SG11202009582SA - Crushed polycrystalline silicon lumps and method for producing same - Google Patents

Crushed polycrystalline silicon lumps and method for producing same

Info

Publication number
SG11202009582SA
SG11202009582SA SG11202009582SA SG11202009582SA SG11202009582SA SG 11202009582S A SG11202009582S A SG 11202009582SA SG 11202009582S A SG11202009582S A SG 11202009582SA SG 11202009582S A SG11202009582S A SG 11202009582SA SG 11202009582S A SG11202009582S A SG 11202009582SA
Authority
SG
Singapore
Prior art keywords
polycrystalline silicon
producing same
silicon lumps
crushed polycrystalline
crushed
Prior art date
Application number
SG11202009582SA
Other languages
English (en)
Inventor
Shigeki Nishimura
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=68060135&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11202009582S(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11202009582SA publication Critical patent/SG11202009582SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/0012—Devices for disintegrating materials by collision of these materials against a breaking surface or breaking body and/or by friction between the material particles (also for grain)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/0056—Other disintegrating devices or methods specially adapted for specific materials not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C23/00—Auxiliary methods or auxiliary devices or accessories specially adapted for crushing or disintegrating not provided for in preceding groups or not specially adapted to apparatus covered by a single preceding group
    • B02C23/18—Adding fluid, other than for crushing or disintegrating by fluid energy
    • B02C23/20—Adding fluid, other than for crushing or disintegrating by fluid energy after crushing or disintegrating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C25/00—Control arrangements specially adapted for crushing or disintegrating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Food Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202009582SA 2018-03-28 2019-03-25 Crushed polycrystalline silicon lumps and method for producing same SG11202009582SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018061666 2018-03-28
PCT/JP2019/012542 WO2019189001A1 (ja) 2018-03-28 2019-03-25 多結晶シリコン破砕塊およびその製造方法

Publications (1)

Publication Number Publication Date
SG11202009582SA true SG11202009582SA (en) 2020-10-29

Family

ID=68060135

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009582SA SG11202009582SA (en) 2018-03-28 2019-03-25 Crushed polycrystalline silicon lumps and method for producing same

Country Status (9)

Country Link
US (1) US11498840B2 (zh)
EP (1) EP3760585B9 (zh)
JP (1) JP6636225B1 (zh)
KR (1) KR102210411B1 (zh)
CN (1) CN111936418B (zh)
MY (1) MY193927A (zh)
SG (1) SG11202009582SA (zh)
TW (1) TWI803604B (zh)
WO (1) WO2019189001A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4186859A1 (en) 2020-08-27 2023-05-31 Tokuyama Corporation Crushed polycrystalline silicon lumps and method for producing same
WO2024061466A1 (de) 2022-09-22 2024-03-28 Wacker Chemie Ag Herstellung von siliciumbruchstücken mit reduziertem oberflächenmetallgehalt

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188986A (en) * 1991-05-17 1993-02-23 United Microelectronics Corporation Hydrogen peroxide in basic solution to clean polycrystalline silicon after phosphorous diffusion
JPH0621034A (ja) 1992-07-02 1994-01-28 Nec Kyushu Ltd 半導体基板の洗浄液
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
DE19741465A1 (de) * 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
DE102004048948A1 (de) 2004-10-07 2006-04-20 Wacker Chemie Ag Vorrichtung und Verfahren zum kontaminationsarmen, automatischen Brechen von Siliciumbruch
KR100685735B1 (ko) * 2005-08-11 2007-02-26 삼성전자주식회사 폴리실리콘 제거용 조성물, 이를 이용한 폴리실리콘 제거방법 및 반도체 장치의 제조 방법
DE102006014874A1 (de) 2006-03-30 2007-10-04 Wacker Chemie Ag Vorrichtung und Verfahren zum Zerkleinern von grobteilig gebrochenem polykristallinem Silicium
DE102006035081A1 (de) * 2006-07-28 2008-01-31 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von klassiertem polykristallinen Siliciumbruch in hoher Reinheit
DE102006040486A1 (de) * 2006-08-30 2008-03-13 Wacker Chemie Ag Verfahren zur zerstörungsfreien Materialprüfung von hochreinem polykristallinen Silicium
DE102007039626A1 (de) 2007-08-22 2009-02-26 Wacker Chemie Ag Verfahren zum Reinigen von polykristallinem Silicium
CN101139367A (zh) 2007-09-27 2008-03-12 上海交通大学 1,2-二取代二茂钌面手性配体及其合成方法
CN101319367B (zh) * 2008-07-03 2012-05-30 华南师范大学 高温真空预处理制备太阳能级多晶硅的方法
DE102008040231A1 (de) * 2008-07-07 2008-12-18 Wacker Chemie Ag Polykristalliner Siliciumbruch hoher Reinheit und Reinigungsverfahren zu seiner Herstellung
DE102010039752A1 (de) * 2010-08-25 2012-03-01 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu dessen Herstellung
CN102251242A (zh) * 2011-07-05 2011-11-23 国电宁夏太阳能有限公司 多晶硅清洗方法
DE102011089356A1 (de) * 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristallines Siliciumstück und Verfahren zum Brechen eines Siliciumkörpers
DE102012200992A1 (de) 2012-01-24 2013-07-25 Wacker Chemie Ag Dotierstoffarmes polykristallines Siliciumstück
DE102012213869A1 (de) * 2012-08-06 2014-02-06 Wacker Chemie Ag Polykristalline Siliciumbruchstücke und Verfahren zu deren Herstellung
JP2015122455A (ja) 2013-12-25 2015-07-02 日立金属株式会社 半導体ウェハの製造方法および半導体ウェハ
CN105934408A (zh) 2014-02-14 2016-09-07 德山株式会社 清净化多结晶硅块破碎物的制造装置及利用该制造装置制造清净化多结晶硅块破碎物的方法
JP6433674B2 (ja) * 2014-04-07 2018-12-05 株式会社トクヤマ 多結晶シリコンの洗浄方法
JP6403525B2 (ja) * 2014-10-01 2018-10-10 信越化学工業株式会社 多結晶シリコンの表面清浄度評価方法および品質保証方法
CN104409324A (zh) * 2014-11-12 2015-03-11 吉林华微电子股份有限公司 能够避免沾污的多晶硅磷掺杂后处理清洗方法
JP2016222470A (ja) 2015-05-27 2016-12-28 信越化学工業株式会社 多結晶シリコン片

Also Published As

Publication number Publication date
WO2019189001A1 (ja) 2019-10-03
KR20200127212A (ko) 2020-11-10
EP3760585B9 (en) 2024-04-24
JP6636225B1 (ja) 2020-01-29
JPWO2019189001A1 (ja) 2020-04-30
MY193927A (en) 2022-11-01
KR102210411B1 (ko) 2021-01-29
TW202003935A (zh) 2020-01-16
EP3760585A1 (en) 2021-01-06
US20210114884A1 (en) 2021-04-22
EP3760585A4 (en) 2021-11-24
TWI803604B (zh) 2023-06-01
EP3760585B1 (en) 2024-01-31
US11498840B2 (en) 2022-11-15
CN111936418A (zh) 2020-11-13
CN111936418B (zh) 2021-11-23

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