SG11202004420QA - Photoresist remover compositions - Google Patents

Photoresist remover compositions

Info

Publication number
SG11202004420QA
SG11202004420QA SG11202004420QA SG11202004420QA SG11202004420QA SG 11202004420Q A SG11202004420Q A SG 11202004420QA SG 11202004420Q A SG11202004420Q A SG 11202004420QA SG 11202004420Q A SG11202004420Q A SG 11202004420QA SG 11202004420Q A SG11202004420Q A SG 11202004420QA
Authority
SG
Singapore
Prior art keywords
photoresist remover
remover compositions
compositions
photoresist
remover
Prior art date
Application number
SG11202004420QA
Other languages
English (en)
Inventor
Robert Arent
Hengpeng Wu
Guanyang Lin
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11202004420QA publication Critical patent/SG11202004420QA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C11D1/721—End blocked ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/83—Mixtures of non-ionic with anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3454—Organic compounds containing sulfur containing sulfone groups, e.g. vinyl sulfones
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007—Heating the liquid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG11202004420QA 2018-01-25 2019-01-23 Photoresist remover compositions SG11202004420QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862621760P 2018-01-25 2018-01-25
PCT/EP2019/051534 WO2019145312A1 (en) 2018-01-25 2019-01-23 Photoresist remover compositions

Publications (1)

Publication Number Publication Date
SG11202004420QA true SG11202004420QA (en) 2020-06-29

Family

ID=65228539

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202004420QA SG11202004420QA (en) 2018-01-25 2019-01-23 Photoresist remover compositions

Country Status (7)

Country Link
US (1) US11365379B2 (ja)
EP (1) EP3743773B1 (ja)
JP (2) JP7175316B2 (ja)
KR (1) KR102448220B1 (ja)
CN (1) CN111512239B (ja)
SG (1) SG11202004420QA (ja)
WO (1) WO2019145312A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7377206B2 (ja) * 2018-01-25 2023-11-09 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトレジストリムーバ組成物
KR102448220B1 (ko) 2018-01-25 2022-09-27 메르크 파텐트 게엠베하 포토레지스트 제거제 조성물

