SG11201708865PA - Magnetoresistance effect element - Google Patents
Magnetoresistance effect elementInfo
- Publication number
- SG11201708865PA SG11201708865PA SG11201708865PA SG11201708865PA SG11201708865PA SG 11201708865P A SG11201708865P A SG 11201708865PA SG 11201708865P A SG11201708865P A SG 11201708865PA SG 11201708865P A SG11201708865P A SG 11201708865PA SG 11201708865P A SG11201708865P A SG 11201708865PA
- Authority
- SG
- Singapore
- Prior art keywords
- effect element
- magnetoresistance effect
- magnetoresistance
- effect
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
- H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
- H01F10/3236—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015104341 | 2015-05-22 | ||
PCT/JP2016/000158 WO2016189772A1 (en) | 2015-05-22 | 2016-01-14 | Magnetoresistive effect element |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201708865PA true SG11201708865PA (en) | 2017-11-29 |
Family
ID=57393088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201708865PA SG11201708865PA (en) | 2015-05-22 | 2016-01-14 | Magnetoresistance effect element |
Country Status (6)
Country | Link |
---|---|
US (1) | US9853207B2 (en) |
KR (1) | KR101800237B1 (en) |
DE (1) | DE112016002318B4 (en) |
SG (1) | SG11201708865PA (en) |
TW (1) | TWI632711B (en) |
WO (1) | WO2016189772A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5848494B1 (en) | 2015-02-02 | 2016-01-27 | キヤノンアネルバ株式会社 | Method for manufacturing perpendicular magnetization type MTJ element |
WO2018139276A1 (en) * | 2017-01-24 | 2018-08-02 | 国立大学法人東北大学 | Method for producing tunnel magnetoresistive element |
US10255935B2 (en) * | 2017-07-21 | 2019-04-09 | Applied Materials, Inc. | Magnetic tunnel junctions suitable for high temperature thermal processing |
US10388853B2 (en) * | 2017-12-29 | 2019-08-20 | Spin Memory, Inc. | Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers |
KR101993186B1 (en) | 2018-12-04 | 2019-06-27 | 이용근 | Shut type continuous packing machine |
KR102632986B1 (en) * | 2019-10-01 | 2024-02-05 | 에스케이하이닉스 주식회사 | Electronic device |
CN116243222B (en) * | 2023-03-16 | 2023-09-29 | 珠海多创科技有限公司 | Magnetoresistive device, manufacturing method thereof and magnetic sensing device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4444241B2 (en) | 2005-10-19 | 2010-03-31 | 株式会社東芝 | Magnetoresistive element, magnetic random access memory, electronic card and electronic device |
US20130134032A1 (en) | 2008-06-25 | 2013-05-30 | Canon Anelva Corporation | Method of fabricating and apparatus of fabricating tunnel magnetic resistive element |
WO2009157064A1 (en) | 2008-06-25 | 2009-12-30 | キヤノンアネルバ株式会社 | Method and equipment for manufacturing tunnel magnetoresistive element |
WO2011081203A1 (en) | 2009-12-28 | 2011-07-07 | キヤノンアネルバ株式会社 | Method for manufacturing a magnetoresistive element |
US8946837B2 (en) * | 2011-07-04 | 2015-02-03 | Kabushiki Kaisha Toshiba | Semiconductor storage device with magnetoresistive element |
US8871365B2 (en) * | 2012-02-28 | 2014-10-28 | Headway Technologies, Inc. | High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications |
JP5836163B2 (en) * | 2012-03-08 | 2015-12-24 | ルネサスエレクトロニクス株式会社 | Magnetic memory cell and method for manufacturing magnetic memory cell |
JP6244617B2 (en) | 2012-09-28 | 2017-12-13 | ソニー株式会社 | Storage element, storage device, magnetic head |
SG11201504875UA (en) | 2012-12-20 | 2015-07-30 | Canon Anelva Corp | Method for manufacturing magnetoresistance effect element |
JP6016946B2 (en) | 2012-12-20 | 2016-10-26 | キヤノンアネルバ株式会社 | Oxidation treatment apparatus, oxidation method, and electronic device manufacturing method |
WO2015072140A1 (en) | 2013-11-18 | 2015-05-21 | キヤノンアネルバ株式会社 | Magnetoresistive-element manufacturing method |
US9379314B2 (en) * | 2013-12-17 | 2016-06-28 | Qualcomm Incorporated | Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) |
JP6095806B2 (en) | 2014-02-14 | 2017-03-15 | キヤノンアネルバ株式会社 | Tunnel magnetoresistive element manufacturing method and sputtering apparatus |
JP5848494B1 (en) | 2015-02-02 | 2016-01-27 | キヤノンアネルバ株式会社 | Method for manufacturing perpendicular magnetization type MTJ element |
-
2016
- 2016-01-14 SG SG11201708865PA patent/SG11201708865PA/en unknown
- 2016-01-14 WO PCT/JP2016/000158 patent/WO2016189772A1/en active Application Filing
- 2016-01-14 KR KR1020167028980A patent/KR101800237B1/en active IP Right Grant
- 2016-01-14 DE DE112016002318.9T patent/DE112016002318B4/en active Active
- 2016-04-18 TW TW105112007A patent/TWI632711B/en active
- 2016-09-07 US US15/258,096 patent/US9853207B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20160380187A1 (en) | 2016-12-29 |
DE112016002318T5 (en) | 2018-03-08 |
KR101800237B1 (en) | 2017-11-22 |
TWI632711B (en) | 2018-08-11 |
US9853207B2 (en) | 2017-12-26 |
WO2016189772A1 (en) | 2016-12-01 |
TW201705564A (en) | 2017-02-01 |
KR20170013206A (en) | 2017-02-06 |
DE112016002318B4 (en) | 2021-01-14 |
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