SG11202009888RA - Heated ceramic faceplate - Google Patents

Heated ceramic faceplate

Info

Publication number
SG11202009888RA
SG11202009888RA SG11202009888RA SG11202009888RA SG11202009888RA SG 11202009888R A SG11202009888R A SG 11202009888RA SG 11202009888R A SG11202009888R A SG 11202009888RA SG 11202009888R A SG11202009888R A SG 11202009888RA SG 11202009888R A SG11202009888R A SG 11202009888RA
Authority
SG
Singapore
Prior art keywords
heated ceramic
ceramic faceplate
faceplate
heated
ceramic
Prior art date
Application number
SG11202009888RA
Other languages
English (en)
Inventor
Juan Carlos Rocha-Alvarez
David H Quach
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202009888RA publication Critical patent/SG11202009888RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
SG11202009888RA 2018-04-17 2019-03-19 Heated ceramic faceplate SG11202009888RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862658726P 2018-04-17 2018-04-17
PCT/US2019/022958 WO2019203975A1 (en) 2018-04-17 2019-03-19 Heated ceramic faceplate

Publications (1)

Publication Number Publication Date
SG11202009888RA true SG11202009888RA (en) 2020-11-27

Family

ID=68239790

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009888RA SG11202009888RA (en) 2018-04-17 2019-03-19 Heated ceramic faceplate

Country Status (6)

Country Link
US (1) US11434568B2 (ja)
JP (1) JP2021521648A (ja)
KR (1) KR102296914B1 (ja)
CN (2) CN111954927A (ja)
SG (1) SG11202009888RA (ja)
WO (1) WO2019203975A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11242600B2 (en) 2020-06-17 2022-02-08 Applied Materials, Inc. High temperature face plate for deposition application
CN113130354A (zh) * 2021-04-09 2021-07-16 长鑫存储技术有限公司 半导体生产装置

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0738788B1 (en) * 1995-04-20 2003-08-13 Ebara Corporation Thin-Film vapor deposition apparatus
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
KR100492258B1 (ko) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
JP3314151B2 (ja) * 1998-01-05 2002-08-12 株式会社日立国際電気 プラズマｃｖｄ装置及び半導体装置の製造方法
TW582050B (en) * 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
KR100302609B1 (ko) * 1999-05-10 2001-09-13 김영환 온도가변 가스 분사 장치
KR100378871B1 (ko) * 2000-02-16 2003-04-07 주식회사 아펙스 라디칼 증착을 위한 샤워헤드장치
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
TWI334888B (ja) * 2000-09-08 2010-12-21 Tokyo Electron Ltd
KR100676979B1 (ko) * 2001-02-09 2007-02-01 동경 엘렉트론 주식회사 성막 장치
US6818096B2 (en) * 2001-04-12 2004-11-16 Michael Barnes Plasma reactor electrode
TWI224815B (en) * 2001-08-01 2004-12-01 Tokyo Electron Ltd Gas processing apparatus and gas processing method
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7743730B2 (en) * 2005-12-21 2010-06-29 Lam Research Corporation Apparatus for an optimized plasma chamber grounded electrode assembly
US20090071403A1 (en) * 2007-09-19 2009-03-19 Soo Young Choi Pecvd process chamber with cooled backing plate
JP5224855B2 (ja) * 2008-03-05 2013-07-03 東京エレクトロン株式会社 電極ユニット、基板処理装置及び電極ユニットの温度制御方法
US9155134B2 (en) * 2008-10-17 2015-10-06 Applied Materials, Inc. Methods and apparatus for rapidly responsive heat control in plasma processing devices
KR20110054840A (ko) * 2009-11-18 2011-05-25 주식회사 아토 샤워헤드 어셈블리 및 이를 구비한 박막증착장치
US20110180233A1 (en) * 2010-01-27 2011-07-28 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
JP5562413B2 (ja) * 2010-04-22 2014-07-30 京セラ株式会社 薄膜太陽電池の製造方法
DE112011102327T5 (de) * 2010-07-12 2013-06-06 Ulvac, Inc. Schichtbildungsvorrichtung
WO2012122054A2 (en) 2011-03-04 2012-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
TWI534291B (zh) * 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
US9328419B2 (en) * 2012-04-18 2016-05-03 Hermes-Epitek Corporation Gas treatment apparatus with surrounding spray curtains
US20140027060A1 (en) * 2012-07-27 2014-01-30 Applied Matericals, Inc Gas distribution apparatus for substrate processing systems
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
US10256079B2 (en) * 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP6169040B2 (ja) * 2014-05-12 2017-07-26 東京エレクトロン株式会社 プラズマ処理装置の上部電極構造、プラズマ処理装置、及びプラズマ処理装置の運用方法
US10023959B2 (en) * 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
JP6606403B2 (ja) * 2015-11-05 2019-11-13 株式会社ニューフレアテクノロジー シャワープレート、気相成長装置および気相成長方法
KR20180112794A (ko) 2016-01-22 2018-10-12 어플라이드 머티어리얼스, 인코포레이티드 전도성 층들이 매립된 세라믹 샤워헤드
US10780447B2 (en) * 2016-04-26 2020-09-22 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
US10519545B2 (en) * 2016-05-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate
JP6710783B2 (ja) * 2016-06-15 2020-06-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高出力プラズマエッチングプロセスのためのガス分配プレートアセンブリ
US10062585B2 (en) * 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US20190226088A1 (en) * 2018-01-24 2019-07-25 Applied Materials, Inc. High temperature faceplate with thermal choke and cooling
US10872747B2 (en) * 2018-08-08 2020-12-22 Lam Research Corporation Controlling showerhead heating via resistive thermal measurements
US10954595B2 (en) * 2019-07-30 2021-03-23 Applied Materials, Inc. High power showerhead with recursive gas flow distribution
US11242600B2 (en) * 2020-06-17 2022-02-08 Applied Materials, Inc. High temperature face plate for deposition application
US20220010431A1 (en) * 2020-07-08 2022-01-13 Applied Materials, Inc. Multiple-channel showerhead design and methods in manufacturing

Also Published As

Publication number Publication date
JP2021521648A (ja) 2021-08-26
KR20190121258A (ko) 2019-10-25
WO2019203975A1 (en) 2019-10-24
US20210363635A1 (en) 2021-11-25
CN111954927A (zh) 2020-11-17
KR102296914B1 (ko) 2021-08-31
US11434568B2 (en) 2022-09-06
CN210123720U (zh) 2020-03-03

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