SG11201504875UA - Method for manufacturing magnetoresistance effect element - Google Patents

Method for manufacturing magnetoresistance effect element

Info

Publication number
SG11201504875UA
SG11201504875UA SG11201504875UA SG11201504875UA SG11201504875UA SG 11201504875U A SG11201504875U A SG 11201504875UA SG 11201504875U A SG11201504875U A SG 11201504875UA SG 11201504875U A SG11201504875U A SG 11201504875UA SG 11201504875U A SG11201504875U A SG 11201504875UA
Authority
SG
Singapore
Prior art keywords
effect element
magnetoresistance effect
manufacturing magnetoresistance
manufacturing
magnetoresistance
Prior art date
Application number
SG11201504875UA
Inventor
Takuya Seino
Kazumasa Nishimura
Hiroki Okuyama
Yuichi Otani
Yuta Murooka
Yoshimitsu Shimane
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of SG11201504875UA publication Critical patent/SG11201504875UA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/80—Constructional details
    • H10N35/85—Magnetostrictive active materials
SG11201504875UA 2012-12-20 2013-09-04 Method for manufacturing magnetoresistance effect element SG11201504875UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012278264 2012-12-20
PCT/JP2013/005249 WO2014097510A1 (en) 2012-12-20 2013-09-04 Method for manufacturing magnetoresistance effect element

Publications (1)

Publication Number Publication Date
SG11201504875UA true SG11201504875UA (en) 2015-07-30

Family

ID=50977880

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504875UA SG11201504875UA (en) 2012-12-20 2013-09-04 Method for manufacturing magnetoresistance effect element

Country Status (8)

Country Link
US (1) US9865805B2 (en)
JP (1) JP5882502B2 (en)
KR (1) KR101743498B1 (en)
CN (1) CN104885245B (en)
DE (1) DE112013006168B4 (en)
SG (1) SG11201504875UA (en)
TW (1) TWI552399B (en)
WO (1) WO2014097510A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015072140A1 (en) 2013-11-18 2015-05-21 キヤノンアネルバ株式会社 Magnetoresistive-element manufacturing method
JP6305864B2 (en) * 2014-07-31 2018-04-04 東京エレクトロン株式会社 Film forming apparatus and film forming method
JP5848494B1 (en) * 2015-02-02 2016-01-27 キヤノンアネルバ株式会社 Method for manufacturing perpendicular magnetization type MTJ element
DE112016002318B4 (en) 2015-05-22 2021-01-14 Canon Anelva Corporation Magnetoresistance effect device
GB2548644B (en) * 2015-10-21 2020-09-02 Canon Anelva Corp Method for manufacturing magnetoresistive device
US10050192B2 (en) * 2015-12-11 2018-08-14 Imec Vzw Magnetic memory device having buffer layer
CN107264075B (en) * 2016-04-08 2020-11-06 株式会社御牧工程 Bonding method, method for producing ink layer formed body, and ink layer formed body
US10361361B2 (en) * 2016-04-08 2019-07-23 International Business Machines Corporation Thin reference layer for STT MRAM
JP6280610B1 (en) * 2016-10-03 2018-02-14 Tdk株式会社 Magnetoresistive element, manufacturing method thereof, and position detection apparatus
US11264290B2 (en) * 2017-09-06 2022-03-01 Tdk Corporation Tunnel magnetoresistive effect element and magnetic memory
US10741742B2 (en) * 2018-02-28 2020-08-11 The Regents Of The University Of Colorado, A Body Corporate Enhanced superconducting transition temperature in electroplated rhenium
US11542589B2 (en) * 2018-03-21 2023-01-03 Applied Materials, Inc. Resistance-area (RA) control in layers deposited in physical vapor deposition chamber
US10648069B2 (en) * 2018-10-16 2020-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation
CN110098318B (en) * 2019-05-10 2020-11-03 北京航空航天大学 Multi-film layer structure with interface perpendicular magnetic anisotropy and magnetic random access memory
US11177430B2 (en) 2019-06-17 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method thereof

