SG11202009404SA - Method for manufacturing a substrate for a radiofrequency device - Google Patents
Method for manufacturing a substrate for a radiofrequency deviceInfo
- Publication number
- SG11202009404SA SG11202009404SA SG11202009404SA SG11202009404SA SG11202009404SA SG 11202009404S A SG11202009404S A SG 11202009404SA SG 11202009404S A SG11202009404S A SG 11202009404SA SG 11202009404S A SG11202009404S A SG 11202009404SA SG 11202009404S A SG11202009404S A SG 11202009404SA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- manufacturing
- radiofrequency device
- radiofrequency
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1852574A FR3079345B1 (fr) | 2018-03-26 | 2018-03-26 | Procede de fabrication d'un substrat pour dispositif radiofrequence |
PCT/FR2019/050685 WO2019186053A1 (fr) | 2018-03-26 | 2019-03-26 | Procede de fabrication d'un substrat pour dispositif radiofrequence |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202009404SA true SG11202009404SA (en) | 2020-10-29 |
Family
ID=62751059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202009404SA SG11202009404SA (en) | 2018-03-26 | 2019-03-26 | Method for manufacturing a substrate for a radiofrequency device |
Country Status (8)
Country | Link |
---|---|
US (2) | US11870411B2 (zh) |
EP (1) | EP3776632A1 (zh) |
JP (1) | JP2021519537A (zh) |
KR (1) | KR20200136427A (zh) |
CN (1) | CN111919285B (zh) |
FR (1) | FR3079345B1 (zh) |
SG (1) | SG11202009404SA (zh) |
WO (1) | WO2019186053A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201905013VA (en) * | 2018-06-11 | 2020-01-30 | Skyworks Solutions Inc | Acoustic wave device with spinel layer |
US11876501B2 (en) | 2019-02-26 | 2024-01-16 | Skyworks Solutions, Inc. | Acoustic wave device with multi-layer substrate including ceramic |
FR3108788A1 (fr) * | 2020-03-24 | 2021-10-01 | Soitec | Procédé de fabrication d’une structure piézoélectrique pour dispositif radiofréquence et pouvant servir pour le transfert d’une couche piézoélectrique, et procédé de transfert d’une telle couche piézoélectrique |
FR3108789B1 (fr) * | 2020-03-24 | 2023-12-08 | Soitec Silicon On Insulator | Procédé de fabrication d’une structure piézoélectrique pour dispositif radiofréquence et pouvant servir pour le transfert d’une couche piézoélectrique, et procédé de transfert d’une telle couche piézoélectrique |
FR3131436A1 (fr) * | 2021-12-23 | 2023-06-30 | Soitec | Procede de fabrication d’un substrat donneur |
FR3131979A1 (fr) * | 2022-01-17 | 2023-07-21 | Soitec | Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010013993A (ko) * | 1997-06-19 | 2001-02-26 | 야마모토 카즈모토 | Soi 기판과 그 제조 방법, 및 반도체 디바이스와 그제조 방법 |
JP3144345B2 (ja) * | 1997-06-27 | 2001-03-12 | 日本電気株式会社 | 弾性表面波チップの実装方法 |
JP2001053579A (ja) * | 1999-06-02 | 2001-02-23 | Matsushita Electric Ind Co Ltd | 弾性表面波素子と移動体通信機器 |
WO2001063759A1 (en) * | 2000-02-22 | 2001-08-30 | Koninklijke Philips Electronics N.V. | Method of manufacturing a piezoeletric filter with an acoustic resonator situated on an acoustic reflector layer formed on a carrier substrate |
JP3520853B2 (ja) * | 2001-01-26 | 2004-04-19 | 株式会社村田製作所 | 弾性表面波素子及びその製造方法 |
JP4949014B2 (ja) * | 2003-01-07 | 2012-06-06 | ソワテク | 薄層を除去した後の多層構造を備えるウェハのリサイクル |
US7031600B2 (en) * | 2003-04-07 | 2006-04-18 | Applied Materials, Inc. | Method and apparatus for silicon oxide deposition on large area substrates |
JP2005011393A (ja) * | 2003-06-17 | 2005-01-13 | Fuji Photo Film Co Ltd | 光情報媒体の製造方法 |
JP2007501525A (ja) * | 2003-08-04 | 2007-01-25 | ナノシス・インコーポレイテッド | ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法 |
JP2005229455A (ja) * | 2004-02-16 | 2005-08-25 | Shin Etsu Chem Co Ltd | 複合圧電基板 |
KR101429098B1 (ko) * | 2004-06-04 | 2014-09-22 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치 |
WO2006033822A2 (en) * | 2004-09-07 | 2006-03-30 | Massachusetts Institute Of Technology | Fabrication of electronic and photonic systems on flexible substrates by layer transfer method |
FR2888663B1 (fr) * | 2005-07-13 | 2008-04-18 | Soitec Silicon On Insulator | Procede de diminution de la rugosite d'une couche epaisse d'isolant |
JP2007221665A (ja) * | 2006-02-20 | 2007-08-30 | Toshiba Corp | 薄膜圧電共振器及びその製造方法、並びに、これを用いたフィルタ |
US7935568B2 (en) * | 2006-10-31 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer-level fabrication of lidded chips with electrodeposited dielectric coating |
FR2933233B1 (fr) * | 2008-06-30 | 2010-11-26 | Soitec Silicon On Insulator | Substrat de haute resistivite bon marche et procede de fabrication associe |
US8886334B2 (en) * | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
