation in a light source
EP0633506A1 (de) * 1993-06-11 1995-01-11 Nikon Corporation Abtastbelichtungsvorrichtung
JPH0745502A (ja) * 1993-07-29 1995-02-14 Canon Inc 露光量分布測定方法
US5581075A (en) * 1993-10-06 1996-12-03 Nikon Corporation Multi-beam scanning projection exposure apparatus and method with beam monitoring and control for uniform exposure of large area
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
EP0869396A2 (de) * 1997-03-31 1998-10-07 Svg Lithography Systems, Inc. Einstellbarer Schlitz und Verfahren zur Variation einer Linienbreite
JPH11195597A (ja) * 1998-01-06 1999-07-21 Canon Inc 走査型露光装置
WO1999053380A1 (en) * 1998-04-09 1999-10-21 Tropel Corporation Scanning of non-circular image field formed by asymmetric lens of photolithographic reduction system
US6021009A (en) * 1998-06-30 2000-02-01 Intel Corporation Method and apparatus to improve across field dimensional control in a microlithography tool
JP2000114164A (ja) * 1998-10-09 2000-04-21 Canon Inc 走査型投影露光装置及びそれを用いたデバイスの製造方法

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JPS5928337A (ja) 1982-08-09 1984-02-15 Hitachi Ltd プロジエクシヨンアライナ
JPS5983165A (ja) 1982-11-04 1984-05-14 Hitachi Ltd 照明光源装置
JPS61190935A (ja) 1985-02-20 1986-08-25 Hitachi Ltd 露光装置
US7656504B1 (en) 1990-08-21 2010-02-02 Nikon Corporation Projection exposure apparatus with luminous flux distribution
JP3360686B2 (ja) * 1990-12-27 2002-12-24 株式会社ニコン 照明光学装置および投影露光装置並びに露光方法および素子製造方法
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
JP3141471B2 (ja) * 1991-12-25 2001-03-05 株式会社ニコン ディスク媒体の製造方法、及び製造装置、並びに露光方法及び露光装置
US6078381A (en) * 1993-02-01 2000-06-20 Nikon Corporation Exposure method and apparatus
US5486896A (en) 1993-02-19 1996-01-23 Nikon Corporation Exposure apparatus
JP3374993B2 (ja) 1993-06-11 2003-02-10 株式会社ニコン 投影露光方法及び装置、露光装置、並びに素子製造方法
JP3440458B2 (ja) 1993-06-18 2003-08-25 株式会社ニコン 照明装置、パターン投影方法及び半導体素子の製造方法
JP2862477B2 (ja) * 1993-06-29 1999-03-03 キヤノン株式会社 露光装置及び該露光装置を用いてデバイスを製造する方法
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US6213607B1 (en) * 1994-02-14 2001-04-10 Nikon Corporation Exposure apparatus and field stop thereof
JP3446287B2 (ja) * 1994-03-15 2003-09-16 富士通株式会社 縮小投影露光装置と光軸ずれ補正方法
DE69512625T2 (de) * 1994-12-28 2000-04-06 Canon K.K. Beleuchtungssystem und Abtastbelichtungsapparat
US5684566A (en) * 1995-05-24 1997-11-04 Svg Lithography Systems, Inc. Illumination system and method employing a deformable mirror and diffractive optical elements
JP3711586B2 (ja) * 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
US5841520A (en) * 1995-08-09 1998-11-24 Nikon Corporatioin Exposure apparatus and method that use mark patterns to determine image formation characteristics of the apparatus prior to exposure
JPH1027752A (ja) 1996-07-11 1998-01-27 Nikon Corp 投影露光装置
JPH10199800A (ja) 1997-01-09 1998-07-31 Nikon Corp オプティカルインテグレータを備える照明光学装置
JPH10275771A (ja) * 1997-02-03 1998-10-13 Nikon Corp 照明光学装置
US6333777B1 (en) * 1997-07-18 2001-12-25 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
US6563565B2 (en) * 1997-08-27 2003-05-13 Nikon Corporation Apparatus and method for projection exposure
US6404499B1 (en) 1998-04-21 2002-06-11 Asml Netherlands B.V. Lithography apparatus with filters for optimizing uniformity of an image
EP0952491A3 (de) 1998-04-21 2001-05-09 Asm Lithography B.V. Lithographischer Apparat
JP3937580B2 (ja) 1998-04-30 2007-06-27 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516852A (en) * 1981-08-13 1985-05-14 The Perkin-Elmer Corp. Method and apparatus for measuring intensity variation in a light source
EP0633506A1 (de) * 1993-06-11 1995-01-11 Nikon Corporation Abtastbelichtungsvorrichtung
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JPH0745502A (ja) * 1993-07-29 1995-02-14 Canon Inc 露光量分布測定方法
US5581075A (en) * 1993-10-06 1996-12-03 Nikon Corporation Multi-beam scanning projection exposure apparatus and method with beam monitoring and control for uniform exposure of large area
EP0869396A2 (de) * 1997-03-31 1998-10-07 Svg Lithography Systems, Inc. Einstellbarer Schlitz und Verfahren zur Variation einer Linienbreite
JPH11195597A (ja) * 1998-01-06 1999-07-21 Canon Inc 走査型露光装置
WO1999053380A1 (en) * 1998-04-09 1999-10-21 Tropel Corporation Scanning of non-circular image field formed by asymmetric lens of photolithographic reduction system
US6021009A (en) * 1998-06-30 2000-02-01 Intel Corporation Method and apparatus to improve across field dimensional control in a microlithography tool
JP2000114164A (ja) * 1998-10-09 2000-04-21 Canon Inc 走査型投影露光装置及びそれを用いたデバイスの製造方法

Also Published As

Publication number Publication date
EP1154330A2 (de) 2001-11-14
US20010055103A1 (en) 2001-12-27
EP1154330A3 (de) 2005-05-11
US6704090B2 (en) 2004-03-09

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