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455076A1 (fr) 1979-04-24 1980-11-21 Rhone Poulenc Ind Composition pour l'elimination des resines photoresistantes
US4971715A (en) 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
US5885901A (en) 1994-08-11 1999-03-23 Texas Instruments Incorporated Rinsing solution after resist stripping process and method for manufacturing semiconductor device
US6323168B1 (en) * 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6231677B1 (en) * 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
KR100538501B1 (ko) * 1999-08-16 2005-12-23 신에쓰 가가꾸 고교 가부시끼가이샤 신규한 오늄염, 레지스트 재료용 광산발생제, 레지스트재료 및 패턴 형성 방법
US6486108B1 (en) 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
US6576394B1 (en) 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
US6699825B2 (en) 2001-01-12 2004-03-02 S.C. Johnson & Son, Inc. Acidic hard-surface antimicrobial cleaner
US6551973B1 (en) 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
JP3787085B2 (ja) 2001-12-04 2006-06-21 関東化学株式会社 フォトレジスト残渣除去液組成物
TWI284783B (en) * 2003-05-08 2007-08-01 Du Pont Photoresist compositions and processes for preparing the same
KR20050120914A (ko) 2004-06-21 2005-12-26 주식회사 동진쎄미켐 레지스트 제거용 조성물
JP4776191B2 (ja) 2004-08-25 2011-09-21 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
US7601482B2 (en) 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
US8288330B2 (en) * 2006-05-26 2012-10-16 Air Products And Chemicals, Inc. Composition and method for photoresist removal
SG166102A1 (en) 2007-03-31 2010-11-29 Advanced Tech Materials Methods for stripping material for wafer reclamation
US20100112728A1 (en) 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
US20100183853A1 (en) * 2007-06-12 2010-07-22 Takashi Ihara Stripping agent for resist film on/above conductive polymer, method for stripping resist film, and substrate having patterned conductive polymer
WO2009058278A1 (en) 2007-10-29 2009-05-07 Ekc Technology, Inc Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
EP2219882A4 (en) 2007-11-16 2011-11-23 Ekc Technology Inc COMPOSITIONS FOR REMOVING METAL HARD MASK REST OF A SEMICONDUCTOR SUBSTRATE
JP5195063B2 (ja) 2008-06-19 2013-05-08 東ソー株式会社 レジスト剥離液
EP2342738A4 (en) 2008-10-02 2013-04-17 Advanced Tech Materials USE OF TENSID / DETOINT MIXTURES FOR INCREASED METAL LOADING AND SURFACE PASSIVATION OF SILICON SUBSTRATES
US8754021B2 (en) * 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
JP5657318B2 (ja) * 2010-09-27 2015-01-21 富士フイルム株式会社 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法
KR101846597B1 (ko) * 2010-10-01 2018-04-06 미쯔비시 케미컬 주식회사 반도체 디바이스용 기판의 세정액 및 세정 방법
SG10201508015RA (en) 2010-10-06 2015-10-29 Entegris Inc Composition and process for selectively etching metal nitrides
WO2012154498A2 (en) 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
FR2976290B1 (fr) * 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
EP2798669B1 (en) * 2011-12-28 2021-03-31 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
KR102105381B1 (ko) * 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
US9090859B2 (en) 2012-03-27 2015-07-28 Sachem, Inc. Quaternary ammonium hydroxides
JP6157081B2 (ja) * 2012-09-24 2017-07-05 東京応化工業株式会社 フォトリソグラフィ用剥離液、及びパターン形成方法
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US20160075971A1 (en) * 2013-04-22 2016-03-17 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US10920141B2 (en) * 2013-06-06 2021-02-16 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN103336412B (zh) * 2013-07-03 2017-02-08 北京科华微电子材料有限公司 一种新型的光刻胶剥离液及其应用工艺
KR102420338B1 (ko) * 2014-06-04 2022-07-13 엔테그리스, 아이엔씨. 금속, 유전체 및 니트라이드 상용성을 가진 반사-방지 코팅 세정 및 에칭-후 잔류물 제거 조성물
CN107155367B (zh) * 2014-06-30 2021-12-21 恩特格里斯公司 利用钨及钴兼容性移除蚀刻后残余物的含水及半含水清洁剂
KR102247235B1 (ko) * 2015-01-26 2021-05-03 동우 화인켐 주식회사 티타늄막 식각액 조성물
EP3268810B1 (en) 2015-03-12 2022-07-06 Merck Patent GmbH Compositions and methods that promote charge complexing copper protection during low pka driven polymer stripping
WO2017023677A1 (en) * 2015-08-03 2017-02-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning composition
US10319605B2 (en) * 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method
WO2018067763A1 (en) * 2016-10-06 2018-04-12 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations for removing residues on semiconductor substrates
SG11201906882RA (en) * 2017-02-10 2019-08-27 Fujifilm Electronic Materials Usa Inc Cleaning formulations
CN110475845B (zh) * 2017-03-24 2022-02-25 富士胶片电子材料美国有限公司 用于移除半导体基板上的残余物的清洁组合物
KR102448220B1 (ko) 2018-01-25 2022-09-27 메르크 파텐트 게엠베하 포토레지스트 제거제 조성물

Also Published As

Publication number Publication date
KR102448220B1 (ko) 2022-09-27
TW201934736A (zh) 2019-09-01
CN111512239A (zh) 2020-08-07
US11365379B2 (en) 2022-06-21
EP3743773B1 (en) 2022-04-06
JP7175316B2 (ja) 2022-11-18
CN111512239B (zh) 2024-05-03
JP2022191267A (ja) 2022-12-27
KR20200110429A (ko) 2020-09-23
EP3743773A1 (en) 2020-12-02
WO2019145312A1 (en) 2019-08-01
JP2021511419A (ja) 2021-05-06
US20210115362A1 (en) 2021-04-22

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