SG11202000308TA - Cutting method - Google Patents
Cutting methodInfo
- Publication number
- SG11202000308TA SG11202000308TA SG11202000308TA SG11202000308TA SG11202000308TA SG 11202000308T A SG11202000308T A SG 11202000308TA SG 11202000308T A SG11202000308T A SG 11202000308TA SG 11202000308T A SG11202000308T A SG 11202000308TA SG 11202000308T A SG11202000308T A SG 11202000308TA
- Authority
- SG
- Singapore
- Prior art keywords
- workpiece
- forming
- etching process
- pressure
- dry etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 8
- 238000001312 dry etching Methods 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Drying Of Semiconductors (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017140871A JP6925900B2 (ja) | 2017-07-20 | 2017-07-20 | 切断加工方法 |
PCT/JP2018/026851 WO2019017367A1 (ja) | 2017-07-20 | 2018-07-18 | 切断加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202000308TA true SG11202000308TA (en) | 2020-02-27 |
Family
ID=65015109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202000308TA SG11202000308TA (en) | 2017-07-20 | 2018-07-18 | Cutting method |
Country Status (8)
Country | Link |
---|---|
US (1) | US11380586B2 (zh) |
JP (1) | JP6925900B2 (zh) |
KR (1) | KR20200029541A (zh) |
CN (1) | CN110998798A (zh) |
DE (1) | DE112018003719T5 (zh) |
SG (1) | SG11202000308TA (zh) |
TW (1) | TWI760531B (zh) |
WO (1) | WO2019017367A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7486398B2 (ja) | 2020-10-19 | 2024-05-17 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273082A (ja) | 2002-03-14 | 2003-09-26 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2004359475A (ja) | 2003-06-02 | 2004-12-24 | Seiko Epson Corp | 光学素子の製造方法及び光学装置 |
JP5041681B2 (ja) | 2004-06-29 | 2012-10-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7452786B2 (en) * | 2004-06-29 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit, and element substrate |
JP2006040914A (ja) * | 2004-07-22 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 半導体ウェハの分割方法及び分割装置 |
KR101506355B1 (ko) | 2007-05-25 | 2015-03-26 | 하마마츠 포토닉스 가부시키가이샤 | 절단용 가공방법 |
JP5264383B2 (ja) | 2008-09-17 | 2013-08-14 | 東京エレクトロン株式会社 | ドライエッチング方法 |
US20110061812A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US8722516B2 (en) * | 2010-09-28 | 2014-05-13 | Hamamatsu Photonics K.K. | Laser processing method and method for manufacturing light-emitting device |
JP2013042119A (ja) | 2011-07-21 | 2013-02-28 | Hamamatsu Photonics Kk | 発光素子の製造方法 |
JP5939752B2 (ja) * | 2011-09-01 | 2016-06-22 | 株式会社ディスコ | ウェーハの分割方法 |
JP5713043B2 (ja) | 2012-05-07 | 2015-05-07 | 株式会社デンソー | 半導体基板の製造方法 |
US8993414B2 (en) * | 2012-07-13 | 2015-03-31 | Applied Materials, Inc. | Laser scribing and plasma etch for high die break strength and clean sidewall |
-
2017
- 2017-07-20 JP JP2017140871A patent/JP6925900B2/ja active Active
-
2018
- 2018-07-18 KR KR1020207004266A patent/KR20200029541A/ko not_active IP Right Cessation
- 2018-07-18 TW TW107124812A patent/TWI760531B/zh active
- 2018-07-18 US US16/632,291 patent/US11380586B2/en active Active
- 2018-07-18 DE DE112018003719.3T patent/DE112018003719T5/de active Pending
- 2018-07-18 WO PCT/JP2018/026851 patent/WO2019017367A1/ja active Application Filing
- 2018-07-18 SG SG11202000308TA patent/SG11202000308TA/en unknown
- 2018-07-18 CN CN201880048776.7A patent/CN110998798A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20200365460A1 (en) | 2020-11-19 |
JP2019021834A (ja) | 2019-02-07 |
DE112018003719T5 (de) | 2020-04-02 |
KR20200029541A (ko) | 2020-03-18 |
WO2019017367A1 (ja) | 2019-01-24 |
CN110998798A (zh) | 2020-04-10 |
TW201921468A (zh) | 2019-06-01 |
TWI760531B (zh) | 2022-04-11 |
US11380586B2 (en) | 2022-07-05 |
JP6925900B2 (ja) | 2021-08-25 |
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