US8865489B2 (en) * | 2009-05-12 | 2014-10-21 | The Board Of Trustees Of The University Of Illinois | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
JP5429200B2 (ja) * | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | 複合圧電基板の製造方法および圧電デバイス |
WO2012021197A2 (en) * | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof |
CN102624352B (zh) * | 2010-10-06 | 2015-12-09 | 日本碍子株式会社 | 复合基板的制造方法以及复合基板 |
JP5796316B2 (ja) | 2011-03-22 | 2015-10-21 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
FR2973158B1 (fr) * | 2011-03-22 | 2014-02-28 | Soitec Silicon On Insulator | Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences |
JP5783256B2 (ja) * | 2011-08-26 | 2015-09-24 | 株式会社村田製作所 | 圧電デバイス、および、圧電デバイスの製造方法 |
WO2013031651A1 (ja) * | 2011-09-02 | 2013-03-07 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
FR2985601B1 (fr) * | 2012-01-06 | 2016-06-03 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat et structure semiconducteur |
JP5961863B2 (ja) | 2012-04-04 | 2016-08-02 | 株式会社ユニバーサルエンターテインメント | 遊技機 |
EP3311422A4 (en) * | 2015-06-19 | 2019-06-12 | Qmat, Inc. | PROCESS FOR LAYER AND SEPARATION TRANSFER |
FR3045678B1 (fr) * | 2015-12-22 | 2017-12-22 | Soitec Silicon On Insulator | Procede de fabrication d'une couche piezoelectrique monocristalline et dispositif microelectronique, photonique ou optique comprenant une telle couche |
US10629468B2 (en) * | 2016-02-11 | 2020-04-21 | Skyworks Solutions, Inc. | Device packaging using a recyclable carrier substrate |
JP6825822B2 (ja) * | 2016-05-11 | 2021-02-03 | 京セラ株式会社 | 容量素子、弾性波素子および弾性波モジュール |
FR3053532B1 (fr) | 2016-06-30 | 2018-11-16 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
JP6250856B1 (ja) * | 2016-07-20 | 2017-12-20 | 信越化学工業株式会社 | 表面弾性波デバイス用複合基板及びその製造方法とこの複合基板を用いた表面弾性波デバイス |
JP6621384B2 (ja) * | 2016-07-20 | 2019-12-18 | 信越化学工業株式会社 | 弾性表面波デバイス用複合基板の製造方法 |
-
2018
- 2018-03-26 FR FR1852574A patent/FR3079345B1/fr active Active
-
2019
- 2019-03-26 JP JP2020551935A patent/JP2021519537A/ja active Pending
- 2019-03-26 WO PCT/FR2019/050685 patent/WO2019186053A1/fr unknown
- 2019-03-26 KR KR1020207029654A patent/KR20200136427A/ko not_active Application Discontinuation
- 2019-03-26 EP EP19719549.8A patent/EP3776632A1/fr active Pending
- 2019-03-26 SG SG11202009404SA patent/SG11202009404SA/en unknown
- 2019-03-26 US US17/041,367 patent/US11870411B2/en active Active
- 2019-03-26 CN CN201980022402.2A patent/CN111919285B/zh active Active
-
2024
- 2024-01-04 US US18/404,685 patent/US20240146275A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20210075389A1 (en) | 2021-03-11 |
CN111919285A (zh) | 2020-11-10 |
WO2019186053A1 (fr) | 2019-10-03 |
US11870411B2 (en) | 2024-01-09 |
JP2021519537A (ja) | 2021-08-10 |
US20240146275A1 (en) | 2024-05-02 |
CN111919285B (zh) | 2024-03-29 |
KR20200136427A (ko) | 2020-12-07 |
FR3079345A1 (fr) | 2019-09-27 |
EP3776632A1 (fr) | 2021-02-17 |
FR3079345B1 (fr) | 2020-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11202009404SA (en) | Method for manufacturing a substrate for a radiofrequency device | |
GB201801337D0 (en) | Method for etching a semiconductor structure | |
IL282101B (en) | Determining a correction to the process | |
PT3123975T (pt) | Corpo digitalizador | |
EP3657923A4 (en) | ELECTRONIC DEVICE MANUFACTURING PROCESS | |
SG10201604900TA (en) | Method for Manufacturing A High-Resistivity Semiconductor-on-Insulator Substrate | |
SG11202113246XA (en) | Method for manufacturing electronic device | |
GB201817789D0 (en) | Method for configuring a matching component | |
EP3657532A4 (en) | METHOD OF MANUFACTURING AN ELECTRONIC DEVICE | |
SG11202009374YA (en) | Method for manufacturing electronic device | |
GB201800281D0 (en) | Method for forming a coating on an elctronic or electrical device | |
SG11202109903XA (en) | Method for manufacturing electronic device | |
ZA201903579B (en) | Method for manufacturing a complex-formed component | |
GB2594679B (en) | Method for manufacturing a connecting part | |
GB201604818D0 (en) | Method for forming structures upon a substrate | |
HK1250281A1 (zh) | 製造半導體裝置的方法 | |
PT3539792T (pt) | Método para o fabrico de estruturas num substrato | |
EP3691415A4 (en) | METHOD OF MANUFACTURING ORGANIC ELECTRONIC DEVICES | |
SG11202109973WA (en) | Method for manufacturing electronic device | |
EP3843504A4 (en) | METHOD OF MAKING AN ELECTRONIC DEVICE | |
SG11202011164PA (en) | Method for manufacturing semiconductor device | |
PL3501466T3 (pl) | Sposób obróbki podłoża | |
PL3825003T3 (pl) | Sposób wytwarzania urządzenia mikroprzepływowego | |
SG11202103941PA (en) | Semiconductor device manufacturing method | |
EP3817034A4 (en) | MANUFACTURING PROCESSES FOR SEMICONDUCTOR COMPONENTS |