SG11202004504VA - Ring structures and systems for use in a plasma chamber - Google Patents
Ring structures and systems for use in a plasma chamberInfo
- Publication number
- SG11202004504VA SG11202004504VA SG11202004504VA SG11202004504VA SG11202004504VA SG 11202004504V A SG11202004504V A SG 11202004504VA SG 11202004504V A SG11202004504V A SG 11202004504VA SG 11202004504V A SG11202004504V A SG 11202004504VA SG 11202004504V A SG11202004504V A SG 11202004504VA
- Authority
- SG
- Singapore
- Prior art keywords
- systems
- plasma chamber
- ring structures
- structures
- ring
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Robotics (AREA)
- Drying Of Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2017/066874 WO2019117969A1 (en) | 2017-12-15 | 2017-12-15 | Ring structures and systems for use in a plasma chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202004504VA true SG11202004504VA (en) | 2020-07-29 |
Family
ID=66820564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202004504VA SG11202004504VA (en) | 2017-12-15 | 2017-12-15 | Ring structures and systems for use in a plasma chamber |
Country Status (7)
Country | Link |
---|---|
US (3) | US20200365378A1 (ja) |
EP (1) | EP3724912A4 (ja) |
JP (3) | JP7101778B2 (ja) |
KR (6) | KR20240045363A (ja) |
CN (4) | CN111466009B (ja) |
SG (1) | SG11202004504VA (ja) |
WO (1) | WO2019117969A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102200315B1 (ko) * | 2019-07-29 | 2021-01-08 | 세메스 주식회사 | 기판 지지 장치 및 이를 포함하는 기판 처리 장치 |
CN112687510B (zh) * | 2019-10-18 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 一种防止约束环发生电弧损伤的等离子体处理器和方法 |
CN114078680B (zh) * | 2020-08-20 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置 |
US20230066418A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for a plasma-based semiconductor processing tool |
US20240038503A1 (en) | 2022-07-29 | 2024-02-01 | Hana Materials Inc. | Focus ring and method for manufacturing the same |
WO2024097679A1 (en) * | 2022-11-03 | 2024-05-10 | Lam Research Corporation | Systems and methods for increasing a heat transfer contact area associated with an edge ring |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6106625A (en) * | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
US6013984A (en) * | 1998-06-10 | 2000-01-11 | Lam Research Corporation | Ion energy attenuation method by determining the required number of ion collisions |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
US6896765B2 (en) * | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
JP4286025B2 (ja) * | 2003-03-03 | 2009-06-24 | 川崎マイクロエレクトロニクス株式会社 | 石英治具の再生方法、再生使用方法および半導体装置の製造方法 |
JP2004296553A (ja) * | 2003-03-25 | 2004-10-21 | Ngk Insulators Ltd | 半導体製造装置用部材 |
US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
US8524005B2 (en) * | 2006-07-07 | 2013-09-03 | Tokyo Electron Limited | Heat-transfer structure and substrate processing apparatus |
JP2008078208A (ja) | 2006-09-19 | 2008-04-03 | Tokyo Electron Ltd | フォーカスリング及びプラズマ処理装置 |
JP2009054630A (ja) | 2007-08-23 | 2009-03-12 | Tokyo Electron Ltd | シリンダ停止位置可変機構及びそれを備えた基板処理装置 |
JP5281811B2 (ja) * | 2008-03-13 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材 |
WO2010021890A2 (en) * | 2008-08-19 | 2010-02-25 | Lam Research Corporation | Edge rings for electrostatic chucks |
KR101701101B1 (ko) | 2008-10-31 | 2017-01-31 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버의 하부 전극 어셈블리 |
DE202010015933U1 (de) * | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
US8597462B2 (en) * | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
US8485128B2 (en) * | 2010-06-30 | 2013-07-16 | Lam Research Corporation | Movable ground ring for a plasma processing chamber |
US8826855B2 (en) * | 2010-06-30 | 2014-09-09 | Lam Research Corporation | C-shaped confinement ring for a plasma processing chamber |
