SG11202008523QA - Resistance-area (ra) control in layers deposited in physical vapor deposition chamber - Google Patents

Resistance-area (ra) control in layers deposited in physical vapor deposition chamber

Info

Publication number
SG11202008523QA
SG11202008523QA SG11202008523QA SG11202008523QA SG11202008523QA SG 11202008523Q A SG11202008523Q A SG 11202008523QA SG 11202008523Q A SG11202008523Q A SG 11202008523QA SG 11202008523Q A SG11202008523Q A SG 11202008523QA SG 11202008523Q A SG11202008523Q A SG 11202008523QA
Authority
SG
Singapore
Prior art keywords
resistance
area
control
vapor deposition
physical vapor
Prior art date
Application number
SG11202008523QA
Other languages
English (en)
Inventor
Rongjun Wang
Xiaodong Wang
Chao Du
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202008523QA publication Critical patent/SG11202008523QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3473—Composition uniformity or desired gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3482—Detecting or avoiding eroding through
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Formation Of Insulating Films (AREA)
SG11202008523QA 2018-03-21 2019-03-20 Resistance-area (ra) control in layers deposited in physical vapor deposition chamber SG11202008523QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862646186P 2018-03-21 2018-03-21
US16/358,465 US11542589B2 (en) 2018-03-21 2019-03-19 Resistance-area (RA) control in layers deposited in physical vapor deposition chamber
PCT/US2019/023146 WO2019183210A1 (en) 2018-03-21 2019-03-20 Resistance-area (ra) control in layers deposited in physical vapor deposition chamber

Publications (1)

Publication Number Publication Date
SG11202008523QA true SG11202008523QA (en) 2020-10-29

Family

ID=67983522

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202008523QA SG11202008523QA (en) 2018-03-21 2019-03-20 Resistance-area (ra) control in layers deposited in physical vapor deposition chamber

Country Status (8)

Country Link
US (1) US11542589B2 (zh)
EP (1) EP3768872A4 (zh)
JP (1) JP2021519383A (zh)
KR (1) KR20200123851A (zh)
CN (1) CN112020572B (zh)
SG (1) SG11202008523QA (zh)
TW (1) TWI835782B (zh)
WO (1) WO2019183210A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
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EP3794157B1 (en) * 2018-05-17 2022-03-16 Evatec AG Method of treating a substrate and vacuum deposition apparatus
US11126769B2 (en) * 2020-02-04 2021-09-21 Applied Materials, Inc. Unified material-to-systems simulation, design, and verification for semiconductor design and manufacturing
CN115595541A (zh) * 2021-06-28 2023-01-13 北京超弦存储器研究院（Cn） 一种可基于溅射功率调整ra值原理的隧穿磁电阻和磁性随机存储器的制备方法

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US6042700A (en) 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6080285A (en) 1998-09-14 2000-06-27 Applied Materials, Inc. Multiple step ionized metal plasma deposition process for conformal step coverage
JP2000144417A (ja) * 1998-11-13 2000-05-26 Canon Inc 高周波スパッタリング装置
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7573686B2 (en) * 2006-06-26 2009-08-11 Tdk Corporation Thin-film magnetic head including low-resistance TMR element
JP4942445B2 (ja) * 2006-09-08 2012-05-30 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
US8133360B2 (en) 2007-12-20 2012-03-13 Applied Materials, Inc. Prediction and compensation of erosion in a magnetron sputtering target
US7977111B2 (en) * 2008-01-18 2011-07-12 Magic Technologies, Inc. Devices using addressable magnetic tunnel junction array to detect magnetic particles
WO2009151767A2 (en) * 2008-04-21 2009-12-17 Honeywell International Inc. Design and use of dc magnetron sputtering systems
US20130134032A1 (en) * 2008-06-25 2013-05-30 Canon Anelva Corporation Method of fabricating and apparatus of fabricating tunnel magnetic resistive element
US8846451B2 (en) * 2010-07-30 2014-09-30 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features
US9499901B2 (en) 2012-01-27 2016-11-22 Applied Materials, Inc. High density TiN RF/DC PVD deposition with stress tuning
US9194045B2 (en) 2012-04-03 2015-11-24 Novellus Systems, Inc. Continuous plasma and RF bias to regulate damage in a substrate processing system
SG11201504875UA (en) * 2012-12-20 2015-07-30 Canon Anelva Corp Method for manufacturing magnetoresistance effect element
US10242873B2 (en) * 2014-03-06 2019-03-26 Applied Materials, Inc. RF power compensation to control film stress, density, resistivity, and/or uniformity through target life
US9464352B2 (en) * 2014-05-02 2016-10-11 Asm Ip Holding B.V. Low-oxidation plasma-assisted process
US10113228B2 (en) * 2014-06-20 2018-10-30 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling semiconductor deposition operation
US10283334B2 (en) * 2014-08-22 2019-05-07 Applied Materials, Inc. Methods and apparatus for maintaining low non-uniformity over target life
KR20160056376A (ko) * 2014-11-10 2016-05-20 삼성전자주식회사 금속 산화막을 형성하는 방법 및 이를 포함하는 자기 메모리 장치
US10400327B2 (en) * 2015-01-31 2019-09-03 Applied Materials, Inc. Counter based time compensation to reduce process shifting in reactive magnetron sputtering reactor
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KR102408685B1 (ko) * 2017-10-16 2022-06-15 삼성전자주식회사 반도체 소자의 제조를 위한 공정 제어 방법 및 시스템

Also Published As

Publication number Publication date
CN112020572B (zh) 2023-06-16
EP3768872A4 (en) 2021-12-08
EP3768872A1 (en) 2021-01-27
US20190292651A1 (en) 2019-09-26
JP2021519383A (ja) 2021-08-10
WO2019183210A1 (en) 2019-09-26
TW201945564A (zh) 2019-12-01
US11542589B2 (en) 2023-01-03
KR20200123851A (ko) 2020-10-30
TWI835782B (zh) 2024-03-21
CN112020572A (zh) 2020-12-01

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