SG11202001658YA - Systems and methods for achieving peak ion energy enhancement with a low angular spread - Google Patents

Systems and methods for achieving peak ion energy enhancement with a low angular spread

Info

Publication number
SG11202001658YA
SG11202001658YA SG11202001658YA SG11202001658YA SG11202001658YA SG 11202001658Y A SG11202001658Y A SG 11202001658YA SG 11202001658Y A SG11202001658Y A SG 11202001658YA SG 11202001658Y A SG11202001658Y A SG 11202001658YA SG 11202001658Y A SG11202001658Y A SG 11202001658YA
Authority
SG
Singapore
Prior art keywords
systems
methods
ion energy
angular spread
low angular
Prior art date
Application number
SG11202001658YA
Other languages
English (en)
Inventor
Juline Shoeb
Ying Wu
Alex Paterson
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11202001658YA publication Critical patent/SG11202001658YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
SG11202001658YA 2017-08-31 2018-08-23 Systems and methods for achieving peak ion energy enhancement with a low angular spread SG11202001658YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/693,134 US10395894B2 (en) 2017-08-31 2017-08-31 Systems and methods for achieving peak ion energy enhancement with a low angular spread
PCT/US2018/047710 WO2019046093A1 (en) 2017-08-31 2018-08-23 SYSTEMS AND METHODS FOR ENHANCED ION ENERGY IMPROVEMENT WITH LOW ANGULAR SIZE

Publications (1)

Publication Number Publication Date
SG11202001658YA true SG11202001658YA (en) 2020-03-30

Family

ID=65437643

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202001658YA SG11202001658YA (en) 2017-08-31 2018-08-23 Systems and methods for achieving peak ion energy enhancement with a low angular spread

Country Status (7)

Country Link
US (5) US10395894B2 (zh)
JP (3) JP7229232B2 (zh)
KR (1) KR20200038316A (zh)
CN (2) CN118380304A (zh)
SG (1) SG11202001658YA (zh)
TW (2) TWI803513B (zh)
WO (1) WO2019046093A1 (zh)

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US10395894B2 (en) 2017-08-31 2019-08-27 Lam Research Corporation Systems and methods for achieving peak ion energy enhancement with a low angular spread
KR102550393B1 (ko) * 2017-10-25 2023-06-30 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 장치의 제조 방법
US10679825B2 (en) * 2017-11-15 2020-06-09 Lam Research Corporation Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate
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TWI726258B (zh) * 2017-11-17 2021-05-01 新加坡商Ａｅｓ全球公司 用於電漿處理之方法和系統以及相關的非暫時性電腦可讀取媒體
US10714319B2 (en) * 2018-02-21 2020-07-14 Applied Materials, Inc. Apparatus and methods for removing contaminant particles in a plasma process
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US11315757B2 (en) * 2019-08-13 2022-04-26 Mks Instruments, Inc. Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications
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KR20220010648A (ko) 2020-07-16 2022-01-26 삼성전자주식회사 플라즈마 식각 장치, 플라즈마 식각 방법 및 그를 포함하는 반도체 소자의 제조 방법
US11462389B2 (en) * 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
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US11527384B2 (en) 2020-11-24 2022-12-13 Mks Instruments, Inc. Apparatus and tuning method for mitigating RF load impedance variations due to periodic disturbances
WO2022163535A1 (ja) * 2021-01-29 2022-08-04 東京エレクトロン株式会社 プラズマ処理装置及びソース高周波電力のソース周波数を制御する方法
WO2022177846A1 (en) * 2021-02-22 2022-08-25 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
US20230170194A1 (en) * 2021-11-29 2023-06-01 Applied Materials, Inc. Ion energy control on electrodes in a plasma reactor
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Also Published As

Publication number Publication date
US11049693B2 (en) 2021-06-29
US11569067B2 (en) 2023-01-31
US10395894B2 (en) 2019-08-27
JP7471478B2 (ja) 2024-04-19
US20210313149A1 (en) 2021-10-07
TW202331785A (zh) 2023-08-01
US20190066979A1 (en) 2019-02-28
US20230124201A1 (en) 2023-04-20
KR20200038316A (ko) 2020-04-10
CN118380304A (zh) 2024-07-23
JP2024095763A (ja) 2024-07-10
CN111295731A (zh) 2020-06-16
US20240162005A1 (en) 2024-05-16
US11915912B2 (en) 2024-02-27
CN111295731B (zh) 2024-04-09
WO2019046093A1 (en) 2019-03-07
JP2023062052A (ja) 2023-05-02
US20190362942A1 (en) 2019-11-28
TW201923816A (zh) 2019-06-16
JP7229232B2 (ja) 2023-02-27
TWI803513B (zh) 2023-06-01
JP2020532859A (ja) 2020-11-12

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