KR101246670B1 (ko) * | 2010-10-26 | 2013-03-25 | 주식회사 템네스트 | 반도체 제조설비의 정전척 |
US20140017900A1 (en) * | 2011-03-29 | 2014-01-16 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
JP5893516B2 (ja) | 2012-06-22 | 2016-03-23 | 東京エレクトロン株式会社 | 被処理体の処理装置及び被処理体の載置台 |
US9129899B2 (en) * | 2013-07-17 | 2015-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for thinning wafer thereof |
JP2015050156A (ja) | 2013-09-04 | 2015-03-16 | 東京エレクトロン株式会社 | 基板載置台及びプラズマ処理装置 |
US10804081B2 (en) * | 2013-12-20 | 2020-10-13 | Lam Research Corporation | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber |
JP6219229B2 (ja) | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構 |
JP5767373B2 (ja) | 2014-07-29 | 2015-08-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法並びにこれを実施するためのプログラムを記憶する記憶媒体 |
KR102401501B1 (ko) * | 2014-12-19 | 2022-05-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 프로세싱 챔버를 위한 에지 링 |
US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US10854492B2 (en) * | 2015-08-18 | 2020-12-01 | Lam Research Corporation | Edge ring assembly for improving feature profile tilting at extreme edge of wafer |
KR102382823B1 (ko) * | 2015-09-04 | 2022-04-06 | 삼성전자주식회사 | 에어 홀을 갖는 링 부재 및 그를 포함하는 기판 처리 장치 |
KR102634280B1 (ko) * | 2015-10-21 | 2024-02-07 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
US11276590B2 (en) * | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
-
2017
- 2017-12-15 SG SG11202004504VA patent/SG11202004504VA/en unknown
- 2017-12-15 US US16/888,557 patent/US20200365378A1/en not_active Abandoned
- 2017-12-15 KR KR1020247009973A patent/KR20240045363A/ko active Application Filing
- 2017-12-15 CN CN201780097690.9A patent/CN111466009B/zh active Active
- 2017-12-15 KR KR1020217000935A patent/KR102383784B1/ko active IP Right Grant
- 2017-12-15 CN CN202310715034.8A patent/CN116884825A/zh active Pending
- 2017-12-15 KR KR1020207020316A patent/KR102204181B1/ko active IP Right Grant
- 2017-12-15 CN CN202310713047.1A patent/CN116884824A/zh active Pending
- 2017-12-15 KR KR1020247011965A patent/KR20240049660A/ko active IP Right Grant
- 2017-12-15 WO PCT/US2017/066874 patent/WO2019117969A1/en unknown
- 2017-12-15 KR KR1020227011030A patent/KR102505152B1/ko active IP Right Grant
- 2017-12-15 EP EP17934871.9A patent/EP3724912A4/en active Pending
- 2017-12-15 KR KR1020237006795A patent/KR102652428B1/ko active IP Right Grant
- 2017-12-15 JP JP2020531462A patent/JP7101778B2/ja active Active
- 2017-12-15 CN CN202310709842.3A patent/CN116884823A/zh active Pending
-
2022
- 2022-07-05 JP JP2022108065A patent/JP7442582B2/ja active Active
-
2024
- 2024-01-05 US US18/405,997 patent/US20240162015A1/en active Pending
- 2024-02-20 JP JP2024023320A patent/JP2024056956A/ja active Pending
- 2024-03-26 US US18/617,587 patent/US20240266151A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2022133380A (ja) | 2022-09-13 |
JP2024056956A (ja) | 2024-04-23 |
EP3724912A1 (en) | 2020-10-21 |
KR102505152B1 (ko) | 2023-02-28 |
CN115938902A (zh) | 2023-04-07 |
KR20200088917A (ko) | 2020-07-23 |
KR20230032002A (ko) | 2023-03-07 |
US20240162015A1 (en) | 2024-05-16 |
US20240266151A1 (en) | 2024-08-08 |
CN111466009A (zh) | 2020-07-28 |
CN116884825A (zh) | 2023-10-13 |
WO2019117969A1 (en) | 2019-06-20 |
EP3724912A4 (en) | 2021-08-11 |
KR20210008146A (ko) | 2021-01-20 |
CN116884823A (zh) | 2023-10-13 |
KR20220045086A (ko) | 2022-04-12 |
CN111466009B (zh) | 2023-07-07 |
KR102383784B1 (ko) | 2022-04-08 |
CN116884824A (zh) | 2023-10-13 |
JP7101778B2 (ja) | 2022-07-15 |
JP2023182784A (ja) | 2023-12-26 |
US20200365378A1 (en) | 2020-11-19 |
KR20240045363A (ko) | 2024-04-05 |
KR102204181B1 (ko) | 2021-01-19 |
KR102652428B1 (ko) | 2024-03-27 |
JP2021515383A (ja) | 2021-06-17 |
KR20240049660A (ko) | 2024-04-16 |
JP7442582B2 (ja) | 2024-03-04 |
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