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0165484B1 (en) 1995-11-28 1999-02-01 김광호 Method of depositing ta2o5 and apparatus thereof
JP2000232222A (en) * 1999-02-10 2000-08-22 Nec Corp Manufacture of semiconductor device
JP2002043299A (en) * 2000-07-19 2002-02-08 Tokyo Electron Ltd Heat treatment method of object to be treated
JP2003304012A (en) * 2002-04-10 2003-10-24 Matsushita Electric Ind Co Ltd Tunnel magnetoresistive element
JPWO2003092084A1 (en) 2002-04-23 2005-09-02 松下電器産業株式会社 Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory and magnetic recording apparatus using the same
US6774012B1 (en) * 2002-11-08 2004-08-10 Cypress Semiconductor Corp. Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall
TW200629008A (en) * 2005-01-18 2006-08-16 Nikon Corp Liquid removing apparatus, exposure apparatus and device manufacturing method
US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
WO2008011579A2 (en) 2006-07-21 2008-01-24 Aixtron, Inc. Small volume symmetric flow single wafer ald apparatus
JP2008103662A (en) 2006-09-21 2008-05-01 Alps Electric Co Ltd Tunnel type magnetic detection element, and its manufacturing method
JP5210533B2 (en) 2006-09-21 2013-06-12 アルプス電気株式会社 Tunnel-type magnetic sensing element and manufacturing method thereof
CN100557840C (en) * 2006-09-21 2009-11-04 阿尔卑斯电气株式会社 The CoFeB layer constitutes the tunnel type magnetic detecting element and the method for making thereof of fixed bed at least a portion
WO2009031232A1 (en) * 2007-09-07 2009-03-12 Canon Anelva Corporation Sputtering method and system
US20130134032A1 (en) 2008-06-25 2013-05-30 Canon Anelva Corporation Method of fabricating and apparatus of fabricating tunnel magnetic resistive element
JP5341082B2 (en) 2008-06-25 2013-11-13 キヤノンアネルバ株式会社 Tunnel magnetoresistive element manufacturing method and manufacturing apparatus
WO2010008021A1 (en) * 2008-07-15 2010-01-21 キヤノンアネルバ株式会社 Plasma treatment method and plasma treatment device
WO2010044134A1 (en) * 2008-10-14 2010-04-22 キヤノンアネルバ株式会社 Process for producing magnetoresistance effect element and program for producing magnetoresistance effect element
JP5320171B2 (en) * 2009-06-05 2013-10-23 東京エレクトロン株式会社 Substrate processing equipment
JP5382744B2 (en) * 2009-06-24 2014-01-08 キヤノンアネルバ株式会社 Vacuum heating / cooling apparatus and method of manufacturing magnetoresistive element
US8609262B2 (en) * 2009-07-17 2013-12-17 Magic Technologies, Inc. Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application
JP5247619B2 (en) 2009-07-28 2013-07-24 キヤノンアネルバ株式会社 Dielectric film, semiconductor device manufacturing method using the dielectric film, and semiconductor manufacturing apparatus
TW201135845A (en) * 2009-10-09 2011-10-16 Canon Anelva Corp Acuum heating and cooling apparatus
JP2011134909A (en) * 2009-12-24 2011-07-07 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device, and substrate processing system
KR101374325B1 (en) * 2009-12-28 2014-03-14 캐논 아네르바 가부시키가이샤 Method for manufacturing a magnetoresistive element
WO2011081202A1 (en) 2009-12-29 2011-07-07 キヤノンアネルバ株式会社 Method for manufacturing an electronic component, electronic component, plasma treatment device, control program, and recording medium
WO2012086183A1 (en) * 2010-12-22 2012-06-28 株式会社アルバック Method for producing tunneling magnetoresistance element
DE112011104624B4 (en) 2010-12-28 2019-01-24 Canon Anelva Corporation Method for producing a semiconductor device
JP5999543B2 (en) * 2012-01-16 2016-09-28 株式会社アルバック Method for manufacturing tunnel magnetoresistive element
WO2014024358A1 (en) 2012-08-10 2014-02-13 キヤノンアネルバ株式会社 Tunnel magnetoresistive element manufacturing apparatus

Also Published As

Publication number Publication date
TWI552399B (en) 2016-10-01
DE112013006168T5 (en) 2015-09-17
US20160005958A1 (en) 2016-01-07
KR20150090125A (en) 2015-08-05
KR101743498B1 (en) 2017-06-05
US9865805B2 (en) 2018-01-09
WO2014097510A1 (en) 2014-06-26
JP5882502B2 (en) 2016-03-09
CN104885245A (en) 2015-09-02
TW201448301A (en) 2014-12-16
JPWO2014097510A1 (en) 2017-01-12
CN104885245B (en) 2017-06-13
DE112013006168B4 (en) 2023-12-28

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