KR102563633B1 - 에칭 방법 및 플라즈마 에칭 재료 - Google Patents
에칭 방법 및 플라즈마 에칭 재료 Download PDFInfo
- Publication number
- KR102563633B1 KR102563633B1 KR1020207001019A KR20207001019A KR102563633B1 KR 102563633 B1 KR102563633 B1 KR 102563633B1 KR 1020207001019 A KR1020207001019 A KR 1020207001019A KR 20207001019 A KR20207001019 A KR 20207001019A KR 102563633 B1 KR102563633 B1 KR 102563633B1
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- gas
- reaction chamber
- film
- plasma
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 173
- 239000000463 material Substances 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000001020 plasma etching Methods 0.000 title claims abstract description 12
- 150000008282 halocarbons Chemical class 0.000 claims abstract description 92
- 238000006243 chemical reaction Methods 0.000 claims abstract description 82
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 49
- 239000007789 gas Substances 0.000 claims description 112
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 42
- 230000001590 oxidative effect Effects 0.000 claims description 38
- 239000011261 inert gas Substances 0.000 claims description 35
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 30
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 30
- 229910052740 iodine Inorganic materials 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 230000003746 surface roughness Effects 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- -1 SiOC Inorganic materials 0.000 claims description 6
- 229910020175 SiOH Inorganic materials 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 125000001153 fluoro group Chemical group F* 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 230000007246 mechanism Effects 0.000 description 21
- 229920005591 polysilicon Polymers 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 18
- 238000005259 measurement Methods 0.000 description 17
- 125000004430 oxygen atom Chemical group O* 0.000 description 17
- 238000005498 polishing Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 11
- 239000007800 oxidant agent Substances 0.000 description 10
- 238000005406 washing Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000011160 research Methods 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 6
- 229920002313 fluoropolymer Polymers 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- YXVFQADLFFNVDS-UHFFFAOYSA-N diammonium citrate Chemical compound [NH4+].[NH4+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O YXVFQADLFFNVDS-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- QAEDZJGFFMLHHQ-UHFFFAOYSA-N trifluoroacetic anhydride Chemical compound FC(F)(F)C(=O)OC(=O)C(F)(F)F QAEDZJGFFMLHHQ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000403 monosodium phosphate Inorganic materials 0.000 description 2
- 235000019799 monosodium phosphate Nutrition 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 2
- MLIKYFGFHUYZAL-UHFFFAOYSA-K trisodium;hydron;phosphonato phosphate Chemical compound [Na+].[Na+].[Na+].OP([O-])(=O)OP([O-])([O-])=O MLIKYFGFHUYZAL-UHFFFAOYSA-K 0.000 description 2
- 238000001238 wet grinding Methods 0.000 description 2
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical class [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910000617 Mangalloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2017-125070 | 2017-06-27 | ||
| JP2017125070A JP6896522B2 (ja) | 2017-06-27 | 2017-06-27 | エッチング方法およびプラズマエッチング用材料 |
| PCT/EP2018/066486 WO2019002058A1 (en) | 2017-06-27 | 2018-06-20 | ETCHING METHOD AND PLASMA ETCHING MATERIAL |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200018627A KR20200018627A (ko) | 2020-02-19 |
| KR102563633B1 true KR102563633B1 (ko) | 2023-08-07 |
Family
ID=62948071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207001019A KR102563633B1 (ko) | 2017-06-27 | 2018-06-20 | 에칭 방법 및 플라즈마 에칭 재료 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP6896522B2 (ja) |
| KR (1) | KR102563633B1 (ja) |
| CN (1) | CN110832623B (ja) |
| SG (1) | SG11201912232WA (ja) |
| TW (1) | TWI749216B (ja) |
| WO (1) | WO2019002058A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
| KR102244885B1 (ko) * | 2021-02-03 | 2021-04-27 | (주)원익머트리얼즈 | 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정 |
| KR102489934B1 (ko) * | 2021-02-17 | 2023-01-18 | 대전대학교 산학협력단 | 식각 처리 장치 및 식각 처리 방법 |
| US20230094212A1 (en) * | 2021-09-30 | 2023-03-30 | Tokyo Electron Limited | Plasma etch process for fabricating high aspect ratio (har) features |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001217226A (ja) | 1997-07-22 | 2001-08-10 | Matsushita Electric Ind Co Ltd | 半導体装置の製造装置及びその製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163476A (ja) * | 1992-11-18 | 1994-06-10 | Sony Corp | ドライエッチング方法 |
| US5626775A (en) * | 1996-05-13 | 1997-05-06 | Air Products And Chemicals, Inc. | Plasma etch with trifluoroacetic acid and derivatives |
| IL119598A0 (en) * | 1995-11-17 | 1997-02-18 | Air Prod & Chem | Plasma etch with trifluoroacetic acid or its derivatives |
| WO1999008805A1 (en) * | 1997-08-20 | 1999-02-25 | Air Liquide Electronics Chemicals & Services, Inc. | Plasma cleaning and etching methods using non-global-warming compounds |
| JPH11124386A (ja) * | 1997-10-17 | 1999-05-11 | Asahi Denka Kogyo Kk | トリメトキシシランの安定化方法 |
| US20050011859A1 (en) * | 2003-07-15 | 2005-01-20 | Bing Ji | Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications |
| US20050241671A1 (en) * | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for removing a substance from a substrate using electron attachment |
| JP2006128245A (ja) * | 2004-10-27 | 2006-05-18 | Sony Corp | 絶縁膜の加工方法 |
| KR101564182B1 (ko) * | 2012-10-30 | 2015-10-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 규소-함유 필름의 에칭을 위한 방법 및 에칭 가스 |
| JP6327295B2 (ja) * | 2015-08-12 | 2018-05-23 | セントラル硝子株式会社 | ドライエッチング方法 |
-
2017
- 2017-06-27 JP JP2017125070A patent/JP6896522B2/ja active Active
-
2018
- 2018-04-20 TW TW107113536A patent/TWI749216B/zh active
- 2018-06-20 WO PCT/EP2018/066486 patent/WO2019002058A1/en active Application Filing
- 2018-06-20 CN CN201880041923.8A patent/CN110832623B/zh active Active
- 2018-06-20 SG SG11201912232WA patent/SG11201912232WA/en unknown
- 2018-06-20 KR KR1020207001019A patent/KR102563633B1/ko active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001217226A (ja) | 1997-07-22 | 2001-08-10 | Matsushita Electric Ind Co Ltd | 半導体装置の製造装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019002058A1 (en) | 2019-01-03 |
| KR20200018627A (ko) | 2020-02-19 |
| CN110832623A (zh) | 2020-02-21 |
| JP2019009335A (ja) | 2019-01-17 |
| TWI749216B (zh) | 2021-12-11 |
| CN110832623B (zh) | 2024-01-19 |
| SG11201912232WA (en) | 2020-01-30 |
| TW201906004A (zh) | 2019-02-01 |
| JP6896522B2 (ja) | 2021-06-30 |
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| Date | Code | Title | Description |
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| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |