SG11201912232WA - Etching method and plasma etching material - Google Patents

Etching method and plasma etching material

Info

Publication number
SG11201912232WA
SG11201912232WA SG11201912232WA SG11201912232WA SG11201912232WA SG 11201912232W A SG11201912232W A SG 11201912232WA SG 11201912232W A SG11201912232W A SG 11201912232WA SG 11201912232W A SG11201912232W A SG 11201912232WA SG 11201912232W A SG11201912232W A SG 11201912232WA
Authority
SG
Singapore
Prior art keywords
etching
plasma
plasma etching
etching method
etching material
Prior art date
Application number
SG11201912232WA
Other languages
English (en)
Inventor
Keiichiro Urabe
Peng Shen
Chih-Yu Hsu
Nathan Stafford
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Publication of SG11201912232WA publication Critical patent/SG11201912232WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
SG11201912232WA 2017-06-27 2018-06-20 Etching method and plasma etching material SG11201912232WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017125070A JP6896522B2 (ja) 2017-06-27 2017-06-27 エッチング方法およびプラズマエッチング用材料
PCT/EP2018/066486 WO2019002058A1 (en) 2017-06-27 2018-06-20 ETCHING METHOD AND PLASMA ETCHING MATERIAL

Publications (1)

Publication Number Publication Date
SG11201912232WA true SG11201912232WA (en) 2020-01-30

Family

ID=62948071

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201912232WA SG11201912232WA (en) 2017-06-27 2018-06-20 Etching method and plasma etching material

Country Status (6)

Country Link
JP (1) JP6896522B2 (ja)
KR (1) KR102563633B1 (ja)
CN (1) CN110832623B (ja)
SG (1) SG11201912232WA (ja)
TW (1) TWI749216B (ja)
WO (1) WO2019002058A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102244862B1 (ko) * 2020-08-04 2021-04-27 (주)원익머트리얼즈 식각 가스 혼합물과 이를 이용한 패턴 형성 방법
KR102244885B1 (ko) * 2021-02-03 2021-04-27 (주)원익머트리얼즈 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정
KR102489934B1 (ko) * 2021-02-17 2023-01-18 대전대학교 산학협력단 식각 처리 장치 및 식각 처리 방법
US20230094212A1 (en) * 2021-09-30 2023-03-30 Tokyo Electron Limited Plasma etch process for fabricating high aspect ratio (har) features

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163476A (ja) * 1992-11-18 1994-06-10 Sony Corp ドライエッチング方法
IL119598A0 (en) * 1995-11-17 1997-02-18 Air Prod & Chem Plasma etch with trifluoroacetic acid or its derivatives
US5626775A (en) * 1996-05-13 1997-05-06 Air Products And Chemicals, Inc. Plasma etch with trifluoroacetic acid and derivatives
JP4095246B2 (ja) 1997-07-22 2008-06-04 松下電器産業株式会社 半導体装置の製造方法
US6242359B1 (en) * 1997-08-20 2001-06-05 Air Liquide America Corporation Plasma cleaning and etching methods using non-global-warming compounds
JPH11124386A (ja) * 1997-10-17 1999-05-11 Asahi Denka Kogyo Kk トリメトキシシランの安定化方法
US20050011859A1 (en) * 2003-07-15 2005-01-20 Bing Ji Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications
US20050241671A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for removing a substance from a substrate using electron attachment
JP2006128245A (ja) * 2004-10-27 2006-05-18 Sony Corp 絶縁膜の加工方法
US9514959B2 (en) 2012-10-30 2016-12-06 American Air Liquide, Inc. Fluorocarbon molecules for high aspect ratio oxide etch
JP6327295B2 (ja) * 2015-08-12 2018-05-23 セントラル硝子株式会社 ドライエッチング方法

Also Published As

Publication number Publication date
JP2019009335A (ja) 2019-01-17
KR20200018627A (ko) 2020-02-19
CN110832623B (zh) 2024-01-19
KR102563633B1 (ko) 2023-08-07
TW201906004A (zh) 2019-02-01
TWI749216B (zh) 2021-12-11
JP6896522B2 (ja) 2021-06-30
WO2019002058A1 (en) 2019-01-03
CN110832623A (zh) 2020-02-21

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